Optoelectronic Properties Research Articles

Single Crystal Sn-Based Halide Perovskites.

Sn-based halide perovskites are expected to be the best replacement for toxic lead-based counterparts, owing to their similar ionic radii and the optimal band gap for use in solar cells, as well as their versatile use in light-emitting diodes and photodetection applications. Concerns, however, exist about their stability under ambient conditions, an issue that is exacerbated in polycrystalline films because grain boundaries present large concentrations of defects and act as entrance points for oxygen and water, causing Sn oxidation. A current thriving research area in perovskite materials is the fabrication of perovskite single crystals, promising improved optoelectronic properties due to excellent uniformity, reduced defects, and the absence of grain boundaries. This review summarizes the most recent advances in the fabrication of single crystal Sn-based halide perovskites, with emphasis on synthesis methods, compositional engineering, and formation mechanisms, followed by a discussion of various challenges and appropriate strategies for improving their performance in optoelectronic applications.

AFM-IR of Electrohydrodynamically Printed PbS Quantum Dots: Quantifying Ligand Exchange at the Nanoscale.

Colloidal quantum dots (cQDs), semiconductor materials with widely tunable properties, can be printed in submicrometer patterns through electrohydrodynamic printing, avoiding aggressive photolithography steps. Postprinting ligand exchange determines the final optoelectronic properties of the cQD structures. However, achieving a complete bulk exchange is challenging, and the conventional vibrational analysis lacks the required spatial resolution. Infrared nanospectroscopy enables quantitative analysis of vibrational signals and structural topography on the nanometer scale upon ligand substitution on lead sulfide cQDs. A solution of ethanedithiol led to rapid (∼60 s) exchange of ≤90% of the ligands, in structures up to ∼750 nm thick. Prolonged exposures (>1 h) caused the degradation of the microstructures, with a systematic removal of cQDs regulated by surface:bulk ratios and solvent interactions. This study establishes a method for the development of devices through a combination of tunable photoactive materials, additive manufacturing of microstructures, and their quantitative nanometer-scale analysis.

Graphene electrode-enhanced InSe/WSe2 van der Waals heterostructure for high-performance broadband photodetector with imaging capabilities

2D vdWs heterostructure is realized as a powerful technique for tuning the optoelectronic properties and thus developing the future generation optoelectronic devices, especially for photodetectors. However, photodetectors based on 2D vdWs heterostructure suffer from responsivity, detectivity, and large photoresponse speed inhibits their applications in further diverse areas. Here, a graphene electrode-based InSe/WSe2 vdWs heterostructure is proposed aiming to develop a high-performance photodetector. Owing to the graphene electrode, the heterostructure devices build a strong electronic field at the surface of the InSe/WSe2 vdWs heterostructure. As a result, the device shows excellent optoelectronic characteristics such as broad band photoresponse ranging from 532 nm (visible) to 1100 nm (near infrared) including a high responsivity of 829.7 AW−1, a detectivity of 2.81×1014 Jones and a rapid photoresponse of 10 µs. Significantly, as presented photodetector device is applied in an imaging system, showcasing its capability for high-contrast photodetection. These findings highlight that the potential of graphene electrode integration in 2D vdWs heterostructure provides an effective roadmap for developing the advancing next generation of optoelectronic devices.

Enhanced Responsivity and Photostability of Cs3Bi2I9-Based Self-Powered Photodetector via Chemical Vapor Deposition Engineering.

Lead-based halide perovskites have gained significant prominence in recent years in optoelectronics and photovoltaics, owing to their exceptional optoelectronic properties. Nonetheless, the toxicity of lead (Pb) and the stability concern pose obstacles to their potential for future large-scale market development. Herein, stable lead-free Cs3Bi2I9 (CBI) films are presented with smooth and compact morphologies synthesized via chemical vapor deposition (CVD), demonstrating their application as an UV photodetector in a self-powered way. The self-powered photodetectors (SPDs) exhibit remarkable characteristics, including a responsivity of 1.57 AW-1 and an impressive specific detectivity of 3.38 × 1013 Jones under the illumination of 365nm at zero bias. Furthermore, the SPDs exhibit a nominal decline (≈2.2%) in the photocurrent under constant illumination over 500h, highlighting its impressive long-term operational stability. Finally, the real-time UV-detection capability of the device is demonstrated by measuring the photocurrent under various conditions, including room light and sunlight at different times. These findings offer a new platform for synthesizing stable and high-quality perovskite films, and SPDs for advancing the development of wearable and portable electronics.

