Off-cut Angle Research Articles

Surface structure of MOVPE-prepared As-modified Si(100) substrates

In the pursuit of high-efficiency tandem devices for solar energy conversion based on III-V-semiconductors, low-defect III-V nucleation on Si(100) substrates is essential. Here, hydrogen and arsenic are key ingredients in all growth processes with respect to industrially scalable metalorganic vapor phase epitaxy. Our study provides insight into Si(100) surface preparation for the initial stage of III-V nucleation. The samples investigated, prepared on substrates with different offcut angles, show single domain surfaces consisting of rows of preferentially buckled dimers. Low energy electron diffraction and reflection anisotropy spectroscopy confirm well-defined (1 × 2)/(2 × 1) majority domains. Fourier-transform infrared spectroscopy revealed hydrogen bonding to the surface dimers, while no impurities were found by XPS. Density functional theory calculations support the experimental results and reveal a novel surface motif of H-passivated Si-As mixed dimers.

Growth Mechanism of N‐Polar GaN on Vicinal N‐Polar AlN Templates in Metal‐Organic Vapor Phase Epitaxy

In this study, nitrogen‐polar (N‐polar) GaN/Al0.9Ga0.1N/aluminum nitride (AlN) structures are grown on a sapphire substrate with an offcut angle of 2.0° from the m axis using metal‐organic vapor phase epitaxy. Low‐growth temperatures of N‐polar GaN result in a shorter Ga‐migration length, and 2D GaN growth is successfully achieved. The growth temperature and V/III ratio dependence are investigated for N‐polar GaN. As a result, high‐quality and flat N‐polar GaN is successfully grown at a low temperature of 650 °C at a high V/III ratio and nonequilibrium conditions. Through X‐ray reciprocal space mapping, N‐polar GaN can be grown coherently on a N‐polar AlN template at low temperatures around 650 °C, relaxing at higher temperatures.

Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing

Face-to-face annealed and sputter-deposited aluminum nitride (FFA Sp-AlN) has potential in deep-ultraviolet light-emitting devices. Herein, the effects of the substrate off-cut angle (θsub) from an r-plane sapphire toward the c-axis projection direction and sputtering temperature (Tsp) on the crystallinity and surface morphology of a-plane AlN films are investigated. Increasing θsub in the minus-off direction, which occurs when the substrate surface approaches the sapphire c-plane, and lowering Tsp suppress the mixing of anomalous non-a-direction oriented domains. This reduced mixing enhances the surface flatness and crystallinity of a-plane FFA Sp-AlN. Moreover, the c-axis direction of the a-plane AlN film is inverted depending on the substrate off-cut angle. Ab initio calculations indicate that the interface stability between the r-plane sapphire substrate and the a-plane AlN film can explain the dependence of the crystallinity and c-axis orientation of FFA Sp-AlN on the surface off-cut of the r-plane sapphire.

Electron channeling pattern imaging – a novel approach for the determination of wafer offcut angles

Electron channeling pattern imaging – a novel approach for the determination of wafer offcut angles

Enhancing microstructure and device performance of InGaN quantum dot micro-LEDs through substrate off-cut angle modulation

InGaN quantum dots (QDs) are regarded as a compelling candidate material for the fabrication of high-quality GaN-based micro-LEDs. In this work, to study the impact of a substrate structure on InGaN QDs and QD-based micro-LEDs, GaN-on-sapphire substrates with off-cut angles toward the a-axis of 0.2°, 0.4°, and 0.7° were utilized as templates for the fabrication of InGaN QDs and InGaN QDs-based micro-LEDs. Experimental results show that GaN template with 0.4° off-cut angle exhibits the narrowest terrace width and enables InGaN QDs to be higher and more uniform. The InGaN QD sample grown on 0.4° substrate has a very small wavelength shift of 2.5 nm with temperature increasing and owns the longest photoluminescence peak wavelength implying the highest In content. Furthermore, electroluminescence (EL) spectra demonstrate that QD-based micro-LED array has excellent wavelength stability under various injection currents, and the stability can be improved further on a GaN template with narrower terraces. The results indicate that altering the terrace width of GaN template is a feasible scheme for improving the properties of GaN-based micro-LEDs.

Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates

Carbon (C) is a common impurity that acts as a compensator within GaN grown via metal–organic chemical vapor deposition (MOCVD). Reducing C in GaN will help reduce the compensation level and provide a route to achieve GaN with reliably low effective doping for high‐power device applications. GaN grown with fast growth rates on bulk GaN with various offcut angles via conventional‐MOCVD (C‐MOCVD) and laser‐assisted MOCVD (LA‐MOCVD) is compared and analyzed. C‐incorporation effects are compared through quantitative secondary‐ion mass spectroscopy analysis in GaN grown on GaN substrate with offcut angles of 4° and 0.3° toward m‐plane over a wide range of growth rates by C‐MOCVD and LA‐MOCVD. For both growth techniques investigated, a significant reduction in C‐incorporation is observed when a high‐offcut‐angle (4°) substrate is used as compared to a lower‐offcut‐angle (0.3°) substrate. With C‐MOCVD, at the fastest growth condition investigated (17.26 μm h−1 at 0.3°‐offcut, 15.25 μm h−1 at 4°‐offcut), a reduction in [C] by 21.2X is observed with an increase in the offcut angle from 0.3° to 4°. A 82.6X reduction in [C] is observed with the similar fast growth condition via LA‐MOCVD on GaN with 4° offcut angle (9.78 μm h−1) as compared to C‐MOCVD at 0.3° offcut angle (17.26 μm h−1).

Oriented lateral growth of two-dimensional materials on c-plane sapphire.

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) represent the ultimate thickness for scaling down channel materials. They provide a tantalizing solution to push the limit of semiconductor technology nodes in the sub-1 nm range. One key challenge with 2D semiconducting TMD channel materials is to achieve large-scale batch growth on insulating substrates of single crystals with spatial homogeneity and compelling electrical properties. Recent studies have claimed the epitaxy growth of wafer-scale, single-crystal 2D TMDs on a c-plane sapphire substrate with deliberately engineered off-cut angles. It has been postulated that exposed step edges break the energy degeneracy of nucleation and thus drive the seamless stitching of mono-oriented flakes. Here we show that a more dominant factor should be considered: in particular, the interaction of 2D TMD grains with the exposed oxygen-aluminium atomic plane establishes an energy-minimized 2D TMD-sapphire configuration. Reconstructing the surfaces of c-plane sapphire substrates to only a single type of atomic plane (plane symmetry) already guarantees the single-crystal epitaxy of monolayer TMDs without the aid of step edges. Electrical results evidence the structural uniformity of the monolayers. Our findings elucidate a long-standing question that curbs the wafer-scale batch epitaxy of 2D TMD single crystals-an important step towards using 2D materials for future electronics. Experiments extended to perovskite materials also support the argument that the interaction with sapphire atomic surfaces is more dominant than step-edge docking.

Influence of Si(111) substrate off-cut on AlN film crystallinity grown by magnetron sputter epitaxy

The increasing demand for More than Moore devices requires epitaxy technology to keep up with the discovery and deployment of new semiconductors. An emerging technology for cost-effective, device-quality growth is magnetron sputter epitaxy, though detailed studies on the process itself remain scarce. Here, we report an extensive study on the correlation between the substrate off-cut and film quality in AlN-on-Si heteroepitaxy. Controlled reactive pulsed magnetron sputtering is used to grow epitaxial AlN(0001) films on in situ Ar plasma etched off-cut Si(111) substrates with growth rates above 1.5 nm/s. Substrate off-cut angles in the range of 0.02°–0.30° are investigated and precisely determined by high-resolution x-ray diffraction. Structural examination of the AlN films is carried out by transmission electron microscopy and high-resolution x-ray diffraction. The AlN/Si interface is well-defined and two types of AlN domains with epitaxial relationships are observed. The formation of secondary rotation domains deteriorates the crystal quality substantially. Substrates with small off-cuts, ideally no off-cut substrates, appear to be crucial for suppressing the formation of secondary domains and further result in a better overall crystal quality of AlN films. We discuss this effect in relation to the AlN/Si interface, the substrate pre-treatment, and nucleation.

MOVPE growth of AlN and AlGaN films on N-polar annealed and sputtered AlN templates

We performed metalorganic vapor phase epitaxy (MOVPE) growth of AlN (MOVPE-AlN) and AlGaN films on N-polar face-to-face annealed and sputtered AlN templates (N-polar FFA Sp-AlN) on sapphire substrates. The off-cut angle of the sapphire substrates was varied from 0.2° to 6.0°. The effects of the off-cut angle on the surface morphology and crystallinity of the N-polar MOVPE-AlN and AlGaN were elucidated. The results showed that the crystallinities of N-polar FFA Sp-AlN and MOVPE-AlN were independent of the off-cut angle. The threading dislocation density (TDD) was estimated to be approximately 5.0 × 108cm−2 by using values of the X-ray rocking curve full-width at half maximum. In comparison, the density of the hillocks on the MOVPE-AlN surfaces was suppressed, and the surface flatness was improved by increasing the off-cut angle of the sapphire substrate. The crystallinity of the AlGaN was improved by increasing the off-cut angle. Our results prove that N-polar AlN and AlGaN films with smooth surfaces and low TDDs could be achieved by MOVPE on N-polar FFA Sp-AlN with a large substrate off-cut angle of 6.0°.

