Optical Transitions Research Articles

Methyl Methacrylate Copolymer with Pendant Thioxanthenone Groups as Active Layer for Resistive Memory Devices.

An electro-active copolymer of methyl methacrylate and 2-((4-acroylpiperazine-1-yl)methyl)-9H-thioxanthene-9-one (poly(MMA-co-ThS)) was synthesized by radical polymerization. The copolymer has good solubility in most organic solvents, thermal stability up to 282 °C and excellent ability to form thin films on silicon wafers. Poly(MMA-co-ThS) films exhibited an electrochemical and electrochromic activity resulting in the formation of long-lived radical anion states of pendant thioxanthone groups inside the film. These states exhibit optical transitions in the visible region as a broad optical absorption band, 500<λ<900 nm (1.38<Wopt(ThS)<2.48 eV) with a maximum at λmax=675 nm (1.84 eV). Using temperature measurements of the current-voltage characteristics of p-Si(100)/poly(MMA-co-ThS)/Al devices, it was shown that the charge transport in the film occurs by a multiphonon mechanism, which is quantitatively described by the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps. The value of the optical transition energy of the trap, determined by the Nasyrov-Gritsenko model, Wopt=1.8 eV, is in a good agreement with Wopt(ThS), confirming the nature of the traps as 9H-thioxanthen-9-one structures. The n++Si(100)/poly(MMA-co-ThS)/Al memory device exhibited a memristive effect (reversible ON/OFF switching of the device) with an initial "forming" cycle followed by repetitive memory cycles characterized by bipolar switching.

Unveiling the Mechanism of Plasmon Photocatalysis via Multiquantum Vibrational Excitation.

Plasmon photocatalysis reactions are thought to occur through vibrationally activated reactants, driven by nonthermal energy transfer from plasmon-induced hot carriers. However, a detailed quantum-state-level understanding and quantification of the activation have been lacking. Using anti-Stokes surface-enhanced Raman scattering (SERS) spectroscopy, we mapped the vibrational population distributions of reactants on plasmon-excited nanostructures. Our results reveal a highly nonthermal distribution with an anomalously enhanced population of multiquantum excited states (v ≥ 2). The shape of the distribution and its dependence on local field intensity and excitation wavelength cannot be explained by photothermal heating or vibronic optical transitions of the metal-molecule complex. Instead, it can be modeled by hot electron-molecule energy transfer mediated by the transient negative ions, establishing direct links among nonthermal reactant activation, plasmon-induced hot electrons, and negative ion resonances. Moreover, the presence of multiquantum excited reactants, which are far more reactive than those in the ground state or first excited state, presents opportunities for vibrationally controlling chemical selectivities.

Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber.

The long-wave infrared (LWIR) interband cascade detector with type-II superlattices (T2SLs) and a gallium-free ("Ga-free") InAs/InAsSb (x = 0.39) absorber was characterized by photoluminescence (PL) and spectral response (SR) methods. Heterostructures were grown by molecular beam epitaxy (MBE) on a GaAs substrate (001) orientation. The crystallographic quality was confirmed by high-resolution X-Ray diffraction (HRXRD). Two independent methods, combined with theoretical calculations, were able to determine the transitions between the superlattice minibands. Moreover, transitions from the trap states were determined. Studies of the PL intensity as a function of the excitation laser power allowed the identification of optical transitions. The determined effective energy gap (Eg) of the tested absorber layer was 116 meV at 300 K. The transition from the first light hole miniband to the first electron miniband was red-shifted by 76 meV. The detected defects' energy states were constant versus temperature. Their values were 85 meV and 112 meV, respectively. Moreover, two additional transitions from acceptor levels in cryogenic temperature were determined by being shifted from blue to Eg by 6 meV and 16 meV, respectively.