Mapping Spatial Strain Distribution and Its Effects on Optoelectronic Properties in Wrinkled Perovskite Films.

Organic-inorganic halide perovskite films, fabricated by using the antisolvent method, have garnered intense attention for their application in high-efficiency and stable solar cells. These films characteristically develop periodic wrinkled microstructures. Previous research has indicated that macroscopic residual strain significantly influences the optoelectronic behaviors of these films. However, the detailed interplay between the wrinkled morphology, strain distribution, and local photophysical properties at the micro- and nanoscale has not been fully elucidated. Here, we explore the microscopic morphology-strain-property relationship within wrinkled perovskite films employing correlative micro-optical and nanoelectrical microscopy techniques. Microphotoluminescence (PL) mapping supplemented by in situ strain PL measurements identifies a heterogeneous spatial strain distribution across the microstructural hills and valleys. Additionally, light-intensity-dependent photoconductive atomic force microscopy reveals that valleys experiencing less compressive strain exhibit a lower conductivity and a higher propensity for ion migration. The findings underscore the potential of targeted strain engineering to optimize the performance and longevity of perovskite solar cells.

Investigation of structure, optoelectronic, and thermodynamic properties of gallium-based perovskites GaMF3 (M = Ca, and Cd) for solar cell applications

Investigation of structure, optoelectronic, and thermodynamic properties of gallium-based perovskites GaMF3 (M = Ca, and Cd) for solar cell applications

Unveiling the potential of FASnI3 solar cells through advanced charge transport materials: A SCAPS-1D perspective

As demand grows for efficient and affordable photovoltaic technology, investigating alternative materials becomes crucial. Tin-based perovskite has a low bandgap, great optoelectronic properties, and higher carrier mobility. It has become an interesting absorber layer for perovskite solar cells (PSCs). However, improving their device performance presents challenges. Copper-based hole transport materials (HTM) and zinc-based electron transport materials (ETM) offer low cost, easy fabrication, and high electrical conductivity. This research analyzes the impacts of these transport materials on the FASnI3 absorber layer using numerical modeling in SCAPS-1D. Through simulation analysis, the study thoroughly examines the effect of these materials on PSC performance parameters such as QE curve, layer thickness, defect density, interface defect, and doping concentration. Moreover, this study identifies the most efficient PSC configurations, achieving good performance by ITO/ZnSe/FASnI3/Cu2O/Au with aVoc of 2.05 V, Jsc of 29.316 mA/cm2, FF of 53.37 %, and power conversion efficiency (PCE) of 32.13 %, providing valuable insights in optimizing FASnI3 solar cells and advancing next-generation solar energy conversion technologies.

A theoretical approach to study oxide-based perovskite materials XTiO3 (X = Be, Mg, Ca, Sr and Ba) for photovoltaic applications

Oxide-based perovskite materials have a large application in fuel and hydrogen sensors, non-volatile random access memory devices, semiconductor fabrications, optoelectronic, thermoelectric and photovoltaic devices. In this report, equilibrium geometries, and optoelectronic properties of oxide-perovskite materials XTiO3 (X = Be, Mg, Ca, Sr and Ba) are investigated through Conceptual Density Functional Theory (CDFT) technique. The HOMO–LUMO energy gap obtained from functional B3LYP/LANL2DZ and B3PW91/LANL2DZ are observed in the range of 1.201 eV–4.647 eV and 1.519 eV–4.903 eV respectively, which justifies their applications in solar cells and optoelectronic devices. HOMO–LUMO energy gap shows a downward trend when materials travel from Be to Mg to Ca to Sr to Ba, except for BaTiO3 in B3PW91/LANL2DZ. BeTiO3 displays the maximum value of HOMO–LUMO gap, hardness and electronegativity value. Hardness and softness of these substances are found between 0.600–2.452 eV and 0.204–0.788 eV respectively whereas refractive index and dielectric constant of XTiO3 are observed in the range of 2.017–3.684 and 4.067–13.574 respectively. Across all relationships, XTiO3’s dielectric constant and refractive index show a rising pattern from Be to Mg to Ca to Sr to Ba, except for BaTiO3 computed using B3PW91/LANL2DZ. The lowest refractive index and dielectric constant are displayed by the BeTiO3. TD-DFT calculation is performed to understand the absorption spectra of these materials. Optical transition energy and wavelength of XTiO3 are found between 0.339–3.535 eV and 350.68–3656.15 nm respectively. An interesting relationship is established between HOMO–LUMO energy gap, optical transition energy and wavelength of XTiO3 materials. The investigated compounds exhibit a linear pattern between HOMO–LUMO energy gap and optical transition energy whereas wavelength shows an inverse trend. MEP of these compounds are also discussed.

