Optimum Band Gap Research Articles

Impact of graded CIGS absorber layer on Cd-free CIGS thin-film solar cell performance: numerical optimization

Abstract This paper investigates replacing the CdS buffer layer with (Zn, Mg)O and Zn(S, O) double buffer layers. To increase the efficiency of the structure, our strategy involves numerically studying and comparing three types of CIGS bandgap absorber layers: FB (Flat Band), Double Gradient Bandgap (DG) with a high bandgap near the Mo contact (back side), a low bandgap near the buffer layer (front side), and a minimum bandgap between them, and Simple Gradient Bandgap (SG) with a high bandgap near the Mo contact (back side) and a low bandgap near the buffer layer (front side). Each type features different linear graded profiles in the thickness direction to determine the optimal bandgap gradient of the CIGS layer. The performance of the three types is numerically analyzed using the SCAPS-1D simulator. Simulation enables us to test multiple structural combinations efficiently, saving both time and money, while providing results that guide experimental research. The proposed device structure is composed of the following layers: ZnO:Al/n-Zn1-xMgxO/n- ZnSxO1-x/p- Graded-CuIn1-xGaxSe2 /Mo. To study the effects of linear bandgap gradient distribution of Ga⁄((Ga+In) ) ratio according to the thickness direction on CIGS solar cell performance, the electrical properties of the proposed CIGS model were initially matched with experimental data to confirm the structure's accuracy. It was found that the Double Gradient Bandgap (DG), with maxima of 1.44 eV at the back side (near Mo contact), 1.238 eV at the front side (near n-type buffer layer interface), and a minimum of 1.154 eV at a position of 1.7 µm from the back side, has a higher efficiency than the other structures with 26.22% (Voc = 0.8134 V, Jsc = 37.82 mA/cm², FF = 85.21%). Optimizing the bandgap gradient of the CIGS absorber layer helps improve the efficiency of CIGS solar cells. 

Device optimization of all-perovskite triple-junction solar cells for realistic irradiation conditions

All-perovskite two-terminal tandem solar cells, comprising two or more junctions, offer high power conversion efficiencies (PCEs) that exceed the limits of single-junction photovoltaics. Realizing high-efficiency SCs requires carefully optimizing the photoactive layer, front electrodes, and functional layers. Here, we first aim to determine the optimal device architecture, i.e., the perovskites bandgaps and optimum layer thicknesses, for standard test conditions (STCs). We then optimize the energy yield (EY) under realistic outdoor conditions (ROCs), i.e., the overall electrical energy to be expected in one year at a specific location. In the first step, we reference our simulation with two terminal all-perovskite triple-junction SCs (2T3J-PSCs) to previously experimentally realized PSC with a PCE of 20.1% as a benchmark to derive the underlying diode parameters and use our in-house energy yield code combined with a hybrid particle swarm optimization and gravitational search algorithm (PSOGSA) to find the optimal bandgap combination and perovskite layer thicknesses. The optimized SCs with the optimal bandgap combination offer a PCE of 25.1% with a current density of 10.1 mA/cm2. Furthermore, the effect of the other functional layers, such as transparent conductive oxide (TCO), hole transport layer (HTL), and recombination junctions (RJs), is also investigated to enhance the cell performance further. The SCs with optimized layers exhibit improved parameters: PCE of 27.1%, with a relative improvement of 34.8% in the PCE compared with the fabricated cell, and a high current matching a of 10.8 mA/cm2. The numerical results showed that the reported cell can potentially achieve a PCE of 36% at an eVoc/EG ratio of 0.72. However, the optimal parameters may vary in real-world operating conditions due to variations in temperature, humidity, and light exposure. As a result, the optimal energy yield (EY) parameters may differ. Therefore, the energy yield optimizing process is also carried out by considering ROCs in Phoenix, AZ, USA, to find the best parameters under these conditions. We found that the optimum top layer bandgap under ROCs is lower than under STCs due to a bluer, more shifted spectrum in ROCs. After that, the optimized cell under ROCs is tested in several locations exhibiting different climatic conditions (Seattle, Honolulu, Los Angeles, Miami, and Milwaukee). The numerical results show that the optimized cell under ROCs offers an increase in energy yield in several locations compared to conventional single-junction crystalline Si-SCs (PCE = 23.6%) with a high energy yield of 648.2 kWh/m2 in Phoenix, with an improvement of 39.9% in the EY compared to the Si-SC counterpart. Our results provide design guidelines for fabricating a highly efficient triple-junction perovskite SC in the lab and outdoor applications and improve the efficiency of 2T3J-PSCs beyond the 30% limit.

