Operational Amplifier Research Articles

Design and Construct of a Portable Solar Mobile Charger

Abstract: The state of incessant power failure accompanied with the increase in pump price of petroleum in India, solar energy becomes the most sought after energy source. Solar chargers are simple, portable and ready to use devices which can be used by anyone especially in remote areas. Going solar can solve the problems of dependence on fuels and the prevalent energy crisis. This project aims to make a portable solar charger which can be used on the go. A portable solar mobile phone charger is simply a power electronic device that converts solar radiation into electrical current for the purpose of charging the batteries of mobile phones. This charger is made by converting, controlling and conditioning the flow of electrical energy from source to load according to the requirements. of the load; this technology is called power electronics. An external adjustable voltage regulator is used to obtain the desired constant voltage. A zener diode switches on to ensure charging is cut off at the saturation point. Two 3.7V lithium ion batteries are used as backup; an operational amplifier works here as a comparator to signify when backup is fully charged. Ultimately, 11V and 160mA is supplied by the panel under full sunlight. This charger has an output voltage of 5V and an average of 800mA current to charge a mobile phone, this system charges a phone fully between 4-5hours and it has a capacity of 4800mAh. This device charges all mobile phones by all manufacturers using a universal serial bus connector. It is the only viable solution to charging mobile phones as it is portable, light-weight and does not cause pollution

Design of a Compact 2-6 GHz High-Efficiency and High-Gain GaN Power Amplifier.

In this paper, a novel wideband power amplifier (PA) operating in the 2-6 GHz frequency range is presented. The proposed PA design utilizes a combination technique consisting of a distributed equalization technique, multiplexing the power supply network and matching network technique, an LR dissipative structure, and an RC stability network technique to achieve significant bandwidth while maintaining superior gain flatness, high efficiency, high gain, and compact size. For verification, a three-stage PA using the combination technique is designed and implemented in a 0.25 μm GaN high-electron-mobility transistor (HEMT) process. The fabricated prototype demonstrates a saturated output power of 4 W, a power gain of 21 dB, a gain flatness of ±0.6 dB, a power-added efficiency of 39-46%, and a fractional bandwidth of 100% under the operating conditions of drain voltage 28 V (continuous wave) and gate voltage -2.6 V. Moreover, the chip occupies a compact size of only 2.51 mm × 1.97 mm.

Chip-Based Electronic System for Quantum Key Distribution.

Quantum Key Distribution (QKD) has garnered significant attention due to its unconditional security based on the fundamental principles of quantum mechanics. While QKD has been demonstrated by various groups and commercial QKD products are available, the development of a fully chip-based QKD system, aimed at reducing costs, size, and power consumption, remains a significant technological challenge. Most researchers focus on the optical aspects, leaving the integration of the electronic components largely unexplored. In this paper, we present the design of a fully integrated electrical control chip for QKD applications. The chip, fabricated using 28 nm CMOS technology, comprises five main modules: an ARM processor for digital signal processing, delay cells for timing synchronization, ADC for sampling analog signals from monitors, OPAMP for signal amplification, and DAC for generating the required voltage for phase or intensity modulators. According to the simulations, the minimum delay is 11ps, the open-loop gain of the operational amplifier is 86.2 dB, the sampling rate of the ADC reaches 50 MHz, and the DAC achieves a high rate of 100 MHz. To the best of our knowledge, this marks the first design and evaluation of a fully integrated driver chip for QKD, holding the potential to significantly enhance QKD system performance. Thus, we believe our work could inspire future investigations toward the development of more efficient and reliable QKD systems.

Semiparametric evaluation of first‐passage distribution for step‐stress accelerated degradation tests

AbstractIn reliability engineering, different types of accelerated degradation tests have been used to obtain reliability information for evaluating highly reliable or expensive products. The step‐stress accelerated degradation test (SSADT) is one of the useful experimental schemes that can be used to save the resources of an experiment. Motivated by the SSADT data for operational amplifiers collected in Xi'an Microelectronic Technology Institute, in which the underlying degradation mechanism of the operational amplifiers is unknown, we propose a semiparametric approach for SSADT data analysis that does not require strict distributional assumptions. Specifically, the empirical saddlepoint approximation method is proposed to estimate the items' lifetime (first‐passage time) distribution at both stress levels included and not included in the SSADT experiment. Monte Carlo simulation studies are used to evaluate the performance and illustrate the advantages of the proposed approach. Finally, the proposed semiparametric approach is applied to analyze the motivating data set.

