Optoelectronic Applications Research Articles

Proposal of a Biobased and Biodegradable Polymer as a Hot Embossing Substrate for Holographic Security Marks Fabrication

ABSTRACTThe alarming increase in counterfeiting has determined a more intensive application of authentication solutions such as holographic security marks. Polycarbonate or polymethyl methacrylate currently used in the hot embossing process to produce security marks are discarded as non‐biodegradable waste after utilization. For the first time, poly(lactic acid) (PLA) was studied here as a hot‐embossing substrate to imprint a micro‐relief containing diffractive gratings, as a stage in the fabrication of holographic security marks. Four PLA grades, which differ by crystallinity and mechanical properties, were used to define the suitability of PLA for hot embossing. The 3D topography of embossed micro‐relief in PLA plates was investigated by quantitative phase imaging, scanning electron microscopy, and atomic force microscopy (AFM). The analyses showed that a high crystallinity and a low d‐lactide content of PLA render the hot‐embossing process more difficult and decrease the quality of the imprinted micro‐relief. The average height of the micro‐relief and the difference in height values, which were determined by AFM, allowed the ranking of the PLA grades according to the quality of the diffracted image. The possibility of recycling the embossed PLA substrate several times before composting was also demonstrated in this work. The variation of the mechanical properties, thermal stability, melting, and crystallization behaviors after each recycling cycle has shown that PLA can be reprocessed six times without significant damage to the properties. This study demonstrated that PLA can replace petroleum‐based polymers in the fabrication of holographic security marks and its suitability for a plethora of optoelectronics applications.

High-Performance Sol-Gel-Derived CNT-ZnO Nanocomposite-Based Photodetectors with Controlled Surface Wrinkles.

We investigate the effects of incorporating single-walled carbon nanotubes (CNTs) into sol-gel-derived ZnO thin films to enhance their optoelectronic properties for photodetector applications. ZnO thin films were fabricated on c-plane sapphire substrates with varying CNT concentrations ranging from 0 to 2.0 wt%. Characterization techniques, including high-resolution X-ray diffraction, photoluminescence, and atomic force microscopy, demonstrated the preferential growth of the ZnO (002) facet and improved optical properties with the increase in the CNT content. Electrical measurements revealed that the optimal CNT concentration of 1.5 wt% resulted in a significant increase in the dark current (from 0.34 mA to 1.7 mA) and peak photocurrent (502.9 µA), along with enhanced photoresponsivity. The rising and falling times of the photocurrent were notably reduced at this concentration, indicating improved charge dynamics due to the formation of a p-CNT/n-ZnO heterojunction. The findings suggest that the incorporation of CNTs not only modifies the structural and optical characteristics of ZnO thin films but also significantly enhances their electrical performance, positioning CNT-ZnO composites as promising candidates for advanced photodetector technologies in optoelectronic applications.

Multicomponent Diversity-Oriented Access to Boronic-Acid-Derived Pyrrolide Salicyl-Hydrazone Fluorophores with Strong Solid-State Emission.

Fluorescent molecular platforms are highly sought after for their applications in biology and optoelectronics but face challenges with solid-state emission quenching. To address this, bulky substituents or aggregation-induced emission luminogens to restrict intramolecular motion are used to enhance the brightness. Here, we have successfully engineered a novel class of boron complexed pyrrolide salicyl-hydrazone fluorophores named BPSHY. These dyes were synthesized through a diversity-oriented condensation of pyrrole and salicylaldehyde derivatives combined with various aromatic boronic acids. The resulting 3D structures, owing to bulky boron axially substituted aryl groups, impart excellent solubility in a variety of solvents. Significantly, the BPSHY dyes exhibit strong absorption in the visible region and remarkably large Stokes shifts. Crucially, they demonstrate intense emission in aqueous solutions due to aggregation-induced emission effects. In solid-states, these dyes achieve high quantum yields, reaching up to 58%. Further expanding their utility, we developed two new BPSHY probes: one incorporating morpholine and another containing triphenylphosphine salt. Both of them are found to specifically label subcellular organelles such as lysosomes and mitochondria within live cells. Notably, these probes demonstrate exceptional staining efficacy and two-photon fluorescence feature. This highlights the considerable promise of BPSHY fluorophores for monitoring and visualizing the dynamic transformations of organelles.