Performance of Triple-Cation Perovskite Solar Cells under Different Indoor Operating Conditions.

We systematically analyze triple-cation perovskite solar cells for indoor applications. A large number of devices with different bandgaps from 1.6 to 1.77 eV were fabricated, and their performance under 1-sun AM1.5 and indoor white light emitting diode (LED) light was compared. We find that the trends agree well with the detailed balance limit; however, the devices near the optimal bandgap (1.77 eV) perform worse due to the lower perovskite quality. Instead, we achieve the highest power conversion efficiency (PCE) of 34.0% under 870 lx with 1.67 eV and Al2O3 passivation. The perovskite with a bandgap of 1.71 eV is not far behind, with a high VOC of 1.02 V. Measurements under different white LED color temperatures confirm that the highest PCE is achieved under the warmest colors. All measurements were carried out in a dedicated indoor setup that ensures the diffuse light typical of indoor environments and allows both short- and long-term measurements. In the best case, we observe no degradation during the 33-day test under simulated office conditions with regular switching on and off of the light and a T80 of 30 days under continuous illumination. The results were obtained from multiple batches, which corroborates our findings and gives them statistical relevance.

Nanocomposite Material Sb2S3:SnS:MnS2 its Fabrication and Utilization as Efficient Electrode for Energy Storage in Supercapacitor

AbstractThe nanocomposite material Sb2S3: SnS:MnS2 was fabricated by single precursor technique by using dithio‐carbamate ligand as Sb2S3:SnS:MnS2 (DDTC) complex. An internal and external look at the anatomy and activity of the substance was obtained by using a variety of analytical techniques like XRD, FTIR, UV‐Vis and SEM. Additionally, various electro‐analytical tools like LSV, CV, GCD and EIS were applied to confirm material's rich electro‐active capability for photoactive electrode. XRD revealed its average crystallite size of 12.33 nm with 82.8 % crystallinity. Optical characteristics represented describe effective semiconducting nature of nanomaterials with optimum band gap of 2.65 eV. By using electrochemical processes, LSV and CV demonstrated fertile opto‐electrical nature of Sb2S3: SnS: MnS2 (DDTC) material with specific capacitance, Csp, of 1080 F/g at scan rate of 2 mV/s. With a high specific power density of 2656 W/kg, the GCD technique attempted to validate the nature of the material as an electrode with a good charge‐discharge mechanism. In EIS, low series resistance, Rs=0.73 Ω, was observed to be very beneficial argument in validating the nanocomposite synthesized in this research project as effective and low‐cost material which can be applied in different energy producing and storing devices like solar system and super‐capacitors etc.

Breakdown cost and recycling processes of Bentonite/TiO2 quantum dots of photo and solar degradation of Congo Red dye and industrial dyes wastes

