On some occasions, such as new energy clinics, monitoring the trace hydrogen at the ppb level is necessary. The traditional resistive hydrogen sensors based on the Pd alloys are very difficult to realize such an extremely low detection limit. To achieve a detection limit at the ppb level and also ensure good stability, a MEMS hydrogen sensor was designed in a suspended Wheatstone bridge structure, with all four resistive arms defined on a sputtered Pd-Au alloy thin film. For the Wheatstone bridge sensor, absolute response (Ra) and relative response (Rs) are defined to describe the sensitivity of the sensor, and the effect of annealing temperature on baseline drift is investigated using the baseline zero drift parameter (DBZD). By testing the sensors across a hydrogen concentration range of 20 ppb to 3 v/v%, the optimal annealing temperature (250 °C) and operating temperature (60 °C) were identified. Under these conditions, the sensor exhibited a detection limit as low as 20 ppb with a power consumption of only 4.6 mW. At the same time, the response and recovery times of the sensor were 6 and 19 s, respectively, toward 3 v/v% hydrogen. After testing over a 100-day period, Ra fluctuated only 0.0026%, indicating that the hydrogen sensor had good long-term stability for low-concentration detection. More results also showed that the sensor has good repeatability, selectivity, and humidity resistance. With the wide measurement range (20 ppb to 3 v/v%), the sensor has the potential to meet hydrogen detection requirements in multiple scenarios.
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