O3 Thick Films Research Articles

Optimization of a LaNiO3 Bottom Electrode for Flexible Pb(Zr,Ti)O3 Film-Based Ferroelectric Random Access Memory Applications

The direct growth of ferroelectric films onto flexible substrates has garnered significant interest in the advancement of portable and wearable electronic devices. However, the search for an optimized bottom electrode that can provide a large and stable remnant polarization is still ongoing. In this study, we report the optimization of an oxide-based LaNiO3 (LNO) electrode for high-quality Pb(Zr0.52Ti0.48)O3 (PZT) thick films. The surface morphology and electrical conductivity of sol-gel-grown LNO films on a fluorophlogopite mica (F-mica) substrate were optimized at a crystallization temperature of 800 °C and a film thickness of 120 nm. Our approach represents the promising potential pairing between PZT and LNO electrodes. While LNO-coated F-mica maintains stable electrical conductivity during 1.0%-strain and 104-bending cycles, the upper PZT films exhibit a nearly square-like polarization–electric field behavior under those stress conditions. After 104 cycles at 0.5% strain, the remnant polarization shows decreases as small as ~14%. Under flat (bent) conditions, the value decreases to just 81% (49%) after 1010 fatigue cycles and to 96% (85%) after 105 s of a retention test, respectively.

Low leakage current, enhanced energy storage, and fatigue endurance in room-temperature deposited (Pb0.93La0.07)(Zr0.82Ti0.18)O3 thick films

Low leakage current, enhanced energy storage, and fatigue endurance in room-temperature deposited (Pb0.93La0.07)(Zr0.82Ti0.18)O3 thick films

Intense Pulsed Light Thermal Treatment of Pb(Zr,Ti)O3 /Metglas Heterostructured Films Resulting in Extreme Magnetoelectric Coupling of over 20Vcm-1 Oe-1.

Magnetoelectric (ME) film composites consisting of piezoelectric and magnetostrictive materials are promising candidates for application in magnetic field sensors, energy harvesters, and ME antennas. Conventionally, high-temperature annealing is required to crystallize piezoelectric films, restricting the use of heat-sensitive magnetostrictive substrates that enhance ME coupling. Herein, a synergetic approach is demonstrated for fabricating ME film composites that combines aerosol deposition and instantaneous thermal treatment based on intense pulsed light (IPL) radiation to form piezoelectric Pb(Zr,Ti)O3 (PZT) thick films on an amorphous Metglas substrate. IPL rapidly anneals PZT films within a few milliseconds without damaging the underlying Metglas. To optimize the IPL irradiation conditions, the temperature distribution inside the PZT/Metglas film is determined using transient photothermal computational simulation. The PZT/Metglas films are annealed using different IPL pulse durations to determine the structure-property relationship. IPL treatment results in an enhanced crystallinity of the PZT, thus improving the dielectric, piezoelectric, and ME properties of the composite films. An ultrahigh off-resonance ME coupling (≈20Vcm-1 Oe-1 ) is obtained for the PZT/Metglas film that is IPL annealed at a pulse width of 0.75ms (an order of magnitude higher than that reported for other ME films), confirming the potential for next-generation, miniaturized, and high-performance ME devices.

Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films

In this study, non-stoichiometry lead-free piezoelectric ceramic Li0.058(K0.48Na0.535)0.966(Nb0.9Ta0.1)O3 (LKNNT) thick films were deposited on Pt/Ti/Si substrates using spin-coating method technology to form a LKNNT/Pt/Ti/Si structure of the micro-pressure thick films. Additionally, the influence on the crystalline properties, surface microstructure images, and mechanical properties, and the piezoelectric properties of the non-stoichiometry lead-free piezoelectric ceramic Li0.058(K0.48Na0.535)0.966(Nb0.9Ta0.1)O3 (LKNNT) thick films were observed, analyzed, and calculated using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), focused ion beam (FIB) microscopy, nano-indention technology, and other instruments. This study was divided into two parts: The first part was the investigation into the fabrication parameters and properties of the bottom layer (Pt) and buffer layer (Ti). The Pt/Ti/Si structures were achieved by the DC sputtering method, and then the rapid thermal annealing (RTA) post-treatment process was used to re-arrange the grains and reduce defects in the lead-free Li0.058(K0.48Na0.535)0.966(Nb0.9Ta0.1)O3 (LKNNT) thick films. In the second part, lead-free Li0.058(K0.48Na0.535)0.966(Nb0.9Ta0.1)O3 (LKNNT) powder was prepared by the solid-state reaction method, and then acetic acid (C2H4O2) solvent was added to form a slurry for spin-coating technology processing. The fabrication parameters, thick film micro-structure, crystalline properties, nano-indention technology, and the piezoelectric coefficient characteristics of the developed lead-free Li0.058(K0.48Na0.535)0.966(Nb0.9Ta0.1)O3 (LKNNT)/Pt/Ti/Si structure of the micro-pressure thick film devices a were investigated. According to the experimental results, the optimal fabrication processing parameters of the lead-free Li0.058(K0.48Na0.535)0.966(Nb0.9Ta0.1)O3 (LKNNT) were an RTA temperature of 500 °C, a Ti buffer-layer thickness of 273.9 nm, a Pt bottom electrode-layer thickness of 376.6 nm, a theoretical density of LKNNT of 4.789 g/cm3, a lattice constant of 3.968 × 10−8 cm, and a d33 value of 150 pm/V. Finally, regarding the mechanical properties of the micro-pressure devices for when a microforce of 3 mN was applied, the thick film revealed a hardness of 60 MPa, a Young’s modulus of 13 GPa, and an elasticity interval of 1.25 μm, which are suitable for future applications of micro-pressure devices.

Microstructural Origin of the High-Energy Storage Performance in Epitaxial Lead-Free Ba(Zr0.2Ti0.8)O3 Thick Films.

In our previous work, epitaxial Ba(Zr0.2Ti0.8)O3 thick films (~1–2 μm) showed an excellent energy storage performance with a large recyclable energy density (~58 J/cc) and a high energy efficiency (~92%), which was attributed to a nanoscale entangled heterophase polydomain structure. Here, we propose a detailed analysis of the structure–property relationship in these film materials, using an annealing process to illustrate the effect of nanodomain entanglement on the energy storage performance. It is revealed that an annealing-induced stress relaxation led to the segregation of the nanodomains (via detailed XRD analyses), and a degraded energy storage performance (via polarization-electric field analysis). These results confirm that a nanophase entanglement is an origin of the high-energy storage performance in the Ba(Zr0.2Ti0.8)O3 thick films.

Insights into improved ferroelectric and electrocaloric performance of Ba0.85Ca0.15Ti0.9Zr0.1O3 thick films grown by the electrophoretic deposition

Lead-free Ba0.85Ca0.15Ti0.9Zr0.1O3 (BCZT) bulk ceramics have recently gained attention as one of the attractive candidates for electrocaloric cooling due to their large heat absorption capacity induced by electro-structural phase transition near room temperature. However, adiabatic temperature change (ΔT) at room temperature in ceramics has been limited by their relatively low dielectric breakdown strength. Thick films, in this respect, possess the advantages of ceramics (volume) and thin films (thickness). In this work, a systematic ferroelectric and electrocaloric investigation of BCZT thick films, fabricated by electrophoretic deposition combined with laser annealing, has been carried out. Laser annealing at an optimized energy density of 398 W/cm2 has resulted in densely packed grain morphology with no compositional heterogeneities. Analysis of the scaling behavior of dynamic hysteresis revealed that ferroelectric domain reversal in BCZT/Pt has good stability and low energy consumption in the saturation region. The present thick films exhibited larger breakdown strength of 294 kV/cm and recoverable energy storage density of ∼7.3 J/cm3, at least five-fold enhancement compared to the bulk which is stable up to a 4 mm bending radius. The indirect electrocaloric measurements displayed parameters such as a ΔT and entropy change (ΔS) of 2.94 K and 3.1 J kg−1 K−1 respectively, for 205 kV/cm which are more than two orders increased compared to the bulk. Higher values of ΔT (1.9 K) at 25 °C, refrigerant capacity of 249 J/kg, and responsivity of 0.143 K mm/kV for BCZT/Pt film compared to relevant lead-free ferroelectric thick films elucidate the potential use of these films for solid-state refrigeration applications. The work also presents electrophoretic deposition with laser annealing as an alternative technique to widely studied tape-casting of thick films for electrocaloric studies.

