On-chip Photonics Research Articles

Ionic Solvent-Assisted MAPbBr3 Perovskite Film for Two-Photon Pumped Single-Mode Laser.

Miniaturized coherent light sources on the nanoscale are highly desired for on-chip photonics integration. However, when approaching the diffraction limit, the sub-wavelength-scale all-dielectric lasers are difficult to realize due to the trade-off between lasing performance and physical size. Especially for a thin-film laser, usually an externally complex cavity is required to provide the necessary optical feedback. Herein, we successfully shrink the MAPbBr3 perovskite thin-film laser to sub-wavelength scale (300 nm) with simplified cavity design using only an ultraviolet glue layer and a quartz glass. The morphology quality and the gain properties of the film are enhanced by introducing ionic liquid. Consequently, the stable and low-threshold single-mode laser with a highly linear polarization degree of 78.6% and a narrow line width of 0.35 nm is achieved under two-photon excitation. The excellent single-mode laser with sub-wavelength scale and ultrasimplified structure could provide a facile and versatile platform for future integrated optoelectronic devices.

Generation of quantum-certified random numbers using on-chip path-entangled single photons from an LED

Single-photon entanglement is a peculiar type of entanglement in which two or more degrees of freedom of a single photon are correlated quantum-mechanically. Here, we demonstrate a photonic integrated chip able to generate and manipulate single-photon path-entangled states, using a commercial red LED as light source. A Bell test, in the Clauser, Horne, Shimony, and Holt (CHSH) form, is performed to confirm the presence of entanglement, resulting in a maximum value of the CHSH correlation parameter equal to 2.605±0.004. This allows us to use it as an integrated semi-device independent quantum random number generator able to produce certified random numbers. The certification scheme is based on a Bell’s inequality violation and on a partial characterization of the experimental setup, without the need of introducing any further assumptions either on the input state or on the particular form of the measurement observables. In the end a min-entropy of 33% is demonstrated.

Deterministic Fabrication of a Coupled Cavity-Emitter System in Hexagonal Boron Nitride.

Light-matter interactions in optical cavities underpin many applications of integrated quantum photonics. Among various solid-state platforms, hexagonal boron nitride (hBN) is gaining considerable interest as a compelling van der Waals host of quantum emitters. However, progress to date has been limited by an inability to engineer simultaneously an hBN emitter and a narrow-band photonic resonator at a predetermined wavelength. Here, we overcome this problem and demonstrate deterministic fabrication of hBN nanobeam photonic crystal cavities with high quality factors over a broad spectral range (∼400 to 850 nm). We then fabricate a monolithic, coupled cavity-emitter system designed for a blue quantum emitter that has an emission wavelength of 436 nm and is induced deterministically by electron beam irradiation of the cavity hotspot. Our work constitutes a promising path to scalable on-chip quantum photonics and paves the way to quantum networks based on van der Waals materials.

Colloidal Semiconductor Nanocrystal Lasers and Laser Diodes.

Lasers and optical amplifiers based on solution-processable materials have been long-desired devices for their compatibility with virtually any substrate, scalability, and ease of integration with on-chip photonics and electronics. These devices have been pursued across a wide range of materials including polymers, small molecules, perovskites, and chemically prepared colloidal semiconductor nanocrystals, also commonly referred to as colloidal quantum dots. The latter materials are especially attractive for implementing optical-gain media as in addition to being compatible with inexpensive and easily scalable chemical techniques, they offer multiple advantages derived from a zero-dimensional character of their electronic states. These include a size-tunable emission wavelength, low optical gain thresholds, and weak sensitivity of lasing characteristics to variations in temperature. Here we review the status of colloidal nanocrystal lasing devices, most recent advances in this field, outstanding challenges, and the ongoing progress toward technological viable devices including colloidal quantum dot laser diodes.

Inverse design of functional photonic patches by adjoint optimization coupled to the generalized Mie theory

We propose a rigorous approach for the inverse design of functional photonic structures by coupling the adjoint optimization method and the 2D generalized Mie theory (2D-GMT) for the multiple scattering problem of finite-sized arrays of dielectric nanocylinders optimized to display desired functions. We refer to these functional scattering structures as “photonic patches.” We briefly introduce the formalism of 2D-GMT and the critical steps necessary to implement the adjoint optimization algorithm to photonic patches with designed radiation properties. In particular, we showcase several examples of periodic and aperiodic photonic patches with optimal nanocylinder radii and arrangements for radiation shaping, wavefront focusing in the Fresnel zone, and for the enhancement of the local density of states (LDOS) at multiple wavelengths over micron-sized areas. Moreover, we systematically compare the performances of periodic and aperiodic patches with different sizes and find that optimized aperiodic Vogel spiral geometries feature significant advantages in achromatic focusing compared to their periodic counterparts. Our results show that adjoint optimization coupled to 2D-GMT is a robust methodology for the inverse design of compact photonic devices that operate in the multiple scattering regime with optimal desired functionalities. Without the need for spatial meshing, our approach provides efficient solutions at a strongly reduced computational burden compared to standard numerical optimization techniques and suggests compact device geometries for on-chip photonics and metamaterials technologies.