АНАЛИЗ АНАЛОГОВЫХ АКТИВНЫХ ЭЛЕКТРОННЫХ СХЕМ НА ОСНОВЕ МЕТОДОВ МОДЕЛИРОВАНИЯ

Various classical methods are often used to analyze analog electronic circuits. It is proposed to use matrix methods of mathematical modeling, which allow using computational tools to obtain fast re-sults with acceptable accuracy. As an example, a scheme of an active second-order electronic filter based on an operational amplifier is proposed

Literature Review, Analysis of the Performance of Operational Amplifier Applied in Controlling Systems: Summary, Analysis, and Overview

As part of modern electronic technology, the operational amplifier is widely used in signal conditioning, sensor interface circuits, controller design, and actuator drives of automatic control systems. Improvement: In accurate controlling systems, factors such as linearity, noise performance, and stability directly influence the accuracy and speed of response of the whole system. Thus, it is vitally important for Improving the overall performance of automated control systems to learn and improve the performance of the operational amplifier. With the development of Industry 4.0 and intelligent manufacturing, modern controlling strategies such as adaptive control and intelligent controlling demand much more from the operational amplifier.

Design and Implementation of Electronically Controllable Sinusoidal Oscillators Using Commercially Available Current-Feedback Operational Amplifiers with Externally Accessible Compensation Node z

This paper presents the structure and operational principles of high-frequency electronically controllable sinusoidal oscillators employing current-feedback operational amplifiers (CFOAs) with externally accessible compensation node [Formula: see text] as active components. The resonant circuits in the oscillators are connected to the terminal [Formula: see text], and for them in the selective network varactor diodes or varicaps as the variable capacitances are utilized, which are controlled by external DC voltage. Based on an analysis of the proposed circuit configurations, analytical expressions for the characteristic equation in a steady-state mode of operation and formulas for the basic electrical parameters have been obtained. In order to verify the functionality of the proposed electronic circuits and the effectiveness of the derived analytical expressions, an experimental and simulation study of sample electronic circuits with commercially available integrated circuit CFOAs AD844 in the frequency range up to about 10[Formula: see text]MHz is performed. The obtained results for the studied electronic circuits confirm the theoretical studies and hypotheses, and the comparative analysis shows that the maximum value for the relative error does not exceed 10%, which is acceptable considering the tolerances of the technological parameters of the used passive and active elements.

Circuit Simulation of the Analog Computer and Proportional Controlled DC Motor Based on Op Amp

Circuit Simulation of the Analog Computer and Proportional Controlled DC Motor Based on Op Amp

Design of Capacitive Power Transfer System with Small Coupling Capacitance for Wireless Power Transfer

Wireless power transfer systems play an important role in the application of modern power supply technology. Wireless charging has been widely used in portable devices such as smartphones, laptops, and even some medical devices. Higher system efficiency can be achieved while reducing costs. This article describes the design of a capacitive power transfer (CPT) system using the Class-E amplifier method. When the capacitance of the coupling plate is small, the operation of Class-E amplifiers under Zero-Voltage-Switching (ZVS) conditions is very sensitive to their circuit parameters. By adding an additional capacitor to the Class-E amplifier, the coupling capacitance can be increased, resulting in better circuit performance. The high efficiency of the Class-E amplifier is verified by simulation and experimental results.

Robust low-noise 795-nm single-frequency fiber laser with continuous frequency tuning

This study presents a highly efficient and low-noise all-fiber single-frequency (SF) 795-nm laser system realized using a simple and robust single-pass frequency-doubling configuration. The foundation of the system is a 1590-nm erbium-doped fiber amplifier operating in a master oscillator power amplifier configuration seeded by a distributed feedback semiconductor laser at 1590.52 nm. The main amplifier exhibits an exceptional amplification efficiency of 30.5 %. By utilizing a periodically poled lithium niobate waveguide, the 795-nm laser is frequency-doubled with an output power reaching 2.3 W, corresponding to an optical efficiency of 44 % of the fundamental laser. Crucial to its application in precision measurements and quantum technologies, the SF 795-nm laser exhibits a relative intensity noise close to −150 dBc/Hz in the frequency range of 0.1 to 10 MHz. Additionally, a continuous frequency-tuning range of 11.7 GHz is achieved by modulating the current with a 2.5-mA 1-Hz triangular wave. Notably, this is the first report on an all-fiber SF 795-nm laser system.

