Optoelectronic Characteristics Research Articles

Triphenylamine-Based Y-Shaped Self-Assembled Monolayers for Efficient Tin Perovskite Solar Cells.

Triphenylamine-based Y-shaped organic sensitizers, specifically TPA-MN (1), TPA-CA (2), TPAT-MN (3), and TPAT-CA (4), are synthesized and utilized as p-type self-assembled monolayers (SAMs) for tin-based perovskite solar cells (TPSCs). These SAMs are developed using low-cost starting materials, primarily from triphenylamine (TPA) components. An extensive analysis is conducted to examine the crystalline, morphological, thermal, optical, electrochemical, and optoelectronic characteristics of SAMs 1-4, and the results are compared. A two-step method is employed to successfully develop tin perovskite layers on all four SAM surfaces. The resulting devices demonstrates PCE in the following order: TPAT-CA (8.1%) > TPAT-MN (6.1%) > TPA-MN (5.0%) > TPA-CA (4.2%). The TPAT-CA molecule, which contains a thiophene spacer, performed better than the other three SAMs in terms of rapid hole extraction rate, high hole mobility, and retarded charge recombination. Consequently, SAM TPAT-CA exhibited the highest device performance with excellent stability over time, retaining ≈90% from the beginning values after storage for 3000 h. The innovative Y-shaped SAMs describe in this study, characterized by their simple and efficient design, have the potential to contribute significantly to the advancement of perovskite photovoltaics, particularly in the development of cost-effective TPSC technology.

Optoelectronic performance prediction of HgCdTe homojunction photodetector in long wave infrared spectral region using traditional simulations and machine learning models.

This research explores the design of an infrared (IR) photodetector using mercury cadmium telluride (Hg1-xCdxTe). It proposes two- and three-dimensional homojunction models based on p+-Hg0.7783Cd0.2217Te/n--Hg0.7783Cd0.2217Te, focusing on applications in the long-wavelength infrared range. The photodetector's performance is analyzed using Silvaco ATLAS TCAD software and compared with analytical calculations based on drift-diffusion, tunneling, and Chu's approximation techniques. Optimized for operation at 10.6μm wavelength under liquid nitrogen temperature, the proposed photodetector demonstrates promising optoelectronic characteristics including the dark current density of 0.20mA/cm2, photocurrent density of 4.98A/cm2, and photocurrent density-to-dark current density ratio of 2.46 × 104, a 3-dB cut-off frequency of 104GHz, a rise time of 0.8 ps, quantum efficiency of 58.30%, peak photocurrent responsivity of 4.98A/W, specific detectivity of 3.96 × 1011cmHz1/2/W, and noise equivalent power of 2.52 × 10-16W/Hz1/2 indicating its potential for low-noise, high-frequency and fast-switching applications. The study also incorporates machine learning regression models to validate simulation results and provide a predictive framework for performance optimization, evaluating these models using various statistical metrics. This comprehensive approach demonstrates the synergy between advanced materials science and computational techniques in developing next-generation optoelectronic devices. By combining theoretical modeling, simulation, and machine learning, the research highlights the potential to accelerate progress in IR detection technology and enhance device performance and efficiency. This multidisciplinary methodology could serve as a model for future studies in optoelectronics, illustrating how advanced materials and computational methods can be utilized to enhance device capabilities.

Tunable electronic and optoelectronic characteristics of two-dimensional β-AsP monolayer: a first-principles study.

Two-dimensional (2D) semiconductors have attracted a great deal of interest from the electrical engineering community due to their intriguing electronic properties. In this study, we have systematically investigated the electronic and optoelectronic properties of β-AsP monolayers by first-principles calculations combined with strain engineering. The results show that the β-AsP monolayer has a suitable indirect bandgap and a strain-tunable electronic structure. On this basis, the designed two-electrode photodetector based on β-AsP monolayer exhibits a strong photoelectric response in the near-ultraviolet region, and the maximum photocurrent can reach 74a02 per phonon under the applied bias voltage of 1 V. In particular, the strain engineering not only improves the photoelectric performance of the β-AsP-based photodetector, but also adjusts its photodetection range. These findings suggest that β-AsP monolayers are ideal candidates for the development of near-ultraviolet photodetectors and optoelectronic devices.

