Operating Wavelength Range Research Articles

28 GBd PAM-8 transmission over a 100 nm range using an InP-Si3N4 based integrated dual tunable laser module.

This paper describes the detailed characterization of a novel InP-Si3N4 dual laser module with results revealing relative intensity noise (RIN) as low as -165 dB/Hz and wide wavelength tunability (100 nm). The hybrid coupled laser is deployed in an unamplified 28 GBd 8 level pulse amplitude modulation (PAM) short-reach data center (DC) transmission system. System performance, which is experimentally evaluated in terms of received signal bit error ratio (BER), demonstrates the ability of the proposed laser module to support PAM-8 transmission across a 100 nm tuning range with less than 1 dB variance in receiver sensitivity over the operating wavelength range. Comparative performance studies not only indicate that the proposed source can outperform a commercial external cavity laser (ECL) in an intensity modulation/direct detection (IM/DD) link but also highlight the critical impact of RIN in the design of advanced modulation short-reach systems.

Ternary organic photodiodes with spectral response from 300 to 1200 nm for spectrometer application

The light spectrometer is one of the most widely used optical instruments, allowing users to measure and analyze spectral components. However, to reach a broad spectral response range, most spectrometers have to combine a silicon photodiode with an additional photodiode to account for the limited operating wavelength range of each in isolation. Here, we developed organic photodiodes (OPDs) by combining a novel narrow-bandgap non-fullerene acceptor (COTIC-4Cl) with a polymer donor (PCE10) in the presence of PC71BM as the third component. The resulting device based on the ternary blended material showed a wide spectral response from 300 to 1200 nm, beyond the response range of the traditional silicon-based photodiode. Moreover, at the wavelength of 1100 nm, the resulting OPD exhibited a specific detectivity of 5 × 1012 Jones and a responsivity of 0.3 A W−1, with a cut-off frequency of >1 MHz and a linear dynamic range of >120 dB, among the best performances of OPDs. Of particular importance is that, as a proof-of-concept, the resulting ternary OPD was successfully utilized as the key component of a spectrometer to measure the absorption across 300–1200 nm. These results indicate the potential applications of the broadband response OPDs for next-generation spectrometers.

High-efficiency coupling of single quantum emitters into hole-tailored nanofibers.

We propose a scheme to enhance the coupling efficiency of photons from a single quantum emitter into a hole-tailored nanofiber. The single quantum emitter is positioned inside a circular hole etched along the radial axis of the nanofiber. The coupling efficiency can be effectively enhanced and is twice as high as the case in which only an intact nanofiber without the hole is used. The effective enhancement independent of a cavity can avoid the selection of a single emitter for the specific wavelength, which means a broad operating wavelength range. Numerical simulations are performed to optimize the coupling efficiency by setting appropriate diameters of the nanofiber and the hole. The simulation results show that the coupling efficiency can reach 62.8% when the single quantum emitter with azimuthal polarization (x direction) is at a position 200 nm from the middle of the hole along the hole-axial direction. The diameters of the nanofiber and the hole are 800 nm and 400 nm, respectively, while the wavelength of the single quantum emitter is 852 nm. Hole-tailored nanofibers have a simple configuration and are easy to fabricate and integrate with other micro/nanophotonic structures; this fiber structure has wide application prospects in quantum information processing and quantum precision measurement.

Single MEMS Chip Enabling Dual Spectral‐Range Infrared Micro‐Spectrometer with Optimal Detectors

AbstractPortable spectrometers enable rapid and low‐cost material analysis in a ubiquitous manner by measuring their molecular absorption spectrum. To measure a wide variety of materials, it is essential to have a broad spectral range of operation with acceptable sensitivity. Recently, the miniaturization of Fourier transform infrared spectrometers has been realized using the micro‐electro‐mechanical systems technology. In this work, two identical Michelson interferometers are monolithically integrated on a silicon chip, in a parallel architecture, and their mirrors are driven by a single comb‐drive actuator. The interferometers are fed by a broadband white light and their outputs are coupled to different photodetectors optimally selected for different spectral ranges. This enables an extended wavelength range of operation covering the near‐infrared from 1.4 to 2.6 µm and the mid‐infrared from 2.6 to 4.6 µm, simultaneously. Experimental results are obtained by using multimode optical fibers for light coupling between the components. The signal‐to‐noise ratio is measured and compared to theoretical expectations, showing good agreement. The spectral range of operation of the realized spectrometer is 1.4–4.6 µm (7142–2173 cm‐1) with a spectral resolution of 31.5 cm‐1. Finally, the spectrometer is used to acquire the transmission spectrum of polystyrene thin film and TS5 reference material.