Rare Earth‐Diamond Hybrid Structures for Optical Quantum Technologies

AbstractDiamond containing nitrogen‐vacancy centers (NV−) is one of the most investigated materials for quantum technologies, because of this system's exceptional spin properties. Although the NV− optical transition is very bright, it suffers from spectral diffusion and weak zero‐phonon line, and is in the visible range. This limits integration into quantum photonic structures and interfacing with optical fiber networks. In contrast, rare earth (RE) ions exhibit extremely narrow and stable optical transitions, including erbium's 1.5 µm telecom wavelength. Combining RE with NV− properties through short‐range interactions is however challenging as RE do not readily enter the diamond lattice. In this work, a thin‐film‐based architecture in which RE and NV− centers can interact while preserving their unique properties is introduced. Thin films of Er3+:Y2O3 are grown by chemical vapor deposition on diamond substrates with well‐crystallized and highly textured structures. An extensive spectroscopic study of Er3+ transitions at room and low temperatures further reveals that photoluminescence spectra and decays are close to bulk materials. It is also shown that Y2O3 thin film deposition has no detrimental effects on NV− optical and spin properties. RE thin films deposited on diamond can thus be suitable for building hybrid materials for new functionalities in quantum sensing, communication, and processing.

Atomic Transition Probabilities for Ultraviolet and Optical Lines of Tm ii * *Based on observations made with the NASA/ESA Hubble Space Telescope, obtained at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc. under NASA contract NAS5-26555 (program GO-15657). This paper also includes data gathered with the 6.5 m Magellan Telescopes

We report new branching fraction measurements for 224 ultraviolet and optical transitions of Tm ii. These transitions range in wavelength (wavenumber) from 2350 to 6417 Å (42,532–15,579 cm−1) and originate in 13 odd-parity and 24 even-parity upper levels. Thirty-five of the 37 levels, accounting for 213 of the 224 transitions, are studied for the first time. Branching fractions are determined for two levels studied previously for comparison to earlier results. The levels studied for the first time are high lying, ranging in energy from 35,753 to 54,989 cm−1. The branching fractions are determined from emission spectra from two different high-resolution spectrometers. These are combined with radiative lifetimes reported in an earlier study to produce a set of transition probabilities and log(gf) values with accuracy ranging from 5% to 30%. Comparison is made to experimental and theoretical transition probabilities from the literature where such data exist. These new log(gf) values are used to derive an abundance from one previously unused Tm ii line in the UV spectrum of the r-process-enhanced metal-poor star HD 222925, and this abundance is consistent with previous determinations based on other Tm ii lines.

One-pot synthesis and chiroptical activity of single Au-atom doped AuAg28 clusters protected by water-soluble chiral monothiol N‑acetyl‑(S)‑penicillamine (S-NAP)

Physicochemical properties of atomically precise metal clusters can be modulated by incorporating different metal atoms. In this article, successful one-pot synthesis of single Au-atom doped chiral AuAg28 clusters protected by water-soluble N‑acetyl‑(S)‑penicillamine (=S-NAP) is reported. The reduction of Ag and Au ions at 0 °C in the presence of S-NAP and triphenylphosphine (TPP) using tetramethylammonium borohydride (TMAB) is crucial. Importantly, upon doping of an Au atom to the monometallic Ag29 cluster, which improves the cluster stability, the chiroptical activity or maximum anisotropy factor of the bimetallic AuAg28 cluster is enhanced as compared to that of the monometallic species, which can be due to an increase in the rotatory strength that is probably brought about by the increased contribution of optical transition associated with helically-arranged surface shell layers. Such chiroptical behaviors suggest that the Au dopant position in the bimetallic cluster is not fluxional but rigid. Then the present results will help design some heteroatom-doped silver clusters with excellent chiroptical properties.

Synthesis, characterization and photoelectrochemical performance of Bi2Fe4O9 thin films

Mullite-type Bi2Fe4O9 has been little explored in thin film form as a photoanode for photoelectrochemical water splitting. In this study, Bi2Fe4O9 thin films have been prepared using the sol-gel technique from a simple precursor solution based on the corresponding metal salts, acetic acid, and polyvinyl alcohol. The films were deposited by dip-coating onto fluorine-doped tin oxide substrates and dried at 350 °C, repeating the dipping-drying cycle six times, and finally sintered at 600 °C. The films were characterized by GIXRD, revealing the formation of the material in its orthorhombic phase. Raman spectroscopy showed the Ag and B1g vibrational modes, validating the formation of the bismuth iron oxide. UV–Vis transmittance measurements revealed that the material exhibits two optical transitions: a direct band gap of 2.86 eV and an indirect band gap of 1.98 eV. FESEM micrographs and AFM images showed a uniform nanostructured surface morphology. The photoelectrochemical properties of the Bi2Fe4O9 films were studied using cyclic voltammetry and chronoamperometry with front side illumination, demonstrating the stability of the material in aqueous media and the generation of photocurrent in the presence of H2O2. Furthermore, results from intensity-modulated photocurrent spectroscopy (IMPS) revealed that the photocurrent is limited by both bulk and surface recombination and a short hole diffusion length.