Investigation of carbon incorporation in laser-assisted MOCVD of GaN

Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues in further improving GaN vertical power device performance. This work presents a laser-assisted MOCVD (LA-MOCVD) technique to address the high-C issue in MOCVD homoepitaxial GaN under different growth rate (Rg) regimes and studies the correlations between [C] and Rg. [C] in LA-MOCVD GaN is reduced by 50%–90% as compared to the conventional MOCVD GaN for a wide growth rate range between 1 and 16 μm/h. A mass-transport based model is developed to understand the C incorporation at different Rg regimes. The results obtained from the developed model are in good agreement with experimental data. The model further reveals that LA-MOCVD effectively suppresses C incorporation by reducing the active C species in the gas phase. Moreover, high step velocity in step flow growth mode can facilitate C incorporation at fast Rg, exhibiting steeper C increase. The theoretical model indicates that [C] can be suppressed below 1016 cm−3 with a fast growth rate (Rg) of 10 μm/h by utilizing higher power LA-MOCVD and freestanding GaN substrates with larger off-cut angles.

Effective substrate for the growth of multilayer h-BN on sapphire—substrate off-cut, pre-growth, and post-growth conditions in metal-organic vapor phase epitaxy

The substrate is one of the key components that determines the quality of the epitaxial layers. However, the implications of growing two-dimensional layers on three-dimensional bulk substrates have not yet been fully understood, and these implications need to be studied for different combinations of materials and substrates. Here, we present a study that addresses the influence of the sapphire substrate off-cut angle on the final growth of two-dimensional layers of hexagonal boron nitride (h-BN) by metal-organic vapor phase epitaxy (MOVPE). A two-step wafer-scale process was used in one epitaxial MOVPE procedure. The main process starts with a self-limiting continuous growth of a BN buffer followed by flow-modulated epitaxy in the second step, and is used to study substrates with different off-cuts angles, pre-growth nitridation steps, and post-growth annealing. An initial nitridation step at the growth temperature allowed for the growth of an AlN sublayer. This layer is shown to smooth out the underlying sapphire and establishes an ‘effective’ sapphire/AlN substrate. This step is also responsible for enforcing a specific growth of the BN layer in a crystallographic orientation, which is shown to strongly deviate from the substrate for off-cut angles larger than 0.3°. A substrate with off-cut angle of 1° clearly yields the highest quality of h-BN layers as evidenced by the lowest amount of debris on the surface, most intense x-ray diffraction signal, minimal Raman phonon line width and thinnest amorphous BN (a-BN) at the interface with the effective substrate. Our study shows that the off-cut angles of sapphire substrates strongly influence the final epitaxial h-BN, clearly indicating the importance of optimal substrate preparation for the growth of two-dimensional BN layers. Post-growth annealing in N2 atmosphere at 800 °C improves the top surface morphology of the final stack, as well as suppresses further the presence of a-BN.

Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor

This study proposes a nitrogen-polar (N-polar) Al x Ga1−x N/Al0.9Ga0.1N/AlN structure that can generate a large amount of two-dimensional electron gas to enhance the device development of samples. Additionally, we have analyzed the critical thickness of N-polar AlGaN/AlN based on the theoretical calculations of three different values of film thickness. The metalorganic vapor-phase epitaxy method is used to grow N-polar Al x Ga1−x N/Al0.9Ga0.1N/AlN on sapphire substrates. The substrates with a misorientation angle of 2° along the m-axis and a-axis directions are selected to determine the effect of the off-cut angle on sample flatness and current–voltage characteristics. Furthermore, we determine the effect of Al contents on N-polar Al x Ga1−x N/Al0.9Ga0.1N/AlN under the optimum growth conditions of the growth thickness of the top layer of AlGaN and sapphire substrate. The results indicate that the current throughput increases with a decrease in Al content. Lastly, we have fabricated the N-polar AlGaN/AlN heterostructure field effect transistor (FET) to demonstrate the static FET characteristics.

