Operation Of Light-emitting Diodes Research Articles

Performance and reliability enhancement of flexible low-temperature polycrystalline silicon thin-film transistors via activation-annealing temperature optimization

The high performance and reliability of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on flexible substrates need to be ensured for the proper operation of advanced flexible organic light-emitting diode (OLED) displays. However, due to the heat-sensitive components of flexible LTPS TFTs, their fabrication process faces challenges in the temperature management of its thermal treatment procedures such as activation annealing, which is an essential step in the in-line fabrication process of LTPS TFTs for activating dopants and reducing silicon lattice-related structural defects. In this work, we investigate the optimization of the activation-annealing process through the modulation of its process temperature. As the activation-annealing temperature was increased from 320 °C to 370 °C, the electrical characteristics and reliability of flexible LTPS TFTs improved owing to a decrease in the gate dielectric/channel interface and bulk channel defects. However, as the temperature was further increased to 420 °C, considerable degradations in device performance and reliability were observed due to a significant increase in the deep-level gate dielectric/channel interface and bulk channel defects. Physical analysis revealed that significant dehydrogenation, in which the breakage of Si−H bonds causes excess Si dangling bonds, occurred at 420 °C. This work shows that a fine temperature optimization of the activation annealing process is a necessary procedure for ensuring highly performant and reliable LTPS TFTs on flexible substrates.

Perovskite Nanocrystals Protected by Hermetically Sealing for Highly Bright and Stable Deep-Blue Light-Emitting Diodes.

Metal-halide perovskite nanocrystals (NCs) have emerged as suitable light-emitting materials for light-emitting diodes (LEDs) and other practical applications. However, LEDs with perovskite NCs undergo environment-induced and ion-migration-induced structural degradation during operation; therefore, novel NC design concepts, such as hermetic sealing of the perovskite NCs, are required. Thus far, viable synthetic conditions to form a robust and hermetic semiconducting shell on perovskite NCs have been rarely reported for LED applications because of the difficulties in the delicate engineering of encapsulation techniques. Herein, a highly bright and durable deep-blue perovskite LED (PeLED) formed by hermetically sealing perovskite NCs with epitaxial ZnS shells is reported. This shell protects the perovskite NCs from the environment, facilitates charge injection/transport, and effectively suppresses interparticle ion migration during the LED operation, resulting in exceptional brightness (2916cd m-2 ) at 451nm and a high external quantum efficiency of 1.32%. Furthermore, even in the unencapsulated state, the LED shows a long operational lifetime (T50 ) of 1192 s (≈20min) in the air. These results demonstrate that the epitaxial and hermetic encapsulation of perovskite NCs is a powerful strategy for fabricating high-performance deep-blue-emitting PeLEDs.

Efficient Room-Temperature Operation of a Quantum Dot Spin-Polarized Light-Emitting Diode under High-Bias Conditions

Spin-polarized light-emitting diodes (spin LEDs) are essential for the optical transfer of carrier-spin information in spin-based electronic circuits. Efficient operation under high-bias conditions is required for high-speed transfer of spin information and strong light emission. However, achieving high-electroluminescence (EL) circular polarization is hampered by electric-field-induced spin relaxation during drift transport in undoped $\mathrm{Ga}\mathrm{As}$ barriers. Herein, we demonstrate the efficient room-temperature operation of a spin LED using ($\mathrm{In},\mathrm{Ga})\mathrm{As}$ quantum dots (QDs) tunnel coupled with a 5-nm-thick $\mathrm{Ga}(\mathrm{N},\mathrm{As})$ quantum well (QW). A high-EL circular polarization of approximately 7% is achieved, even under high-bias conditions, in comparison with the lower value of approximately 3% for the conventional QD spin LED without $\mathrm{Ga}(\mathrm{N},\mathrm{As})$. This is realized by an increase of spin polarization after injection into the QDs by utilizing remote spin filtering of QD electrons via an adjacent tunnel-coupled $\mathrm{Ga}(\mathrm{N},\mathrm{As})$ QW. These results demonstrate that the tunnel-coupled structure of ($\mathrm{In},\mathrm{Ga})\mathrm{As}$ QDs and $\mathrm{Ga}(\mathrm{N},\mathrm{As})$ QW is a promising active layer of spin LEDs for achieving both strong EL emission and high-EL circular polarization at room temperature.

