Optical Linewidth Research Articles

Lattice dielectric properties of rutile TiO2 : First-principles anharmonic self-consistent phonon study

We calculate the lattice dielectric function of strongly anharmonic rutile ${\mathrm{TiO}}_{2}$ from ab initio anharmonic lattice dynamics methods. Since an accurate calculation of the $\mathrm{\ensuremath{\Gamma}}$ point phonons is essential for determining optical properties, we employ the modified self-consistent approach, including third-order anharmonicity as well as fourth-order anharmonicity. The resulting optical phonon frequencies and linewidths at the $\mathrm{\ensuremath{\Gamma}}$ point agree much better with experimental measurements than those from a perturbative approach. We show that the four-phonon scattering process contributes as much as the third-order anharmonic term to phonon linewidths of some phonon modes. Furthermore, incorporating the frequency dependence of phonon linewidth reveals that experimentally known but unidentified peaks of the dielectric function are due to the two-phonon process. This work emphasizes the importance of the self-consistent approach in predicting the optical properties of highly anharmonic materials.

Anharmonic phonon behavior via irreducible derivatives: Self-consistent perturbation theory and molecular dynamics

Cubic phonon interactions are now regularly computed from first principles, and the quartic interactions have begun to receive more attention. Given this realistic anharmonic vibrational Hamiltonian, the classical phonon Green's function can be precisely measured using molecular dynamics, which can then be used to rigorously assess the range of validity for self-consistent diagrammatic approaches in the classical limit. Here we use the bundled irreducible derivative approach to efficiently and precisely compute the cubic and quartic phonon interactions of CaF$_2$, systematically obtaining the vibrational Hamiltonian purely in terms of irreducible derivatives. non frequency shifts and linewidths, We demonstrate that the 4-phonon sunset diagram has an important contribution to the optical phonon linewidths beyond $T=500$ K. Reasonable results are obtained even at $T=900$ K when performing self-consistency using the 4-phonon loop diagram and evaluating the 3-phonon bubble and 4-phonon sunset diagrams post self-consistency. Further improvements are obtained by performing quasiparticle perturbation theory, where both the 4-phonon loop and the real part of the 3-phonon bubble are employed during self-consistency. Our irreducible derivative approach to self-consistent perturbation theory is a robust tool for studying anharmonic phonons in both the quantum and classical regimes.

SUPER VII. morphology and kinematics of H α emission in AGN host galaxies at cosmic noon using SINFONI

ABSTRACTWe present spatially resolved H α properties of 21 type 1 AGN host galaxies at z ∼ 2 derived from the SUPER survey. These targets were observed with the adaptive optics capabilities of the SINFONI spectrograph, a near-infrared integral field spectrograph, that provided a median spatial resolution of 0.3 arcsec (∼2 kpc). We model the H α emission line profile in each pixel to investigate whether it traces gas in the narrow line region or if it is associated with star formation. To do this, we first investigate the presence of resolved H α emission after subtracting the AGN PSF. We find extended H α emission in 16 out of the 21 type 1 AGN host galaxies (76 per cent). Based on the BPT diagnostics, optical line flux ratios and line widths (FWHM), we show that the H α emission in five galaxies is ionized by the AGN (30 per cent), in four galaxies by star formation (25 per cent) and for the rest (45 per cent), the ionization source is unconstrained. Two galaxies show extended H α FWHM >600 km s−1, which is interpreted as a part of an AGN-driven outflow. Morphological and kinematic maps of H α emission in targets with sufficient signal-to-noise ratio suggest the presence of rotationally supported discs in six galaxies and possible presence of companions in four galaxies. In two galaxies, we find an anticorrelation between the locations of extended H α emission and [O iii]-based ionized outflows, indicating possible negative feedback at play. However, in the majority of galaxies, we do not find evidence of outflows impacting H α-based star formation.

10 kW peak power, single-frequency 1553 nm nanosecond pulsed fiber laser for time-of-flight LIDAR

A 10 kW peak power, 10 ns duration and 6 kHz repetition rate fiber laser system at 1553 nm based on an Er/Yb co-doped large-mode-area fiber, is demonstrated experimentally. The seed laser is provided by a DFB laser switched with a semiconductor optical amplifier. Its optical spectrum, linewidth, and beam quality are measured and discussed. This pulsed laser with short pulse duration and high peak power could be a candidate for the laser source of time-of-flight light detection and ranging (LIDAR).