Large energy storage density and electrocaloric strength of Pb0.97La0.02(Zr0.46-xSn0.54Tix)O3 antiferroelectric thick film ceramics

Pb0.97La0.02(Zr0.46-xSn0.54Tix)O3 (PLZST, x = 0.04, 0.06, 0.08, 0.15, and 0.18) antiferroelectric thick film ceramics were fabricated via a tape-casting approach. The energy storage performance and electrocaloric effect (ECE) were investigated in terms of the measurements on the hysteresis loops and Maxwell relation. The maximum value of energy storage density of 5.2 J/cm3 and efficiency of 78.2% were procured at 600 kV/cm in Pb0.97La0.02(Zr0.42Sn0.54Ti0.04)O3 thick film ceramics at room temperature. In addition, the ECE was indirectly calculated using the Maxwell relation and the polarizations extracted from the P-E loops as a function of temperature and electric field, an adiabatic temperature change of ΔT = 2.47 °C was procured in Pb0.97La0.02(Zr0.42Sn0.54Ti0.04)O3 thick film ceramics at 500 kV/cm, corresponding to the calculated electrocaloric strength of 0.48 K(MV/m)−1. These results indicate that the PLZST thick film ceramics are promising for practical applications in high-power energy storage capacitors and solid-state refrigeration devices.

Characterization and Laser Structuring of Aqueous Processed Li(Ni0.6Mn0.2Co0.2)O2 Thick-Film Cathodes for Lithium-Ion Batteries.

Lithium-ion batteries have led the revolution in portable electronic devices and electrical vehicles due to their high gravimetric energy density. In particular, layered cathode material Li(Ni0.6Mn0.2Co0.2)O2 (NMC 622) can deliver high specific capacities of about 180 mAh/g. However, traditional cathode manufacturing involves high processing costs and environmental issues due to the use of organic binder polyvinylidenfluoride (PVDF) and highly toxic solvent N-methyl-pyrrolidone (NMP). In order to overcome these drawbacks, aqueous processing of thick-film NMC 622 cathodes was studied using carboxymethyl cellulose and fluorine acrylic hybrid latex as binders. Acetic acid was added during the mixing process to obtain slurries with pH values varying from 7.4 to 12.1. The electrode films could be produced with high homogeneity using slurries with pH values smaller than 10. Cyclic voltammetry measurements showed that the addition of acetic acid did not affect the redox reaction of active material during charging and discharging. Rate capability tests revealed that the specific capacities with higher slurry pH values were increased at C-rates above C/5. Cells with laser structured thick-film electrodes showed an increase in capacity by 40 mAh/g in comparison to cells with unstructured electrodes.

Effect of Zr:Sn ratio in the PBLZST ceramic thick films on the energy storage characteristics

Pb0.91Ba0.06La0.02(Zr0.95−xSnxTi0.05)O3 (PBLZST, x = 0.325, 0.35, 0.375, 0.4) thick films are prepared by solid-state reaction method and flow-casting method. Trace Ba2+ content is introduced to PLZST which is effective in narrowing the hysteresis loop, lowering the Curie temperature point, and improving the fatigue characteristics. Besides that, Zr:Sn ratios are adjusted to study its influence on the material’s energy storage characteristics. PBLZST ceramics with different Zr:Sn ratios are all in tetragonal perovskite structure. The increase of Sn4+ content promotes miniaturization of crystal grain and contributes to stability of antiferroelectric phase, together with enhances the phase transition field strength and breakdown field strength of PBLZST ceramics. The PBLZST ceramic has high energy storage efficiency, which is more than 80%. The maximum effective energy storage density of PBLZST ceramics at 1.94 J/cm3 is obtained when x = 0.35, and their energy storage efficiency is 81.9%, which confirms that they are the potential materials in the pulse energy storage components.

Ultrasensitive flexible magnetoelectric sensor

Ever-evolving advances in flexible magnetic sensors are promising to fuel technological developments in the fields of touchless human–machine interaction, implantable medical diagnosis, and magnetoreception for artificial intelligence. However, the realization of highly flexible and extremely sensitive magnetic sensors remains a challenge. Here, we report a cost-effective, flexible, and ultra-sensitive heterostructural magnetoelectric (ME) sensor consisting of piezoelectric Pb(Zr0.52Ti0.48)O3 (PZT) thick films and Metglas foils. The flexible sensor exhibits a strong ME coefficient of 19.3 V cm−1 Oe−1 at low frequencies and 280.5 V cm−1 Oe−1 at resonance due to the exceptionally high piezoelectric coefficient d33 ∼ 72 pC N−1 of the constituent PZT thick films. The flexible ME sensor possesses not only ultrahigh sensitivities of 200 nT at low frequencies and 200 pT at resonance but also shows an excellent mechanical endurance. Through 5000 bending cycles (radii of ∼1 cm), the sensors showed no fatigue-induced performance degradation. This ultrasensitive flexible sensor provides a platform capable of sensing and responding to external magnetic fields and will find applications in soft robotics, wearable healthcare monitoring, and consumer electronics.