Analysis of the ionic and dielectric properties of perovskites by impedance spectroscopy

For understanding the operation of perovskite solar cells and light-emitting diodes, knowledge of the dielectric properties is indispensable. The dielectric properties of perovskites are frequency dependent due to the presence of moving ions, which complicates the interpretation of impedance spectra. Using Au/CsPbI2Br/Au capacitors with varied layer thickness as a model system, we demonstrate that in the dark, an extended Maxwell circuit consistently describes the impedance data. From the thickness dependence of the resistivities, both the electronic and ionic conductivities are obtained, whereas the combination of electronic and ionic capacitances with the characteristic frequencies for space-charge formation determines the ion diffusion coefficient and ion density. At low frequencies, a slow transient process with a fixed time constant of ∼0.1 s occurs, governed by the electronic conductivity, being independent of illumination strength and sample thickness. As a possible mechanism, we propose the spatial reorganization of ions within the ion accumulation layer at the electrode/perovskite interface.

Unveiling the degraded electron durability in reduced-dimensional perovskites.

The operational stability of reduced-dimensional metal halide perovskites (RD-MHPs) lags far behind the practical requirements for future high-definition displays. Thereinto, the electron durability of RD-MHPs plays a critical role in stable LEDs during continuous operation, however, it still lacks adequate research and a deep understanding. Herein, the electron durability and deterioration mechanism of phenethylammonium (PEA+)-modified RD-MHPs are systematically conducted through an in situ photoelectron spectroscopy technique by implementing tunable electron-beam radiation to simulate device operation. The formation of detrimental metallic lead (Pb0) caused by the reduction of lead ions (Pb2+) is observed along with the decomposition of PEA+ under electron-beam radiation, thereby changing the photophysical properties of PEA+-doped RD-MHPs. These results provide deep insight into the process of how injected electrons affect the performance of PEA+-doped perovskite LEDs, which may also provide potential guidance for designing robust and effective organic spacers for RD-MHPs.

Mid-infrared rainbow light-emitting diodes

We demonstrate a room-temperature all-epitaxial guided-mode resonance light-emitting diode operating in the mid-wave infrared. The device comprises a dielectric waveguide with an AlGaAsSb p−i−n diode core, below a layer of grating-patterned GaSb and above a highly doped, and thus, low index, InAsSb layer. Light emitted from the device active region into propagating modes in the waveguide scatters into free space via the GaSb grating, giving rise to spectrally narrow features that shift with emission angle across much of the mid-wave infrared. For collection angles approaching 0°, we are able to obtain linewidths of ∼2.4 meV across the spectral/angular emission of the LED, corresponding to λ/Δλ∼570. Fine control of emission wavelength can be achieved by tuning the applied current, which causes a redshift of approximately 20 nm due to the thermo-optic effect. The presented device has the potential for use in compact, high bandwidth, and low-cost mid-wave infrared sensing applications requiring spectral discrimination.

Perspective estimation of light emitting diode reliability measures based on multiply accelerated long run stress testing backed up by stochastic diffusion process

Light emitting diodes (LEDs) are currently a key element of many systems. They provide main, informational, safety, support and other functions. Their design, size and low-cost production make them increasingly popular. The relatively long technical life of electronic components is not always easy to prove and properly estimate, and the correlations between luminance, luminous flux intensity and other electrical characteristics of an LED (e.g. voltage) are not usually available. To ensure that their operation is correct and safe, LEDs must have a suitable level of reliability; LEDs are examined in service to detect their degradation and the deterioration of their technical condition. This article is devoted to estimating and demonstrating some LED reliability measures, such as the time during which the LED operation is failure-free and at the required luminance level. Existing research is typically based on short testing periods, one stress factor and more traditional models for analysing recorded data. In contrast, our approach is based on multiply accelerated reliability testing with very long experiment runs supported by degradation modelling using a stochastic diffusion process. Multiple acceleration is provided by intensifying environmental climatic effects (heat exposure) and simultaneously increasing the stress of operating conditions (increased current load). The parameters for degradation models based on stochastic diffusion processes are estimated for the studied LEDs by a specific form of the maximum likelihood estimation (MLE) method, including parameter confidence intervals. Based on the results, a novel correlation between luminance level, luminous flux intensity and voltage magnitude is also determined. The aim is to estimate and demonstrate key LED reliability measures.