Transverse magneto-optical behavior of nanoporous ferromagnetic film based on anodic aluminum oxide/aluminum template and its sensing application.

The transverse magneto-optical Kerr effect (TMOKE) has attracted widespread scientific interest because of its potential applications in biosensor technology, data storage, optical isolation, and telecommunications. More conventional architectures, including prism-based metal/magnetic multilayers and nanoarrays that integrate plasmonic and magnetic materials, are commonly used to amplify TMOKE through the high-quality propagation of the surface plasmon resonance optical mode. However, the main disadvantages of these architectures are their large ohmic losses and radiation damping, resulting in a large optical spectrum linewidth, which hinders the sensing performance. Here, we use a theoretical approach to show that it is possible to employ a low-loss Fabry-Perot optical mode on a magneto-optical platform for TMOKE signal and gaseous sensing enhancement by means of a single CoFeB ferromagnetic film directly overlayed on an already industrial anodic aluminum oxide/aluminum template. The proposed strategy can therefore potentially be exploited for high-precision and low-loss magneto-optical sensors.

Dual-wavelength DFB Laser Array Based on Sidewall Grating and Lateral Modulation of the Grating Coupling Coefficient

A monolithic dual-wavelength DFB laser array based on sidewall gratings and a novel modulation of the grating coupling coefficient is proposed and demonstrated experimentally. The grating coupling coefficient distribution along the cavity is modulated by changing the alignment between the gratings on the two sidewalls. The frequency difference between the two lasing modes can be modulated by changing the cavity length and grating recess depth. A series of microwave signals in the range of 50 GHz to 59 GHz is observed after beating the two optical lines in a photodetector. The measured optical linewidths are 250 kHz and 850 kHz when the cavity length is 1200 μm and 1000 μm, respectively.

Mixed Sulfur/Selenium Anions Weaken Electron-Vibrational Interaction in Cu2ZnSn(S,Se)4 Photoabsorber

Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar absorbers have attracted intensive investigations for next-generation photovoltaic applications. Here, by using ab initio static and molecular dynamics simulations, we investigated the anion compositional dependence of electron-vibration interaction in CZTSSe materials. We found that the conduction band fluctuates more than the valence band, and as a result, the band gap variation is more sensitive to the change of the former, which can be understood in terms of p-d hybridization in the valence bands. Electron-phonon coupling is smaller in CZTSSe alloy compared to pure S- or Se-containing structures, as evidenced by the smaller fluctuation of excitation energy, and can be attributed to the weaker structural dynamics of the metal-anion bond. Small electron-phonon coupling strength may lead to better charge transport in these materials. We also elucidated the interplay between disordered structures and S/Se stoichiometry through analysis of optical line width. The results highlight the importance of anion composition engineering and provide new insights into the rational design of high-performing kesterite absorbers for solar cells.

Spectrally stable nitrogen-vacancy centers in diamond formed by carbon implantation into thin microstructures

The nitrogen-vacancy center (NV) in diamond, with its exceptional spin coherence and convenience in optical spin initialization and readout, is increasingly used both as a quantum sensor and as a building block for quantum networks. Employing photonic structures for maximizing the photon collection efficiency in these applications typically leads to broadened optical linewidths for the emitters, which are commonly created via nitrogen ion implantation. With studies showing that only native nitrogen atoms contribute to optically coherent NVs, a natural conclusion is to either avoid implantation completely or substitute nitrogen implantation by an alternative approach to vacancy creation. Here, we demonstrate that implantation of carbon ions yields a comparable density of NVs as implantation of nitrogen ions and that it results in NV populations with narrow optical linewidths and low charge-noise levels even in thin diamond microstructures. We measure a median NV linewidth of 150 MHz for structures thinner than 5 μm, with no trend of increasing linewidths down to the thinnest measured structure of 1.9 μm. We propose a modified NV creation procedure in which the implantation is carried out after instead of before the diamond fabrication processes and confirm our results in multiple samples implanted with different ion energies and fluences.

DFB laser array based on four phase-shifted sampled Bragg gratings with precise wavelength control.