Optimization and realization all-optical compact five-channel demultiplexer using 2D photonic crystal based hexagonal cavities

In this paper, a compact all-optical five-channel demultiplexer (DEMUX) using 2D photonic crystal hexagonal cavities is proposed. The proposed DEMUX comprises bus/drop waveguides, photonic crystal waveguides containing four consecutive 120° bends, two power splitters, and hexagonal resonant cavities. By adjusting the radius and refractive index of the inner/coupling rods, position, and radius of the scattering rods, the operating wavelength and the output power of each port are managed. Normalized transmission spectra and calculations of band structure are calculated by the finite-difference time-domain (FDTD) and plane-wave expansion (PWE) methods, respectively. The resonant wavelengths of the proposed structure are 1328.7 nm, 1331.9 nm, 1335.4 nm, 1340.5 nm, and 1344.4 nm, respectively. Calculation results show that the average quality factor, optical transmission efficiency, passbands of channels, minimum and maximum crosstalk of nearly 6236, 95.98%, 0.22 nm, − 18.04 dB, and − 50.2 dB, respectively. The operating wavelength range of DEMUX is 1328 nm to 1345 nm and the average channel spacing between the channels nearly about 3.93 nm. The footprint of the device is 240 μm2. The advantageous features of the proposed structure are valuable for integration based on popular planar technology and optical communications systems.

Design and Theoretical Analysis of a Dual-Polarized Quasi D-Shaped Plasmonic PCF Microsensor for Back-to-Back Measurement of Refractive Index and Temperature

We present a new quasi D-shaped plasmonic photonic crystal fiber (PCF) microsensor with dual polarization for back-to-back measurement of refractive index (RI) and temperature. The PCF structure of the microsensor is form birefringent and supports two orthogonal polarizations for independent probing of both RI and temperature variations. Thin layers of tantalum pentoxide (Ta2O5) and gold (Au) are applied to the side-polished plane to form the RI sensing section. Furthermore, four micro air holes in the lower part of its outer cladding ring are gold-coated and selectively infiltrated with a temperature-sensitive liquid. A detailed investigation and numerical analyses of the coupling characteristics and sensing responses are presented using the finite element method (FEM) with a circular perfectly matched layer (PML). The RI metrics show a maximum wavelength sensitivity of 5000 nm/RIU and a maximum amplitude sensitivity of 266.54 RIU−1 from 1.35 to 1.46 RI range in the specified operating wavelength range of 1.25- $1.65~\mu \text{m}$ . The corresponding RI resolution is $2.0\times 10^{-5}$ RIU. For the temperature sensing metrics, a maximum amplitude sensitivity of $4.8\times 10^{-2}\,\,^\circ \text{C}^{-1}$ , a maximum wavelength sensitivity of 3.0 nm/°C, and a maximum resolution of $3.33\times 10^{-2}\,\,^{\circ }\text{C}$ from −50°C to 50°C is achieved. With appropriate instrumentation incorporating a polarization selector, the microsensor can double as a real-time simultaneous multiparameter sensor. Applications for the proposed microsensor can be found in molecular science, medical measurement and analysis, terrestrial environmental engineering and data assessment, aquatic ecosystem investigations, pharmaceutical and alimentary process control and validation, cryogenic studies, and several others.

Compact, broadband, and low-loss silicon photonic arbitrary ratio power splitter using adiabatic taper.

The arbitrary ratio power splitter is widely used in photonic integrated circuits (PICs), for signal monitoring, power equalization, signal feedback, and so on. Here we designed a fabrication-tolerant, compact, broadband, and low-loss arbitrary ratio power splitter. The proposed arbitrary ratio power splitter was realized with an adiabatically tapered silicon rib waveguide with 70 nm shallow etches and an Si3N4 waveguide. The fabrication analysis confirmed that both of them are robust to fabrication errors. 3D finite-difference time-domain simulations show a very low excess loss (less than 0.02 dB for Si3N4 waveguide and 0.05 dB for Si rib waveguide), and a broadband operating wavelength range (100 nm). Good fabrication tolerance and standard critical dimensions make the arbitrary ratio power splitter compatible with the standard fabrication process of commercial silicon photonic foundries.