All-solution-processed wearable moist-electric generators based on engineered nanocomposites of carbon nanotube and gelatin incorporated with PEDOT: PSS interfacial blocking layer

Moist-electric generators (MEGs), capable of harvesting energy directly from ambient moisture, have been considered as promising and eco-friendly candidates for supplying continuous and stable electricity for self-powered electronics. Using a simple and practical all-solution process in ambient air, we developed wearable MEGs comprising engineered nanocomposites of multi-walled carbon nanotube and gelatin. A high open-circuit voltage of 0.95 V and short-circuit current (ISC) of 51.7 μA was achieved at a relative humidity of 90%. The operating mechanism of the proposed MEG was investigated by analyzing the protons generated by the dissociation of oxygen-containing functional groups during hydration. High sustainability and reliability of the electrical output performance for 100 h were demonstrated via charge screening induced by the interfacial blocking layer of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate. Moreover, excellent mechanical stability of the wearable MEG was verified by analyzing the electrical output performance under a bending state and after 10,000 bending cycles with a strain of 60%. A practical self-powered application with wearability was demonstrated using MEGs in series at the cell level, which enabled the operation of light-emitting diodes by directly attaching to a commercial mask with a form-free surface.

Bayesian Hierarchical Modelling for Uncertainty Quantification in Operational Thermal Resistance of LED Systems

Remaining useful life (RUL) prediction is central to prognostics and reliability assessment of light-emitting diode (LED) systems. Their unknown long-term service life remaining when subject to specific operating conditions is affected by various sources of uncertainty stemming from production of individual system components, application of the whole system, measurement and operation. To enhance the reliability of model-based predictions, it is essential to account for all of these uncertainties in a systematic manner. This paper proposes a Bayesian hierarchical modelling framework for inverse uncertainty quantification (UQ) in LED operation under thermal loading. The main focus is on the LED systems’ operational thermal resistances, which are subject to system and application variability. Posterior inference is based on a Markov chain Monte Carlo (MCMC) sampling scheme using the Metropolis–Hastings (MH) algorithm. Performance of the method is investigated for simulated data, which allow to focus on different UQ aspects in applications. Findings from an application scenario in which the impact of disregarded uncertainty on RUL prediction is discussed highlight the need for a comprehensive UQ to allow for reliable predictions.

Theoretical Study of LED Operating in Noncarrier Injection Mode.

Non-carrier injection (NCI) mode is an emerging driving mode for light-emitting diodes (LEDs) with numerous advantages. Revealing the relationship between the current and the applied alternating voltage in mathematical formulas is of great significance for understanding the working mechanism of NCI–LEDs and improving device performance. In this work, a theoretical model of the relationship between NCI–LED current and time-varying voltage is constructed. Based on the theoretical model, the real-time current is derived, which is consistent with the experimental results. Key parameters that can improve device performance are discussed, including voltage amplitude, frequency, equivalent capacitance, and LED reverse current. The theory presented here can serve as an important guidance for the rational design of the NCI–LEDs.

Ultralow-voltage operation of light-emitting diodes

For a light-emitting diode (LED) to generate light, the minimum voltage required is widely considered to be the emitter’s bandgap divided by the elementary charge. Here we show for many classes of LEDs, including those based on perovskite, organic, quantum-dot and III–V semiconductors, light emission can be observed at record-low voltages of 36–60% of their bandgaps, exhibiting a large apparent energy gain of 0.6–1.4 eV per photon. For 17 types of LEDs with different modes of charge injection and recombination (dark saturation currents of ~10−39–10−15 mA cm−2), their emission intensity-voltage curves under low voltages show similar behaviours. These observations and their consistency with the diode simulations suggest the ultralow-voltage electroluminescence arises from a universal origin—the radiative recombination of non-thermal-equilibrium band-edge carriers whose populations are determined by the Fermi-Dirac function perturbed by a small external bias. These results indicate the potential of low-voltage LEDs for communications, computational and energy applications.