Functional 1,2,4,5‐Tetrazine Systems for Photocatalysis and Sensing

s‐Tetrazines are aromatic heterocyclic systems with distinct structural and optoelectronic features, which have led to the design and development of tetrazine‐derived systems in various applications. In this review, we summarize all the research reported on the subject of the applicability of tetrazine derivatives for photocatalytic chemical transformation, hydrogen production, and coordination‐based analyte detection.

Versatile Organometallic Synthesis of 0D/2D Metal@Germanane Nanoarchitectonics for Electrochemical Energy Conversion Applications.

Hydrogen-terminated 2D-Germanane (2D-GeH), a germanium-based 2D material akin to graphene, is receiving enormous attention owing to its predicted optoelectronic characteristics. However, experimental research of 2D-GeH is still in an early stage, and therefore its real implementation for task-specific applications will depend on the correct development of suitable chemical functionalization methods. Herein, a general and straightforward organometallic (OM) approach is provided for the robust functionalization of 2D-GeH with different 0D noble metal nanoparticles (M-NPs), resulting in 0D/2D M@GeH nanoarchitectonics. As a proof-of-principle, 0D/2D Pt@GeH and Au@GeH nanoarchitectonics have been successfully synthesized, characterized, and explored as unconventional electrocatalysts for boosting energy conversion reactions. While the hydrogen evolution reaction activity was evaluated for Pt@GeH, the oxygen reduction reaction was interrogated for Au@GeH. Interestingly, the implanted catalytic features of M-NPs yielded to 0D/2D M@GeH nanoarchitectonics with enhanced energy conversion activity comparing to pristine 2D-GeH counterpart. This work proves the suitability of 2D-GeH as unconventional substrates to stabilize nobleM-NPs, and the versatility of the OM approach for the custom design of a new family of 0D/2D M@GeH nanoarchitectonics to expand the implementation of monoelemental 2D materials as promising electrocatalysts in energy conversion field and beyond.

Impact of PEDOT:PSS/Ti3C2Tx composite hole transport layer on the performance of perovskite light emitting diodes

The two-dimensional transition metal carbide MXenes, often designated by Ti3C2Tx, have garnered significant interest on account of their distinctive optoelectronic characteristics. In this paper, PEDOT:PSS/Ti3C2Tx composite hole transport layer (HTLs) was prepared by adding the MXenes material Ti3C2Tx into PEDOT:PSS, and quasi-two-dimensional perovskite light-emitting diodes (PeLEDs) were fabricated and investigated. While the addition concentration of Ti3C2Tx was 0.25 mg/mL, the optimal device shows the maximum luminance of 6250 cd/m2, and the current efficiency of 6.17 cd/A, which is 133 % and 112 % higher than the reference device without Ti3C2Tx, respectively. It is indicated that the additive incorporation of Ti3C2Tx in PEDOT:PSS can improve the efficiency of hole injection and conductivity of hole transport layer, and passivate the defects of perovskite film, thus enhancing the optoelectronic performance of PeLEDs. The findings of this study indicate that the PEDOT:PSS/Ti3C2Tx composite HTLs has considerable potential for application in PeLEDs.

SCAPS numerical modeling of CBTS/WO3 thin film solar cell

The quaternary compound Cu2BaSnS4 (CBTS) has emerged as a suitable and attractive light-harvesting material due to its promising optoelectronic features as well as nontoxic and low-cost constituent elements. Yet efficiency of CBTS-based solar cells did not reach the Shockley-Queisser limit. Here, what we believe to be a novel structure ITO/WO3/CBTS heterojunction solar cell is designed and modeled using a solar cell capacitance simulator in one-dimension (SCAPS-1D). In this work, a what we also believe to be a novel WO3 as a buffer layer is proposed for the first time for the efficiency enhancement of CBTS thin film solar cells. Numerical investigation of the performance of CBTS-based solar cells without and with cuprous oxide (Cu2O) back surface field (BSF) is explored. The impact of thickness, doping density, bulk, and interface defect density of an absorber, buffer and window layer, working temperature, shunt and series resistance, back contact work function, and back surface recombination velocity were analyzed and optimized without and with the BSF layer. In this work, the optimized solar cell achieved an efficiency of 18.8%, fill factor (FF) of 83.79%, short-circuit current density (JSC) of 15.99 mA/cm2, and open circuit voltage (VOC) of 1.4 V without Cu2O BSF layer at optimal CBTS absorber and WO3 buffer layer thickness of 2 µm and 0.04 µm respectively. Furthermore, the efficiency boosted to 21.12% with VOC of 1.43 V, JSC of 16.8 mA/cm2 and FF of 87.77% by inserting 0.1 µm Cu2O BSF layer. Therefore, these results will facilitate the fabrication of an efficient and low-cost CBTS-based solar cell with promising WO3 and Cu2O as buffer and BSF layer, respectively.

