Fermi level pinning refers to a situation where the band bending in a semiconductor contacting a metal is essentially independent of the metal even for large variation in the work function of the metal. It was found that a similar situation sometimes results for a semiconductor contacting liquid electrolyte solutions containing redox couples having very different electrochemical potentials. Recently, workers in the field of semiconductor photoelectrochemistry have emphasized a limiting case of the model of the semiconductor/liquid interface where the drop across the semiconductor depends on applied potential; at equilibrium with the solution, the band bending is generally regarded as varying with changes in the solution potential by virtue of changes in the redox couple or simply changing the ratio of oxidized and reduced material. Fermi level pinning results in semiconductor/liquid interfaces which can be viewed as analogous to a Schottky barrier photocell in series with an electrochemical cell in that the extent to which a given redox process can be driven uphill is independent of the potential of the redox couple.n-GaAs, p-GaAs, p-GaAs, and p-Si are semiconductors that exhibit Fermi level pinning in liquid electrolyte solutions (CH/sub 3/CN/(n-Bu/sub 4/N)ClO/sub 4/) of redox reagents. Fermi level pinning has the disadvantagemore » in practical terms of limiting photovoltage in optical energy conversion applications, but such a phenomenon allows the use of a very wide range of solution couples. Since Fermi level pinning results from surface states, changes in the surface brought about by deliberate surface chemistry may change the surface states and hence the photovoltage in solid-state and liquid-junction solar devices.« less