Quantum Confinement and Dielectric Deconfinement in Quasi-Two-Dimensional Perovskites: Their Roles in Light-Emitting Diodes

In quasi-two-dimensional (quasi-2D) perovskites, inorganic quantum wells are sandwiched between organic spacers (barriers) from the energy-level perspective. In addition to quantum confinement, dielectric confinement occurs in the layered perovskites due to a large difference in the dielectric constants of the inorganic framework and the organic spacer layer. While quantum confinement increases the exciton binding energy, deconfinement in the dielectric constant results in a decrease in exciton binding energy and also an increase in carrier mobility. In this work, we investigate the effects of quantum confinement and dielectric deconfinement on the dynamic response of light-emitting diodes (LEDs) based on several series of quasi-2D perovskites and operated under an alternating voltage. With pulsed electroluminescence emission appearing in both bias sections of sinusoidal ac voltages, we show how the quantum confinement and dielectric deconfinement affect and increase the frequency range of ac LED operation, that is, the \ensuremath{-}3 dB cutoff frequency. This \ensuremath{-}3-dB frequency could be seen to increase due to a relaxation of quantum and dielectric confinements, leading to an enhancement of the effective carrier mobility in the active emitting material of the devices.

Independently Controllable Dual-Output Half-Bridge Series Resonant Converter for LED Driver Application

This article presents a dual-output series resonant converter (SRC)-based light-emitting diode (LED) driver, which utilizes three switches to form two half-bridge networks. The proposed three-switch two-half-bridge structure provides reduced switch count and independent control. It uses asymmetric duty cycle control to regulate the LED operating currents and utilizes a low-frequency pulsewidth modulation (PWM) dimming scheme for each half-bridge to control the illumination of each LED load independently. All the switches in the proposed converter operate with zero-voltage turn-on to reduce the switching losses. The operating principle and detailed analysis of the proposed converter is presented and verified with experimental studies for a total load of 50 W (i.e., LED load-1 26 W and LED load-2 24 W). Also, a comprehensive comparative study of the proposed LED driver with recent counterparts is presented.

Working Mechanisms of Nanoscale Light-Emitting Diodes Operating in Non-Electrical Contact and Non-Carrier Injection Mode: Modeling and Simulation.

Non-electrical contact and non-carrier injection (NEC&NCI) mode is an emerging driving mode for nanoscale light-emitting diodes (LEDs), aiming for applications in nano-pixel light-emitting displays (NLEDs). However, the working mechanism of nano-LED operating in NEC&NCI mode is not clear yet. In particular, the questions comes down to how the inherent holes and electrons in the LED can support sufficient radiation recombination, which lacks a direct physical picture. In this work, a finite element simulation was used to study the working process of the nano-LED operating in the NEC&NCI mode to explore the working mechanisms. The energy band variation, carrier concentration redistribution, emission rate, emission spectrum, and current-voltage characteristics are studied. Moreover, the effect of the thickness of insulating layer that plays a key role on device performance is demonstrated. We believe this work can provide simulation guidance for a follow-up study of NEC&NCI-LED.

Highly efficient polariton emission of an ultrastrongly coupled MDMO-PPV OLED

We report on a highly efficient polariton emission of poly [2-methoxy-5-(3, 7-dimethyloctyloxy)-1, 4-phenylenevinylene] (MDMO-PPV) organic light-emitting diode (OLED) operating in the ultrastrong coupling regime. MDMO-PPV film with a broadband high absorbance and modest Stokes shift is shown to enable the generation of a large coupling strength and radiative pumping of the lower polariton (LP) mode. Further combining the optimized conditions of cavity design, electron injection, and emission side mirror, we demonstrate that the polariton OLED can produce a spectrally narrow and almost angle-independent emission from the LP mode, with a maximum external quantum efficiency of >0.1% and a Rabi splitting energy of >0.8 eV.

Case study of liquid cooling of automotive headlights with hollow fiber heat exchanger

Thermal performance of small liquid cooling systems based on polymeric hollow fibers was experimentally studied for the cooling of automotive lighting components integrated with high power Light Emitting Diodes (LEDs). Firstly, the tests with control electric heaters on a printed circuit board (PCB) were performed to precisely measure the thermal performance. The cooling effect of liquid cooling system installed on the PCB board of Skoda Octavia 4 (SK38) and Skoda Enyaq (SK316) was tested as the second step. Results of the testing show that the proposed plastic radiators ensure efficient and uniform cooling of the PCBs and keep the LEDs operation temperature much below the recommended 110 °C. As the heat generation is relatively small for liquid cooling (tens of watts), there is only 3–10 l/h flow rate of coolant needed, allowing to operate the plastic radiator with low velocity and pressure drops (below 1 kPa). Additionally, apart from excellent cooling, the tested polymeric radiators are about ten times lighter than their aluminium passive finned competitors.