End Cap Effect on Solution-Processable Deep Blue Lasing Materials with Low-Amplified Spontaneous Emission Thresholds.

Organic lasers have attracted increasing attention owing to their superior characteristics such as lightweight, low-cost manufacturing, high mechanical flexibility, and high emission-wavelength tunability. Recent breakthroughs include electrically pumped organic laser diodes and an electrically driven organic laser, integrated with an organic light-emitting diode pumping. However, the availability of efficient deep blue organic laser chromophores remains limited. In this study, we develop two novel rigid oligophenylenes, end-capped with carbazole and phenylcarbazole groups, to demonstrate exceptional optical and amplified spontaneous emission (ASE) properties. These oligophenylenes are not only solution processable but also exhibit remarkably high solution photoluminescence quantum yields (PLQYs) of 90% and high radiative rates of 1.35 × 109 s-1 in the deep blue range. Our theoretical calculations confirm that the carbazole and phenylcarbazole end groups play a pivotal role in enhancing the optical transitions of the oligophenylene laser chromophores, thereby elevating their emission oscillator strengths. Remarkably, these materials demonstrate low solid-state ASE threshold values of 1.0 and 1.5 μJ/cm2 (at 431 and 418 nm, respectively). To the best of our knowledge, these ASE thresholds represent the lowest reported at these specific ASE wavelengths in the literature, regardless of whether they are solution-processed or thermally evaporated films. Furthermore, they exhibit excellent thermal and photostability, low triplet quantum yields, as well as negligible overlap of excited-state absorption within the ASE emission region, making them excellent candidates for a new class of deep blue materials for organic lasers. By integrating insights from theoretical calculations and experimental validation, our study provides a comprehensive understanding of the design principles behind these high-performing organic laser chromophores, paving the way for the development of advanced organic lasers with enhanced performance characteristics.

Isolation of individual Er quantum emitters in anatase TiO2 on Si photonics

Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er3+) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for quantum networks it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. In this work, we demonstrate the optical isolation of single Er3+ ions in CMOS-compatible titanium dioxide (TiO2) thin films monolithically integrated on a silicon-on-insulator photonics platform. Our results demonstrate an initial step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er3+ doped thin films.

Tuning optical excitations of graphene quantum dots through selective nitrogen doping

Our research has revealed that the nitrogen doping configuration has a significant impact on the absorption properties and band gap of nitrogen doped graphene quantum dots (NGQDs). By analyzing the composition and character of optical transitions, we have observed that nitrogen doping causes a redistribution of oscillator strength between significant peaks and the emergence of new optical features. These changes lead to broken molecular orbital degeneracies, optical peak splitting, and activation of dark states in the visible to near-infrared (NIR) region. These findings shed light on the mechanisms that govern alterations in the spectral properties of NGQDs within the visible and near-infra red (NIR) absorption bands. Furthermore, selective manipulation of optoelectronic properties via distinct N-doping patterns could pave the way for the development of novel optoelectronic nanodevices and functional materials.

Unveiling Novel Direct Bandgap Allotropes of Germanium: A Computational Exploration

Germanium crystallizes in a cubic diamond structure, which restricts its applications in optoelectronics due to its indirect band gap. However, the slight energy difference between the direct and indirect band gaps in germanium presents a promising opportunity to engineer its structure into a direct band gap material, with the hexagonal diamond (lonsdaleite) phase being a notable example. In this study, we conducted an extensive computational search to find germanium allotropes with a direct band gap and low energy using a sensible random structure search approach informed by data-derived interatomic potentials. Among the predicted allotropes, we identified a hexagonal 8H structure with the lowest energy compared to all known germanium allotropes and only 5 meV/atom above the ground state cubic diamond structure. Compared to the cubic diamond phase, which has complete cubicity, the 8H phase consists of 3/4 cubicity and 1/4 hexagonality. This structural motif, coupled with band structure back folding in the hexagonal Brillouin zone, results in a direct band gap of 0.25 eV. Given the prior experimental discovery of 2H and 4H polytypes, the experimental synthesis of the 8H allotrope in germanium is highly feasible. Future research could explore alloying 8H germanium with silicon to optimize the bandgap energy and optical transitions, potentially achieving lifetimes comparable to those of group III-V semiconductors like GaAs.