Large Energy Storage Density and Electrocaloric Strength of Pb <sub>0.97</sub>La <sub>0.02</sub>(Zr <sub>0.46-x</sub>Sn <sub>0.54</sub>Ti <sub>x</sub>)O <sub>3</sub> Antiferroelectric Thick Film Ceramics

Pb0.97La0.02(Zr0.46-xSn0.54Tix)O3 (PLZST, x=0.04, 0.06, 0.08, 0.15, and 0.18) antiferroelectric thick film ceramics were fabricated via a tape-casting approach. The energy storage performance and electrocaloric effect were investigated in terms of the measurements on the hysteresis loops and Maxwell relation. The maximum value of energy storage density of 5.2 J/cm3 and efficiency of 78.2 % were procured at 600 kV/cm in Pb0.97La0.02(Zr0.42-xSn0.54Ti0.04)O3 thick film ceramics at room temperature. In addition, the ECE was indirectly calculated using the Maxwell relation and the P-E loops as a function of temperature and electric field, a reversible adiabatic temperature change of ΔT=2.47 °C was presented in Pb0.97La0.02(Zr0.42-xSn0.54Ti0.04)O3 thick film ceramics at 500 kV/cm, corresponding to the calculated electrocaloric strength of 0.48 K(MV/m)-1. These results indicate that the PLZST thick film ceramics are promising for practical applications in high-power energy storage capacitors and solid-state refrigeration devices.

Development of Na0.5CoO2 Thick Film Prepared by Screen-Printing Process.

The Na0.5Co0.9Cu0.1O2 thick film with the same thermoelectric performance as a Na0.5CoO2 bulk was formed on an alumina substrate by the screen-printing process. The power factor exceeded 0.3 mW/K2m, with the resistivity of 3.8 mΩcm and the thermopower of 108 μV/K. The thick film without any cracks strongly adhered to the substrate. The high-quality thick film had been realized through the carefully designed and improved process, mixing NaCl to promote the anisotropic sintering of Na0.5Co0.9Cu0.1O2, inserting a CuO interlayer to adhere the film and substrate, and Co–Cu substituting Cu for Co to control the sintering temperature.

Textured Pb(Zr,Ti)O3-Pb[(Zn,Ni)1/3Nb2/3]O3 multilayer ceramics and their application to piezoelectric actuators

0.69Pb(Zr0.47Ti0.53)-0.31Pb[(Zn0.4Ni0.6)1/3Nb2/3]O3 (PZT-PZNN) thick films were textured at 950°C along the [001] direction using BaTiO3 (BT) platelets. The 80Ag/20Pd electrodes coated on the PZT-PZNN thick films considerably assisted the texturing of the thick film. PZT-PZNN thick films with 5 vol% BT seeds exhibited a large strain (0.33% at 4.0 kV/mm) and d33* (1,040 pm/V at 1.5 kV/mm). Because the variations in d33* and strain of the PZT-PZNN thick films were not explained by Rayleigh's law, the experimental formula, which fits the measured d33* and strain, was suggested. Multilayer ceramics (MLCs) comprising five layers of textured PZT-PZNN thick films were fabricated at 950°C. Cantilever-type actuators produced by textured PZT-PZNN MLCs exhibited a large acceleration (46.9 G) and displacement (10.5 mm) at 50 V, which were much larger than those (32.6 G and 7 mm) of the actuators produced by untextured MLCs. Therefore, textured piezoelectric thick film can considerably improve the actuating properties of piezoelectric actuators.