Exploring optoelectronic, thermodynamic and thermoelectric characteristics of ternary halide perovskites CaRbX3 (X = Cl or I) for photovoltaic and thermoelectric applications: a DFT insight

Exploring optoelectronic, thermodynamic and thermoelectric characteristics of ternary halide perovskites CaRbX3 (X = Cl or I) for photovoltaic and thermoelectric applications: a DFT insight

Comparative Analysis of Structural, Optical, and Electronic Properties of Nickel Oxide and Potassium‐Doped Nickel Oxide Nanocrystals

ABSTRACTMetal oxide semiconductors, known for their exceptional optical transparency, high carrier mobility, and stability, have found extensive use in emerging technologies such as optoelectronics and energy storage devices. Among all metal oxide semiconductors, nickel oxide (NiO) stands out as a highly favorable candidate due to its p‐type conductivity along with its substantial band gap (3.5–4 eV) for the broad range of applications, including gas sensors, high‐rate Lithium‐ion batteries, high‐performance supercapacitors, and photovoltaic devices. In light of these versatile applications, our current study presents a comprehensive comparative analysis of the structural and optoelectronic properties of NiO and potassium (K)‐doped NiO nanocrystals. The nanocrystals were synthesized using the co‐precipitation route and subsequently annealed at 500°C under ambient conditions. The effect of K doping on the structural and optoelectronic characteristics was systematically examined using various techniques, including x‐ray diffraction, UV–visible spectroscopy, Raman spectroscopy, and Hall effect measurements. To explore the structural characteristics, XRD measurements were performed, which confirm the FCC structure of nanocrystals. The optical property analysis suggested that the formation of the energy level can contribute to reduction of the band gap. A sharp peak at 397 cm−1 is associated with NiO bond in FTIR spectra which verifies the formation of nanocrystals. Moreover, the incorporation of K increases the intensity of the Raman peaks, which provides evidence for the higher degree of crystallinity in doped samples. These results of Raman scattering are in good agreement with XRD outcomes. In addition, the resistivity of NiO nanocrystals decreases monotonically with the increasing K concentration. The results of temperature‐dependent resistivity further demonstrate that electrons required more energy to jump from one polaron state to another in the case of x = 0.01 M and 0.03 M doped Ni0.5‐xKxO samples. The combination of a diminished band gap and enhanced conductivity makes these materials exceptionally promising for applications in optoelectronics and energy storage.

Improving Optoelectronic Properties of Acceptor–Donor–Acceptor‐Type Non‐Fullerene Acceptors Containing Extended Fused Ring Donor Units for Efficient Organic Semiconductors

Developing efficient small molecule‐based non‐fullerene acceptors (NFAs) has gained huge attention in fabricating high‐efficiency and stable organic solar cells (OSCs). Herein, we designed and characterized eight new NFAs for OSCs. To investigate the potential of these newly designed NFAs series (IBH1–IBH8) for OSCs, various advanced quantum chemical simulation approaches are used and compared with the synthetic reference molecule IBH–R. Due to the extended donor cores, the IBH1–IBH8 molecules possess strong intramolecular and intermolecular interactions, which helps improve the thin‐film surface crystallinity. Moreover, the designed IBH1–IBH8 molecules present improved UV–visible absorption, narrower bandgaps, lower excitation, and binding energies, and improved photovoltaic characteristics. Furthermore, the impact on the intrinsic properties such as transition density matrix, density of state, electrostatic potential, distribution of frontier molecular orbitals, and reorganizational energies of holes and electrons are estimated. Additionally, the charge‐transfer phenomenon by establishing a donor:acceptor blend (PTB7–Th:IBH4) is analyzed, their geometric analyses are studied, and a good charge‐shifting process is found at the donor:acceptor interface. With these results, we demonstrated the enhancements in the optoelectronic and photovoltaic characteristics of OSCs by performing a simple end‐capped modulation. Hence, these molecules are recommended for the development of efficient and cost‐effective OSCs.

