Optoelectronic Logic Gates Research Articles

High‐Performance Broad‐Spectrum UV Photodetectors with Uniform Response: Engineering β‐Ga2O3:Si/GaN:Si Heterojunctions via Thermal Oxidation for Optoelectronic Logic Gate and Multispectral Imaging

AbstractDeveloping high‐performance, broad‐spectrum ultraviolet photodetectors (PDs) with uniform response is crucial for optoelectronic applications like spectral analysis, optoelectronic logic gates, and multispectral imaging. This study constructs n‐n type β‐Ga2O3:Si/GaN:Si heterojunction PDs using thermal oxidation, combining the advantages of β‐Ga2O3:Si and GaN:Si for excellent broad‐spectrum response (UV‐A to UV‐C). A proposed channel model for GaN:Si oxidation includes hole formation, vortex structure development, channel formation, and grain growth, providing a basis for understanding β‐Ga2O3:Si/GaN:Si heterojunction formation. Uniform Si doping in the β‐Ga2O3 layer, achieved through thermal oxidation, reduces resistivity, enhances the collection of photogenerated carriers from the underlying GaN layer, and hence enhances broad‐spectrum response performance. The devices exhibit outstanding uniformity and sensitivity across the UV‐A to UV‐C range, with a peak responsivity of 2.44 × 104 A W−1 and a photocurrent‐to‐dark current ratio of 1.3 × 105. Applications include optoelectronic logic gates executing “OR gate” and “AND gate” logic operations with 254 and 365 nm UV light, and a single‐pixel multispectral imaging system producing high‐contrast, clear “CNU” images with 254, 295, and 365 nm UV light. This research advances the understanding of oxide heterojunction formation and offers a method for developing high‐performance, uniformly responsive broad‐spectrum UV photodetectors for optoelectronic applications.

From Light to Logic: Recent Advances in Optoelectronic Logic Gate

This review delves into the advancements in optoelectronic logic gate (OELG) devices, emphasizing their transformative potential in computational technology through the integration of optical and electronic components. OELGs present significant advantages over traditional electronic logic gates, including enhanced processing speed, bandwidth, and energy efficiency. The evolution of OELG architectures from single‐device, single‐logic systems to more sophisticated multidevice, multilogic, and reconfigurable OELGs is comprehensively explored. Key advancements include the development of materials and device structures enabling multifunctional logic operations and the incorporation of in‐memory functionalities, critical for applications in high‐performance computing and real‐time data processing. This review also addresses the challenges that need to be overcome, such as stability, durability, integration with existing semiconductor technologies, and efficiency. By summarizing current research and proposing future directions, this review aims to guide the ongoing development of next‐generation optoelectronic architectures, poised to redefine the landscape of optical computing, communication, and data processing.

Device Applications Enabled by Bandgap Engineering Through Quantum Dot Tuning: A Review.

Quantum dots (QDs) are becoming essential materials for future scientific and real-world applications, owing to their interesting and distinct optical and electrical properties compared to their bulk-state counterparts. The ability to tune the bandgap of QDs based on size and composition-a key characteristic-opens up new possibilities for enhancing the performance of various optoelectronic devices. These advances could extend to cutting-edge applications such as ultrawide-band or dual-band photodetectors (PDs), optoelectronic logic gates, neuromorphic devices, and security functions. This paper revisits the recent progress in QD-embedded optoelectronic applications, focusing on bandgap tunability. The current limitations and challenges in advancing and realizing QD-based optoelectronic devices are also discussed.

Dual-Electrically Configurable MoTe2/In2S3 Phototransistor toward Multifunctional Applications.

Photodetectors, essential for a wide range of optoelectronic applications in both military and civilian sectors, face challenges in balancing responsivity, detectivity, and response time due to their inherent unidirectional carrier transport mechanism. Multifunctional photodetectors that address these trade-offs are highly sought after for their potential to reduce costs, simplify system design, and surpass Moore's Law limitations. Herein, we present a multimodal phototransistor based on a 2D MoTe2/In2S3 heterostructure. Through dual electrical modulation employing bias voltage and gate voltage, we engineer the energy band to achieve switchable photoresponse mechanisms between photoconductive and photovoltaic modes. In photoconductive mode, the device exhibits a responsivity of 320 A/W and a specific detectivity of 1.2 × 1013 Jones. Meanwhile, in photovoltaic mode, it exhibits a light on/off ratio of 2 × 105 and response speed of 0.68/0.60 ms. These capabilities enable multifunctional applications such as high-resolution imaging across various wavelengths, a conceptual optoelectronic logic gate, and dual-channel optical communication. This work makes an advancement in the development of future multifunctional optoelectronic devices.