(Invited) Optical Characterization of Bulk GaN Substrates and Homoepitaxial Films

Low ON-resistance and high breakdown voltage, made possible by improved critical electric field and mobility, has promoted GaN from a potential to the most promising semiconductor material for use in the next-generation of medium- and high voltage-power converters. The commercial availability of large area substrates, produced by HVPE (Hydride Vapor Phase Epitaxial, a quasi-bulk deposition technique) and ammonothermal bulk growth method, provides wafers with reduce concentrations of extended defect, allows the deposition of electronic grade epitaxial films and the realization of high performance electronic devices. Despite that, many steps of substrate preparation, such as miss-cut orientation and surface finishing, must be improved and standardized to yield reproducible epitaxial film growth. To verify the importance of substrate characteristics on the intrinsic properties of homoepitaxial MOCVD films, we initially evaluated substrate provided by various commercial supplies. The substrate effects on epi morphology, uniformity, and impurity incorporation were substantiated by growing simultaneously on wafers from different vendors. The goal of this work is to detect and identify defects in GaN substrates with a series of quick, non-destructive, inexpensive techniques with capabilities of mapping whole wafers.All evaluated substrates had nominally similar as-received specifications (resistivity, thickness, off-cut angle, bow, surface finish). The substrates were evaluated with a variety of techniques including Raman spectroscopy, photoluminescence, white light interferometry, and Nomarski imaging, enabling the detection of different concentrations of grain boundaries, impurities, point defects, v-shaped pits, polishing defects, crystal stress damage, and non-uniform insulating and conductive regions. The substrates can be grouped in two different categories: those with uniform characteristics, including carrier concentration, and those without. Comparing these results to those from homoepitaxial growth on the same wafers, the effects are both subtle and overt. Macroscopic surface morphology, which has shown a direct correlation to leakage current, copies and exaggerates that of the underlying substrate. Photoluminescence of the homoepitaxial surface along with Raman spectroscopy show that non-uniformities in the substrate carrier concentration can continue into the epitaxy.If time permits, results from vertical Schottky diodes, fabricated to quickly evaluate device performance, will presented. While most of the films showed the ability to withstand high electric fields, more uniform electrical properties were observed for those grown on substrates having more uniform properties. These results show that improving bulk substrates is the path to high voltage vertical devices, and that such substrates have a significant influence on device performance. Acknowledgments: Work at NRL is supported by the Office of Naval Research

Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates

The effects of halide vapor phase epitaxial (HVPE) growth conditions such as input V/III ratio and substrate off-cut angle on the surface morphology of n-type GaN layers grown on GaN (0001) freestanding substrates were investigated to develop a model for growing smooth surfaces. The spiral hillock density increased with increasing input V/III ratio and/or decreasing off-cut angle. The critical off-cut angle between the spiral growth and the step-flow growth depended on the vapor supersaturation calculated by thermodynamic analysis. To understand the transition of the growth mode, we proposed a Burton–Cabrera–Frank-theory-based model considering the effect of spiral growth, which was utilized to explain the obtained experimental results. The developed growth model can be effective for predicting the HVPE growth mode between the spiral growth and the step-flow growth.

Investigation of off-cut angle of sapphire for epitaxial lateral overgrowth of AlN and fabrication of high-quality AlN template

Using a metal–organic vapor phase epitaxy, the epitaxial lateral overgrowth (ELO) of AlN was performed by varying a vicinal off-cut angle from 0.15 to 2.0° of sapphire substrates oriented to the m-axis, i.e., the a-axis of AlN. During overgrowth, step bunching resulted in the efficient conversion of dislocations to elongated voids. The dislocations were terminated at the voids formed over the groove regions and the low and high etch pit density (EPD) regions were observed. The dislocation was reduced by increasing the off-cut angle of the sapphire substrates up to 0.8°; however, low-EPD region became small in the ELO. Thus, we have attempted to achieve a longer growth of the ELO-AlN layer on the sapphire substrate with the off-cut angle of 0.15°. As a result, the EPD decreased with the increasing thickness. The ELO-AlN layer with the thickness of 15.9 µm exhibited the EPD of 2.1 × 106 cm−2 in the low dislocation region.

Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1-x)2O3 Heteroepitaxial Thin Films.