First-principles investigation on the optoelectronic characteristics of multilayer borophene

First-principles investigation on the optoelectronic characteristics of multilayer borophene

Theoretical design of Z-scheme photocatalyst for water splitting with excellent catalytic performance: GeSe/PtS2 heterojunction

In the face of the urgent need for energy transition, Z-scheme heterojunctions are considered highly suitable candidates for future photocatalytic applications, owing to their exceptional optoelectronic characteristics and high catalytic efficiency. This paper systematically investigates the geometric structure, optoelectronic properties, and catalytic efficiency of the GeSe/PtS2 heterojunction through detailed first-principles calculations. The findings indicate that the band structure of the GeSe/PtS2 heterojunction presents a staggered Type-Ⅱ band alignment and exhibits an indirect band gap measuring 1.75 eV. Charge transfer analysis reveals that under the interplay of an intrinsic electric field directed from GeSe to PtS2 and the band bending occurring at the heterojunction interface, the GeSe/PtS2 heterojunction conforms to the obvious Z-scheme electron transfer mechanism characteristics. This facilitates the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) to proceed smoothly on opposite sides of the heterojunction. Across the pH range of 0 to 14, the heterojunction's band edge positions successfully span the redox potentials of water, and can still meet the hydrolysis potential requirements under strain. In addition, the GeSe/PtS2 heterojunction not only effectively compensates for the poor absorption of PtS2 monolayer to visible light, but also achieves a wider visible light absorption range through the strain-induced redshift in the spectrum. At the same time, the solar to hydrogen (STH) efficiency of up to 15.56% further underscores the substantial catalytic potential of the GeSe/PtS2 heterojunction, offering promising design strategies for a technological revolution in the field of photocatalysis.

Investigation of the impact of internal acceptor and π-linker in 2, 5-di(2-thienyl)pyrrole based organic dye photosensitizer for DSSCs

The effect of π-linkers and internal acceptor group on the optoelectronic characteristics of D-π-A and D-A′-π-A dyes for dye-sensitized solar cells (DSSC) were examined. The DFT was used for estimating geometries and charge transport parameters, and the TD-DFT for calculating electronic excitations of these dyes. HOMO, LUMO, and HOMO-LUMO energy gap were also calculated for appreciating the suitable electron transfer, dye regeneration, and charge injection. For achieving the improved performance of dyes in DSSC, injection driving force (ΔGinj), short circuit current (JSC), the open circuit voltage (VOC), light harvesting efficiency (LHE), dye regeneration energy (ΔGreg), and Power conversion efficiency were also determined. For suitable Power conversion efficiency of the DSSCs, electron affinity (EA), hole and electron extraction potential, Ionization potential (IP), Total density of states, and Electrostatic potential (ESP) were also calculated. The result shows that the internal acceptor and π-linkers affect the photovoltaic parameters and a small variations in the dye architecture increase the efficiency of DSSCs. The dyes containing diphenyl π-linkers showed maximum power conversion efficiency for solar cell.

Principles-based investigation of lithium-based halide perovskite X2LiAlH6 (X=K, Mn) for hydrogen storage, optoelectronic, and radiation shielding applications

Scientists devote their time and energy to studying and developing hydrogen storage devices to address the energy crisis and climate change. Because of this, investigations are conducted to reveal the optoelectronic, structural, bader charge, electronic charge density, and hydrogen storage properties of X2LiAlH6 (X = K, Mn) within the framework of density functional theory, and calculations of the structural characteristics were carried out utilizing local and nonlocal, and hybrid functionals. An additional onsite Coulomb parameter (GGA + U), which includes the Hubbard parameter, was used to apply the potential. Calculations based on the Kramer-Kroning principle were used to determine the dielectric function, refractive index, extinction coefficient, and energy loss function. The results indicate that K2LiAlH6 and Mn2LiAlH6 are highly suitable for hydrogen storage applications. The gravimetric ratios of hydrogen storage capacities for both investigated materials are 5.2 wt %, and 7.5 wt %, respectively. The interaction of the Mn-d, Li-s, K-s, and H-s/p orbitals was the cause of hybridization, according to the optoelectronic characteristics. Compound stability is indicated by the negative computed formation energy of the materials under investigation. The electronic charge density analysis showed a mixed-bond semiconductor with low ionicity and high covalence. In addition, the radiation shielding properties of Mn2LiAlH6 and K2LiAlH6 were investigated using Phy-X software, showing promising results in linear attenuation, half-value layer, and mean free path, particularly for Mn2LiAlH6 due to its higher atomic number. This groundbreaking study represents a pioneering computational exploration of X2LiAlH6, offering promising advancements for future research in hydrogen storage applications.