Advances in Room Temperature of Indium Aluminum Nitride InAlN Deposition via Direct Current (DC) Co-Sputtering for Solar Energy Applications

This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the aluminum target. The results show that increasing the target power favors the formation of aluminum nitride (AlN), which modifies the chemical composition of the material. The layers obtained present smooth surfaces with a roughness of less than 3 nm, which is beneficial for applications requiring interfaces with low defect density. Regarding the optical properties, it is observed that the optical bandgap varies between 1.8 eV and 2.0 eV, increasing with the target power. Hall effect measurements indicate a decrease in the free carrier concentration and an increase in the resistivity with increasing power. This approach allows for the synthesis of InAlN with properties suitable for optoelectronic applications, solar cells, photocatalysis, and photoelectrocatalysis at low cost.

Device Applications Enabled by Bandgap Engineering Through Quantum Dot Tuning: A Review.

Quantum dots (QDs) are becoming essential materials for future scientific and real-world applications, owing to their interesting and distinct optical and electrical properties compared to their bulk-state counterparts. The ability to tune the bandgap of QDs based on size and composition-a key characteristic-opens up new possibilities for enhancing the performance of various optoelectronic devices. These advances could extend to cutting-edge applications such as ultrawide-band or dual-band photodetectors (PDs), optoelectronic logic gates, neuromorphic devices, and security functions. This paper revisits the recent progress in QD-embedded optoelectronic applications, focusing on bandgap tunability. The current limitations and challenges in advancing and realizing QD-based optoelectronic devices are also discussed.

Toward Ultrathin: Advances in Solution-Processed Organic Semiconductor Transistors.

In recent years, organic semiconductor (OSC) ultrathin films and their solution-processed organic field-effect transistors (OFETs) have garnered attention for their high flexibility, light weight, solution processability, and tunable optoelectronic properties. These features make them promising candidates for next-generation optoelectronic applications. An ultrathin film typically refers to a film thickness of less than 10 nm, i.e., several molecular layers, which poses challenges for OSC materials and solution-processed methods. In this paper, first we introduce the carrier-transport regulation mechanism under ultrathin limits. Second, we summarize various solution-processed techniques for OSC ultrathin films and elucidate advances in their OFETs performance, such as enhanced or maintained mobilities, improved switching ratios, reduced threshold voltages, and minimized contact resistance. The relationship between the ultrathin-film thickness, microstructure of various OSCs (small molecules and polymers), and device performance is discussed. Third, we explore the recent application of OSC ultrathin-film-based OFETs, such as gas sensors, biosensors, photodetectors, and ferroelectric OFETs (Fe-OFETs). Finally, the conclusion is drawn, and the challenges and prospects of ultrathin OSC transistors are presented. Nowadays, research on ultrathin films is still in its early stages; further experience in precise film deposition control is crucial to advancing research and broadening the scope of applications for OSC ultrathin devices.

Optimization of Ultrafast Singlet Fission in One-Dimensional Rings Towards Unit Efficiency

Singlet fission (SF) is an electronic transition that in the last decade has been under the spotlight for its applications in optoelectronics, from photovoltaics to spintronics. Despite considerable experimental and theoretical advancements, optimizing SF in materials like multichromophoric systems and molecular crystals remains a challenge, due to the complexity of its analysis beyond perturbative methods. Here, we tackle the case of one-dimensional rings, aiming to promote singlet fission and prevent its backreaction. We study ultrafast SF nonperturbatively, by numerically solving a spin-boson model, via exact propagation and tensor network methods. By optimizing over a parameter space relevant to organic molecular materials, we identify two classes of solutions that can take SF efficiency beyond 85% in the nondissipative (coherent) regime, and to 99% when exciton-phonon interactions can be tuned. After discussing the experimental feasibility of the optimized solutions, we conclude by proposing that this approach can be extended to a wider class of optoelectronic optimization problems. Published by the American Physical Society 2024