Effects of annealing temperature and pressure of vacuum infiltration on the electrical properties of Pb(Zr0.52Ti0.48)O3 thick films prepared via a modified sol–gel method

In this study, piezoelectric Pb(Zr0.52Ti0.48)O3(Lead Zirconate Titanate PZT) thick films were fabricated on Pt-coated Si substrates via a modified sol–gel method. The method involved a uniform dispersion of PZT-based powders in sol–gel solution. This modification increased single coating thickness, reduced coating time, and improved electrical characteristics. We found that the dielectric, ferroelectric, and piezoelectric properties of the films depended on microstructure and crystallinity. Diagram models were proposed to explain these results. The size of grains that filled the surface pores of the films increased with annealing temperature. Surface roughness decreased with grain size up to a point. However, excessively large grains increased surface roughness. A secondary phase formed at 750 °C. Excessively high pressure of vacuum infiltration caused the sol–gel solution to evaporate and accumulate on the film surface, affecting microstructure and crystallinity. The optimized films, obtained with an annealing temperature of 700 °C and a vacuum pressure of 0.073 MPa (according to the pumping time), had a dielectric constant of 1542 (at 1 kHz), a dielectric loss of 0.029 (at 1 kHz), a remanent polarization Pr of 39.8 μC/cm2 (at 350 kV/cm), and an effective piezoelectric coefficient d33,f of 93.6 pm/V.

Structural and electrical characterization of hydrothermally deposited piezoelectric (K,Na)(Nb,Ta)O3 thick films

(K0.89Na0.11)(Nb0.85Ta0.15)O3 thick films were epitaxially grown at 200 °C on (001)La:SrTiO3 and (001)cSrRuO3//(001)SrTiO3 substrates by hydrothermal method, and their crystal structures and electrical properties were investigated. Film thickness increased with deposition time and reached 6 µm in 10 h. High-temperature X-ray diffraction measurement showed that successive phase transitions from orthorhombic to tetragonal and from tetragonal to cubic phases take place at 120 and 400 °C, respectively. Microstructure analyses were performed by using electron microscopy, which revealed the existence of two types of stripe patterns with a width of 100 nm or less. In addition, scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy elemental mapping showed that Nb/(Nb + Ta) ratio of the deposited films abruptly changed around 700 nm in thickness. Annealing at 500 °C led to the reduction in leakage current density from 102 to 10–5 A/cm2 at 30 kV/cm, showing that annealing is an effective way to improve insulation. Relative dielectric constant (er) decreased linearly with increasing frequency, reaching 450 at 10 kHz. Polarization–electric field hysteresis loop and field-induced stain curve were measured by piezoelectric force microscopy, which showed remanent polarization (Pr) of 30 µC/cm2 and piezoelectric constant (d33,PFM) of 70 pm/V. These results demonstrate that (K,Na)(Nb,Ta)O3 thick films with superior electrical properties can be fabricated by the low-temperature deposition technique.

Effect of film thickness on dielectric properties and energy storage performance of Ba0.95Ca0.05Zr0.3Ti0.7O3 thick films prepared by tape casting

Free-standing Ba0.95Ca0.05Zr0.3Ti0.7O3 thick films with varying thicknesses (90–200 μm) were prepared by tape casting technology. The thick films exhibited dense microstructure with fine and uniform grains (~ 1 μm). The dielectric properties, dielectric breakdown strength, and energy storage performance of the thick films were examined. The dielectric properties of the thick films were essentially unaffected by changing film thickness. The thick films with varying thicknesses showed similar dielectric constant and loss values, ferroelectric phase transition behavior, and dielectric nonlinearity. In contrast, the dielectric breakdown strength and energy storage performance were substantially dependent on film thickness. The dielectric breakdown strength and recoverable energy storage density were increased with reducing film thickness, while the energy storage efficiency at an identical applied electric field was enhanced. The film with a thickness of 90 μm achieved the optimal energy storage performance among the specimens investigated, exhibiting a recoverable energy storage density of 1.1 J/cm3 and an energy storage efficiency of 81.7% at an electric field of 260 kV/cm. The thickness dependence of the dielectric breakdown strength and energy storage performance was explained with respect to presence of oxygen vacancies in the lattice.

