Abstract SrRuO3 (SRO) thin (∼12 nm) films have been grown on KTaO3 (001) substrates by RF magnetron sputtering. The as-prepared films are under enormous in-plane tensile strain, which corresponds to the elastic energy of ∼1.5 MJ. Annealing in oxygen at 900 °C for 6 h relaxes strain, partially lowering the elastic energy. The surface topography shows a transition from granularity as the Ar+O2 pressure increases from 5 mTorr to 200 mTorr, with a simultaneous change in the average surface roughness from 4 nm to 0.8 nm. Annealing transforms the topography to island-type and enhances surface roughness. The films deposited at 5 mTorr are semiconducting, and annealing further enhances the resistivity. The ρ-T of films grown at 200 mTorr shows a metallic behavior with an inflection in the ρ-T at TC ∼ 150 K, FM transition. The low-temperature resistivity upturn shows the disordered nature of these films. The eq. ρ T = 1 σ 0 + a T 1 2 + a 1 T p 2 + b T α (p = 2 & α = 2) describes the transport behavior from 2 K to 300 K of 5 mTorr deposited films. In the 200 mTorr deposited film, the above eq. is valid at T < 95 K with p = 2 and α = 1.5. At TC < T ≤ 300 K, the ρ-T follows eq. ρ T = ρ 0 + ρ 1 T α with α = 1.3 and 1.5 for the as-grown and annealed films. The lower temperature ρ-T upturn appears to have contributions from the disorder-enhanced renormalized e-e interaction (REEI) and weak localization (WL) effects. The magnetoresistance behavior supports a substantial WL effect in the films grown at 200 mTorr. Our results establish a strong correlation between the nature of strain, surface topography, and carrier transport mechanisms.
Read full abstract