(Invited) Semiconducting Single-Walled Carbon Nanotubes: Stimulated Emission, Electron Spin, and Beyond

Great strides have been made in the understanding of electronic and optical properties of semiconducting single-walled carbon nanotubes (SWCNTs) in the past two decades. With optical transitions at near-infrared wavelengths, and diameter- and chirality-tunable electronic structures, SWCNTs are promising candidates for near-infrared nanolasers. In this talk, I will discuss our recent exploration of stimulated emission from SWCNTs by coupling them to whispering gallery modes supported by polymer microspheres through a self-assembly process.In contrast to the many exciting developments in the excitonic frontier, electron spins, which are ubiquitous in solid state materials and highly relevant to spintronic and quantum information science, in SWCNTs are relatively less understood. In this talk, I will also discuss our recent study of electron spins in SWCNTs.

(Invited) Silicon Nanocrystals and Electrum Nanoclusters with High Quantum Yield for Light Converting Applications

While QDs are typically made of semiconductors, metals at low dimensions also turn to discrete electronic structure. The characteristic transition size from bulk to nanodot is lower, because Fermi level position is at the band middle, while discretization of levels starts from the band edge. Therefore, only for sizes of a metal entity ~ 1 nm a QD-like behavior manifests.Here we show that metal nanoclusters Au16Ag7 of an electrum alloy (gold-silver) with adamantanethiolate ligands possess PL quantum yield of ~ 70% in a thiol-ene polymer matrix [1]. PL is in NIR range with a large Stokes shift. Due to parity-forbidden transition the PL lifetime is in microseconds. These characteristics are similar to silicon QDs, where optical transition is also partly forbidden. Luminescence from Si QDs (5-10 nm size) may also feature high quantum efficiency when a defect-free core with good surface passivation is prepared. We have demonstrated a new synthesis method, which can reduce precursor cost by an order of magnitude from the established HSQ-based technique [2]. Si QDs prepared in this way have near-unity internal and > 50% external (quantum yield) efficiency with a large Stokes shift. In both nanomaterials the re-absorption is suppressed, which is of value for several applications.One such application is a semi-transparent photovoltaics for glazing in building-integration. It is based on a luminescent solar concentrator concept, where high efficiency and a large Stokes shift are necessary requirements for nanophosphors. In this configuration absorbed solar light is re-emitted and a large fraction of it is guided by total internal reflection to the edges for collection by standard solar cells. As a proof-of-concept we fabricated 20x20 cm2 prototypes, where Si QD-doped polymer layer is sandwiched between glass plates in a triplex geometry. Such “solar windows” feature high transparency (>80%), low haze (<3%), high color rendering index (~ 88) and, at the same time, deliver up to 0.6 W of electrical peak power under one sun [3]. Original measurement techniques were developed to characterize large-area devices [4,5].

(Invited) Optical Excitations and Growth in Layered Organic Metal Halide Semiconductors

Hybrid organic metal halides, such as CH3NH3PbI3, have garnered attention because they are earth-abundant, solution-processable materials that can be used to form solar cells with high power conversion efficiency (>20%). There are significant questions about the unusual electronic properties of this class of materials because of the coupling between excitations and the lattice. We will present our work investigating the optoelectronic properties of layered organic metal halide systems and the relationship to structure and growth conditions. We will discuss the nature of optical excitations in layered compounds of the class R2PbX4 where R is an organic cation and X is a halide. These systems show signatures of unusually strong optical frequency magnetic dipole transitions that can be understood through self-trapped exciton formation. We will then discuss how mechanical strain during growth influences broad photoluminescence in a model layered system based on the large cation ethylammonium (EA) with the structure (EA)2(EA)n-1PbnBr3n+1. In this system the emission is strongly impacted by growth-induced strain in thin films quantified using X-ray scattering. Our results suggest that broad emission, relevant for LEDs, can be tuned in thin films. Recent work on how growth impacts the behavior of low dimensional system will also be presented.

