On-chip Frequency Comb Generation Research Articles

Performance evaluation of silicon-chip-based mid-infrared Kerr optical frequency combs with ridge cross section

We present a complementary metal-oxide-semiconductor (CMOS) compatible platform for on-chip frequency comb generation in the mid-infrared region based on a silicon-on-insulator (SOI) microring resonator with ridge cross section. Flat dispersion tailoring is performed with dispersion variation of 4.04 × 10−6 ps/nm/km by adjusting the geometry parameter and the low-loss SOI microring resonator with total quality factor (Q) up to 106 can be realized at wavelengths from 3.3 to 3.6 µm. Furthermore, the thresholdless frequency combs consisting of 50 comb lines spanning from 3.1 to 4.0 µm (over 900 nm) can be realized using SOI microring resonator with 50 mW pump power. Besides, the study shows that the frequency interval of the comb is related to the selection of the dual-pumped wavelength. The influences of the coupling coefficient and the radius of microring on the bandwidth of mid-infrared OFC are also investigated numerically which shows that remarkable enhancement of mid-infrared OFC bandwidth can reach 449 nm when the coupling coefficient varies from 0.012 to 0.05. This research work is instructive for realizing highly integrated photonics and achieving the experimental generation of mid-infrared optical frequency combs, which could enable substantial progress in spectroscopy applications.

AlGaAs Nonlinear Integrated Photonics.

Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others. Numerous nonlinear waveguide platforms have been explored for these roles; the group of materials capable of combining both passive and active functionalities monolithically on the same chip is III–V semiconductors. AlGaAs is the most studied III–V nonlinear waveguide platform to date; it exhibits both second- and third-order optical nonlinearity and can be used for a wide range of integrated nonlinear photonic devices. In this review, we conduct an extensive overview of various AlGaAs nonlinear waveguide platforms and geometries, their nonlinear optical performances, as well as the measured values and wavelength dependencies of their effective nonlinear coefficients. Furthermore, we highlight the state-of-the-art achievements in the field, among which are efficient tunable wavelength converters, on-chip frequency-comb generation, and ultra-broadband on-chip supercontinuum generation. Moreover, we overview the applications in development where AlGaAs nonlinear functional devices aspire to be the game-changers. Among such applications, there is all-optical signal processing in optical communication networks and integrated quantum photonic circuits.

Boosting dispersive wave emission via spectral phase shaping in nonlinear optical fibers

Dispersive waves (DWs) radiation in optical fibers allow to excite frequencies in spectral regions that are otherwise difficult to access. However, the resonant emission is weak and phase matching inhibits its shaping, making it ineffective in many applications. Here, we numerically investigated that DWs generated from high-energy pulses propagating in nonlinear optical fibers can be controlled through spectral phase modulation. Using tunable asymmetric and oscillatory temporal pulse shapes obtained by cubic and quadratic spectral phase modulation, we excite a multiple emission process that strongly enhances the energy and peaks of DWs. Successive collisions between the shed soliton and multiple secondary peaks of the asymmetric pulse give the mechanism to stimulate various resonant frequencies. The whole process can be precisely controlled by simply adjusting the spectral phase modulation structure without the need to change the fiber length. This radiation is either reduced or enhanced by the Raman effect depending on whether the third-order dispersion is positive or negative. Our results provide a novel strategy to manipulate DWs emission and particularly to boost the DWs energy in optical fibers that may be relevant in the development of novel electromagnetic sources for broadband supercontinuum and on-chip frequency-comb generation.

Thermo-Optic Multistability and Relaxation in Silicon Microring Resonators with Lateral Diodes

We demonstrate voltage-tunable thermo-optic bi- and tri-stability in silicon photonic microring resonators with lateral p-i-n junctions and present a technique for characterizing the thermo-optic transient response of integrated optical resonators. Our method for thermo-optic transient response measurement is applicable to any integrated photonics platform and uses standard equipment. Thermo-optic relaxation in encapsulated waveguides is found to be approximately logarithmic in time, consistent with the analytic solution for 2D heat diffusion. We develop a model for thermo-optic microring multi-stability and dynamics which agrees with experiment data over a wide range of operating conditions. Our work highlights the fundamental connection in semiconductor waveguides between active free-carrier removal and thermo-optic heating, a result of particular relevance to Kerr soliton state stability and on-chip frequency comb generation. The devices studied here were fabricated in a CMOS foundry process and as a result our model is useful for design of silicon photonic waveguide devices.

Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber.

We present a CMOS-compatible, Q-switched mode-locked integrated laser operating at 1.9 µm with a compact footprint of 23.6 × 0.6 × 0.78mm. The Q-switching rate is 720 kHz, the mode-locking rate is 1.2 GHz, and the optical bandwidth is 17nm, which is sufficient to support pulses as short as 215 fs. The laser is fabricated using a silicon nitride on silicon dioxide 300-mm wafer platform, with thulium-doped Al2O3 glass as a gain material deposited over the silicon photonics chip. An integrated Kerr-nonlinearity-based artificial saturable absorber is implemented in silicon nitride. A broadband (over 100 nm) dispersion-compensating grating in silicon nitride provides sufficient anomalous dispersion to compensate for the normal dispersion of the other laser components, enabling femtosecond-level pulses. The laser has no off-chip components with the exception of the optical pump, allowing for easy co-integration of numerous other photonic devices such as supercontinuum generation and frequency doublers which together potentially enable fully on-chip frequency comb generation.

Frequency Comb Generation Using a CMOS Compatible SiP DD-MZM for Flexible Networks

On-chip frequency comb generation is a promising solution for seeding a chip-scale optical transmitter for both Nyquist wavelength-division multiplexing (WDM) and orthogonal frequency-division multiplexing. We demonstrate flexible frequency comb generation using a silicon photonic dual-drive Mach–Zehnder modulator fabricated on a CMOS-compatible process. Our on-chip comb has five lines spaced at 20 GHz with a high tone-to-noise ratio of about 40 dB after one stage optical amplification. Our back-to-back transmission achieves bit error rates (BERs) well below 2e-2, the threshold for 20% overhead forward error correction (FEC), for 800 Gb/s using 16-GBd 32QAM on five WDM channels. We also test a seamless 800-Gb/s super-channel using $5\times 20$ GBd 16QAM, with BER below the 7% overhead FEC threshold of 3.8e-3. To the best of our knowledge, this is the first demonstration of high-spectral-efficiency data carried by an all-silicon optical frequency comb. This establishes that a silicon optical frequency comb has sufficient optical signal-to-noise ratio for high-order QAM, as well as excellent stability for super-channels without guard bands, paving the way to an integrated high-spectral-efficiency multi-carrier optical transmitter.

Aluminum nitride as nonlinear optical material for on-chip frequency comb generation and frequency conversion

Abstract A number of dielectric materials have been employed for on-chip frequency comb generation. Silicon based dielectrics such as silicon dioxide (SiO2) and silicon nitride (SiN) are particularly attractive comb materials due to their low optical loss and maturity in nanofabrication. They offer third-order Kerr nonlinearity (χ(3)), but little second-order Pockels (χ(2)) effect. Materials possessing both strong χ(2) and χ(3) are desired to enable selfreferenced frequency combs and active control of comb generation. In this review, we introduce another CMOS-compatible comb material, aluminum nitride (AlN),which offers both second and third order nonlinearities. A review of the advantages of AlN as linear and nonlinear optical material will be provided, and fabrication techniques of low loss AlN waveguides from the visible to infrared (IR) region will be discussed.We will then show the frequency comb generation including IR, red, and green combs in high-Q AlN micro-rings from single CW IR laser input via combination of Kerr and Pockels nonlinearity. Finally, the fast speed on-off switching of frequency comb using the Pockels effect of AlN will be shown,which further enriches the applications of the frequency comb.

On-chip frequency comb generation at visible wavelengths via simultaneous second- and third-order optical nonlinearities.

Microresonator-based frequency comb generation at or near visible wavelengths would enable applications in precise optical clocks, frequency metrology, and biomedical imaging. Comb generation in the visible has been limited by strong material dispersion and loss at short wavelengths, and only very narrowband comb generation has reached below 800 nm. We use the second-order optical nonlinearity in an integrated high-Q silicon nitride ring resonator cavity to convert a near-infrared frequency comb into the visible range. We simultaneously demonstrate parametric frequency comb generation in the near-infrared, second-harmonic generation, and sum-frequency generation. We measure 17 comb lines converted to visible wavelengths extending to 765 nm.