Observation Of Negative Differential Resistance Research Articles

Evidence for the role of the indirect-gap electron states in tunnelling through thin AlAs barriers

An asymmetric GaAs/AlAs superlattice located at the interface of a p-n junction is shown to give rise to novel features in the current-voltage characteristics. The observation of negative differential resistance up to 300 K is reported. The data are found to be consistent only with tunnelling via the lowest (indirect) band gap through the AlAs barriers.

Room-temperature negative differential resistance in strained-layer GaAs-AlGaAs-InGaAs quantum well heterostructures

We report the first room-temperature experimental observation of negative differential resistance in a strained-layer double barrier resonant tunneling structure. Room-temperature negative differential resistance (peak-to-valley ratio=1.4) was observed in GaAs-AlGaAs-InxGa1−xAs-AlGaAs-GaAs structure for indium compositions as high as x=0.09. We show that the onset of negative differential resistance can be adjusted by varying only the indium composition while holding all the other design parameters constant.

Room-Temperature oscillations in a superlattice structure

We report on the observation of negative differential resistance driven oscillations at room temperature in which the active element is a novel superlattice structure.

Observation of negative differential resistance in CHIRP superlattices

Fabrication of a CHIRP (coherent heterointerfaces for reflection and penetration) superlattice device is presented. Negative differential resistance (NDR) is observed at around 85 K. This NDR is found only in one bias polarity and is not found when the bias is reversed, which is characteristic of CHIRP superlattices.

Observation of negative differential resistance in In 0.53 Ga 0.47 As/InP:Fe JFETs

A negative differential resistance (NDR) is observed in the drain-current/drain-source-voltage characteristic of In0.53-Ga0.47As/InP: Fe JFETs with gate lengths of 2 ?m and 3 ?m at small forward-biased gate-source voltages. This phenomenon is explained by the existence of a stationary Gunn domain in the channel at the drain side edge of the gate.

Negative Differential Resistance and Instability in NbSe3

We report the observation of negative differential resistance and dynamic instability in the sliding charge-density-wave state of Nb${\mathrm{Se}}_{3}$. The instabilities are characterized by an unusually large $\frac{1}{f}$ noise and intermittent chaoticlike response. We interpret our results in terms of domain coupling in the charge-density-wave condensate, resulting in hopping between distinct current-carrying states.

Observation of negative differential resistance in Ga1−x Inx as light-emitting diodes

Observation of negative differential resistance in Ga1−x Inx as light-emitting diodes