A four-laser array based on sampled Bragg grating distributed feedback (DFB) lasers in which each sampled period contains four phase-shift sections is proposed, fabricated, and experimentally demonstrated. The wavelength spacing between adjacent lasers is accurately controlled to 0.8 nm ± 0.026 nm and the lasers have single mode suppression ratios larger than 50 dB. Using an integrated semiconductor optical amplifier, the output power can reach 33 mW and the optical linewidth of the DFB lasers can be as narrow as 64 kHz. This laser array uses a ridge waveguide with sidewall gratings and needs only one metalorganic vapor-phase epitaxy (MOVPE) step and one III-V material etching process, simplifying the whole device fabrication process, and meeting the requirements of dense wavelength division multiplexing systems.

Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures. Critical for carrier and exciton transport is the material quality and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy of CVD grown MoSe2-WSe2 lateral heterostructures, encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal optical transition linewidths similar to high quality exfoliated monolayers, while PL imaging experiments uncover the effective excitonic diffusion length of both materials. The typical extent of the covalently bonded MoSe2-WSe2 heterojunctions is 3 nm measured by scanning transmission electron microscopy (STEM). Tip-enhanced, sub-wavelength optical spectroscopy mapping shows the high quality of the heterojunction which acts as an excitonic diode resulting in unidirectional exciton transfer from WSe2 to MoSe2.

Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity.

External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper, a hybrid-integrated external cavity mode-locked laser working at 1064 nm is demonstrated, a wavelength beneficial for optical coherence tomography or Raman spectroscopy applications. Additionally, optical injection locking is demonstrated, showing an improvement in the optical linewidth, and an increased stability of the comb spectrum.

Ultralow Noise and Timing Jitter Semiconductor Quantum-Dot Passively Mode-Locked Laser for Terabit/s Optical Networks

Diode optical frequency comb lasers are promising compact solutions to generate high-speed optical pulses for applications in high spectral efficiency wavelength division multiplexing transmission with advanced modulation formats. In this paper, an InAs/InP quantum dot (QDot) C-band single-section passively mode-locked laser (MLL) based broadband optical frequency comb source with a free spectral range of 28.4 GHz is presented. The device exhibits less than 1.5 MHz optical linewidth (phase noise) over 56 channels and 2.1 fs pulse-to-pulse timing jitter with a central wavelength of 1550 nm. Using this comb, we demonstrate an aggregate data transmission capacity of 12.5 Terabit/s over 100 km of standard single mode fiber by employing dual-polarization with 16 QAM modulation format. This investigation shows the viability for semiconductor QDot MLLs to be used as low-cost optical source in Terabit/s or higher optical networks.

Battery‐Operated Mid‐Infrared Diode Laser Frequency Combs

AbstractMid‐wave infrared (MIR, 3–5 µm) optical frequency combs (OFC) are of critical importance for spectroscopy of fundamental molecular transitions in space and terrestrial applications. Although in this band OFCs can be obtained via supercontinuum or difference frequency generation using optical pumping schemes, unprecedented source miniaturization, and monolithic design are unique to electrically‐pumped semiconductor laser structures. To date, high‐brightness OFC generation in this region has been demonstrated in quantum‐ and interband cascade lasers (QCL/ICL), yet with sub‐optimal spectral properties. Here, an MIR quantum well diode laser (QWDL) OFC is shown, whose excellent spectral uniformity, narrow optical linewidths, and milliwatt optical power are obtained at a fraction of a watt of power consumption. The continuously tunable source offers ≈1 THz of optical span centered at 3.04 µm, and a repetition rate of 10 GHz. As a proof‐of‐principle, a directly‐battery‐operated MIR dual‐comb source is shown with almost 0.5 THz of optical coverage accessible in the electrical domain in microseconds. These results indicate the high suitability of QWDL OFCs for future chip‐based real‐time sensing systems in the mid‐infrared.