(Invited) Electronic Doping in Two-Dimensional Semiconductors

Quantum-confined semiconductors provide highly tunable optical and electrical properties for a wide variety of emerging applications. Two-dimensional semiconductors possess tunable bandgaps, high charge carrier mobilities, and strong light-matter interactions that can enable applications in photovoltaics, quantum information processing, and spintronics. Electronic doping, the intentional introduction of controlled charge carrier density and type (electrons or holes) is a fundamental enabler for many emerging applications of two-dimensional semiconductors. While electrostatic doping in transistor geometries is useful for certain applications, it is important to develop additional methods based on e.g. molecular redox doping and substitutional atomic doping that can provide tunable Fermi level control in the absence of an applied bias. In this presentation, I will discuss our efforts to develop such doping strategies for a variety of two-dimensional semiconductors. I will discuss how electronic doping modulates opto-electronic properties, including ground-state absorbance, charge transport, and excited-state dynamics in these 2D semiconductors. These studies provide fundamental insights into the degree to which molecular and substitutional doping strategies can modulate Fermi level, charge transport, and excitonic optical transitions in 2D semiconductors.

Lattice Symmetry-Guided Charge Transport and Recombination in Supramolecular Assemblies

Synthetic soft materials mimicking biological structures are promising for many applications in fields such as photovoltaics and photocatalysis. For these applications, a deep understanding of the charge- and energy-transfer mechanisms is required to build more efficient devices. In this work, we investigate self-assembled 2D supramolecular structures using angle-resolved photoluminescence (PL) imaging techniques and decompose the optical transition dipoles in the supramolecular structures. Combining these optical studies with Monte Carlo simulations, we reveal the important role played by lattice symmetry in charge dissociation, transport, and recombination, as well as the exciton spin states. These mechanistic findings have important implications for engineering soft materials towards efficient energy conversion and photocatalytic applications.

(Invited) Mie Resonant Silicon Nanosphere Nanoantenna for Fluorescence Enhancement

A nanoantenna is a device that manipulates light propagation and enhances light-matter interaction at the nanoscale. Integration of an emitter into a nanoantenna capable of increasing local density of photonic states at the emission wavelength results in the enhancement of the spontaneous emission rate (Purcell effect) and modifies the emission spectrum. A nanoantenna can also control the directionality and radiation pattern of an emitter. Traditionally, plasmonic nanoantennas made from gold or silver nanostructures supporting localized surface plasmon resonances had been the main stream of the nanoantenna research. Recently, high refractive index nanoparticles having low-order Mie resonances have been attracting attention as a new type of dielectric nanoantennas. Advantages of a dielectric nanoantenna compared to a plasmonic one are the smaller loss and the possession of magnetic type Mie resonances arising from light-induced displacement current. By properly controlling the overlap of the magnetic and electric multipole resonances, radiation patters of an emitter placed nearby can be tailored with high degree of freedom. Furthermore, magnetic-type Mie resonances can couple with higher-order optical transitions of an emitter such as a magnetic-dipole transition, and thus can enhance and control radiation from otherwise weak forbidden transitions.Recently, we have succeeded in producing perfectly spherical nanoparticles of crystalline silicon (Si) in 100-300 nm in diameters. These Si nanospheres exhibit the electric and magnetic multipole resonances at the optical frequency [1]. In this presentation, we first show scattering and absorption properties of the Mie resonant Si nanospheres. Especially, we show that solutions of size-purified Si nanospheres exhibit vivid structural color and the solutions can be used as structural color inks. We then show that the solutions can preserve helicity of incoming circularly-polarized light and can enhance local chiral fields around nanospheres [2, 3]. This property can be used to improve the sensitivity of enantiomer-selective chiral molecular sensing. We then show some examples of enhanced light-matter interaction by Si nanoparticles. These include enhancement of magnetic dipole transitions of an emitter by magnetic-type Mie resonances of Si nanospheres (magnetic Purcell effect) [4, 5], enhancement of excitation and emission processes of in-plane dipoles of monolayer transition metal dichalcogenides (TMDC) [6], and enhancement of a spin forbidden singlet-to-triplet absorption transition of a molecule by Si nanodisks [7, 8].

