Optical Stark Effect Research Articles

Ultrafast generation of pseudo-magnetic field for valley excitons in WSe₂ monolayers.

The valley pseudospin is a degree of freedom that emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2). The capability to manipulate it, in analogy to the control of spin in spintronics, can open up exciting opportunities. Here, we demonstrate that an ultrafast and ultrahigh valley pseudo-magnetic field can be generated by using circularly polarized femtosecond pulses to selectively control the valley degree of freedom in monolayer MX2. Using ultrafast pump-probe spectroscopy, we observed a pure and valley-selective optical Stark effect in WSe2 monolayers from the nonresonant pump, resulting in an energy splitting of more than 10 milli-electron volts between the K and K' valley exciton transitions. Our study opens up the possibility to coherently manipulate the valley polarization for quantum information applications.

The permanent electric dipole moment of nickel oxide, NiO

The optical Stark effect in numerous low-J branch features in the Ω=0+ ← X3Σ0- band near 19040cm−1 of nickel oxide, NiO, has been recorded and analyzed. The permanent electric dipole moment, μ→el, for the X3Σ0-(v=0) and [19.04] Ω=0+ states were determined to be 4.43±0.04 D and 1.85±0.16D, respectively. The measured dipole moments of NiO are compared to those from theoretical predictions and the trend across the 3d-metal monoxide series discussed. The field-free spectrum was analyzed to produce an improved set of fine structure parameters for the [19.04] Ω=0+ state.

Multiphoton absorption controlled by the resonance optical stark effect in crystals

Probabilities of n-photon transitions between upper valence and lower conduction bands under conditions in which the frequency of light is in resonance with the frequency of adjacent transition between two conduction bands are calculated for arbitrary integer n. The case of n = 3 is investigated in detail. Effects caused by transformation of the electronic band spectrum due to the resonance optical Stark effect are analyzed. It is shown that the rate of photogeneration of electron-hole pairs as a function of radiation intensity j is nonmonotonic and includes areas of extremely fast rise and/or decrease due to the appearance of new van Hove singularities in the modified band spectrum.

Multiphoton generation of electron–hole pairs accompanying the resonance optical Stark effect

General expressions obtained earlier for nonlinear photogeneration rates of electron–hole pairs (EHPs) under conditions of n-photon–one-photon resonance on adjacent interband transitions are used to analyze manifestations of the resonance optical Stark effect in the case n=4. Because of the appearance of new Van Hove singularities in the electronic band spectrum reconstructed in the field of a strong electromagnetic wave, the multiphoton EHP-generation rate W(4) is a nonmonotonic function of radiation intensity j and includes a region of extremely rapid growth, in which a small change of j causes W(4) to increase by several orders of magnitude.

Manipulation of ferromagnets via the spin-selective optical Stark effect

We investigate the non-resonant all-optical switching of magnetization. We treat the inverse Faraday effect (IFE) theoretically in terms of the spin-selective optical Stark effect for linearly or circularly polarized light. In the dilute magnetic semiconductors (Ga,Mn)As, strong laser pulses below the band gap induce effective magnetic fields of several teslas in a direction which depends on the magnetization and light wave vectors. Our theory demonstrates that the polarized light catalyzes the angular momentum transfer between lattice and the magnetization.

Carbon Nanotubes: Quantum Dot–Carbon Nanotube Hybrid Phototransistor with an Enhanced Optical Stark Effect (Adv. Funct. Mater. 29/2013)

Carbon Nanotubes: Quantum Dot–Carbon Nanotube Hybrid Phototransistor with an Enhanced Optical Stark Effect (Adv. Funct. Mater. 29/2013)

Optical signals of spin switching using the optical Stark effect in a Mn-doped quantum dot

The optically induced spin dynamics of a single Mn atom embedded into a single semiconductor quantum dot can be strongly influenced by using the optical Stark effect. The exchange interaction gives rise to simultaneous spin flips between the quantum dot electron and Mn. In the time domain, these flips correspond to exchange induced Rabi oscillations, which are typically off-resonant. By applying a detuned laser pulse, the states involved in the flipping can be brought into resonance by means of the optical Stark effect increasing the amplitude of the Rabi oscillations to one. In this paper, we study theoretically how this spin dynamics can be monitored in time-resolved spectroscopy. In the spectrum, the exchange interaction leads to a splitting of the exciton line into six lines, each corresponding to one of the six Mn spin states. The dynamical behavior of the Mn spin is reflected by the strength of the individual lines as a function of time. When an off-resonant optical pulse is applied, the spectral positions of the lines shift, but still the flipping dynamics is visible.