Ultra Low Power Consumption Optoelectronic Logic Operation of CuO/BaTiO3 Heterojunction Photodetector with Tunable Internal Electric Field Based on Poling Effect

AbstractThe study presents a novel self‐powered ultraviolet (UV) photodetector harnessing both polarization fields and photovoltaic effects, enabling the realization of ultra‐low power, reconfigurable optoelectronic logic gates. The approach is demonstrated on a CuO/BaTiO3 heterojunction photodetector. The behavior of the photodetector is augmented by the poling effect, aligning the internal electric field of the BaTiO3 through the application of a robust external electric field, thereby facilitating the implementation of optoelectronic logic gates. In the unpoled state, the “XOR” and “OR” logic gates operated at voltages of 750 and −500 µV, respectively. However, upon poling up state, the “XOR” logic gate exhibits reduced operation voltage, operating at 500 µV, while the “OR” logic gate implements clarity at −500 µV. In the unpoled state the “AND” logic gate does not operate; however, upon poling in the downward direction, it operated at −500 µV. The achievement demonstrates successful ultra‐low‐power logic operations, utilizing voltages in the hundreds of micron scale, under a 310 nm wavelength and a light intensity of 0.52 mW·cm−2. Furthermore, controllable polarization electric fields in BaTiO3 enable the operation of “AND” logic gate in the unpoled state, presenting a promising avenue for future research in optoelectronic logic gate design.

Optoelectronic Neuromorphic Logic Memory Device Based on Ga2O3/MoS2 Van der Waals Heterostructure with High Rectification and On/Off Ratios

AbstractIt is crucial to develop advanced optoelectronic devices that incorporate multiple functions, including sensing, storage, and computing, which is considered at the forefront of semiconductor optoelectronics to meet emerging functional diversification. In this study, by stacking the n‐type Ga2O3 with the n‐type MoS2 flakes, a Ga2O3/MoS2 heterostructure optoelectronic device with high rectification ratio of ≈105 and on/off ratio of ≈108 is fabricated, which achieves high detectivity of 1.34 × 109 Jones and high responsivity of 28.92 mA/W. More importantly, the Ga2O3/MoS2 heterostructure device shows potential ability to integrate sensing and memorizing, simultaneously, which can be used as artificial neuromorphic synaptic. The device exhibits excellent photo‐induced synaptic functions including short‐term plasticity, long‐term plasticity, and paired‐pulse facilitation, realizing the ability to couple light and electrical signals by Pavlovian associative learning. At last, the device also demonstrates the information processing ability to act as optoelectronic logic gate AND by synergistically regulating the light on/off states and gate voltage. The research introduces an innovative strategy for the development of next‐generation optoelectronic devices which are highly integrated with sensing, memory, and logic processing functions, demonstrating great application prospects in constructing an efficient artificial neuromorphic visual and logic systems.

Dimension-Controlled VO2 Film for Optoelectronic Logic Gates and Information Encryption.

As the fields of photonics and information technology develop, a lot of novel applications based on VO2 material, such as optoelectronic computing and information encryption, have been developed. While the performance of these devices was not only closely associated with the VO2 phase transition properties but also depended on their dimensional characteristics. In the current study, we conducted the dimension-controlled vanadium dioxide (VO2) film growth, resulting in the epitaxial 2-dimensional (2D) VO2 film and well-distributed 3-dimensional (3D) VO2 crystal film deposition, respectively. It was revealed that, unlike the 2D film, the pronounced localized surface plasmon resonance dominated the near-infrared spectrum across the phase transition for the 3D VO2 film due to the naturally formed meta-surface structure, which showed a transmittance valley in the infrared spectrum after metallization. Based on this distinct infrared spectrum feature in the 3D VO2 film, we proposed an optoelectronic logic gate controlled by the input voltage and the probing Vis/IR light. By detecting the transmittance states of the probing light with different wavelengths, we achieved multistate encoding functions and demonstrated the information encryption application. This new conception device also showed great potential for some other applications such as optoelectronic coupled computing, information encryption, and optical near-field sensing computing.

Negative Photoconductivity Transistors for Visuomorphic Computing.