Low thermal budget lead zirconate titanate thick films integrated on Si for piezo-MEMS applications

Piezoelectric cantilevers made from ferroelectric thick films are commonly used as key components in many prototypical piezo-MEMS devices, including sensors, micro-actuators and piezoelectric energy harvesters. In this work, transverse piezoelectric performance of rapid thermal annealed Pb(Zr0.53Ti0.47)O3 (PZT) thick film (~1-2 μm) were characterized. These films were sputtered on LaNiO3 buffered Pt/Ti/SiO2/(100) Si substrates at 350 °C followed by a rapid thermal process (RTP) with different annealing time (30 s to 15 min) at the high temperature end (700 °C), and then patterned into rectangular prism-shaped cantilevers. Such a two-step process yields highly (001)-oriented perovskite PZT films with good overall electrical properties (ferroelectric, dielectric and piezoelectric) close to those of an epitaxial PZT film, yet on a much reduced thermal budget. With the elementary and chemical valence information from EDS and XPS analysis, an optimal annealing time was determined for the PZT thick film cantilevers to have both an outstanding piezoelectric performance (actuating, sensing or energy harvesting), and a good compatibility with the Si technology (a brief exposure to a high temperature). This study promotes the integration of large piezoelectricity into Si-based MEMS.

Energy-storage properties of Sr-doped PLZST bulk ceramics and thick films

The dielectric and energy-storage properties of (Pb0.97−xSrxLa0.02)(Zr0.675Sn0.285Ti0.04)O3 (x = 0, 0.005, 0.01, 0.015) bulk ceramics and thick films were investigated. All samples are orthorhombic perovskite antiferroelectric phase and have dielectric temperature relaxation property. Sr-dopant can improve the stability of the antiferroelectric phase and increase the phase transition field, but cause a decrease in dielectric constant. Thick films have a higher maximum tolerable external electric field strength than bulk ceramics. Compared with undoped thick film, the forward phase transition field and the backward phase transition field of the 1.5% doped thick film increased by 32% and 27%, respectively. The maximum polarization of the 1.5% doped thick film is decreased by 17%. The largest recoverable energy-storage density was obtained in thick film with 1% Sr doping. The largest recoverable energy-storage density is 2.77 J/cm3, which is 9.4% higher than the undoped thick film ceramic and 477% higher than the bulk ceramic with 1% Sr doping. The high energy storage density indicates that the obtained thick film is promising for pulsed power capacitors.

Enhancement of energy storage and thermal stability of relaxor Pb0.92La0.08Zr0.52Ti0.48O3-Bi(Zn0.66Nb0.33)O3 thick films through aerosol deposition

Relaxor ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT 8/52/48) has been studied widely for applications to high energy storage capacitors because of its polarization-electric (P-E) field hysteresis. On the other hand, its energy storage characteristics are unsatisfactory because the dielectric properties deteriorate with temperature. In the present study, a dense nano-composite thick film (∼5 μm) was fabricated by the aerosol deposition (AD) of mixed powders of BZN [Bi(Zn0.66Nb0.33)O3] corresponding to 0, 5, and 10 at.% with lanthanum-doped lead zirconate titanate ceramics (PLZT) at room temperature, followed by post-annealing for crystallization recovery. The composition of 0.95(Pb0.92La0.08Zr0.52Ti0.48O3)-0.05Bi(Zn0.66Nb0.33O3) PLZT-BZN5 was made artificially, which accommodates the coexistence of two different phases, demonstrating superior energy storage performance. The 550°C-annealed PLZT-BZN5 film showed a superior energy density of 14.7 J/cm3 under an electric field of 1400 kV/cm and an efficiency of 81%. The PLZT-BZN5 film also exhibited low dielectric loss and improved temperature stability.

Antiferroelectric thick film grown on metal foils with fast discharge speed and excellent energy-storage properties

Antiferroelectric (AFE) Pb0.94La0.04Zr0.97Ti0.03O3 (PLZT) thick film was successfully fabricated on nickel foils by using sol–gel method. The film exhibits dense microstructure with low surface roughness and pure perovskite phase. It displays high dielectric constant of 433 at 100 kHz and room temperature, which is 28% larger than that on traditional silicon substrate. Calculated by polarization-field (P–E) hysteresis loop, the recoverable energy-storage density (Wrec) of 18.4 J/cm3 and the efficiency (Ƞ) value of 54% at 1400 kV/cm are obtained in the thick film. Measured by resistance–inductance–capacitance (RLC) circuit, the maximum pulsed discharge energy-storage density (Wdis) of 12.4 J/cm3 is found at the same electric field of 1400 kV/cm. Moreover, 90% of the energy is released in a short time of about 84 ns, displaying super-fast discharging characteristic. The AFE film with high discharge energy-storage density and fast discharge time provides strong potential for the application in modern electronics and electrical power systems.