Surface Defects Control Bulk Carrier Densities in Polycrystalline Pb-Halide Perovskites.

The (opto)electronic behavior of semiconductors depends on their (quasi-)free electronic carrier densities. These are regulated by semiconductor doping, i.e., controlled "electronic contamination". For metal halide perovskites (HaPs), the functional materials in several device types, which already challenge some of the understanding of semiconductor properties, this study shows that doping type, density and properties derived from these, are to a first approximation controlled via their surfaces. This effect, relevant to all semiconductors, and already found for some, is very evident for lead (Pb)-HaPs because of their intrinsically low electrically active bulk and surface defect densities. Volume carrier densities for most polycrystalline Pb-HaP films (<1µm grain diameter) are below those resulting from even < 0.1% of surface sites being electrically active defects. This implies and is consistent with interfacial defects controlling HaP devices in multi-layered structures with most of the action at the two HaP interfaces. Surface and interface passivation effects on bulk electrical properties are relevant to all semiconductors and are crucial for developing those used today. However, because bulk dopant introduction in HaPs at controlled ppm levels for electronic-relevant carrier densities is so difficult, passivation effects are vastly more critical and dominate, to first approximation, their optoelectronic characteristics in devices.

Influence of Ionic Liquids on the Functionality of Optoelectronic Devices Employing CsPbBr3 Single Crystals

Regulating the nucleation temperature and growth rates during inverse temperature crystallization (ITC) is vital for obtaining high-quality perovskite single crystals via this technique. Precise control over these parameters enables growing crystals optimized for various optoelectronic devices. In this study, it is demonstrated that incorporating a 1-butyl-3-methylimidazolium bromide (BMIB) ionic liquid into the precursor solution of cesium lead bromide (CsPbBr3) brings about a dual enhancement effect. This includes a reduction in nucleation temperature from 85 °C to 65 °C and a significant improvement in both optoelectronic characteristics and crystal properties. The CsPbBr3 single crystals grown using ITC with BMIB added (method (2)) demonstrate improved chemical and physical properties (crystallinity, lattice strain, nonradioactive recombination, and trap density) compared to CsPbBr3 single crystals produced through conventional 85 °C ITC alone (method (1)). The exceptional quality of CsPbBr3 single crystals produced with the inclusion of BMIB allowed for the development of a highly responsive optoelectronic device, demonstrating heightened sensitivity to green light. The findings of this investigation reveal that the growth of perovskite single crystals assisted by ionic liquid exerts a substantial impact on the characteristics of the crystals. This influence proves advantageous for the development of optoelectronic devices based on single crystals.

Strain effects on electronic structure and optics of al-Doped monolayer GaS

This comprehensive study utilises rigorous first-principles calculations to meticulously investigate the influence of uniaxial tensile strain on the electronic configuration and optical behaviours of aluminium-doped gallium sulphide. The study highlights the modulation of electrical properties and optical responses in Al-doped monolayer GaS through the application of tensile strain. Notably, with increasing tensile strain, the bandgap value of the pristine GaS exhibits a pronounced decline, whereas the Al-doped variant maintains a more stable bandgap. A deeper exploration of the state density reveals the emergence of novel electronic states and energy levels in both the pristine and Al-doped monolayer GaS systems as tensile strain is applied. Crucially, the stabilising effect of the doped Al atoms minimises variations in the state density profiles of the Al-doped monolayer GaS systems, in contrast to their pristine counterparts. This result implies that fine control of the electrical structure and optical characteristics of Al-doped monolayer GaS may be achieved by the application of uniaxial tensile strain. The optoelectronic characteristics of GaS and its doped systems are explained in detail by these discoveries, which also offer a crucial theoretical foundation and direction for the use of these materials in optoelectronic devices.

Feasibility of Exceeding 20% Efficiency for Kesterite/c-Silicon Tandem Solar Cells Using an Alternative Buffer Layer: Optical and Electrical Analysis.