Visuomorphic computing aims to simulate and potentially surpass the human retina by mimicking biological visual perception with an artificial retina. Despite significant progress, challenges persist in perceiving complex interactive environments. Negative photoconductivity transistors (NPTs) mimic synaptic behavior by achieving adjustable positive photoconductivity (PPC) and negative photoconductivity (NPC), simulating "excitation" and "inhibition" akin to sensory cell signals. In complex interactive environments, NPTs are desired for visuomorphic computing that can achieve a better sense of information, lower power consumption, and reduce hardware complexity. In this review, it is started by introducing the development process of NPTs, while placing a strong emphasis on the device structures, working mechanisms, and key performance parameters. The common material systems employed in NPTs based on their functions are then summarized. Moreover, it is proceeded to summarize the noteworthy applications of NPTs in optoelectronic devices, including advanced multibit nonvolatile memory, optoelectronic logic gates, optical encryption, and visual perception. Finally, the challenges and prospects that lie ahead in the ongoing development of NPTs are addressed, offering valuable insights into their applications in optoelectronics and a comprehensive understanding of their significance.

Printed On-Chip Perovskite Heterostructure Arrays for Optical Switchable Logic Gates.

The use of optoelectronic devices for high-speed and low-power data transmission and computing is considered in the next-generation logic circuits. Heterostructures, which can generate and transmit photoresponse signals dealing with different input lights, are highly desirable for optoelectronic logic gates. Here, the printed on-chip perovskite heterostructures are demonstrated to achieve optical-controlled "AND" and "OR" optoelectronic logic gates. Perovskite heterostructures are printed with a high degree of control over composition, site, and crystallization. Different regions of the printed perovskite heterostructures exhibit distinguishable photoresponse to varied wavelengths of input lights, which can be utilized to achieve optical-controlled logic functions. Correspondingly, parallel operations of the two logic gates ("AND" and "OR") by way of choosing the output electrodes under the single perovskite heterostructure. Benefiting from the uniform crystallization and strict alignment of the printed perovskite heterostructures, the integrated 3 × 3 pixels all exhibit 100% logic operation accuracy. Finally, optical-controlled logic gates responding to multiwavelength light can be printed on the predesigned microelectrodes as the on-chip integrated circuits. This printing strategy allows for integrating heterostructure-based optical and electronic devices from a unit-scale device to a system-scale device.

High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

AbstractHigh‐quality epitaxial graphene is prepared on semi‐insulated 4H‐SiC (0001) by ultra‐high vacuum thermal decomposition method and used in graphene/SiC/graphene ultraviolet‐visible dual‐band photodetectors. The dual‐band detector exhibits an extremely low dark current (5.2 × 10−14 A) and a peak responsivity of 1.17 A W−1 corresponding to an external quantum efficiency of 518%. A high detectivity of 3.14 × 1014 Jones is achieved under 280 nm light illumination at 30 V, while a high response speed is obtained with a rise time of 25.17 ns and a decay time of 540.10 ns. The detector shows a responsivity of 1.4 × 10−5 A W−1 and a detectivity of 6.5 × 109 Jones under 430 nm light illumination. The dual‐band detector equipped with SiC grating and asymmetrical graphene electrodes is demonstrated for high‐performance optoelectronic logic “AND” gate with high detectivity at 280 and 430 nm.

Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate.

Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.

Light induced photovoltaic and pyroelectric effects in ferroelectric BaTiO3 film based Schottky interface for self‐powered and flexible multi‐modal logic gates

AbstractOptoelectronic logic gates have emerged as one of the key candidates for the creation of next generation logic devices. However, current optoelectronic logic gates can provide only one or two logic gates, severely limiting their applications. Here we report a self‐powered and mechanically flexible device based on a BaTiO3 ferroelectric film to produce multi‐modal logic gates. By exploiting the photo‐induced photovoltaic and pyroelectric effects of a Schottky junction which is created between BaTiO3 and LaNiO3, the device is able to provide five different optoelectronic logic gates, which can be operated using input lasers of different wavelength (405 or 785 nm). The mode of operation of the logic gate can be switched by controlling the wavelength and intensity of the input laser, where the switching process is both lossless and reversible. A logic gate array was designed to conduct the five logic operations, with 100% accuracy, thereby providing application potential for the Internet of Things, big data, and secure solutions for data processing and transmission.image

Solution Processed Circuit Design for Flexible Opto Electronic Logic Gates

Solution Processed Circuit Design for Flexible Opto Electronic Logic Gates

All-in-One Optoelectronic Logic Gates Enabled by Bipolar Spectral Photoresponse of CdTe/SnSe Heterojunction.