Exploring Electronic and Conformational Attributes of an Organic Donor‐Bridge‐Acceptor Molecular System

AbstractThis research explores the electronic properties and conformational dynamics of the ZnP‐COPV‐ (Zinc Porphyrin ‐ Carbon bridged Oligo Phenylenevinylene ‐ Fullerene) organic semiconductor via specialized Density Functional Theory (DFT) and Molecular Dynamics (MD) computational techniques. First, through DFT calculations, essential HOMO (Highest Occupied Molecular Orbital), LUMO (Lowest Unoccupied Molecular Orbital), and Molecular Electrostatic Potential (MEP) electronic attributes are meticulously dissected providing insights into the intricate charge transfer processes between the constituent donor‐acceptor moieties. Furthermore, MD simulations are employed to unveil the molecular system's multifaceted conformational flexibility and stability. The Root‐mean‐squared deviation (RMSD), end‐to‐end distance, and torsional angles quantitative analysis of conformational attributes support the carbon‐bridged oligo‐phenylenevinylene (COPV) molecular wire's ‐skeleton planar and rigid conformation. This minimal end‐to‐end distance variation (within Å) compared to the initially extended structure and the constrained torsional motion (within for ZnP‐COPV and for COPV‐) after thermalization showcases COPV's ability to maintain structural rigidity over time, aligning with the concept of effective ‐conjugation. Finally, through the lens of time dependent (TD)‐DFT, the dynamic evolution of the HOMO–LUMO energy gap, TD‐DFT excitation energies and oscillator strengths are explored as the molecular structure transforms over time. The observed energy gap variation underscores the molecule's adaptability in the face of structural modifications, hinting at an intriguing connection between structural stability and enhanced electronic properties. The research provides a comprehensive understanding of the intricate interplay between conformational dynamics and electronic attributes in organic semiconductors, providing quantitative insights crucial for designing stable, high‐performance materials for cutting‐edge optoelectronic applications and helping advance the collective understanding of sustainable energy conversion.

Structure, Optical Properties and Magnetocaloric Effects in Gd3Fe5O12 Garnet Synthesized by Solid State Method

In this work, gadolinium iron garnet (Gd3Fe5O12) was synthesized using the solid-state ceramic method. The structural analysis, confirmed through Rietveld refinement, indicated the formation of a single-phase garnet structure. Scanning electron microscopy studies revealed uniform grain size and homogeneity in the sintered material, while UV-vis absorption studies showed a peak at 300 nm, indicating strong ultraviolet interaction and an optical band gap of 3.64 eV, suggesting optoelectronic potential. The fluorescence emission spectrum shows a band at 435 nm, while the excitation spectrum exhibits bands at 275 and 360 nm. The magnetic measurements demonstrated Gd ion ordering at low temperatures, with a compensation temperature around 290 K. Arrott plots confirmed the second-order magnetic phase transition. Importantly, Gd3Fe5O12 exhibited both normal and inverse magnetocaloric effects, with a maximum magnetic entropy change of 1.05 J kg–1 K–1 at 230 K under 9 T magnetic field. These properties indicate Gd3Fe5O12 material as a promising candidate for magnetic refrigeration and optoelectronic applications.