A Novel Hybrid Channel DWDM Demultiplexer Using Two Dimensional Photonic Crystals Meeting ITU Standards

In this paper, a six channel DWDM demultiplexer based on Two Dimensional Photonic Crystal (2D PC) design is proposed to split the 25GHz, 50GHz, and 100GHz channels in a single demultiplexer. The functional parameters of the demultiplexer such as, normalized output efficiency, Q factor, crosstalk and channel spacing are investigated for each channel. The demultiplexer consists of three hexagonal cavities, seven waveguides and a channel drop cavity. The proposed demultiplexer drops the narrow spectral linewidth with the idea of raising the number of rods between bus waveguide and drop waveguide. The operating wavelength range of the demultiplexer is ranging from 1550 nm–1560 nm. The demultiplexer provides high transmission efficiency, high Q factor, uniform spectral linewidth and uniform channel spacing to meet ITU-T G 694.1 DWDM standard. The size of the device is about 363.52 μm2, which is within the fabrication tolerance and highly desirable for Photonic Integrated Circuits (PICs).

Multi­level model of terrestrial and non­terrestrial telecommunications using optical wireless technologies

Non-terrestrial communication technologies will become a key component for the development of future 6th generation (6G) networks. Potentials, implementation prospects, problems and solutions for non-terrestrial telecommunications remain open areas for future research. The article discusses the use of millimeter and optical wavelengths in various configurations of multilevel space communications using LEO satellites, stratospheric platforms and unmanned repeaters. Wireless communication in MMW and OR has great potential for use in space communication systems. These technologies have the advantages of using azimuth line-of-sight channels in comparison with terrestrial ones. For example, the total zenith attenuation can be much less than the linear attenuation in the lower atmosphere. It also has advantages in terms of reconfiguration virtuality, coverage area and energy (spectral) efficiency. A sudden drop in communication quality due to atmospheric phenomena, including severe atmospheric turbulence, leads to the need for adaptive dynamic beam steering, which also leads to a decrease in the use of resources, both frequency and energy. Wireless and fiber optic communication systems have similarities in the operating wavelength range, processing methods. The methods of radio-photonics can be applied to wireless communication systems, where the technology of converting radio waves into optical, including the terahertz range, can be used. The comparison of the capacity of the Shannon channel for various multi-level scenarios of the satellite communication line is carried out. The directions of research to ensure the continuity of communication, adaptation to weather conditions, and the achievement of throughput up to 100 Gbit/s are analyzed.

100 Gbps/λ PON downstream O- and C-band alternatives using direct-detection and linear-impairment equalization [Invited

The future-generation passive optical network (PON) physical layer, targeting 100 Gbps/wavelength, will have to deal with severe optoelectronics bandwidth and chromatic dispersion limitations. In this paper, largely extending our Optical Fiber Communication Conference (OFC) 2020 invited paper, we review 100 Gbps/wavelength PON downstream alternatives over standard single-mode fiber in the O- and C-bands, analyzing three modulation formats (PAM-4, partial-response PAM-4, and PAM-8), two types of direct-detection receivers (APD- and SOA + PIN-based), and three digital reception strategies (unequalized, feed-forward equalized, and decision-feedback equalized). We evaluate by means of simulations the performance of these alternatives under different optoelectronics bandwidth and dispersion scenarios, identifying O-band feasible solutions able to reach 20 km of fiber and an optical path loss of at least 29 dB over a wide wavelength range of operation. Finally, we compare two digitally precompensated modulation schemes that are highly tolerant of chromatic dispersion, showing a possible extension to C-band operation, preserving direct-detection and linear-impairment equalization at the optical network unit side.