Performance improvement photodetectors with high speed and detectivity using terbium-doped ZIF-8 and MOF-5 films

Crystal engineering is critical for improving the crystal quality and tuning the optoelectronic properties of metal-organic frameworks (MOFs) materials. Doping MOFs is one of the practical approaches to improve the optoelectronic properties of MOFs. Here, a simple and effective method is used to grow MOF nanoparticles as films on the surface of the material. MOF-5 and ZIF-8 nanoparticles can be uniformly grown as films on the Si substrates. The crystalline quality of MOF films is improved after doping with Tb. Meanwhile, two-dimensional conducting photodetectors and photodetector arrays were prepared with perovskite films. Meanwhile, planar conducting photodetector arrays were prepared with MOF films. The photoluminescence (PL) intensity of the Tb-ZIF-8 and Tb-MOF-5 films shows an improvement compared to both ZIF-8 and MOF-5 layers, which leads to improved charge carriers transfer. The maximum photocurrents were about 4 × 10−8 A and 3 × 10−8 A of exposed light at 525 and 425 nm, respectively, at a fixed bias of 10 V for Tb-ZIF-8. The highest photo response of approximately 2.4 × 10−7 and 1.2 × 10−7 A was measured under 525 and 450 nm for the Tb-MOF-5-based device, respectively. The photocurrent behavior is optimized in the visible range due to the increased number of photo-generated carriers at 525 nm. The Tb-MOF-5 based device is a more powerful photodetector than the Tb-ZIF-8 based device under the same conditions. In addition, the stability of Tb-MOF-5 and Tb-ZIF-8 based photodetectors was obtained 77 % and 30 %, respectively. The photodetectors of Tb-MOF-5 have higher stability and better performance than Tb-ZIF-8.

DFT/TD-DFT study of novel triphenylamine-based dyes with azo moieties and π-spacer variations for enhanced dye-sensitized solar cell performance

This study involves a computational analysis of new D-π-A dyes obtained from triphenylamine (TPA), which contain various azo-dye components. The structural, molecular, electrical, and optical properties of these dyes were computed using Density Functional Theory (DFT) and Time-Dependent DFT, utilizing the B3LYP/6–31 G model. Our research specifically aimed to investigate the effects of incorporating different azo dye constituents in the para position of two phenyl groups of TPA. The results indicate that these alterations lead to notably broadened and red-shifted absorption spectra, as well as improved optoelectronic properties that are subject to additional tuning through the manipulation of the π-spacer. The excitation energies and HOMO-LUMO energy levels that have been estimated indicate the presence of effective electron injection and dye regeneration mechanisms. The results concerning the nonlinear optical (NLO) properties suggest that these dyes are likely to demonstrate superior performance in NLO applications. The factors encompassed in this study consist of light-harvesting efficiency (LHE), open-circuit photovoltage (VOC), electron injection driving force (ΔGinj), dye regeneration driving force (ΔGreg), excited state lifetime (τ) and reorganization energy (λtotal), which has a strong correlation with the electrical current density in a short-circuit (JSC) and DSSC's overall effectiveness. This scientific attempt contributes to the systematic advancement of efficient dyes, demonstrating the possibility for enhanced efficiency in DSSCs. Further validation of computational forecasts and advancement of renewable energy technology necessitate future experimental synthesis and testing.

