Optical Properties Of Silicon Quantum Dots Research Articles

Bright silicon quantum dot synthesis and LED design: insights into size–ligand–property relationships from slow- and fast-band engineering

Abstract Multicolor, bright silicon quantum dots (SiQDs)—SiQDs with photoluminescence in a range of colors and quantum yields (PLQYs) of >90%—are promising heavy-metal-free light sources for full-color displays, lighting, and biomedical imaging. Colloidal SiQDs can be used to manufacture devices via printing and roll-to-roll processing. Furthermore, the in vivo use of biodegradable SiQDs and Si nanomaterials, for imaging cancer cells and as drug delivery systems, has been demonstrated. However, a large body of research demonstrates that the photoluminescence (PL) wavelength and PLQY of colloidal SiQDs are dependent not only on the SiQD particle size but also on the methods and/or procedures and chemical reagents used to synthesize them. This is because SiQDs are quite sensitive to both the intrinsic properties of Si and external factors. These intrinsic and external factors can be respectively linked to different PL mechanisms: the quantum confinement effect, which produces a slow-decaying “S”-band PL signal, and surface ligand effects, corresponding to fast-decaying “F”-band PL. This review focuses on mechanistic insights into the relationships linking the structures, ligands, and optical properties of SiQDs. Synthesis methods and the application performance of bright multicolor colloidal SiQDs, based on excellent state-of-the-art experimental and theoretical studies, are also reviewed.

The luminescence mechanism of ligand-induced interface states in silicon quantum dots.

Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield. However, the complete physical picture of Si-QD luminescence is not yet clear and needs to be studied in depth. In this work, which considers the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands were calculated based on first principles calculations. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QD interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size of the Si-QD increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining a high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. This study deepens the understanding of the photoluminescence mechanism of Si-QDs, and provides a direction for both future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.

Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films

Silicon quantum dots (QDs) embedded in hydrogenated amorphous Si-rich silicon carbide (α-SiC:H) thin films were realized by plasma-enhanced chemical vapor deposition process and post-annealing. Fluorescence spectroscopy was used to characterize the room-temperature photoluminescence properties. X-ray photoelectron spectroscopy was used to analyze the element compositions and bonding configurations. Ultraviolet visible spectroscopy, Raman scattering, and high-resolution transmission electron microscopy were used to display the microstructural properties. Photoluminescence measurements reveal that there are six emission sub-bands, which behave in different ways. The peak wavelengths of sub-bands P1, P2, P3, and P6 are pinned at about 425.0, 437.3, 465.0, and 591.0 nm, respectively. Other two sub-bands, P4 is red-shifted from 494.6 to 512.4 nm and P5 from 570.2 to 587.8 nm with temperature increasing from 600 to 900 °C. But then are both blue-shifted, P4 to 500.2 nm and P5 to 573.8 nm from 900 to 1200 °C. The X-ray photoelectron spectroscopy analysis shows that the samples are in Si-rich nature, Si-O and Si-N bonds consumed some silicon atoms. The structure characterization displays that a separation between silicon phase and SiC phase happened; amorphous and crystalline silicon QDs synthesized with increasing the annealing temperature. P1, P2, P3, and P6 sub-bands are explained in terms of defect-related emission, while P4 and P5 sub-bands are explained in terms of quantum confinement effect. A correlation between the peak wavelength shift, as well as the integral intensity of the spectrum and crystallization of silicon QDs is supposed. These results help clarify the probable luminescence mechanisms and provide the possibility to optimize the optical properties of silicon QDs in Si-rich α-SiC: H materials.

Optimal surface functionalization of silicon quantum dots

Surface functionalization is a critical step for Si nanocrystals being used as biological probes and sensors. Using density-functional tight-binding calculations, we systematically investigate the optical properties of silicon quantum dots (SiQDs) with various termination groups, including H, CH(3), NH(2), SH, and OH. Our calculations reveal that capping SiQDs with alkyl group (-Si-C-) induces minimal changes in the optical spectra, while covering the surface with NH(2), SH, and OH results in evident changes compared to hydrogenated SiQDs. The structural deformations and electronic property changes due to surface passivation were shown to be responsible for the above-described features. Interestingly, we find that the optical properties of SiQDs can be controlled by varying the S coverage on the surface. This tuning effect may have important implications in device fabrications.