Unidirectionally Oriented Multi-Layered Carbon Nanotubes Film for Polarizer

Nanowire-grid polarizer (WGP) that is generally used for a linearly polarized UV light that required for photo-alignment requires to have a very short pitch of about 100 nm to make, which is highly cost process due to nanopattern of metals. Therefore, we propose multi-layered CNT (Carbon nanotube) sheet that can replace the conventional WGPs. In this regard, unidirectionally oriented CNT bundles are proposed which shows a strong optical activity and anisotropic behavior with visible and ultraviolet wavelengths. In addition, a film prepared by oriented CNT bundles shows a high transparency at shorter wavelengths of 380 nm and even less. Furthermore, oriented CNT film exhibits 75-80% of DOP in the region of 350nm ~ 800 nm, especially ~91% in ultraviolet region, and provides wide absorption spectrum due to the π -plasmon of graphite. Moreover, the DOP and optical activity of aligned SWCNT can be further enhanced by improving the degree of alignment of CNT by stretching the polyvinyl alcohol substrate. We prepare a multi-layer CNT polarizer by depositing CNT layers one over another on a Silicon substrate by chemical vapor deposition technique. And then a bundle of CNTs are unidirectionally stretched to make the CNT sheet by using a mechanical rotation tool. The long axis of CNT rods in each sheet is orient parallel to the stretching direction. Then the stacked CNT sheet is transferred to a glass substrate as indicated in Fig 1. (a).The final multi-layered CNT polarizer consists of 3, 5, 8 and 12 CNT sheets stacked together with matching orientations. The relative transmittance of CNT polarizer within visible region is decreasing with increasing number of CNT layers. The incident light with its electric vector parallel (perpendicular) to the stretched CNT axis is effectively absorbed (transmitted) by the multi-layered CNT polarizers. Wavelength-dependent transmittance is showing a good correlation with optical microscopic results, as shown in Fig 1. (b). The transmittance of CNT polarizer at 365 nm is measured to be >10%, 6.5%, 1.0% and 0.5% for 3, 5, 8 and 12 CNT layers, respectively, whereas the iodine polarizer is exhibiting almost zero transmittance. Moreover, the proposed CNT polarizer is capable to extend the absorption of incident light up to deep UV region providing a wider operating wavelength range from 300 nm to400 nm and all multi-layered CNT polarizers exhibit high stability against long time UV exposure. To measure the multi-layer CNT polarizer’s performance, we have employed fringe field switching (FFS) cell with 3.4 μm with film spacers (passivation layer = 0.5 µm / gap between pixel electrodes = 4.5 µm / pixel electrode width = 3.5 µm). As shown in Fig. 1(c), obtained multi-layer CNT polarizer exhibits higher DOP of 91% by matching orientation of stacked CNTs in each layer. Inserted left image in the graph is the FFS cells exposed with 3 CNT layers. It exhibits slight nonuniformity in brightness of low grey scales called mura at 3 V, whereas the cells exposed with 12 CNT layers (right insert image of Fig. 1 (c)) do not show such mura. The proposed CNT polarizer film is expected to be applied as photomask with low-cost. we believe it has strong potentiality to utilize in future photonic and electro-optic devices with broad band gap from UV to infrared. Figure 1

(Invited) Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices

Sn-containing group IV semiconductors (Si)GeSn represent a versatile platform to implement a variety of Si-compatible photonic, optoelectronic, and photovoltaic devices operating from SWIR to MIR wavelengths. This class of semiconductors provides two degrees of freedom, strain and composition, to tailor the band structure and lattice parameter thus enabling a variety of heterostructures and low-dimensional systems on a Si substrate.[1]In this presentation, the recent progress in the epitaxial growth and opto-electronic properties of metastable (Si)GeSn semiconductors with Sn contents above 15 at.% will be discussed. The growth of the (Si)GeSn multi-layer heterostructure is performed in a chemical vapor deposition (CVD) reactor on a Si wafer. By reducing the growth temperature, the Sn content in the alloy is increased, while preserving a high degree of crystal purity for the heterostructure in the topmost Sn-rich layer. Atom probe tomography (APT) measurements will be discussed to address the abruptness of the interfaces and the compositional profile across the GeSn multi-layer heterostructure.[2-4]By tailoring the strain relaxation in Ge0.83Sn0.17 room-temperature photoluminescence (PL) emission wavelength above 4.0 μm upon is achieved.[2,5] The absence of defect- and impurity-related emission and limited carrier losses into non-radiative recombination channels will be addressed using temperature-dependent PL measurements. Direct band gap absorption will be shown using transmission measurements performed at room-temperature, with energies closely matching the PL data. These observations will be discussed in the light of photocurrent measurements on GeSn photodetectors operating up to ~4.6 μm at room-temperature. The integration of p-i-n heterostructures in GeSn photodetectors will be investigated by correlating structural and opto-electronics properties of the fabricated devices.In addition, strategies to further extend the operational wavelength range of (Si)GeSn devices toward THz wavelengths will be discussed.[1] S. Wirths, et al., Prog. Cryst. Growth Charact. Mater. 62, 1 (2016)[2] S. Assali, et al., Appl. Phys. Lett. 112, 251903 (2018).[3] S. Assali, et al., J. Appl. Phys. 125, 025304 (2019).[4] S. Assali, et al., Appl. Phys. Lett. 114, 251907 (2019)[5] S. Assali, et al., arxiv:2004.13858

