Abstract
Non-electrical contact and non-carrier injection (NEC&NCI) mode is an emerging driving mode for nanoscale light-emitting diodes (LEDs), aiming for applications in nano-pixel light-emitting displays (NLEDs). However, the working mechanism of nano-LED operating in NEC&NCI mode is not clear yet. In particular, the questions comes down to how the inherent holes and electrons in the LED can support sufficient radiation recombination, which lacks a direct physical picture. In this work, a finite element simulation was used to study the working process of the nano-LED operating in the NEC&NCI mode to explore the working mechanisms. The energy band variation, carrier concentration redistribution, emission rate, emission spectrum, and current-voltage characteristics are studied. Moreover, the effect of the thickness of insulating layer that plays a key role on device performance is demonstrated. We believe this work can provide simulation guidance for a follow-up study of NEC&NCI-LED.
Highlights
Closing the gap between the real world and display images to obtain a more realistic visual experience is the overall goal of display technology [1–6]
A narrow EL pulse only occurs occurs in the positive half cycle of the voltage, and the EL peak can be obtained when the in the positive half cycle of the voltage, and the EL peak can be obtained when the voltage voltage reaches its maximum value, which is consistent with experimental results reaches its maximum value, which is consistent with experimental results [11]
We using finite element simulation to study the working mechanism of the nano-light-emitting diodes (LEDs) operating in the Non-electrical contact and non-carrier injection (NEC&NCI) mode
Summary
Closing the gap between the real world and display images to obtain a more realistic visual experience is the overall goal of display technology [1–6]. The nano-LED operating in the NEC&NCI mode parent contact layer, an upper p-electrode, a bottom n-electrode, and postprocessing for has an ultrasimple structure. A direct physical the working mechanism of nano-LED in NEC&NCI mode is not clear yet. A nano-LED operating in NEC&NCI mode is established, and the working mechanism is studied. The energy band variation and carrier concentration redistribution under AC field are quantitatively demonstrated, which can provide a clear physical image for the working mechanism of NEC&NCI-LED. The finite model of a nano-LED operating in NEC&NCI mode is lished, and the working mechanism is studied. The energy band variation and carrie centration redistribution under AC field are quantitatively demonstrated, which ca vide a clear physical image for the working mechanism of NEC&NCI-LED. Simulation guidance for a follow-up study of NEC&NCI-LED
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