Interlayer excitons diffusion and transport in van der Waals heterostructures

Abstract The assembly of monolayer transition metal dichalcogenides (TMDs) in Van der Waals heterostructures yields the formation of spatially separated interlayer excitons (IXs) with large binding energies, long lifetimes, permanent dipole moments and valley-contrasting physics, providing a compelling platform for investigating and engineering spatiotemporal IX propagation with highly tunable dynamics. Further twisting the stacked TMD monolayers can create long-term periodic moiré patterns with spatially modified band structures and varying moiré potentials, featuring tailored traps that can induce strong correlations with density-dependent phase transitions to modulate the exciton transport. The rich exciton landscapes in TMD heterostructures, combined with advancements in valleytronics and twistronics, hold great promise for exploring exciton-integrated circuits base on manipulation of exciton diffusion and transport. In this Review, we provide a comprehensive overview of recent progress in understanding IXs and moiré excitons, with a specific focus on emerging exciton diffusion and transport in TMD heterostructures. We put emphasis on spatial manipulation of exciton flux through various methods, encompassing exciton density, dielectric environment, electric field and structure engineering, for precise control. This ability to manipulate exciton diffusion opens up new possibilities for interconverting optical communication and signal processing, paving the way for exciting applications in high-performance optoelectronics, such as excitonic devices, valleytronic transistors and photodetectors. We finally conclude this Review by outlining perspectives and challenges in harnessing IX currents for next-generation optoelectronic applications.

Modification of opto‐electrical behavior of polyvinyl chloride by infusion of SrTiO3 nanofiller synthesized via green route

AbstractEnhancing the opto‐electrical properties of polymer is crucial for optoelectronic devices. This study emphasis the synthesis of strontium titanate (SrTiO3) nanoparticles using a green sol–gel method and incorporates them into polyvinyl chloride (PVC) to create nanocomposite films via solution casting. The structural, optical, thermal, and electrical properties of PVC with SrTiO3 at concentrations of 1, 3, and 5 wt.% were examined. Better crystallinity was obtained with filler incorporation. Fourier transform infrared shows the physical interaction between nanofiller and the matrix. SEM results suggested that SrTiO3 nanofiller are well distributed in PVC surface. UV–Vis spectroscopy was used to study optical behavior of the nanocomposites. Optical bandgap energy decreased from 3.2 to 2.5 eV with increased concentration of SrTiO3 in PVC matrix. Photoluminescence results show the reduction of electron hole recombination rate. The integration of SrTiO3 nanofiller into the PVC matrix improved the thermal stability, dielectric constant, and the overall performance of the prepared nanocomposite films, making them suitable for high‐temperature optoelectronic and energy storage applications. The green synthesis of SrTiO3 nanofiller also ensures the environmental benefits, high purity, and homogeneity, leading to consistent enhancements in the PVC/SrTiO3 composites. These improvements highlight their potential for advanced optoelectronic devices requiring efficient and durable materials.

Unveiling the influence of dopants on structural, defect chemistry, morphological and optical characteristics of NiO nanostructures

Abstract In this paper, undoped and doped (Fe, Co and Fe-Co) nickel oxide (NiO) nanostructures have been synthesized using co-precipitation method. Prepared samples were characterized for the structural, compositional, morphological and optical properties using x-ray diffraction, scanning electron microscopy (SEM), Energy dispersive spectrocopy (EDS), UV-visible spectroscopy and photoluminescence spectroscopy. Structural analysis confirmed the single cubic phase formation of undoped and doped samples. Defect chemistry showed that Fe-Co co-doped NiO possesses a lower density of defects than other samples. SEM results revealed the agglomeration of particles. EDS results confirmed the presence of Ni, O, Fe and Co in the respective undoped and doped samples. Optical analysis revealed the band edge shifts with the incorporation of dopants in the NiO crystal lattice confirmed the variation of band gap energy. Emission peaks were observed in the UV and visible regions. The Incorporation of dopants in the crystal lattice causes variation of emission centers. Surface oxygen vacancies and imperfections significantly impact the emission characteristics of NiO. Variable spectral response of NiO with dopant incorporation has potential for optoelectronic applications.

Application and Research Progress of Perovskite in the Field of Optoelectronic Materials

Perovskite refers to a class of materials with the formula of ABO3. These oxides were first discovered in calcium titanate compounds. Perovskite materials have attracted widespread attention in the field of contemporary photovoltaic research due to their excellent photovoltaic properties, heralding their potential as protagonists of a new generation of photovoltaic materials. Nevertheless, the stability of perovskite materials needs to be enhanced. In addition, reducing the toxicity of the materials is a key challenge in advancing their commercialization. Currently, the rapid development of perovskite in the field of optoelectronics and its unique combination of properties have laid a solid foundation for its position as a mainstream optoelectronic material of the future. Therefore, this work focuses on the properties and applications of perovskite optoelectronics. With deeper scientific research and technological innovation, perovskites have the potential to overcome existing limitations and move towards large-scale commercial production. In the future, the further application of perovskite optoelectronic materials would have far-reaching implications for the global energy transition and environmental protection.