Transition Metal‐Derived 2D Layered Perovskites: A Promising Alternative to Pb in Photovoltaic Systems

AbstractThe high sensitivity of 3D perovskites toward air and moisture hampers their commercialization due to material decomposition. Introducing their 2D counterparts may provide a remedy to these stability issues, as hydrophobic bulky organic cations can resist direct contact of [ sheets with moisture in the air. In addition to air and water stability, 2D perovskites offer tunable optoelectronic properties through structural modulation, similar to their 3D counterparts. In this study, six different transition metal (TM)‐based 2D hybrid halide perovskites are designed: , , , , , and as alternatives for Pb‐based perovskites. Analysis of structural and thermodynamic parameters demonstrate that these designed perovskite materials can form structurally and thermodynamically stable compounds. Additionally, optical properties analysis reveals that the intended compounds exhibit absorption maxima in the visible range of the electromagnetic spectrum. Among the designed compounds, shows a promising power conversion efficiency (PCE) of 19.63%. Thus, these designed 2D perovskite materials hold potential as substitutes for conventional 3D materials in photovoltaic applications.

Electro-Optically Configurable Synaptic Transistors With Cluster-Induced Photoactive Dielectric Layer for Visual Simulation and Biomotor Stimuli.

The integration of visual simulation and biorehabilitation devices promises great applications for sustainable electronics, on-demand integration and neuroscience. However, achieving a multifunctional synergistic biomimetic system with tunable optoelectronic properties at the individual device level remains a challenge. Here, an electro-optically configurable transistor employing conjugated-polymer as semiconductor layer and an insulating polymer (poly(1,8-octanediol-co-citrate) (POC)) with clusterization-triggered photoactive properties as dielectric layer is shown. These devices realize adeptly transition from electrical to optical synapses, featuring multiwavelength and multilevel optical synaptic memory properties exceeding 3 bits. Utilizing enhanced optical memory, the images learning and memory function for visual simulation are achieved. Benefiting from rapid electrical response akin to biological muscle activation, increased actuation occurs under increased stimulus frequency of gate voltage. Additionally, the transistor on POC substrate can be effectively degraded in NaOH solution due to degradation of POC. Pioneeringly, the electro-optically configurability stems from light absorption and photoluminescence of the aggregation cluster in POC layer after 200°C annealing. The enhancement of optical synaptic plasticity and integration of motion-activation functions within a single device opens new avenues at the intersection of optoelectronics, synaptic computing, and bioengineering.

Enhancing Conductivity in Silicon Heterojunction Solar Cells with Silver Nanowire-Assisted Ti3C2Tx MXene Electrodes for Cost-Effective and Scalable Photovoltaics.

Silicon heterojunction (SHJ) solar cells have set world-record efficiencies among single-junction silicon solar cells, accelerating their commercial deployment. Despite these clear efficiency advantages, the high costs associated with low-temperature silver pastes (LTSP) for metallization have driven the search for more economical alternatives in mass production. 2D transition metal carbides (MXenes) have attracted significant attention due to their tunable optoelectronic properties and metal-like conductivity, the highest among all solution-processed 2D materials. MXenes have emerged as a cost-effective alternative for rear-side electrodes in SHJ solar cells. However, the use of MXene electrodes has so far been limited to lab-scale SHJ solar cells. The efficiency of these devices has been constrained by a fill factor (FF) of under 73%, primarily due to suboptimal charge transport at the contact layer/MXene interface. Herein, a silver nanowire (AgNW)-assisted Ti3C2Tx MXene electrode contact is introduced and explores the potential of this hybrid electrode in industry-scale solar cells. By incorporating this hybrid electrode into SHJ solar cells, 9.0 cm2 cells are achieved with an efficiency of 24.04% (FF of 81.64%) and 252 cm2 cells with an efficiency of 22.17% (FFof 76.86%), among the top-performing SHJ devices with non-metallic electrodes to date. Additionally, the stability and cost-effectiveness of these solar cells are discussed.

Tunable electronic and optical properties of a Type-ⅡViolet Phosphorus/MoS2 heterojunction: First-principles calculation

Photodetectors based on heterostructures have garnered significant research interest due to their superior self-powering and responsiveness capabilities. In this work, the optoelectronic properties of a violet phosphorus (VP/MoS2)/MoS2 heterojunction are investigated through first-principles calculations. The results reveal that the VP/MoS2 heterojunction possesses an indirect bandgap and a type-II band alignment. The interface potential drop (Ep) of the VP/MoS2 heterojunction is 5.45 eV by studying the interfacial interaction, suggesting the formation of a large in-built electric field and an excellent self-powering capability. The absorption coefficient of VP/MoS2 heterojunction are significantly higher in the UV and visible regions. Under biaxial strain, the VP/MoS2 heterostructure can undergo transformations from a semiconductor to a metal, from an indirect to a direct bandgap, and from a type-II to a type-I energy band structure. Moreover, the light trapping ability in the near-infrared region is significantly enhanced. These findings underscore the broader potential application of VP/MoS2 heterostructures in high-performance optoelectronic devices.