This research presents the preparation, characterization, and application of a novel bentonite- TiO2 quantum dot (Bent/TQ) nanocomposite for the efficient photodegradation of Congo Red dye, a common pollutant in industrial wastewater. The composite was prepared via a co-precipitation method followed by calcination, which facilitated the uniform dispersion of TiO2 quantum dots within the bentonite matrix. The resulting material exhibited a high specific surface area of 205.45 m2/g and an optimized band gap of 3.15 eV, making it suitable for visible light photocatalysis. The photocatalytic efficiency of Bent/TQ was evaluated under both xenon lamp irradiation and natural sunlight. The composite demonstrated a significant degradation rate constant of 23.35 × 10⁻³ s⁻1, which is comparable to that of pure TiO2 quantum dots (28.86 × 10⁻³ s⁻1). Mechanistic studies revealed that the primary active species responsible for the degradation were hydroxyl radicals (•OH), generated through the interaction of photogenerated electron-hole pairs with H2O molecules and molecular oxygen. Total Organic Carbon (TOC) and Chemical Oxygen Demand (COD) analyses were employed to assess the mineralization efficiency of the composite. The Bent/TQ catalyst achieved a COD removal efficiency of 84.5% and a TOC reduction of 76.2% after 240 minutes of irradiation under natural sunlight. Reusability tests indicated that the photocatalyst retained approximately 80% of its original efficiency after seven consecutive cycles, though a slight decline was observed due to particle agglomeration under prolonged light exposure. The economic analysis suggested that the use of Bent/TQ nanocomposites could reduce operational costs by 29.12% compared to conventional TiO2-based systems, making it a cost-effective solution for large-scale wastewater treatment. This work highlights the potential of Bent/TQ nanocomposites as sustainable and efficient photocatalysts for environmental remediation, with future efforts aimed at enhancing their long-term stability and expanding their applicability to a broader range of pollutants.

A comparative study of BiFeO3-based compounds for enhanced hydrogen evolution reaction

We present a comprehensive study, combining experimental and theoretical approaches, to assess the hydrogen evolution reaction (HER) efficiency of BiFeO3-based solid solutions. Initially, we investigate the electronic and optical properties of these compounds, with a particular focus on band edge alignment relative to water redox potentials. Our findings show that the materials exhibit optimal band gaps of approximately 2.0 eV, indicative of enhanced visible light absorption and favorable energetic alignment to drive efficient hydrogen generation. To corroborate our theoretical predictions, we perform photoelectrochemical measurements on selected BiFeO3-based compounds synthesized via the solid-state method. Our experimental results reveal a high hydrogen yield, with BiFeO3-SrTiO3 achieving a production rate of ∼114 µmol/L in 30 min, outperforming BiFeO3-BaTiO3 (∼70 µmol/L) and pristine BiFeO3 (∼61 µmol/L). These findings validate our theoretical assumptions and demonstrate the superior HER performance of BiFeO3-SrTiO3, positioning it as a highly promising candidate for sustainable hydrogen production.

Feasibility of Exceeding 20% Efficiency for Kesterite/c-Silicon Tandem Solar Cells Using an Alternative Buffer Layer: Optical and Electrical Analysis.

Tandem solar cells have the potential to be more efficient than the Shockley-Queisser limit imposed on single junction cells. In this study, optical and electrical modeling based on experimental data were used to investigate the possibility of boosting the performance of kesterite/c-Si tandem solar cells by inserting an alternative nontoxic TiO2 buffer layer into the kesterite top subcell. First, with SCAPS-1D simulation, we determined the data reported for the best kesterite (CZTS (Eg = 1.5 eV)) device in the experiments to be used as a simulation baseline. After obtaining metric parameters close to those reported, the influence on the optoelectronic characteristics of replacing CdS with a TiO2 buffer layer was studied and analyzed. Different top subcell absorbers (CZTS0.8Se0.2 (Eg = 1.4 eV), CZTS (Eg = 1.5 eV), CZTS (Eg = 1.6 eV), and CZT0.6Ge0.4S (Eg = 1.7 eV)) with different thicknesses were investigated under AM1.5 illumination. Then, to achieve current matching conditions, the c-Si bottom subcell, with an efficiency at the level of commercially available subcells (19%), was simulated using various top subcells transmitting light calculated using the transfer matrix method (TMM) for optical modeling. Adding TiO2 significantly enhanced the electrical and optical performance of the kesterite top subcell due to the decrease in parasitic light absorption and heterojunction interface recombination. The best tandem device with a TiO2 buffer layer for the top subcell with an optimum bandgap equal to 1.7 eV (CZT0.6Ge0.4S4) and a thickness of 0.8 µm achieved an efficiency of approximately 20%. These findings revealed that using a TiO2 buffer layer is a promising way to improve the performance of kesterite/Si tandem solar cells in the future. However, important optical and electrical breakthroughs are needed to make kesterite materials viable for tandem applications.