Utilizing layout effects for analog logic locking

While numerous obfuscation techniques are available for securing digital assets in the digital domain, there has been a notable lack of focus on protecting intellectual property (IP) in the analog domain. This is primarily due to the relatively smaller footprint of analog components within an integrated circuit (IC), with the majority of the surface dedicated to digital elements. However, despite their smaller nature, analog components are highly valuable IP and warrant effective protection. In this paper, we present a groundbreaking method for safeguarding analog IP by harnessing layout-based effects that are typically considered undesirable in IC design. Specifically, we exploit the impact of length of oxide diffusion and well proximity effect on transistors to fine-tune critical parameters such as transconductance (gm\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$g_{m}$$\\end{document}) and threshold voltage (Vth\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$V_{th}$$\\end{document}). These parameters remain concealed behind key inputs, akin to the logic locking approach employed in digital ICs. Our research explores the application of layout-based effects in two commercial CMOS technologies, namely a 28 nm and a 65 nm node. To demonstrate the efficacy of our proposed technique, we implement it for locking an operational transconductance amplifier. Extensive simulations are performed, evaluating the obfuscation strength by applying a large number of key sets (over 50,000 and 300,000). The results exhibit a significant degradation in performance metrics, such as open-loop gain (up to 130 dB), phase margin (up to 50∘\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^\\circ $$\\end{document}), 3 dB bandwidth (approximately 2.5 MHz), and power consumption (around 1 mW) when incorrect keys are employed. Our findings highlight the advantages of our approach as well as the associated overhead.

A Defects Classification Algorithm for the Hybrid OBT–IDDQ Fault Diagnosis Technique in Analog CMOS Integrated Circuits

In this paper, a robust fault detection methodology for complex analog CMOS integrated filters is presented. It is based on combining the two types of testing methodologies, Oscillation-Based Testing (OBT) and IDDQ testing, i.e., measuring of the power-supply current ([Formula: see text]). The proposed methodology is applied to the Bi-quad Sallen–Key band-pass (BP) filter cell with relatively complex, two-stage, class-AB-output, operational amplifier (opamp) topology. The filter is custom designed targeting the 180-nm CMOS technology. Hundreds of time-domain simulations and analyses of the circuit output signal are performed in order to obtain the fault dictionary. The presented results show that the proposed hybrid OBT–IDDQ methodology is significantly more efficient in the defects coverage than any of the particular test methodologies alone. Subsequently, the specific algorithm for the defects classification is proposed. Based on the classification, certain degree of diagnosis of the individual defect, or a group of defects, can be achieved.

Precision photodetector for information and measurement systems and diagnostic tools for medical purposes

The development of a new generation of diagnostic tools and medical information systems requires the use of the latest advances in the field of primary converters of physical quantities. These include photodetector devices (PDDs) made on the basis of photodiodes. The direction of this research is the identification and analysis of FPU structures that have increased accuracy in recording light fluxes. Identification of the structure of the PDA, in which errors are eliminated due to temperature and time drifts of input currents and bias voltages of the operational amplifiers included in the PDA. The structure of the original FPU, which provides increased accuracy of registration of light fluxes, is presented and analyzed. It is advisable to use the presented FPU in the development of medical diagnostic devices and information-measuring systems. A special place in their use is occupied by various kinds of optical analyzers for medical purposes, for example, a tooth color analyzer, systems for studying microcirculation of the blood flow, magnetotherapy units that use optical methods for recording the patient’s breathing process, etc. FPU will be of interest to scientists and engineers involved in the development of medical diagnostic equipment and information measurement systems.

A Novel Approach for Realizing Loop-Filter in Low-Distortion Noise-Coupled ΣΔ Modulators

This paper presents an innovative general structure for a single-loop Sigma-Delta ([Formula: see text]) modulator that combines low-distortion and noise-coupled techniques to achieve high-resolution for low-power applications. The low-distortion technique adjusts the signal transfer function of the proposed structure to unity, while the noise-coupled technique enhances the order of quantization noise-shaping at the modulator output. These techniques were incorporated into the design to increase the modulator order without requiring additional operational amplifiers during its circuit implementation, resulting in a low-power modulator compared to similar structures. To reduce the number of required amplifiers, a second-order infinite impulse response (IIR) filter was used in the modulator loop filter, in place of two integrators. To assess the proposed structure’s performance, a third-order modulator sample was implemented and simulated for speech recognition applications, specifically, digital hearing aids, using 180[Formula: see text]nm complementary metal oxide semiconductor (CMOS) technology. The results indicate that for a third structure with a sampling rate of 64, an input sine signal of −6[Formula: see text]dBFS and a sampling frequency of 2.56[Formula: see text]MHz, the signal to noise plus distortion (SNDR) was 81.9[Formula: see text]dB, and the dynamic range (DR) was 88[Formula: see text]dB for a 20[Formula: see text]KHz bandwidth. The modulator’s power consumption was 126.9[Formula: see text][Formula: see text]W. Circuit and system-level simulations demonstrate the effectiveness of the proposed method.