Advancements and Challenges of Vacuum‐Processed Organic Photodiodes: A Comprehensive Review

Organic photodiodes (OPDs) have made remarkable strides and now poised to surpass traditional silicon photodiodes (PDs) in various aspects including linear dynamic range (LDR), detectivity, wavelength selectivity, and versatility.[1] Tunable mechanical and optoelectronic properties of organic semiconductors, coupled with lower process costs, have propelled OPDs into the spotlight across fields such as wearable light fidelity systems, flexible image sensors, and biomedical imaging.[2–5] While most advanced organic imaging systems to date rely on polymer‐based solution processes, challenges such as the use of toxic organic solvents and reproducibility issues hinder their commercialization.[6,7] Vacuum‐processed OPDs offer a promising alternative, boasting eco‐friendliness and compatibility with large‐scale fabrication facilities.[8,9] In this review, recent advancements and challenges in vacuum‐processed OPDs, an area that has received less attention compared to solution‐processed counterparts, are explored. Herein, four primary pathways for development of vacuum‐processed OPDs are outlined: 1) ultraviolet‐selective OPDs, 2) visible‐light‐selective OPDs, 3) near‐infrared or short‐wave‐infrared‐sensitive OPDs, and 4) addressing challenges such as higher noise currents compared to inorganic PDs. In this review, it is aimed to furnish readers with a comprehensive understanding of vacuum‐processed OPDs, spanning from materials design to device engineering.

Different temperature-dependent fluorescence properties of CsPbBr3 nanorods and nanowires

Abstract The morphology of totally inorganic metal halide perovskites has a certain influence on their optoelectronic properties. In this study, one-dimensional CsPbBr3 nanorods (NRs) and nanowires (NWs) were arranged utilizing a boiling injection strategy. By controlling the processing time, NRs with a length of roughly 63 nm and NWs with a length of 300 nm were obtained, and it was found that the nanowires were grown from the nanorods. Temperature-dependent photoluminescence (PL) measurements were conducted on CsPbBr3 NRs and NWs, and NRs exhibit a more stable excitonic state at high temperatures (>240 K). This study provides a method to change the morphology of one-dimensional metal halide perovskite nanomaterials without doping, further promoting the application of one-dimensional all-inorganic perovskite materials in the field of optoelectronics.

Prediction of X2AuYZ6 (X = Cs, Rb; Z = Cl, Br, I) double halide perovskites for photovoltaic and wasted heat management device applications

We used density functional theory to study the phase stability, the opto-electronic properties, and the thermo-electric behavior of X2AuYZ6 (where X = Cs, Rb, and Z = Cl/Br/I) double halide perovskites. The compounds belong to the cubic perovskite arrangement and are verified by the tolerance and octahedral factor. Formation enthalpy and binding energy primarily meet the requirements for structural stability. The positive frequency of phonon dispersion shows that all compounds are dynamically stable except for Rb2AuYI6. The negative formation energy considering the competing phase also confirmed that all compounds are thermodynamically stable. The Pugh's ratio, Poisson's ratio, and Cauchy pressure validated their ductile nature in the analysis of thermo-mechanical behavior. The electronic characteristics of Cs2AuYZ6 (Rb2AuYZ6) [Z = Cl, Br, I] double halide perovskites (DHP) have been investigated using the TB-mBJ technique, yielding band gap values of 2.85 (2.91), 2.35 (2.40), and 1.74 (1.78) eV, in that order. The optical properties are calculated, revealing the maximum absorption coefficients with respect to wavelength in the visible range of the titled compounds are 0.23 (0.35) × 105 cm−1, 1.01 (1.06) × 105 cm−1, and 1.42 (1.48) × 105 cm−1, respectively, indicating their potential for photovoltaic applications. The thermo-electric transport properties were also studied. The investigated compounds [Cs (Rb)-based] exhibit ZT values of 0.51 (0.55), 0.53 (0.62), and 0.58 (0.75) at room temperature with Cl, Br, and I, respectively. As a result, the studied compounds, particularly those Rb-based with halides, have significantly greater potential than Cs in thermoelectric fields. So, among the compounds, X2AuYI6 (X = Cs, Rb) shows the most promise for the technological applications mentioned above due to its lower band gap, high absorption coefficient, and high ZT value.