Bias‐Induced Gradient Bandgap of Bulk Perovskite Boosting Built‐In Electric Fields for High‐Performance Self‐Powered Photodetectors

AbstractSelf‐powered photodetectors (PDs) have gained significant attention in recent years due to their ability to operate without external power. Strengthening the built‐in electric field (Ebi) of these devices is crucial for efficient carrier separation and transport. However, the disordered energy level arrangement within mixed halide perovskites (MHP) often conflicts with the energy levels constructed by the external interface, weakening the Ebi and thus affecting the performance of self‐powered PDs. In this study, a bias‐induced gradient bandgap of bulk MHP is proposed for high‐performance self‐powered photodetectors. The vector superposition of the bias‐induced gradient bandgap with the interface electric field significantly boosts the Ebi of the device, providing a powerful driving force for the separation and transport of photogenerated carriers. The obtained device exhibits exceptional performance, including an ultra‐fast response time of 1.14/1.75 µs, a large specific detectivity of 7.27 × 1012 cm Hz1/2 W−1, an ultra‐high responsivity of 0.49 A W−1, and an external quantum efficiency of 93.5% at 0 V bias. Furthermore, this strategy is also demonstrated in lateral structure photodetector. This work offers valuable guidance for achieving high‐performance MHP‐based self‐powered PDs through bias‐induced gradient bandgap optimization.

An inorganic lead-free Cs2SnI6-based perovskite solar cell optimization by SCAPS-1D

Cs2SnI6 is an environmentally friendly and reliable perovskite solar cell (PSCs) material. Its optimal band gap and strong light absorption make it a promising candidate for the absorption layer. However, the current challenge is to improve its photoelectric conversion efficiency. To address this, this study investigates the performance of PSCs based on Cs2SnI6 using SCAPS-1D simulation. The influence of various factors on PSC performance is examined, including different hole transport layers(HTLs) and electron transport layers(ETLs), perovskite layer thickness, ETL doping density, HTL doping density, absorber doping density, perovskite layer defect density, different back contacts and temperature. Finally, a Cs2SnI6-based solar device with an inorganic configuration of FTO/NiO/Cs2SnI6/SnO2/Au has been developed, reaching the power conversion efficiency(PCE) of 28.69 %. The study demonstrates that Cs2SnI6 PSCs exhibit promising photovoltaic performance, offering valuable insights for the solar energy sector in the production of cost-effective, efficient, and environmentally friendly Cs-based perovskite solar cells.

Efficiency Investigation and Modeling of an Ultra Thin-film CIGS Solar Cell using WxAMPS

The highly efficient CIGS thin-film solar cell is numerically investigated in this paper using solar simulator software wxAMPS (Analysis of Microelectronic and Photonic Structures). WxAMPS is a customized simulation software package mainly used for photovoltaic cells, which supports quick data input and enhanced visualization with its improved user interface. Copper–indium–gallium–diselenide Cu(In, Ga)Se2 (CIGS) is a semiconductor material with chalcopyrite crystal structure that has high conversion efficiency and structural stability. CIGS model- ZnO: Al/ZnO/CdS/CIGS/Mo/substrate is mainly experimental research that considers the physical characteristics, dimensions, and thicknesses of the different layers. The bilayer window and absorber layer with different thicknesses are the critical factors that influence solar cell performance. The bilayer window concept can assist in reducing the loss at the window layer. In this paper, through the numerical simulation, the highest conversion efficiency was achieved, 18.7%, with an optimum bandgap of 1.12 eV with 3000 nm thickness of the absorber layer under AM 1.5G.