First-Principles study of the electronic Structure, Optical, and thermoelectric properties of novel WSeX (X=S, Te) Chalcogenides: For energy harvesting application

Excellent thermal stability and tunable optoelectronic features are twouniquecharacteristicsof ternary chalcogenides. The first −principles investigations were carried out to look into the intricate interactions between the optical, thermoelectric, and electronicfeatures of novel ternary chalcogenides. The stability of these studied materials was confirmed by the computed formation energy values. There is a strong correlation between the formation energy and the ionicity of W-X bonds, indicating that materials with lower formation energy are connected to a higher number of ionic bonds. The valence band maximum and conduction band minimum of both WSeS and WSeTe materials are located at the Γ-point, which confirms they are direct band gap semiconductors. The heavier element Te is incorporated, making the electronicstructure of WSeTe more complex than that of WSeS. The ε1(ω) was negative at higher photon energy, which is associated with these materials’ response being closer to that of a metallic in the specified energy range. WSeS and WSeTe exhibit peaks in ε2(ω) representing the highest densities of electronic states that can take part in optical transitions. As fewer states become accessible for the high-energy transitions that make these materials ideal for use in optoelectronics and photovoltaics, as confirmed by the n(ω) decreases as a result of a drop in absorption. The behavior of charge carriers and their interactions with the lattices leads to an almost linear increase in electrical thermal conductivity with temperature. Because electron–phonon scattering, the main type of scattering, increases with temperature, electrical conductivity in these materials often decreases as temperature rises.

New Insights in Luminescence and Quenching Mechanisms of Ag2S Nanocrystals through Temperature-Dependent Spectroscopy.

Bright near-infrared-emitting Ag2S nanocrystals (NCs) are used for in vivo temperature sensing relying on a reversible variation in intensity and photoluminescence lifetime within the physiological temperature range. Here, to gain insights into the luminescence and quenching mechanisms, we investigated the temperature-dependent luminescence of Ag2S NCs from 300 to 10 K. Interestingly, both emission and lifetime measurements reveal similar and strong thermal quenching from 200 to 300 K, indicating an intrinsic quenching process that limits the photoluminescence quantum yield at room temperature, even for perfectly passivated NCs. The low thermal quenching temperature, broadband emission, and multiexponential microsecond decay behavior suggest the optical transition involves strong lattice relaxation, which is consistent with the recombination of a Ag+-trapped hole with a delocalized conduction band electron. Our findings offer valuable insights for understanding the optical properties of Ag2S NCs and the thermal quenching mechanism underlying their temperature-sensing capabilities.

Spectral Hole-Burning Studies of a Mononuclear Eu(III) Complex Reveal Narrow Optical Linewidths of the 5D0→7F0 Transition and Seconds Long Nuclear Spin Lifetimes.

Coordination complexes of rare-earth ions (REI) show optical transitions with narrow linewidths enabling the creation of coherent light-matter interfaces for quantum information processing (QIP) applications. Among the REI-based complexes, Eu(III) complexes showing the 5D0→7F0 transition are of interest for QIP applications due to the narrow linewidths associated with the transition. Herein, we report on the synthesis, structure, and optical properties of a novel Eu(III) complex and its Gd(III) analogue composed of 2,9-bis(pyrazol-1-yl)-1,10-phenanthroline (dpphen) and three nitrate (NO3) ligands. The Eu(III) complex-[Eu(dpphen)(NO3)3]-showed sensitized metal-centred emission (5D0→7FJ; J=0,1,2,3, 4, 5, or 6) in the visible region, upon irradiation of the ligand-centred band at 369 nm, with the 5D0→7F0 transition centred at 580.9 nm. Spectral hole-burning (SHB) studies of the complex with stoichiometric Eu(III) concentration revealed a narrow homogeneous linewidth (Γh) of 1.55 MHz corresponding to a 0.205 μs long optical coherence lifetime (T2opt). Remarkably, long nuclear spin lifetimes (T1spin) of up to 41 s have been observed for the complex. The narrow optical linewidths and long T1spin lifetimes obtained for the Eu(III) complex showcase the utility of Eu(III) complexes as tuneable, following molecular engineering principles, coherent light-matter interfaces for QIP applications.