DFT/TDDFT Investigation of the Effect of Electron Acceptor Groups on Photovoltaic Performance Using Phenothiazine‐Based D‐Ai‐π‐A Dyes for DSSC Applications

AbstractThis review focuses mostly on organic dye‐sensitized solar cells, as they are an attractive, environmentally friendly alternative to traditional silicon solar cells for the production of renewable energy at a lower cost. The dye chromophore is recognized as the central component of the DSSC device. To improve the electrochemical, photovoltaic, and absorption properties of organic sensitizing dyes, we have designed a series of eight new dyes Pi (i = 1.8) based on the DPA‐2 architecture (the reference molecule). We have investigated the effects of internal absorption of different acceptor groups in D‐Ai‐π‐A before and after binding to the TiO2 cluster surface on the ability to inject electrons into the surface. The benzophenothiazine is the D donor, the π‐spacer is furan, and the A acceptor is cycnoacrylic acid. We are using time‐dependent density functional theory (TD‐DFT), and density functional theory (DFT) in our quantum calculations. It is theoretically possible to predict suitable candidates for the DSSC device and identify correlations between their structure and properties by using DFT and TD‐DFT simulations to thoroughly study in detail electronic structures, natural binding orbital (NBO), analysis of UV‐visible absorption spectra, parameters influencing short‐circuit current density (JSC), open‐circuit voltage (VOC), and intramolecular charge transfer (ICT). Additionally, the relationship between optoelectronic properties and molecular structure was investigated, and the effect of auxiliary acceptor groups (Ai) on the primary photovoltaic properties of the reference molecule DPA‐2. The results show that by changing the internal acceptor to DPA‐2 could create a more coplanar and rigid structure. This would cause the energy gap (Eg) for each of the dyes created to significantly shrink, reducing it from 2.29 to 1.38 eV. The absorption spectra's λmax for each dye would also change color, this was because the acceptor moiety Ai of the phenothiazine moiety changed when it came to DPA‐2 (not including compounds P1 and P4). In contrast, P6 and P7 dyes demonstrate an absorption range beyond 500 nm, implying a more efficient utilization of sunlight in the visible spectrum compared to other dyes. Furthermore, all organic dyes show a robust LHE performance (0.919 to 0.993), correlating with the lowest ΔGreg values (0.097 to 0.356) and the most negative ΔGinject values (−2.067 to −1.121). The power conversion efficiency of PCE and JSC could increase according to these results. Therefore, theoretical research into adding a second internal acceptor group to the D‐Ai‐π‐A structure should produce new methods for improving solar energy output.

A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices.

Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiOx:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiOx:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiOx:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure. A theoretical analysis of charge carrier transport mechanisms in silicon heterojunction (SHJ) solar cells with wide band gap layers is then presented. Afterwards, the authors focus on the recent developments in the implementation of nc-SiOx:H and hydrogenated amorphous silicon oxide (a-SiOx:H) films for SHJ, passivating contacts, and perovskite/silicon tandem devices.

Scalable Fabrication of Black Phosphorous Films for Infrared Photodetector Arrays.

Bulk black phosphorous (bP) exhibits excellent infrared (IR) optoelectronic properties, but most reported bP IR photodetectors are fabricated from single exfoliated flakes with lateral sizes of <100µm. Here, scalable thin films of bP suitable for IR photodetector arrays are realized through a tailored solution-deposition method. The properties of the bP film and their protective capping layers are optimized to fabricate bP IR photoconductors exhibiting specific detectivities up to 4.0×108cm Hz1/2 W-1 with fast 30/60 µs rise/fall times under λ = 2.2µm illumination. The scalability of the bP thin film fabrication is demonstrated by fabricating a linear array of 25 bP photodetectors and obtaining 25×25pixel IR images at ≈203ppi with good spatial fidelity. This research demonstrates a commercially viable method of fabricating scalable bP thin films for optoelectronic devices including room temperature-operable IR photodetector arrays.