Investigation of annealing temperature effect on structural, morphological, optical, magnetic, and dielectric properties of cobalt-doped manganese ferrites

Spinel ferrite Mn0.95Co0.05Fe2O4 was prepared via chemical co-precipitation routes and annealed at four distinct temperatures of 600 °C, 650 °C, 700 °C, and 750 °C. The XRD peak confirmed a single-phase cubic spinel structure, with an increasing crystallite size of 21.64–23.98 nm by the annealing effect. The TEM images show an increase in particle size with rising annealing temperature and indicate well-defined nanocrystalline Mn-Co ferrite. FT-IR spectra detected two vibrational modes at interstitial sub-lattice sites, identifying Co-O, Mn-O, and Fe-O bonds with the spinel structure of Mn-Co ferrite. UV–vis–NIR reflectance revealed an optimal direct band gap of 3.76–4.70 eV, indicating a scope of semiconducting behaviors in the nanocatalysts. In the magnetic hysteresis curve, saturation magnetization decreased while coercivity increased with rising annealing and crystallite size. The M-T loop reveals the Curie temperature of Mn-Co ferrite decreases from 533.84 °C to 382.74 °C. Frequency-dependent complex permeability at different annealing temperatures shows stable initial permeability over a wide frequency range (1 kHz to 100 MHz) and a quality factor several times higher due to reduced magnetic tangent loss. The real dielectric constant and losses decline in rising alternating fields (100 Hz to 1 MHz) and stabilize at higher frequencies following Maxwell-Wagner-type polarization. Eventually, structural, morphological, and magnetic properties are performed relatively well at higher annealing temperatures, and optical and dielectric properties are performed at lower annealing temperatures.

Piezoelectric GaGeX2 (X = N, P, and As) semiconductors with Raman activity and high carrier mobility for multifunctional applications: a first-principles simulation.

In the present work, we propose GaGeX2 (X = N, P, As) monolayers and explore their structural, vibrational, piezoelectric, electronic, and transport characteristics for multifunctional applications based on first-principles simulations. Our analyses of cohesive energy, phonon dispersion spectra, and ab initio molecular dynamics simulations indicate that the three proposed structures have good energetic, dynamic, and thermodynamic stabilities. The GaGeX2 are found as piezoelectric materials with high piezoelectric coefficient d 11 of -1.23 pm V-1 for the GaGeAs2 monolayer. Furthermore, the results from electronic band structures show that the GaGeX2 have semiconductor behaviours with moderate bandgap energies. At the Heyd-Scuseria-Ernzerhof level, the GaGeP2 and GaGeAs2 exhibit optimal bandgaps for photovoltaic applications of 1.75 and 1.15 eV, respectively. Moreover, to examine the transport features of the GaGeX2 monolayers, we calculate their carrier mobility. All three investigated GaGeX2 systems have anisotropic carrier mobility in the two in-plane directions for both electrons and holes. Among them, the GaGeAs2 monolayer shows the highest electron mobilities of 2270.17 and 1788.59 cm2 V-1 s-1 in the x and y directions, respectively. With high electron mobility, large piezoelectric coefficient, and moderate bandgap energy, the GaGeAs2 material holds potential applicability for electronic, optoelectronic, piezoelectric, and photovoltaic applications. Thus, our findings not only predict stable GaGeX2 structures but also provide promising materials to apply for multifunctional devices.

Bandgap Optimization in N-Doped Ag-Enhanced ZnO-MWCNT Nanocomposites for Improved Absorption

Bandgap Optimization in N-Doped Ag-Enhanced ZnO-MWCNT Nanocomposites for Improved Absorption

Constructing a Z-scheme heterojunction of oxygen-deficient WO3-x and g-C3N4 for superior photocatalytic evolution of H2