Multi-Parameter Optimization of an InP Electro-Optic Modulator

In this article, a method for indium phosphide (InP) electro-optic modulator (EOM) optimization is introduced. The method can be used for the design and analysis of an EOM based on the Mach-Zehnder interferometer (MZI) design. This design is based on the division of the input optical signal into two optical paths and then, after processing, it combines the light into a single waveguide. The symmetry of the structure can provide state-of-the-art EOM characteristics with a push-pull control signal. Using a traveling wave electrode (TWE) design as a starting point, the authors varied the heterostructure design and optical waveguide parameters to obtain the optimal values of initial optical loss, evenness of the initial optical loss in the operating wavelength range, and the extinction ratio and length of the modulator arm. The key features of the proposed optimization method include the following: all independent input parameters are linked into a single system, where the relationship between the electrical and optical parameters of the modulator is realized; all physically realizable combinations of the input parameters are available for analysis; and EOM optimization is possible for one target parameter or for a group of target parameters. The results of the EOM optimization using the described method are presented.

Plasmonic corrugated waveguide coupled to a rectangular nano-resonator as an optical filter

An optical filter, having a maximum transmission of 71% at single mode, with salient out-of-band rejection is designed with a combination of corrugated waveguide and nano-disk resonators. Plasmonic resonances of different bandwidths adjusted at different wavelengths have been achieved by varying the structural parameters (waveguide width, coupling gap, and resonator dimensions). Finally, a combined integrated structure is proposed as an optical filter for exciting multiple modes, which can extend the operating wavelength range (max. 2200 nm). The resonance wavelength and bandwidth of this filter can be adjusted further by tailoring the structural geometry, paving the way for highly efficient and compact optical devices and sensors.

A highly-sensitive temperature sensor based on GeO2–SiO2 long period fiber grating

A highly-sensitive long period grating temperature sensor has been introduced here, which is composed of GeO2 in the core and SiO2 in the cladding. Due to high thermo-optic coefficient contrast of the core and the cladding, the proposed sensor provides high temperature sensitivity of S = Δλ/ΔT = −2.3871 nm/°C in the temperature range of 71 °C to 406 °C. The grating period and the length of the sensor are 445.4 nm and ∼25 mm, respectively and the operating wavelength range is λ∼1.48–2.28 μm. The proposed sensor has been investigated considering material dispersion for the core and the cladding at different temperatures. Also, the conditions required for coupling of the fundamental core mode to the higher order cladding modes with respect to lattice constant have been regarded. The phase matching curves has been considered in the design of the proposed sensor and the structure has been optimized to present the maximum sensitivity, achievable in the regarded temperature range. The presented optical temperature sensor is feasible with low cost which benefits the high sensitivity, large detection range, and large operating wavelength range and it can find potential applications in the measurement of temperature in toxic, unreachable, and far distant environments such as in temperature control of lasers, and in oil or gas industries.

A compact and low-driving-voltage silicon electro-absorption modulator utilizing a Schottky diode operating up to 13.2 GHz in C-band

This paper demonstrates a 1 Vpp low-driving-voltage silicon electro-absorption modulator (EAM) utilizing a Schottky diode. Optical modulation using a Schottky diode was achieved through the intensity change of the guiding light due to free-carrier absorption in the semiconductor to change its absorption coefficient, not through conventional interference effects. The proposed EAM consists of a lateral metal–semiconductor junction that helps maximize free-carrier injection and extraction through a Schottky contact on rib waveguide. In order to achieve high-speed operation, traveling-wave type electrodes were designed. The fabricated EAM demonstrates a broad operational wavelength range of 50 nm for C-band with a uniform extinction ratio (ER) of 3.9 dB, even for a compact modulation length of 25 μm with a driving voltage of 1 Vpp. Also, the traveling-wave type electrodes enabled the modulator to operate at up to 26 GHz with 13.2 GHz of 3 dB electro-optic bandwidth experimentally.