Pressure induced tunable physical properties of cubic KHgF3 fluoro-perovskite: A first principle study

The structural, electronic, optical, mechanical, and thermodynamic properties of KHgF3 perovskite under various hydrostatic pressures are examined in this study in the frameworkof Density Functional Theory (DFT) with the Generalized Gradient Approximation (GGA) Perdew-Burke-Ernzerhof (PBE) exchange–correlation function. Tunable physical properties have been observed in KHgF3 as pressure is incrementally applied. The investigated compound displays mechanical instability beyond the pressure range of 0 to –10 GPa, as confirmed by the elastic constant analysis. Under ambient pressure, the lattice constants of KHgF3 closely align with theoretically calculated values, affirming the accuracy of this investigation. In addition, the bandgap of KHgF3 narrows with increasing pressure, facilitating easier electron transition from the valence band to the conduction band. The study reveals that when subjected to different hydrostatic pressures, fluctuations are observed in the peaks of the conductivity spectrum, loss spectrum, and absorption spectrum, particularly shifting towards higher photon energies, as analyzed through the optical properties. Moreover, KHgF3 exhibits ductile behavior at 0 GPa pressure, and this ductility rises with pressure. Thermodynamic analysis reveals a decrease in Debye temperature with increasing pressure, while the melting temperature rises correspondingly. The findings of this investigation also imply that KHgF3 can be a good candidate for optoelectronic device application under different hydrostatic pressures.

Leveraging Phenazine‐Based Ligands for Optimized Perovskite Optoelectronic Performance Through Chelation and Redox Engineering

AbstractPerovskite nanocrystals (PNCs) hold immense potential for optoelectronic and photovoltaic applications. However, their performance is hindered by surface defects that promote non‐radiative recombination and reduce stability. Surface engineering, particularly through defect passivation, is crucial for achieving high‐performing perovskite solar cells. Chelation has been shown to significantly improve the efficiency and stability of perovskite solar cells. In this study, a novel chelation strategy using 1,10‐Phenanthroline (Phen) is presented as a bidentate chelating ligand to effectively target and passivate these detrimental surface defects. By strategically designing a Phenanthroline derivative, dipyrido[3,2‐a:2′,3′‐c]phenazin‐11‐amine (Phen‐derivative) with optimized redox potentials, dual functionality: efficient defect passivation and hole transport is achieved. X‐ray photoelectron spectroscopy (XPS) confirms the superior binding capability of the Phen‐derivative due to chelation. This strong interaction facilitates efficient and ultrafast charge transfer from PNCs and the formation of a long‐lived charge‐separated state, as evidenced by sustained bleaching in transient absorption spectra. A metal‐dipyrido[3,2‐a:2′,3′‐c]phenazin‐11‐amine complex (Ir‐complex) derived from dipyrido[3,2‐a:2′,3′‐c]phenazin‐11‐amine, but lacking a chelation site, hinders desired hole transfer despite similar charge transfer energetics. This work emphasizes the critical role of chelation‐mediated interfacial interactions and energy alignment in designing effective charge shuttle molecules and unlocking the potential of lead‐chelating hole transporters for next‐generation light‐harvesting technologies.