Critical aspects of AlGaInP-based LED design and operation revealed by full electrical-thermal-optical simulations.

Coupled electrical-thermal-optical simulations of a high-power AlGaInP-based red light-emitting diode (LED) are reported and compared with detailed characterization data of the device available in literature. The simulations enabled identification of the most critical factors limiting the LED performance. Among them, the following ones are found to be of primary importance: (i) absorption of emitted photons in a p+-GaAs contact layer, limiting the light extraction efficiency; (ii) device self-heating producing thermally stimulated electron leakage into the p-side of the LED structure; and (iii) current crowding around small circular p-electrodes enhancing additionally the electron leakage. Possible room for efficiency improvement is estimated by modeling. Optimization of some structural units of the LED design is discussed as well as further directions of the simulation model improvements.

Bright and stable light-emitting diodes made with perovskite nanocrystals stabilized in metal–organic frameworks

Perovskite nanocrystals are exceptional candidates for light-emitting diodes (LEDs). However, they are unstable in the solid film and tend to degrade back to the bulk phase, which undermines their potential for LEDs. Here we demonstrate that perovskite nanocrystals stabilized in metal–organic framework (MOF) thin films make bright and stable LEDs. The perovskite nanocrystals in MOF thin films can maintain the photoluminescence and electroluminescence against continuous ultraviolet irradiation, heat and electrical stress. As revealed by optical and X-ray spectroscopy, the strong emission originates from localized carrier recombination. Bright LEDs made from perovskite-MOF nanocrystals are demonstrated with a maximum external quantum efficiency of over 15% and a high brightness of over 105 cd m−2 after the device reaches stabilization. During LED operation, the nanocrystals can be well preserved, free of ion migration or crystal merging through protection by the MOF matrix, leading to a stable performance over 50 hours. The use of metal–organic frameworks helps protect perovskite nanocrystals, resulting in bright, stable light-emitting diodes.

Design and demonstration of Al x In1−x P multiple quantum well light-emitting diodes

Direct bandgap Al x In1−x P alloys offer an advantage for red and amber light-emitting diode (LED) operation over conventional (Al x Ga1−x )0.5In0.5P alloys due to their higher direct bandgap energies. However, the coupled variation of its bandgap energy and lattice constant present challenges for fabricating quantum well (QW)-based LED devices on GaAs substrates. Here, we present the design and demonstration of Al x In1−x P red and amber LEDs incorporating multiple QW structures. Strain balancing the QW layers and manipulating the Al x In1−x P conduction band energy through control of spontaneous atomic ordering produce structures with higher energetic barriers to electron leakage compared to (Al x Ga1−x )0.5In0.5P LEDs. We also discuss future improvements that must be made to realize high efficiency red and amber LEDs.

Improvement of Temperature and Optical Power of an LED by Using Microfluidic Circulating System of Graphene Solution.

Electric devices have evolved to become smaller, more multifunctional, and increasingly integrated. When the total volume of a device is reduced, insufficient heat dissipation may result in device failure. A microfluidic channel with a graphene solution may replace solid conductors for simultaneously supplying energy and dissipating heat in a light emitting diode (LED). In this study, an automated recycling system using a graphene solution was designed that reduces the necessity of manual operation. The optical power and temperature of an LED using this system was measured for an extended period and compared with the performance of a solid conductor. The temperature difference of the LED bottom using the solid and liquid conductors reached 25 °C. The optical power of the LED using the liquid conductor was higher than that of the solid conductor after 120 min of LED operation. When the flow rate was increased, the temperature difference of the LED bottom between initial and 480 min was lower, and the optical power of the LED was higher. This result was attributable to the higher temperature of the LED with the solid conductor. Moreover, the optical/electric power transfer rate of the liquid conductor was higher than that of the solid conductor after 120 min of LED operation, and the difference increased over time.