Semiconductor-based photocatalytic water splitting enables the conversion of abundant solar energy to green and renewable hydrogen energy. Graphitic carbon nitride (g-C3N4) is synthesized using a straightforward method, demonstrating stable physicochemical properties and possessing an optimal bandgap, thus positioning it as a promising photocatalyst in the realm of environmental sustainability. Oxygen vacancies are extensively employed to modulate light absorption and surface properties of metal-oxide semiconductors. In this study, g-C3N4 nanosheets were coupled with oxygen-deficient tungsten trioxide (WO3-x) to form heterojunction photocatalysts (X-WOCN). Comprehensive material characterization results demonstrated that the constructed heterojunction extended the visible light absorption range, improved photogenerated electron-hole separation efficiency, and thus augmented photocatalytic activity. Notably, the optimum hydrogen evolution rate of 6%-WOCN was enhanced by 5.4-fold compared to that of g-C3N4. Furthermore, we propose a Z-scheme heterojunction charge separation mechanism mediated by oxygen defects and support this mechanism through detection of surface-active substances •O2− and •OH. This study offers novel propositions into the function of oxygen defects in facilitating charge separation within Z-scheme heterojunction.

Ae3[TO3][SnOQ3] (Ae = Sr, Ba; T = Si, Ge; Q = S, Se) and Ba3[CO3][MQ4] (M = Ge, Sn; Q = S, Se): Design and Syntheses of a Series of Heteroanionic Antiperovskite-Type Oxychalcogenides.

The heteroanionic materials (HAMs) have attracted more and more attention because they can better balance the functional properties of materials. However, their rational structural design is still a great challenge. Here, by using the antiperovskite Ba3S[GeS4] as a template and calculating the tolerance factor (t) as a reference, eight heteroanionic oxychalcogenides with balanced properties were finally synthesized by a partially group-substitution method. Among them, Ba3[CO3][MQ4] (M = Ge, Sn; Q = S, Se) are centrosymmetric (CS) crystals and realize optimization of band gaps and birefringence. For Ae3[TO3][SnOQ3] (Ae = Sr, Ba; T = Si, Ge; Q = S, Se), thanks to the novel [TO4SnQ3] polyanionic groups for the regulation to the antiperovskite structures and the contributions to the nonlinear optical (NLO) properties, they achieve the structural transition from CS to noncentrosymmetry and accomplish an excellent balance among the critical performance parameters as the potential candidates for the infrared NLO materials, including phase-matchable behavior, wide band gaps (Eg = 3.26-3.95 eV), high laser damage threshold (LDT = 3.2-4.4 × AgGaS2), suitable birefringence (Δn = 0.065-0.098@2090 nm) and sufficiently strong second-harmonic generation responses (about 0.6-0.9 × AgGaS2). Moreover, benefiting from crystallization in the polar space groups, they exhibit ferroelectricity and piezoelectricity at room temperature. As far as we know, this is the first reported fully inorganic antiperovskite ferroelectric. These demonstrate that our strategy is desirable and can provide some unique insights into the development of HAMs or antiperovskite materials with specific functions or structures.

Lanthanide‐Like Contraction Enables the Fabrication of High‐Purity Selenium Films for Efficient Indoor Photovoltaics

The lanthanide contraction involves a reduction in atomic radius among f‐block elements below the expected level. A similar contraction is observed in group‐16 elements. The atomic radius of Se (117 pm) is slightly larger than that of S (104 pm) arising from the presence of d electrons, compared to the significant increase in atomic radius from O (73 pm) to S. This lanthanide‐like contraction contributes to Se's robust oxidative resistance. Here we report a selective oxidation strategy utilizing Se's strong antioxidative property to remove coexisting narrow‐bandgap Te impurities from Se feedstocks. This strategy selectively oxidizes volatile Te impurities into involatile TeO2 that remains in the evaporation source, while only volatile Se deposits onto the substrate during the thermal‐evaporation deposition process. This enables the fabrication of high‐purity Se films possessing a wide bandgap of 1.88 eV, ideally suited to the optimal bandgap for indoor photovoltaics (IPVs). The resulting Se photovoltaics exhibit an efficiency of 20.1% under 1000‐lux indoor illumination, outperforming market‐dominant amorphous silicon and all types of lead‐free perovskite IPVs. Unencapsulated Se devices show no efficiency degradation after 20,000 hours of storage in ambient atmosphere.