A 0.3 V OTA with Enhanced CMRR and High Robustness to PVT Variations

In this paper, we present a 0.3 V body-driven operational transconductance amplifier (OTA) that exploits a biasing approach based on the use of a replica loop with gain. An auxiliary amplifier is exploited both in the current mirror load of the first stage of the OTA and in the replica loop in order to achieve super-diode behavior, resulting in low mirror gain error, which enhances CMRR, and robust biasing. Common-mode feedforward, provided by the replica loop, further enhances CMRR. Simulations in a 180 nm CMOS technology show 65 dB gain with 2 kHz unity-gain frequency on a 200 pF load when consuming 9 nW. Very high linearity with a 0.24% THD at 90% full-scale and robustness to PVT variations are also achieved.

Modeling of gas sensor based on zinc oxide thin films by feedback loop using operational amplifier

Nanostructured Zincoxide thin-film is widely used as a sensing material because of its tunable surface microstructure and wide optical bandgap but synthesizing a film with desired value of resistance and reproducibility of film is challenging, particularly by chemical method. In this work, we showed how a ZnO film of arbitrary resistance can be used as a sensor without application of heat using operational amplifier. Zinc oxide thin film was synthesized by using the Sol-gel method (Spin coating) and was characterized by XRD and SEM which revealed wurtzite polycrystalline nature of Zinc oxide film with average grain size 17–25 nm. In this report, we designed a noble electronic circuit capable of detecting analyte gas molecule even if very small change in film resistance occurs due to the influence of gas molecule. In recently available sensors, the quality of the film degrades over time due to repeated heating and cooling, resulting in a reduced lifetime for the sensor. To address this issue and achieve higher sensitivity, as well as to fabricate an affordable, portable, precise, energy-efficient and durable device, this electronic model offers advantages over classical temperature-dependent sensors.

A Compact Model for Carbon Nanotube Field Effect Transistors Incorporating Temperature Effects and Application for Operational Amplifier Design

Semiconducting carbon nanotubes (CNTs), characterized by high carrier mobility and atomic thickness, are considered ideal channel materials for building high-performance and ultimate-scale field-effect transistors for future electronics. Here, we present a data-calibrated compact model of CNT field-effect transistors (CNTFETs) that incorporates temperature effects using the virtual source approach. The proposed model also includes the self-heating effect. Temperature effect was characterized by the influence of temperature on devices, achieved through establishing a temperature-dependent semi-empirical model of carrier mobility and carrier velocity. The proposed model can be easily implemented in a simulator. We designed a two-stage operational amplifier (OPAMP) using the proposed model at 32 nm technology. Compared with other studies, the designed CNTFET-based OPAMP demonstrates lower power consumption, which is beneficial for exploring the biological applications of low-power analog circuits in portable electronic devices. Furthermore, the impact of thermal variations on the design of OPAMP, as per the proposed model, was delineated. Investigations revealed that our circuit maintains a high common mode rejection ratio, which diminishes as the temperature increases and exhibits a moderate gain value that escalates with temperature.

Design and Experimental Analysis of an Operational Amplifier Circuit-Based Mechatronic Semiactive Inerter

A novel mechatronic semi-active inerter (MSAI) by using an operational amplifier (OPA) circuit-based adjustable capacitor (OPA-CC) is proposed in this study to address the realization challenge of fast-responding semi-active inerters. The fast-responding ability, inertance-directly controlled capability, and sensor-less regulation characteristic are distinctive advantages of the proposed MSAI. To implement a pure controlled capacitor and a pure capacitive motor load (the internal resistance of the motor is canceled), two different types of OPA circuits are designed. Tuned inerter damper (TID) and tuned viscous mass damper (TVMD), as two typical MSAI-based configurations, are established and tested. It is found that the proposed MSAI can modify the inertance quickly (in the microsecond time scale) and reliably, and good congruence between theoretical and experimental results is obtained.

The High-Efficiency Optimization Design Method for Two-Stage Miller Compensated Operational Amplifier

The High-Efficiency Optimization Design Method for Two-Stage Miller Compensated Operational Amplifier

Enhancing Preamplifier Design for Acoustic Emission Detection Instrument

With the development of the industry, the safety of pressure vessels is crucial for both production and personnel safety. The application of acoustic emission testing technology as a dynamic non-destructive testing method in the detection of pressure vessels is becoming increasingly prevalent. This paper presents the design of a low-frequency acoustic emission preamplifier with a frequency range of 30KHz to 200KHz and a gain of 20dB. The preamplifier is composed of amplification circuits, power supply circuits, and filtering components. By utilizing the PXR04 series high-sensitivity resonant acoustic emission sensor and Texas Instruments' OPA333 operational amplifier, along with a clever power supply design, effective signal amplification and system stability are ensured. Experimental results validate the correctness of the design, providing a feasible and effective solution for enhancing the performance of acoustic emission testing equipment.