Manganese ferrite (Mn x Fe 3− x O 4) thin films have been prepared by a sol–gel method. The samples ( x≤1.25) are polycrystalline containing well-defined grains and maintain cubic spinel structure with increasing lattice constant with x. The substituting Mn ions were found to have multi-valence, +2 and +3, by X-ray photoelectron spectroscopy. The saturation magnetization of the Mn-substituted films measured by vibrating sample magnetometry was found to increase from that of Fe 3O 4 at low x and then gradually decreases as x increases further. Such magnetic behavior can be explained in terms of the dominance of Mn 2+ species over Mn 3+ at low x and the gradual decrease in the population ratio Mn 2+/Mn 3+ as x increases. The observed decrease in the coercivity with increasing x implies the increase in octahedral Mn 2+ population. The Mn-substituted samples exhibit magnetoresistance (MR) effect the maximum intensity of which is gradually reduced with x from that of Fe 3O 4. All samples show increasing MR with increasing external field ( H), while their magnetization curves start to saturate near H=2 kOe. Such increasing MR with H can be explained in terms of the tunneling of spin-polarized carriers across grain boundaries. The reduction in the MR intensity with x can be partly explained in terms of the decrease in spin-polarized carrier density associated with octahedral occupation of Mn 2+ ions.