Lanthanide-Like Contraction Enables the Fabrication of High-Purity Selenium Films for Efficient Indoor Photovoltaics.

The lanthanide contraction involves a reduction in atomic radius among f-block elements below the expected level. A similar contraction is observed in group-16 elements. The atomic radius of Se (117 pm) is slightly larger than that of S (104 pm) arising from the presence of d electrons, compared to the significant increase in atomic radius from O (73 pm) to S. This lanthanide-like contraction contributes to Se's robust oxidative resistance. Here we report a selective oxidation strategy utilizing Se's strong antioxidative property to remove coexisting narrow-bandgap Te impurities from Se feedstocks. This strategy selectively oxidizes volatile Te impurities into involatile TeO2 that remains in the evaporation source, while only volatile Se deposits onto the substrate during the thermal-evaporation deposition process. This enables the fabrication of high-purity Se films possessing a wide bandgap of 1.88 eV, ideally suited to the optimal bandgap for indoor photovoltaics (IPVs). The resulting Se photovoltaics exhibit an efficiency of 20.1% under 1000-lux indoor illumination, outperforming market-dominant amorphous silicon and all types of lead-free perovskite IPVs. Unencapsulated Se devices show no efficiency degradation after 20,000 hours of storage in ambient atmosphere.

Characterization of methylammonium tin iodide thin films prepared by sequential physical vapour deposition

Methylammonium tin triiodide (MASnI3) films were grown through Sequential Physical Vapour Deposition (SPVD) without breaking the vacuum and optimized by varying MAI thickness and annealing time while keeping SnI2 thickness constant. The film's crystallinity increased with MAI thickness and annealing time. Optimal bandgap was attained for the film with 500 nm MAI annealed for 20 & 40 min. FE-SEM revealed densely packed, large grains, increasing in size with MAI thickness and on annealing from 0 to 40 min and decreasing at 80 min. The film with 300 nm MAI thickness annealed for 40 min showed the strongest PL intensity suggesting reduced carrier recombination losses. Trap densities reduced with annealing time and MAI thickness due to improvements in films' crystallinity, grain sizes and reduced grain boundaries which act as carrier trapping sites. Hence, films prepared through SPVD, exhibit excellent structural, optical, and morphological properties, suitable for photovoltaic applications.

Single Crystal Sn-Based Halide Perovskites.

Sn-based halide perovskites are expected to be the best replacement for toxic lead-based counterparts, owing to their similar ionic radii and the optimal band gap for use in solar cells, as well as their versatile use in light-emitting diodes and photodetection applications. Concerns, however, exist about their stability under ambient conditions, an issue that is exacerbated in polycrystalline films because grain boundaries present large concentrations of defects and act as entrance points for oxygen and water, causing Sn oxidation. A current thriving research area in perovskite materials is the fabrication of perovskite single crystals, promising improved optoelectronic properties due to excellent uniformity, reduced defects, and the absence of grain boundaries. This review summarizes the most recent advances in the fabrication of single crystal Sn-based halide perovskites, with emphasis on synthesis methods, compositional engineering, and formation mechanisms, followed by a discussion of various challenges and appropriate strategies for improving their performance in optoelectronic applications.

Efficiency of Heterojunction Solar Cells Based on Optical Band Gap

Electric energy production by fuel burning produces dangerous pollutants. The photovoltaic solar cell is a suitable alternative. For thin film solar cells, efficiency improvement should be carried out through continued development of their characteristics. The homojunction solar cell has reached its optimum. In the present work, a relationship between optical band gap and solar cell efficiency of heterojunctions has been established. Suitable band gaps of a pair of heterojunctions are required to get maximum efficiency for an appropriate frequency of solar radiation. The efficiency of a couple of extrinsic semiconductors can be calculated theoretically. An optimum band gap of a pair of heterojunctions with the highest efficiency may be found by this process. The efficiency of a few heterojunctions has been calculated using reported data. The results show that efficiency is increased with optical band gaps, and type-I is more efficient than type-II heterojunctions. The work may help to improve the solar cell efficiency.