Planar Fourier optics for slab waveguides, surface plasmon polaritons, and 2D materials.

Recent experimental work has demonstrated the potential of combining the merits of diffractive and on-chip photonic information processing devices in a single chip by making use of planar (or slab) waveguides. Here, arguments are developed to show that diffraction formulas familiar from 3D Fourier optics can be adapted to 2D under certain mild conditions on the operating speeds of the devices in question. In addition to serving those working in on-chip photonics, this Letter provides analytical tools for the study of surface plasmon polaritons, surface waves, and the optical, acoustic, and crystallographic properties of 2D materials.

High-speed thin-film lithium niobate quantum processor driven by a solid-state quantum emitter.

Scalable photonic quantum computing architectures pose stringent requirements on photonic processing devices. The needs for low-loss high-speed reconfigurable circuits and near-deterministic resource state generators are some of the most challenging requirements. Here, we develop an integrated photonic platform based on thin-film lithium niobate and interface it with deterministic solid-state single-photon sources based on quantum dots in nanophotonic waveguides. The generated photons are processed with low-loss circuits programmable at speeds of several gigahertz. We realize a variety of key photonic quantum information processing functionalities with the high-speed circuits, including on-chip quantum interference, photon demultiplexing, and reprogrammability of a four-mode universal photonic circuit. These results show a promising path forward for scalable photonic quantum technologies by merging integrated photonics with solid-state deterministic photon sources in a heterogeneous approach to scaling up.

Launching and Manipulation of Higher-Order In-Plane Hyperbolic Phonon Polaritons in Low-Dimensional Heterostructures.

Hyperbolic phonon polaritons (HPhPs) are stimulated by coupling infrared (IR) photons with the polar lattice vibrations. Such HPhPs offer low-loss, highly confined light propagation at subwavelength scales with out-of-plane or in-plane hyperbolic wavefronts. For HPhPs, while a hyperbolic dispersion implies multiple propagating modes with a distribution of wavevectors at a given frequency, so far it has been challenging to experimentally launch and probe the higher-order modes that offer stronger wavelength compression, especially for in-plane HPhPs. In this work, the experimental observation of higher-order in-plane HPhP modes stimulated on a 3C-SiC nanowire (NW)/α-MoO3 heterostructure is reported where leveraging both the low-dimensionality and low-loss nature of the polar NWs, higher-order HPhPs modes within 2D α-MoO3 crystal are launched by the 1D 3C-SiC NW. The launching mechanism is further studied and the requirements for efficiently launching of such higher-order modes are determined. In addition, by altering the geometric orientation between the 3C-SiC NW and α-MoO3 crystal, the manipulation of higher-order HPhP dispersions as a method of tuning is demonstrated. This work illustrates an extremely anisotropic low dimensional heterostructure platform to confine and configure electromagnetic waves at the deep-subwavelength scales for a range of IR applications including sensing, nano-imaging, and on-chip photonics.

Coupling Single Atoms to a Nanophotonic Whispering-Gallery-Mode Resonator via Optical Guiding.

We demonstrate an efficient optical guiding technique for coupling cold atoms in the near field of a planar nanophotonic circuit, and realize large atom-photon coupling to a whispering-gallery mode in a microring resonator with a single-atom cooperativity C≳8. The guiding potential is created by diffracted light on a nanophotonic waveguide that smoothly connects to a dipole trap in the far field for atom guiding with subwavelength precision. We observe atom-induced transparency for light coupled to a microring, characterize the atom-photon coupling rate, extract guided atom flux, and demonstrate on-chip photon routing by single atoms. Our demonstration promises new applications with cold atoms on a nanophotonic circuit for chiral quantum optics and quantum technologies.

Efficiently Controlling near-Field Wavefronts via Designer Metasurfaces

Freely tailoring the wavefronts of surface waves (SWs) plays a vital role in on-chip photonics applications, but diffraction-optics based devices usually exhibit limited tuning functionalities and low working efficiencies. Here, we propose a new strategy to manipulate the near-field wavefronts of SWs with Pancharatnam–Berry (PB) metasurfaces exhibiting predesigned phase profiles. As a SW beam flows across such a metasurface, waves scattered by different PB meta-atoms interfere with each other, forming a new SW wavefront under appropriate wavevector matching condition. As a proof of concept, we design and fabricate a series of PB metasurfaces working in the microwave regime and experimentally demonstrate that they can efficiently realize SW manipulations, including deflection, focusing, Bessel beam, and Airy beam generations. These findings may inspire the realization of highly miniaturized on-chip devices for integrated photonics applications.