Heteroepitaxy of β-phase gallium oxide (β-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of (2̅01)-oriented β-Ga2O3 heteroepitaxial thin films were investigated. Unintentionally doped β-Ga2O3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0° and 6° toward ⟨112̅0⟩ via metal-organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the β-Ga2O3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the β-Ga2O3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick β-Ga2O3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye-Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of β-Ga2O3 films on 6° offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the β-Ga2O3 films grown on 6° offcut sapphire exhibit a lower thermal boundary conductance at the β-Ga2O3/sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown (2̅01)-oriented β-(AlxGa1-x)2O3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the β-(AlxGa1-x)2O3 films exhibit lower thermal conductivities (2.8-4.7 W/m·K) than the β-Ga2O3 thin films. The dominance of the alloy disorder scattering in β-(AlxGa1-x)2O3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown β-phase Ga2O3 and (AlxGa1-x)2O3 thin films and lays the groundwork for the thermal modeling and design of β-Ga2O3 electronic and optoelectronic devices.

Hydrogen and deuterium termination of diamond for low surface resistance and surface step control

A 2D conductive hole gas in diamond is obtained by exposing diamond to a plasma formed in H2 or D2, which terminates the diamond surface with H or D. The diamond is still insulating until it is activated by exposing it to air or overcoating it by atomic layer deposition, ALD, with Al2O3/SiO2 or evaporated WO3. The carrier density of air activated diamond slowly decreases in time, days to weeks, and the carrier mobility increases. However, the carrier density deceases faster than the mobility increases and the diamond's surface resistance increases in time. The mobility is empirically related to the carrier density by a power law, mobility = Q (carrier density)-0.42, where Q is determined by fitting the equation to the data.The value of Q and the surface resistance of the 2D gas depends upon the removal of impurities such as C, K, and Na in the plasma, as well as the offcut angle from the (100) diamonds. These impurities originate from carbon on the chamber walls, the Mo structure that supports the diamond during plasma exposure, impurities on the diamond, such as H2SO4, after inefficient cleaning, and the carbon from the diamond itself as it is etched in the plasma.Once the impurities are reduced, then the offcut angle of (100) diamond to the [011]-axis generates crystal steps generally parallel to the 01¯1axis on the diamond surface. Resistance along the steps is lower than perpendicular to the steps. With the impurities removed, six (100) diamonds offcut by ~6° to the [011] axis had resistance parallel to the steps, 01¯1,vary from 1.32 to 1.95 kΩ sq.−1 with an average of 1.70 ± 0.25 kΩ sq.−1 and perpendicular to the steps, [011], from 1.93 to 3.20 kΩ sq.−1 with an average of 2.51 ± 0.4 kΩ sq.−1.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD.

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

(Invited) P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication

Silicon Carbide is rapidly growing in the power electronics industry. It is fueled by several robust long-term growth markets like renewables, cloud computing and electric vehicles. There is a wide release and proliferation of Diode and MOSFET devices from various companies in the marketplace. There is a continuous push in subsequent generations to improve device performance, reliability and efficiency. Some of the advanced design concepts in Silicon like super-junction technology have significant manufacturing roadblocks like diffusion, epi regrowth and implantation. In this work, we present results of both p-type and n-type channeled implants into 4º offcut N-type SiC substrates and Epitaxial layers using a Nissin Ion Equipment IMPHEAT system. Deep-channeled implants can be considered an enabling technology for the fabrication of advanced device designs including super-junction structures.The use of channeled implants have been reported on on-axis [1] SiC and 4º offcut using primarily low energies [2,3]. One major concern while trying to check the feasibility of channeling and implement it in mass-production is the reliability and variation of the off-cut angle. Fig. 1 shows the off-cut angle reported by the substrate vendor and the actual offcut angle as measured by X-ray diffraction. The actual off-cut variation is comparatively low. However, per wafer inline XRD measurements might be needed for accurate channeling. Fig. 2 shows how a 960kev 1e13cm-2 dose channeled implant changes the wafer shape. This change in shape is consistent with other high temperature treatments like Epi growth. Fig. 3 shows the room temperature channeled and non-channeled implant of triple charged Aluminum at 960 keV with a dose of 1e13cm-2. The offcut angle as measured by XRD of 4.1º gives the maximum range. The implant is also not very sensitive to off-cut disorientation. Fig. 4 shows the channeled implants as a function of implantation temperature. As expected, the range is reduced and thereby restricts very high doses. Fig. 5 shows similar channeled and non-channeled implantation of Boron and Phosphorous. The phosphorous profiles are flat and can be effectively used for n-type doping. A comprehensive review of effects of dose and orientation on the channeled profiles will be presented. Channeled implanted wafers were activated and the activation measured by fabricating Metal Schottky contacts. The effect of high and low warp wafers on channeled implant profiles are also discussed. Further implants at different energies are obtained and combined to get box-like profiles. The error in off-cut degree that can be tolerated for channeled implants in mass-production is estimated for different energies. Implications to super-junction device fabrication is discussed.