Nucleation Heat Treatment Research Articles

Effect of Preanneal Heat Treatment on Oxygen Precipitation in Epitaxial Silicon

AbstractSubstrate wafers used for fabrication of P/P+ epitaxial silicon wafers were preanneal heat treated at 650°C in nitrogen ambients prior to the epitaxial deposition process for various periods up to 300 minutes. Subsequently, epitaxial wafers were subjected to CMOS simulation heat treatments. Postepitaxial nucleation heat treatment at 750°C in nitrogen ambient was also done on some epitaxial wafers. The results shows that preanneal heat treatment can preserve precipitate nuclei from dissolution during the epitaxial deposition process and lead to a high bulk defect density. These results also indicate the effect of the thermal history and spatial location in the grown crystal on the bulk defect formation.

Surface and bulk crystallization in non-isothermal devitrification of glasses

The surface and bulk crystallization of Li 2O · 2 SiO 2 glass has been studied by differential thermal analysis and the influence of the specific surface area of the sample and the nucleation heat treatment on the crystallization kinetics is pointed out. The kinetic parameters were also evaluated from the DTA curves and related to the crystallization mechanism. The results agree well with the isothermal data reported in the literature.