Optoelectronic logic gate devices (OLGDs) have attracted significant attention in high-density information processors; however, multifunctional logic operation in a single device is technically challenging due to the unidirectional electrical transport. In this work, we deliberately design all-in-one OLGDs based on self-powered CdTe/SnSe heterojunction photodetectors. The SnSe nanorod (NR) array is grown on the sputtered CdTe film via a glancing-angle deposition technique to form a heterojunction device. At the interface, the photovoltaic (PV) effect in the CdTe/SnSe heterojunction and the photothermoelectric (PTE) effect from the SnSe NRs are combined together to induce the reversed photocurrent, leading to a unique bipolar spectral response. The competition between PV and PTE in different spectral ranges is thus employed to control the photocurrent polarity, and five basic logic gates of OR, AND, NAND, NOR, and NOT can be performed just with a single heterojunction. Our findings indicate the large potentials of the CdTe/SnSe heterojunctions as logic units in next-generation sensing-computing systems.

Reprogrammable Binary and Ternary Optoelectronic Logic Gates Composed of Nanostructured GaN Photoelectrodes with Bipolar Photoresponse Characteristics

AbstractThe elementary electronic‐logic‐gates, performing basic logic functions using electric signals as input, act as a building block of modern digital circuits. Intriguingly, the optoelectronic‐logic‐gates (OLGs), composed of optical devices, are emerging as a new logic platform which enables faster and large‐capacity data transmission and processing by using photons as input. However, the strict operation principle of classic optical devices, for example, the unidirectional photoresponse of the photodetector, restricts the functional enrichment of OLGs. Herein, reprogrammable OLGs in a photoelectrochemical (PEC)‐environment are reported by employing gallium‐nitride semiconductor p–n nanowires as photoelectrodes where bidirectional photocurrent is achieved, leading to the demonstration of various binary OLGs including “NOT”, “XOR”, and “OR”. Strikingly, thanks to the versatile tunability of PEC‐photoelectrodes, the logic function of these OLGs is switchable by simply adjusting programming inputs including light intensity, bias voltage, electrolyte condition, and the physicochemical properties of the nanowire surface. Most importantly, unique ternary OLGs, for example, ternary “OR” gates, can also be realized based on binary ones by just tuning their applied bias for higher logic complexity applications, without changing the device architecture. Such reprogrammable binary and ternary OLGs could provide a new avenue toward next‐generation logic circuits for fast computing and data‐processing in the future.

Tunable Bi‐directional Photoresponse in Hybrid PtSe2−x Thin Films Based on Precisely Controllable Selenization Engineering

AbstractBi‐directional photodetection with positive and negative photoconductance (PPC/NPC) plays a critical role in building next‐generation artificial neuromorphic systems, visual information processing and optoelectronic logic gates of the future. However, the typical device configuration based on heterostructures with strict working principles restricts the diversity of material selection. In this work, a novel strategy is proposed to fabricate bi‐directional photoresponse devices based on PtSe2−x films with precisely controllable selenization engineering. It is found that the PtSe2−x films are composed of Pt and PtSe2 components. The direction of the photocurrent can be reversibly modulated in a broadband range by tuning the ratio of PtSe2 in the film, which is ascribed to the synergistic mechanism of bolometric effect of Pt and photoconductive effect of PtSe2. The polarity switching wavelength from NPC to PPC can be further modulated through tuning the components of the film for specific demand. The tunable bi‐directional photoresponse enables the device to mimic the fundamental functions of artificial synapses all optically, such as aversion learning capability and logical functions, with high paired pulse facilitation index. This work potentially opens an opportunity for the development of advanced artificial neuromorphic systems and optoelectronic logic gates.

Work‐Function‐Tunable MXenes Electrodes to Optimize p‐CsCu2I3/n‐Ca2Nb3‐xTaxO10 Junction Photodetectors for Image Sensing and Logic Electronics

AbstractTunable work function has a high profile for the MXene‐based optoelectronic devices, and surface modification provides the huge potential to shift its Fermi level and modulate the work function. In this work, the window of MXene's work function is engineered from 4.55 to 5.25 eV by surface modification with LiF, Se, and polyethylenimine ethoxylated (PEIE). The vertical p‐CsCu2I3/n‐Ca2Nb3‐xTaxO10 junction photodetectors are constructed on the basis of the above surface‐modified MXenes, which changes the Schottky barrier between n‐Ca2Nb3‐xTaxO10 and the electrodes. In particular, the rectification effect is significantly enhanced by utilizing PEIE‐decorated MXene electrodes, resulting in a high rectification ratio of 16 136 and improved UV responsivity of 81.3 A W–1. Such high‐performance devices based on MXenes electrodes are compatible with the standard clean room fabrication process, realizing large‐scale flexible UV detectors that maintain 80% of the original current after 5000 times bending. Meanwhile, a photodetector array stimulated with UV of different wavelengths is constructed to reveal its potential for image sensing. Finally, functional “AND” and “OR” optoelectronic logic gates are developed for UV communication using Au/CsCu2I3/Ca2Nb3‐xTaxO10/MXene–PEIE photodetectors, enriching the application of MXene‐based optoelectronic devices. This work on tuning MXene work function via surface modification demonstrates that MXene is a promising candidate for future optoelectronics.

Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector

The explosive demand for a wide range of data processing has sparked interest towards a new logic gate platform as the existing electronic logic gates face limitations in accurate and fast computing. Accordingly, optoelectronic logic gates (OELGs) using photodiodes are of significant interest due to their broad bandwidth and fast data transmission, but complex configuration, power consumption, and low reliability issues are still inherent in these systems. Herein, we present a novel all-in-one OELG based on the bipolar spectral photoresponse characteristics of a self-powered perovskite photodetector (SPPD) having a back-to-back p+-i-n-p-p+ diode structure. Five representative logic gates (“AND”, “OR”, “NAND”, “NOR”, and “NOT”) are demonstrated with only a single SPPD via the photocurrent polarity control. For practical applications, we propose a universal OELG platform of integrated 8 × 8 SPPD pixels, demonstrating the 100% accuracy in five logic gate operations irrelevant to current variation between pixels.

Switchable Photoresponse Mechanisms Implemented in Single van der Waals Semiconductor/Metal Heterostructure.

van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been extensively studied for functional applications, and most of the reported devices work with sole mechanism. The emerging metallic 2D materials provide us new options for building functional vdW heterostructures via rational band engineering design. Here, we investigate the vdW semiconductor/metal heterostructure built with 2D semiconducting InSe and metallic 1T-phase NbTe2, whose electron affinity χInSe and work function ΦNbTe2 almost exactly align. Electrical characterization verifies exceptional diode-like rectification ratio of >103 for the InSe/NbTe2 heterostructure device. Further photocurrent mappings reveal the switchable photoresponse mechanisms of this heterostructure or, in other words, the alternative roles that metallic NbTe2 plays. Specifically, this heterostructure device works in a photovoltaic manner under reverse bias, whereas it turns to phototransistor with InSe channel and NbTe2 electrode under high forward bias. The switchable photoresponse mechanisms originate from the band alignment at the interface, where the band bending could be readily adjusted by the bias voltage. In addition, a conceptual optoelectronic logic gate is proposed based on the exclusive working mechanisms. Finally, the photodetection performance of this heterostructure is represented by an ultrahigh responsivity of ∼84 A/W to 532 nm laser. Our results demonstrate the valuable application of 2D metals in functional devices, as well as the potential of implementing photovoltaic device and phototransistor with single vdW heterostructure.

Defect Engineering of Out-of-Plane Charge Transport in van der Waals Heterostructures for Bi-Direction Photoresponse.

Defects are ubiquitous in two-dimensional (2D) transition-metal dichalcogenides (TMDs), generated by the initial growth- or the postprocessing. However, the defects may play negative roles in the photoelectronic properties of TMDs due to the reduction of in-plane transport of carriers. In this work, we demonstrate that the Se-vacancy defects in MoSe2 side of the van der Waal heterostructure is able to switch direction of out-of-plane charge transport. Photoresponse spectra showed defect density enable modified surface potential of MoSe2-x, leading to the barrier reverse between graphene and MoSe2-x and switches of the photoresponse from the negative to the positive. This unexpected property stemmed from appearance of midgap states by defects at heterostructure, as demonstrated by the density functional theory calculation and scanning tunneling microscope results. MoSe2-0.2/graphene heterostructure has a broadband response ranging from 450 to 1064 nm and exhibits comparable or higher positive responsivity (5.4 × 103 A/W to -15.3 × 103 A/W at 632.8 and 5.7 × 103 A/W to -1.2 × 103 A/W at 1064 nm) to the negative one of the pristine MoSe2/graphene. Based on defect-engineered heterostructures, we construct optoelectronic OR and AND logic devices with a broadband operation. Our work elucidates an alternative avenue to tailor the out-of-plane charge transport in TMD-based heterostructure through defects, and potentially invokes applicable utilization for 2D photodetectors and optoelectronic logic gates.