High-performance waveguide coupled Germanium-on-silicon single-photon avalanche diode with independently controllable absorption and multiplication

Abstract Germanium-on-silicon (Ge-on-Si) single photon avalanche diodes (SPADs) have received wide attention in recent years due to their potential to be integrated with Si photonics. In this work, we propose and demonstrate a high-performance waveguide coupled Ge-on-Si separate-absorption-charge-multiplication SPAD with three electric terminals. By providing two separate voltage drops on the light absorption and multiplication regions, the drift and multiplication of carriers can be optimized separately. This indeed improves the freedom of voltage regulation for both areas. Moreover, thanks to the separate controlling, doping profile of the charge layer is greatly released compared to that of the conventional device because of the flexible carrier injection. In this scenario, the dark counts of the detector can be largely reduced through decreasing the electric field on the sidewalls of the Ge absorption region without affecting the detection efficiency. The proposed SPAD exhibits a high on-chip single photon detection efficiency of 34.62% and low dark count rates of 279 kHz at 1310 nm with the temperature of 78 K. The noise equivalent power is as low as 3.27 × 10−16 WHz−1/2, which is, to the best of our knowledge, the lowest of that of the reported waveguide coupled Ge-on-Si SPADs. This three-terminal SPAD enables high-yield fabrication and provides robust performance in operation, showing a wide application prospect in applications such as on-chip quantum communication and lidar.

CsPbBr3 nanocrystals plasmonic distributed Bragg reflector waveguide laser

The recent development of perovskite-based lasers showcased the outstanding optical properties of the material such as high absorption coefficient and high quantum yield. The lasers were demonstrated in the form of nanowires and nanoplates, which are difficult to be integrated on a chip in the form of high-density arrays due to the difficulties in positioning them on the chip. The solution to this problem should be to use the well-known lithography process in the fabrication process of the lasers. In this work, we demonstrate several perovskite-based plasmonic lasers that were fabricated by using the lithographic in-mold patterning method that relies on the electron beam lithography process. The lasers utilized CsPbBr3 perovskite nanocrystals as the gain material and plasmonic distributed Bragg reflector grating structure as the optical feedback provider to achieve a low lasing threshold of 42.5 μJ/cm2 with a linewidth of 0.6 nm (FWHM) at room temperature. The use of the lithographic process in the fabrication of the lasers makes it possible to fabricate and integrate them on a chip in a relatively high-density manner, so that they can be used extensively in quantum optics and on-chip integrated photonics applications.

Light Guidance Aided by the Toroidal Dipole and the Magnetic Quadrupole in Silicon Slotted-Disk Chains.

Far-field scattering of high-index nanoparticles can be hugely reduced via interference of multipolar moments giving rise to the so-called anapole states. It has been suggested that this reduced scattering can contribute to efficient transmission along periodic chains of such nanoparticles. In this work, we analyze via numerical simulation and experiments the transmission of light along chains of regular and slotted silicon disks in the frequency region over the light cone. We do not observe transmission at wavelengths corresponding to the excitation of the first electric anapole for regular disks. However, large transmission along straight and curved chains is observed for slotted disks due to the simultaneous excitation of the toroidal dipole and magnetic quadrupole modes in the disks. Photonic band calculations unveil that such large transmission can be ascribed to leaky resonances, though bound states in the continuum do not appear in the structures under analysis. Experiments at telecom wavelengths using silicon disk chains confirm the numerical results for straight and bent chains. Our results provide new insights into the role of radiationless states in light guidance along nanoparticle chains and offer new avenues to utilize Mie resonances of simple nanophotonic structures for on-chip dielectric photonics.

Single-atom infrared emission in doped silicon nanocrystals.

Silicon luminescence, due to silicon being abundant, non-toxic and harmless, is a topic of pivotal importance in optoelectronics and biological imaging. However, a major challenge in developing high-efficiency silicon light sources is the relatively weak allowable transitions. This study focuses on single atom-doped silicon nanocrystals (Si NCs) and theoretically investigates the emission behavior of single atoms within a tetrahedral coordination field. Doping a single atom in Si NCs can result in a ∼102 times improvement at least in the squared transition dipole moment (TDM2), and induce a spectral shift towards near- and mid-infrared wavelengths. These findings offer a strong foundation for designing Si NCs for on-chip optical communication and single photon emitters.