Quantum Dot–Carbon Nanotube Hybrid Phototransistor with an Enhanced Optical Stark Effect

AbstractEnhanced carrier–carrier interactions in hybrid nanostructures exhibit exceptional electronic and optoelectronic properties. Carbon nanotubes demonstrate excellent switching behavior with high on/off ratio and high mobility but do not show photoresponse in the visible range, whereas quantum dots (QDs) shows excellent optical response in various optical ranges which can be tuned with diameter. Here, a simple and effective way to develop hybrid phototransistors with extraordinary optoelectronic properties is presented by decorating semiconducting QDs on the surface of a single‐walled carbon nanotube (SWCNT). This hybrid structure demonstrates clear negative photoresponse and optical switching behavior, which could be further tuned by applying external gate bias in the future. A clear type conversion of SWCNT transistor from p‐type to n‐type caused by a charge transfer from attached QDs to CNT is demonstrated. Moreover, this hybrid structure also demonstrates an enhancement in ‘optical Stark effect’ without applying any external electric field. Charged SWCNT surface plays a key role behind the enhancement of optical Stark effect in QDs. The carrier dynamics of the QD and CNT heterostructures system highlights the potential application opportunity of the quantum dot systems, which can be adaptable to the current technologies.

435 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

We report a passively mode-locked vertical external cavity surface emitting laser (VECSEL) producing 400 fs pulses with 4.35 kW peak power. The average output power was 3.3 W and the VECSEL had a repetition rate of 1.67 GHz at a center wavelength of 1013 nm. A near-antiresonant, substrate-removed, 10 quantum well (QW) gain structure designed to enable femtosecond pulse operation is used. A SESAM which uses fast carrier recombination at the semiconductor surface and the optical Stark effect enables passive mode-locking. When 1 W of the VECSEL output is launched into a 2 m long photonic crystal fiber (PCF) with a 2.2 µm core, a supercontinuum spanning 175 nm, with average power 0.5 W is produced.

Optical control of the spin state of two Mn atoms in a quantum dot

We report on the optical spectroscopy of the spin of two magnetic atoms (Mn) embedded in an individual quantum dot interacting with a single electron, a single exciton, or a single trion. As a result of their interaction to a common entity, the Mn spins become correlated. The dynamics of this process is probed by time-resolved spectroscopy, which permits us to determine an optical orientation time in the range of a few tens of nanoseconds. In addition, we show that the energy of the collective spin states of the two Mn atoms can be tuned through the optical Stark effect induced by a resonant laser field.

Experimental methods of post-growth-tuning of the excitonic fine structure splitting in semiconductor quantum dots.

Deterministic sources of polarization entangled photon pairs on demand are considered as important building blocks for quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a sufficiently small excitonic fine structure splitting (FSS) can be used as triggered, on-chip sources of polarization entangled photon pairs. As-grown QDs usually do not have the required values of the FSS, making the availability of post-growth tuning techniques highly desired. This article reviews the effect of different post-growth treatments and external fields on the FSS such as thermal annealing, magnetic fields, the optical Stark effect, electric fields, and anisotropic stress. As a consequence of the tuning of the FSS, for some tuning techniques a rotation of the polarization of the emitted light is observed. The joint modification of polarization orientation and FSS can be described by an anticrossing of the bright excitonic states.

Spin switching in a Mn-doped quantum dot using the optical Stark effect

In a single quantum dot doped with a single Mn atom, ultrafast optical control can be used to coherently manipulate the Mn spin state. Here we show that due to the optical Stark effect induced by a detuned laser pulse the Mn spin can be efficiently flipped by one during the action of the pulse. We discuss the influence of different pulse envelopes on the flipping process. We then show how this flipping mechanism can be used in a switching protocol to address all Mn spin states selectively and point out the advantage of exploiting the optical Stark effect compared to previously proposed methods.

Optical field modulation on the group delay of chiral tunneling in graphene

The influences of optical fields on the group delay of chiral tunneling in graphene are investigated in real time using the finite-difference time-domain method. The group delay of tunneling electrons irradiated by an optical field is significantly different from that observed in traditional quantum tunneling. We found that when the barrier width increases, the group delay becomes constant for the reflected wave packet, but increases linearly for the transmitted wave packet. This peculiar tunneling effect can be attributed to current leakage in a time-dependent barrier generated via the optical Stark effect.

The influence of gate voltage on electron transport in the graphene field-effect transistor under strong laser field

The influence of gate voltage on electron transport in the graphene field-effect transistor under strong laser field is studied by using the finite-difference time-domain method. The perfect tunneling in graphene can be strongly suppressed by the strong laser field induced optical stark effect. This suppression depends not only on the laser field but also on the width and the height of the gate voltage. The electron transport through a non-square barrier is investigated. We find that a barrier with a small incline has little effect on the electron transport, but if the barrier has a large incline, the tunneling probability changes remarkably.

Numerical simulation of optical Stark effect saturable absorbers in mode-locked femtosecond VECSELs using a modified two-level atom model

The interaction of an optical pulse with a quantum well saturable absorber is simulated using a semi-classical two-level-atom model which has been modified to approximate spectral hole burning in the carrier distribution. Saturable absorption behaviour is examined in the limit where pulse duration approaches the carrier-carrier scattering time. For long pulses bleaching dominates the absorber response but as the pulse duration approaches the carrier-carrier scattering timescale an additional pulse shaping mechanism becomes active, allowing the absorber to continue to shorten pulses beyond the limit set by bleaching. Examination of the spectral and temporal absorption profiles suggests that intense pulses experience additional pulse shortening from the optical Stark effect.

Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 278 and 787 GHz

We report a repetition frequency tunable, passively mode-locked vertical-external-cavity surface-emitting semiconductor laser (VECSEL) with continuous repetition frequency tuning between 2.78 and 7.87 GHz using mechanical tuning of the laser cavity length. The laser emits near-transform-limited, sub-500-fs pulses over almost an octave tuning range between 2.78 and 5 GHz. At repetition rates above 6 GHz the pulse duration increases to ~2.5 ps. Over the entire tuning range the laser emits an average output power of 40 ± 5 mW in a fundamental transverse mode. The change in pulse duration highlights a change in the dominant modelocking mechanism which forms the pulses. At high repetition frequencies the pulse duration is set by the saturable absorber recovery time. At low repetition frequencies the fluence and peak intensity on the SESAM increases to a point where the fast pulse shaping mechanisms of the optical Stark effect and carrier thermalization dominate the pulse shortening.

Optical Stark Effect and Dressed Exciton States in a Mn-Doped CdTe Quantum Dot

We report on the observation of spin-dependent optically dressed states and the optical Stark effect on an individual Mn spin in a semiconductor quantum dot. The vacuum-to-exciton or the exciton-to-biexciton transitions in a Mn-doped quantum dot are optically dressed by a strong laser field, and the resulting spectral signature is measured in photoluminescence. We demonstrate that the energy of any spin state of a Mn atom can be independently tuned by using the optical Stark effect induced by a control laser. High resolution spectroscopy reveals a power-, polarization-, and detuning-dependent Autler-Townes splitting of each optical transition of the Mn-doped quantum dot. This experiment demonstrates an optical resonant control of the exciton-Mn system.

False estimates of stimulated Raman pumping efficiency caused by the optical Stark effect

One technique for measuring the fraction of molecules pumped to the excited state in stimulated Raman pumping (SRP) is to record the depletion of molecules in the lower state by resonance enhanced multiphoton ionization (REMPI). The presence of electric fields on the order of 10(7) V/cm arising from the pulsed SRP laser beams is sufficient to shift the line position of the REMPI transition to such an extent that the estimate of the pumping efficiency is overestimated unless this shift is accounted for.

Temperature dependence of active photonic band gap in bragg-spaced quantum wells

A novel all-optical polarization switch of active photonic band gap structure based on non-resonant optical Stark effect bragg-spaced quantum wells was investigated and it could be compatible with the optical communication system. The theory is based on InGaAsP/InP Bragg-spaced quantum wells (BSQWs). Mainly through the design of the InGaAsP well layer component and InP barrier thickness to make the quantum-period cycle meet the bragg condition and the bragg frequency is equal to re-hole exciton resonance frequency. When a spectrally narrow control pulse is tuned within the forbidden gap, such BSQWs have been shown to exhibit large optical nonlinearities and ps recovery times, which can form T hz switch. However, the exciton binding energy of InGaAsP will be automatically separate at room temperature, so the effect of all-optical polarization switching of active photonic band gap bragg structure quantum wells can only be studied at low temperature. By a large number of experiments, we tested part of the material parameters of BSQWs in the temperature range 10-300K. On this basis, the InGaAsP and InP refractive index changes with wavelength, InP thermal expansion coefficient are studied and a relationship equation is established. Experimental results show that the bragg reflection spectra with temperature mainly is effected by InP refractive index changes with temperature. Our theoretical study and experiment are an instruction as a reference in the designs and experiments of future practical optical switches.

Optically monitoring electron spin relaxation in a single quantum dot using a spin memory device

We demonstrate optical single-electron spin initialization, storage, and readout in a single self-assembled InGaAs quantum dot using a spin memory device. Single-electron spin relaxation is monitored over time scales exceeding $\ensuremath{\ge}30\text{ }\ensuremath{\mu}\text{s}$, defined only by extrinsic experimental parameters such as the optical detection efficiency. The selective generation of a single electron in the dot is performed by resonant optical excitation and subsequent partial exciton ionization; the hole is removed from the dot while the electron remains stored. When subject to a magnetic field applied in Faraday geometry, we show how the spin of the electron can be prepared with a well-defined spin projection relative to the light propagation direction simply by controlling the voltage applied to the gate electrode. The spin is stored then in the dot before being read out using an optical implementation of spin to charge conversion, whereby the spin projection of the electron is mapped onto a more robust variable, the charge state of the dot. After spin to charge conversion, we show how the charge occupancy can be repeatedly and nonperturbatively measured by pumping a luminescence recycling transition. The approach is shown to provide a readout signal ${10}^{4}$ times stronger per spin when compared to previous methods. In combination with spin manipulation using the optical Stark effect or microwaves, our approach provides an ideal basis for probing spin coherence in single self-assembled quantum dots over long-time scales and the development of methods for coherent spin control.