Tandem solar cells have the potential to be more efficient than the Shockley-Queisser limit imposed on single junction cells. In this study, optical and electrical modeling based on experimental data were used to investigate the possibility of boosting the performance of kesterite/c-Si tandem solar cells by inserting an alternative nontoxic TiO2 buffer layer into the kesterite top subcell. First, with SCAPS-1D simulation, we determined the data reported for the best kesterite (CZTS (Eg = 1.5 eV)) device in the experiments to be used as a simulation baseline. After obtaining metric parameters close to those reported, the influence on the optoelectronic characteristics of replacing CdS with a TiO2 buffer layer was studied and analyzed. Different top subcell absorbers (CZTS0.8Se0.2 (Eg = 1.4 eV), CZTS (Eg = 1.5 eV), CZTS (Eg = 1.6 eV), and CZT0.6Ge0.4S (Eg = 1.7 eV)) with different thicknesses were investigated under AM1.5 illumination. Then, to achieve current matching conditions, the c-Si bottom subcell, with an efficiency at the level of commercially available subcells (19%), was simulated using various top subcells transmitting light calculated using the transfer matrix method (TMM) for optical modeling. Adding TiO2 significantly enhanced the electrical and optical performance of the kesterite top subcell due to the decrease in parasitic light absorption and heterojunction interface recombination. The best tandem device with a TiO2 buffer layer for the top subcell with an optimum bandgap equal to 1.7 eV (CZT0.6Ge0.4S4) and a thickness of 0.8 µm achieved an efficiency of approximately 20%. These findings revealed that using a TiO2 buffer layer is a promising way to improve the performance of kesterite/Si tandem solar cells in the future. However, important optical and electrical breakthroughs are needed to make kesterite materials viable for tandem applications.

Rapid Thermal-Driven Crystal Growth and Defect Suppression in Antimony Selenide Thin Film for Efficient Solar Cells.

Antimony selenide (Sb2Se3) has demonstrated considerable potential and advancement as a light-absorbing material for thin-film solar cells owing to its exceptional optoelectronic characteristics. However, challenges persist in the crystal growth, particularly regarding the nucleation mechanism during pre-selenization process for Sb2Se3. The defects originating from this process significantly impact the quality of the absorber layer, leading to the degradation in the power conversion efficiency (PCE) of the device. Herein, the evolution of pre-selenization using rapid thermal processing (RTP) on the crystallization quality of Sb2Se3 film is systematically investigated. By optimizing the initial nucleation process during pre-selenization, resulting in a reduction of grain boundaries and nucleation centers, the Sb2Se3 thin films demonstrate enhanced crystallinity and pinholes-free morphology. It is found that the improved quality of the grain interior and interfaces of the Sb2Se3 absorber can mitigate intrinsic defects within the bulk layer, and passivate interfacial defect recombination. As a result, the short circuit current density (JSC) is elevated to 28.97mA cm-2, and a competitive efficiency of 9.03% is achieved in Sb2Se3 device. This study provides comprehensive insight into the process of crystal growth and the mechanism for defect suppression, which holds guiding significance for advancing photovoltaic performance.

Exploring the Impact of Ni Doping in Tuning the Bandgap, Electronic, Optoelectronic and Photocatalytic Properties of ZnFe2O4

AbstractThe exploration of semiconductor nanostructures utilizing mixed metal materials is an emerging area of study across fields including field‐effect transistors, chemical sensors, photodetectors, photocatalysts, and many more. In this study, Schottky diodes based on ZnFe2O4 (ZFO) were constructed with an aim to tune their electronic and optoelectronic characteristics. Here, Ni doping facilitated the tuning of electronic properties, leading to a significant increase in the rectification ratio from 238 to 1172, along with a reduction in the potential barrier height from 0.67 V to 0.65 V. This is attributed to Ni's role as a charge carrier in ZFO, enhancing carrier concentration, confirmed by Mott‐Schottky analysis. The 5 mol % Ni‐doped ZFO also exhibited remarkable light sensitivity, with its rectification ratio surging to 1795 under illumination, four times that of the undoped version. Additionally, its photo‐sensitivity soared to 42.46 %, nearly quadrupling the undoped device's performance, and its power gain impressively climbed to 38.4 %, which is over twelvefold the undoped sample's output. Furthermore, the diode responds strongly to optical illumination, making this structure suitable for use as a photodiode or photosensor. Apart from that by employing a doping strategy, we achieved 64.61 % degradation of methylene blue dye under visible light in 120 minutes, compared to 36.85 % for the undoped sample. These indicate that hydrothermally synthesized Ni‐doped ZFO is promising for visible light‐driven multifunctional applications.