Hybrid integration of 2D materials for on-chip nonlinear photonics

Hybrid integration of 2D materials for on-chip nonlinear photonics

Ultra-low loss quantum photonic circuits integrated with single quantum emitters

The scaling of many photonic quantum information processing systems is ultimately limited by the flux of quantum light throughout an integrated photonic circuit. Source brightness and waveguide loss set basic limits on the on-chip photon flux. While substantial progress has been made, separately, towards ultra-low loss chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report the integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic circuit. We demonstrate triggered and pure single-photon emission into a Si3N4 photonic circuit with ≈ 1 dB/m propagation loss at a wavelength of ≈ 930 nm. We also observe resonance fluorescence in the strong drive regime, showing promise towards coherent control of quantum emitters. These results are a step forward towards scaled chip-integrated photonic quantum information systems in which storing, time-demultiplexing or buffering of deterministically generated single-photons is critical.

On-Chip Reconfigurable and Ultracompact Silicon Waveguide Mode Converters Based on Nonvolatile Optical Phase Change Materials.

Reconfigurable mode converters are essential components in efficient higher-order mode sources for on-chip multimode applications. We propose an on-chip reconfigurable silicon waveguide mode conversion scheme based on the nonvolatile and low-loss optical phase change material antimony triselenide (Sb2Se3). The key mode conversion region is formed by embedding a tapered Sb2Se3 layer into the silicon waveguide along the propagation direction and further cladding with graphene and aluminum oxide layers as the microheater. The proposed device can achieve the TE0-to-TE1 mode conversion and reconfigurable conversion (no mode conversion) depending on the phase state of embedded Sb2Se3 layer, whereas such function could not be realized according to previous reports. The proposed device length is only 2.3 μm with conversion efficiency (CE) = 97.5%, insertion loss (IL) = 0.2 dB, and mode crosstalk (CT) = -20.5 dB. Furthermore, the proposed device scheme can be extended to achieve other reconfigurable higher-order mode conversions. We believe the proposed reconfigurable mode conversion scheme and related devices could serve as the fundamental building blocks to provide higher-order mode sources for on-chip multimode photonics.

Electro-optic control of the external coupling strength of a high-quality-factor lithium niobate micro-resonator.

Controlling the optical coupling between a micro-resonator and waveguide plays a key role in on-chip photonic circuits. Here, we demonstrate a two-point coupled lithium niobate (LN) racetrack micro-resonator that enables us to electro-optically traverse a full set of the zero-, under-, critical-, and over-coupling regimes with minimized disturbance of the intrinsic properties of the resonant mode. The modulation between the zero- and critical-coupling conditions cost a resonant frequency shift of only ∼344.2 MHz and rarely changed the intrinsic quality (Q) factor of 4.6 × 105. Our device is a promising element in on-chip coherent photon storage/retrieval and its applications.

Silicon/graphene–ITO multiple heterojunctions and 1D PhC waveguide-based photodetection for mid-NIR IPE with high responsivity

A nanophotonic photodetector is proposed with a multi-heterojunction structure based on silicon–ITO (Indium Tin Oxide) slot waveguide covered with 2D (two-dimensional) graphene sheets. A heavily n-doped ITO layer covers the whole device and works as an electrode to reduce the light loss at the metal–graphene interfaces. Different waveguides are arranged to design a one-dimensional photonic crystal (1D PhC) and the slot is defined by creating a defect in it. The PhC provides strong confinement of light, increasing the light–matter interaction, and thus generating more electron–hole (e–h) pairs or charge carriers under light illumination. Moreover, the multiple heterojunctions enhance the e–h generation and help enhancing the transportation of charge carriers. As a result, high photocurrent, fast response across a large bandwidth, strong electron-photon interaction, and also enhancement of photocarrier multiplications can be achieved. The photodetector realizes a photoresponsivity beyond 0.6 A/W at around 1550 nm wavelength. From 0.5 V–2 V of the bias voltage, the difference between the photocurrent and the dark current for the device with the PhC is more than 5 times that for the device without the PhC. Moreover, a 25 Gbit/s non-return to zero optical transmission is measured at 10 km transmission. The proposed device has diverse applications such as telecommunications, optical computing, interconnects, laser radar, lab-on-chip for sensing, and on-chip quantum photonics.

On-chip generation and dynamic piezo-optomechanical rotation of single photons

Integrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit comprising integrated quantum dots (QDs), a Mach-Zehnder interferometer (MZI) and surface acoustic wave (SAW) transducers directly fabricated on a monolithic semiconductor platform. We demonstrate on-chip single photon generation by the QD and its sub-nanosecond dynamic on-chip control. Two independently applied SAWs piezo-optomechanically rotate the single photon in the MZI or spectrally modulate the QD emission wavelength. In the MZI, SAWs imprint a time-dependent optical phase and modulate the qubit rotation to the output superposition state. This enables dynamic single photon routing with frequencies exceeding one gigahertz. Finally, the combination of the dynamic single photon control and spectral tuning of the QD realizes wavelength multiplexing of the input photon state and demultiplexing it at the output. Our approach is scalable to multi-component integrated quantum photonic circuits and is compatible with hybrid photonic architectures and other key components for instance photonic resonators or on-chip detectors.