Er-doped anatase TiO2 thin films on LaAlO3 (001) for quantum interconnects (QuICs)

Rare-earth ions (REIs) doped into solid-state crystal hosts offer an attractive platform for realizing quantum interconnects that can function as quantum memories and quantum repeaters. The 4f valence electrons of REIs are shielded by 5s and 5p electrons and undergo highly coherent transitions even when embedded in host crystals. In particular, Er3+ has an optical transition in the telecom band that is suitable for low-loss communication. Recently, REIs in thin film systems have gained interest due to potential advantages in providing a flexible host crystal environment, enabling scalable on-chip integration with other quantum devices. Here, we investigate the structural and optical properties of Er-doped anatase TiO2 thin films on LaAlO3 (001) substrates. By choosing a system with minimal lattice mismatch and adjusting Er-dopant concentration, we achieve optical inhomogeneous linewidths of 5 GHz at 4.5 K. We show that 9 nm-thick buffer and capping layers can reduce the linewidth by more than 40%, suggesting a pathway to further narrowing linewidths in this system. We also identify that Er3+ ions mainly incorporate into substitutional Ti4+ sites with non-polar D2d symmetry, which makes Er dopants insensitive to the first order to local electric fields from impurities and is desirable for coherence properties of Er3+ spins.

Enhancing Spin Coherence in Optically Addressable Molecular Qubits through Host-Matrix Control

Optically addressable spins are a promising platform for quantum information science due to their combination of a long-lived qubit with a spin-optical interface for external qubit control and readout. The ability to chemically synthesize such systems—to generate optically addressable molecular spins—offers a modular qubit architecture which can be transported across different environments and atomistically tailored for targeted applications through bottom-up design and synthesis. Here, we demonstrate how the spin coherence in such optically addressable molecular qubits can be controlled through engineering their host environment. By inserting chromium (IV)-based molecular qubits into a nonisostructural host matrix, we generate noise-insensitive clock transitions, through a transverse zero-field splitting, that are not present when using an isostructural host. This host-matrix engineering leads to spin-coherence times of more than 10 μs for optically addressable molecular spin qubits in a nuclear and electron-spin-rich environment. We model the dependence of spin coherence on transverse zero-field splitting from first principles and experimentally verify the theoretical predictions with four distinct molecular systems. Finally, we explore how to further enhance optical-spin interfaces in molecular qubits by investigating the key parameters of optical linewidth and spin-lattice relaxation time. Our results demonstrate the ability to test qubit structure-function relationships through a tunable molecular platform and highlight opportunities for using molecular qubits for nanoscale quantum sensing in noisy environments.Received 18 March 2022Revised 16 June 2022Accepted 1 July 2022DOI:https://doi.org/10.1103/PhysRevX.12.031028Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasChemical Physics & Physical ChemistryQuantum engineeringQuantum information processingSpintronicsQuantum InformationCondensed Matter, Materials & Applied Physics

Multi-wavelength injection locked semiconductor comb laser

Quantum dot lasers on silicon have gained significant interest over the past decade due to their great potential as an on-chip silicon photonic light source. Here, we demonstrate multi-wavelength injection locking of InAs/GaAs quantum dot Fabry–Perot (FP) lasers both on GaAs and silicon substrates by optical self-injection via an external cavity. The number of locked laser modes can be adjusted from a single peak to multiple peaks by tuning wavelength dependent phase and mode spacing of back-injected light through a Lyot filter. The multi-wavelength injection locked laser modes exhibit average optical linewidth of ∼ 20 kHz , which are narrowed by approximately three orders of magnitude from their free-running condition. Furthermore, multi-wavelength self-injection locking via an external cavity exhibits flat-top optical spectral properties with approximately 30 stably locked channels under stable operation over time, where the frequency detuning is less than 700 MHz within 40 min. Particularly, FP lasers by direct epitaxial growth on silicon substrates are self-injection locked as a flat-top comb source with tunable free spectral range from approximately 25 to 700 GHz. The reported results emphasize the great potential of multi-wavelength injection locked lasers as tunable on-chip multi-wavelength light sources.