Ultrafast Optical Modulation of Harmonic Generation in Two-Dimensional Materials.

The modulation of optical harmonic generation in two-dimensional (2D) materials is of paramount importance in nanophotonic and nano-optoelectronic devices for their applications in optical switching and communication. However, an effective route with ultrafast modulation speed, ultrahigh modulation depth, and broad operation wavelength range is awaiting a full exploration. Here, we report that an optical pump can dynamically modulate the third harmonic generation (THG) of a graphene monolayer with a relative modulation depth above 90% at a time scale of 2.5 ps for a broad frequency ranging from near-infrared to ultraviolet. Our observation, together with the real-time, time-dependent density functional theory (TDDFT) simulations, reveals that this modulation process stems from nonlinear dynamics of the photoexcited carriers in graphene. The superior performance of the nonlinear all-optical modulator based on 2D materials paves the way for its potential applications including nanolasers and optical communication circuits.

Effects of ground movements on realistic guide models for the European Spallation Source

We model the effect of ground movement, based on empirical experience, on the transport properties of long neutron guides by ray-tracing simulations. Our results reproduce the large losses found by an earlier study for a simple model, while for a more realistic engineering model of guide mounting, we find the losses to be significantly smaller than earlier predicted. A detailed study of the guide for the cold neutron spectrometer BIFROST at the European Spallation Source shows that the loss is 7.0(5) % for wavelengths of 2.3-4.0 {\AA}; the typical operational wavelength range of the instrument. This amount of loss does not call for mitigation by overillumination as suggested in the previous work. Our work serves to quantify the robustness of the transport properties of long neutron guides, in construction or planning at neutron facilities worldwide.

Enhancement of L-band optical absorption in strained epitaxial Ge on Si-on-quartz wafer: Toward extended Ge photodetectors

Enhanced optical absorption in the L band (1.565–1.625 μm) of optical communication is reported for a Ge epitaxial layer grown on a Si-on-quartz (SOQ) wafer toward an extended range Ge photodetector (PD) in Si photonics. Ge epitaxial layers are grown using ultrahigh vacuum chemical vapor deposition at 600 °C on three different wafers of bonded SOQ, bonded Si-on-sapphire (SOS), and ordinary bonded Si-on-insulator (SOI). In the Ge layer, depending on thermal expansion mismatch between the Ge layer and base substrate, different amounts of in-plane biaxial lattice strain are generated. X-ray diffraction shows that an enhanced tensile strain of 0.32 ± 0.02% is generated in Ge on SOQ, which is approximately two times higher than 0.17 ± 0.02% in Ge on SOI, whereas the strain in Ge on SOS shows a slightly compressive value of −0.06 ± 0.02%. Photoreflectance spectra for these Ge layers show a change in the direct bandgap energy in accordance with the strain. In particular, the direct bandgap energy reduces from 0.775 ± 0.003 eV for Ge on SOI to 0.747 ± 0.003 eV for strain-enhanced Ge on SOQ, being comparable to 0.74 eV for the standard III–V PD material of In0.53Ga0.47As on InP. Furthermore, enhanced optical absorption in the L band is realized for Ge on SOQ, as measured using free-space pin PDs. These results indicate that the operating wavelength range of Ge PD on SOQ extends from C (1.530–1.565 μm) to the L band.

Wide-band silicon photonic MOEMS spectrometer requiring a single photodetector.

We propose a novel integrated micro-opto-mechanical-system spectrometer design in a monochromator setup. It consists of a concave grating fabricated in a planar waveguide that is connected to a rotational electrostatic actuator, which enables angular tuning of the grating. The spectrometer covers a wide operational wavelength range (>100 nm), covering partially the E-band and fully covering the S, C, and L-bands (1416.6 nm - 1696.6 nm), and requires a single photodetector to acquire the spectrum. The spectrometer is designed to exhibit low optical losses throughout the range of motion. The spectrum can be acquired at a frequency of 1.76 kHz. The simulated acquired spectrum features an average insertion loss of -1.8 dB and a crosstalk better than -70 dB with a resolution as low as 1.62 nm. The entire device covers an area of 4 mm x 4 mm and is based on a thick silicon-on-insulator platform.