Syntheses and Properties of Two Isomeric Phenanthroacephenanthrylene Derivatives

Cyclopenta‐annulated polycyclic aromatic hydrocarbons (CP‐PAHs) are of significant interest due to their unique optoelectronic properties and applications in organic electronic devices. Phenanthroacephenanthrylene (PAP) isomers are CP‐PAHs that have been rarely investigated, and only the [9,10‐e]PAP isomer was explored to date. Herein, we report the syntheses, crystal structure and optoelectronic properties of two PAP isomers, 7‐ethoxy[2,1‐e]PAP 1 and 9‐ethoxy[1,2‐e]PAP 2. The structural isomers were synthesized in multi‐steps, and structural elucidations were performed using NMR, mass, and single‐crystal X‐ray diffraction analyses, revealing planar backbone of the isomers. UV‐visible absorption and fluorescence spectra of compound 1 were red‐shifted than that of 2, suggesting smaller HOMO–LUMO energy gap which is further validated by DFT calculations that suggested the lowering of HOMO–LUMO spacing could be attributed to the greater destabilization of HOMO for 1.

MAPLE-Deposited Perylene Diimide Derivative Based Layers for Optoelectronic Applications.

Nowadays, the development of devices based on organic materials is an interesting research challenge. The performance of such devices is strongly influenced by material selection, material properties, design, and the manufacturing process. Usually, buckminsterfullerene (C60) is employed as electron transport material in organic photovoltaic (OPV) devices due to its high mobility. However, considering its low solubility, there have been many attempts to replace it with more soluble non-fullerene compounds. In this study, bulk heterojunction thin films with various compositions of zinc phthalocyanine (ZnPc), a perylene diimide derivative, or C60 were prepared by matrix-assisted pulsed laser evaporation (MAPLE) technique to assess the influence of C60 replacement on fabricated heterostructure properties. The investigations revealed that the optical features and the electrical parameters of the organic heterostructures based on this perylene diimide derivative used as an organic acceptor were improved. An increase in the JSC value (4.3 × 10-4 A/cm2) was obtained for the structures where the perylene diimide derivative acceptor entirely replaced C60 compared to the JSC value (7.5 × 10-8 A/cm2) for the heterostructure fabricated only with fullerene. These results are encouraging, demonstrating the potential of non-fullerene compounds as electron transport material in OPV devices.

Impact of Calcium Doping on the Electronic and Optical Characteristics of Strontium Hydride (SrH2): A DFT Study

This study investigates the electronic and optical properties of calcium-doped strontium hydride (SrH2) using first-principles density functional theory (DFT) calculations via the CASTEP code with generalized gradient approximation (GGA). We explore the impact of calcium (Ca) doping on the electronic band structure, density of states (DOS), and optical absorption spectra of SrH2. Our results show that Ca doping significantly alters the electronic properties of SrH2, notably increasing the indirect bandgap from 1.3 eV to 1.6 eV. The DOS analysis reveals new states near the Fermi level, primarily from Ca 3d orbitals. Moreover, the optical absorption spectra display enhanced absorption in the visible range, suggesting the potential for optoelectronic applications. This research highlights the feasibility of tuning the electronic and optical characteristics of SrH2 through Ca doping, thus opening the way for the generation of advanced materials with tailored properties.

Strategic Design of Anion-Responsive Triarylboranes Exhibiting Colorimetric and Fluorometric Red-Shift for Sensing and Optoelectronic Applications.

Triarylboranes (TABs) have been employed as colorimetric and/or fluorometric anion sensors. The majority of TAB-based anion sensors exhibit blue-shift modes of absorption and photoluminescence (PL) or turn off of PL, attributed to the intrinsic electronic polarity of the trivalent boron unit in their molecular designs. In this Concept article, we introduce a novel approach to modulating the photophysical properties of TABs toward a red-shift mode by balancing the dual, opposing roles of the amine-bridged TAB (phenazaborine). This molecular design strategy enables significant changes in color and emission response to anions, shifting to the lower energy regime in solution. Additionally, this approach is applicable to the solid-state modulation of PL in films and organic light-emitting diodes (OLEDs).

Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Multi-Heterostructures.

Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition-metal dichalcogenides. We experimentally demonstrate an average total absorption in the visible range (450-700 nm) of >70% using <4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency of 15.54% and a specific power >300 W g-1 may be achieved in a photovoltaic cell based on this metamaterial absorber.