BASS. XXIV. The BASS DR2 Spectroscopic Line Measurements and AGN Demographics

We present the second catalog and data release of optical spectral line measurements and active galactic nucleus (AGN) demographics of the BAT AGN Spectroscopic Survey, which focuses on the Swift-BAT hard X-ray detected AGNs. We use spectra from dedicated campaigns and publicly available archives to investigate spectral properties of most of the AGNs listed in the 70 month Swift-BAT all-sky catalog; specifically, 743 of the 746 unbeamed and unlensed AGNs (99.6%). We find a good correspondence between the optical emission line widths and the hydrogen column density distributions using the X-ray spectra, with a clear dichotomy of AGN types for N H = 1022 cm−2. Based on optical emission-line diagnostics, we show that 48%–75% of BAT AGNs are classified as Seyfert, depending on the choice of emission lines used in the diagnostics. The fraction of objects with upper limits on line emission varies from 6% to 20%. Roughly 4% of the BAT AGNs have lines too weak to be placed on the most commonly used diagnostic diagram, [O iii]λ5007/Hβ versus [N ii]λ6584/Hα, despite the high signal-to-noise ratio of their spectra. This value increases to 35% in the [O iii]λ5007/[O ii]λ3727 diagram, owing to difficulties in line detection. Compared to optically selected narrow-line AGNs in the Sloan Digital Sky Survey, the BAT narrow-line AGNs have a higher rate of reddening/extinction, with Hα/Hβ > 5 (∼36%), indicating that hard X-ray selection more effectively detects obscured AGNs from the underlying AGN population. Finally, we present a subpopulation of AGNs that feature complex broad lines (34%, 250/743) or double-peaked narrow emission lines (2%, 17/743).

A new measurement method for the optical feedback coupling factor and linewidth enhancement factor based on self-mixing interferometry

In this study, a practical and straightforward method is presented for measuring the optical feedback coefficient C and the linewidth enhancement factor α by means of the mode-hopping phenomena in the self-mixing interferometric system. A theoretical analytical model, in combination with the laser energy transition area of the phase jumping points and the C-parameter, is described deeply. In the experiment, a laser self-mixing vibration sensing system is fabricated to further verify this proposed theoretical model and simultaneously obtain the geometric area SR,F under different C values. From the actual measurements, the C-parameter is exactly measured by tracking the change of the geometric area SR,F, over the range of 1.0-4.5. Then, the α-factor of this self-mixing sensor is obtained as 2.41±0.15 with an accuracy of 6%. In addition, the absolute and relative error of the experimental results are less than 0.14 and 7.43%, respectively. In a word, the measured results agree well with the simulated values, of which validates the good applicability and practicability of this measurement method.

Optical linewidth of soliton microcombs

Soliton microcombs provide a versatile platform for realizing fundamental studies and technological applications. To be utilized as frequency rulers for precision metrology, soliton microcombs must display broadband phase coherence, a parameter characterized by the optical phase or frequency noise of the comb lines and their corresponding optical linewidths. Here, we analyse the optical phase-noise dynamics in soliton microcombs generated in silicon nitride high-Q microresonators and show that, because of the Raman self-frequency shift or dispersive-wave recoil, the Lorentzian linewidth of some of the comb lines can, surprisingly, be narrower than that of the pump laser. This work elucidates information about the physical limits in phase coherence of soliton microcombs and illustrates a new strategy for the generation of spectrally coherent light on chip.

Photon echo, spectral hole burning, and optically detected magnetic resonance inYb3+171:LiNbO3bulk crystal and waveguides

Recent progress in the realization of high-quality optical resonators and waveguides along with the possibility to incorporate rare-earth ions, make lithium niobate a promising material to build integrated platforms for quantum information processing. $^{171}\mathrm{Yb}^{3+}$ is a particularly attractive system because it can show long coherence lifetimes at zero magnetic field thanks to transitions insensitive to magnetic field fluctuations. In this paper, we investigate the optical and spin properties of $^{171}\mathrm{Yb}^{3+}$ ions in ${\mathrm{LiNbO}}_{3}$ bulk crystals as well as implanted waveguides. Using hole-burning spectroscopy and optically detected magnetic resonance, we studied ground and excited state hyperfine structures and probed optical and spin spectral holes. Importantly, the hole linewidths suggest that part of the ions in the waveguides are in a similar environment as in the bulk sample. We furthermore characterized spin population relaxation and coherence lifetimes of $^{171}\mathrm{Yb}^{3+}$ ions in the bulk crystal at temperatures between 50 mK and 9 K. At low temperatures, ${T}_{2}$ up to 9.5 $\ensuremath{\mu}\mathrm{s}$ (34 kHz homogeneous linewidth) and spin relaxation rates as long as $\ensuremath{\approx}100$ ms were measured. Our results show that $^{171}\mathrm{Yb}^{3+}$:$\mathrm{Li}\mathrm{Nb}{\mathrm{O}}_{3}$ is a system that exhibits narrow optical homogeneous linewidths over a 50 GHz bandwidth together with an electron spin degree of freedom. This is of interest for a variety of applications in integrated quantum photonics such as quantum memories or quantum processors.