NOT Gate Research Articles

Coherent optical spin Hall transport for polaritonics at room temperature.

Spin or valley degrees of freedom hold promise for next-generation spintronics. Nonetheless, the macroscopic coherent spin current formations are still hindered by rapid dephasing due to electron scattering, specifically at room temperature. Exciton polaritons offer excellent platforms for spin-optronic devices via the optical spin Hall effect. However, this effect could neither be unequivocally observed at room temperature nor be exploited for practical spintronic devices due to the presence of strong thermal fluctuations or large linear spin splitting. Here we report the observation of room-temperature optical spin Hall effect of exciton polaritons, with the spin current flow over 60 μm in a formamidinium lead bromide perovskite microcavity. We provide direct evidence of long-range coherence in the flow of polaritons and the spin current carried by them. Leveraging the spin Hall transport of polaritons, we further demonstrate two polaritonic devices, namely, a NOT gate and a spin-polarized beamsplitter, advancing the frontier of room-temperature polaritonics in perovskite microcavities.

Photo‐Curable Fluorinated High‐k Polyimide Dielectrics by Polar Side Substitution Effect for Low‐Voltage Operating Flexible Printed Electronics

AbstractPolyimide‐based dielectric films are widely used in various thin film devices including organic field‐effect transistors (OFETs) owing to their promising thermal/chemical stability, mechanical flexibility, and insulating properties. On the other hand, considerable attention is paid to lowering the process temperature to allow coating on plastic substrates because high‐temperature annealing (≈200 °C) is usually required to convert precursors to polyimide films with those excellent properties. In addition, polyimide‐based dielectric films have low dielectric constants (k) (<4). Therefore, modifying the k properties of polyimide is a critical issue for applications as an insulating thin film for practical transistors. This paper reports a new type of polyimide‐based gate dielectric comprising methacryloyl moiety (PI‐MA) as a side chain for photo‐pattern/processability and high‐k properties. This study shows that the photocured PI‐MA thin films show excellent insulating properties (leakage current densities < 10−8 A cm⁻2 at 4 MV cm⁻1) and high‐k properties (≈8) even without a post‐annealing process. Finally, the use of PI‐MA in printed field‐effect transistors results in high performance with low‐voltage operation (within 5 V) and integrated logic‐gate devices (NOT, NAND, and NOR gates).

Rewiring native post-transcriptional global regulators to achieve designer, multi-layered genetic circuits

As synthetic biology expands, creating “drag-and-drop” regulatory tools that can achieve diverse regulatory outcomes are paramount. Herein, we develop a approach for engineering complex post-transcriptional control by rewiring the Carbon Storage Regulatory (Csr) Network of Escherichia coli. We co-opt native interactions of the Csr Network to establish post-transcriptional logic gates and achieve complex bacterial regulation. First, we rationally engineer RNA-protein interactions to create a genetic toolbox of 12 BUFFER Gates that achieves a 15-fold range of expression. Subsequently, we develop a Csr-regulated NOT Gate by integrating a cognate 5’ UTR that is natively Csr-activated into our platform. We then deploy the BUFFER and NOT gates to build a bi-directional regulator, two input Boolean Logic gates OR, NOR, AND and NAND and a pulse-generating circuit. Last, we port our Csr-regulated BUFFER Gate into three industrially relevant bacteria simply by leveraging the conserved Csr Network in each species.

High-throughput screen to identify and optimize NOT gate receptors for cell therapy.

Logic-gated engineered cells are an emerging therapeutic modality that can take advantage of molecular profiles to focus medical interventions on specific tissues in the body. However, the increased complexity of these engineered systems may pose a challenge for prediction and optimization of their behavior. Here we describe the design and testing of a flow cytometry-based screening system to rapidly select functional inhibitory receptors from a pooled library of candidate constructs. In proof-of-concept experiments, this approach identifies inhibitory receptors that can operate as NOT gates when paired with activating receptors. The method may be used to generate large datasets to train machine learning models to better predict and optimize the function of logic-gated cell therapeutics.

Design of Ultra-Compact and Multifunctional Optical Logic Gate Based on Sb2Se3-SOI Hybrid Platform.

Optical logic devices are essential functional devices for achieving optical signal processing. In this study, we design an ultra-compact (4.92 × 2.52 μm2) reconfigurable optical logic gate by using inverse design method with DBS algorithm based on Sb2Se3-SOI integrated platform. By selecting different amorphous/crystalline distributions of Sb2Se3 via programmable electrical triggers, the designed structure can switch between OR, XOR, NOT or AND logic gate. This structure works well for all four logic functions in the wavelength range of 1540-1560 nm. Especially at the wavelength of 1550 nm, the Contrast Ratios for XOR, NOT and AND logic gate are 13.77 dB, 11.69 dB and 3.01 dB, respectively, indicating good logical judgment ability of the device. Our design is robust to a certain range of fabrication imperfections. Even if performance weakens due to deviations, improvements can be obtained by rearranging the configurations of Sb2Se3 without reproducing the whole device.

All-optical temporal logic gates in localized exciton polaritons

Exciton polaritons—quasi-particle excitations consisting of strongly coupled photons and excitons—present fascinating possibilities for photonic circuits, owing to their strong nonlinearity, ultrafast reaction times and their ability to form macroscopic quantum states at room temperature via non-equilibrium condensation. Past implementations of transistors and logic gates with exciton polaritons have been mostly realized using the spatial propagation of polariton fluids, which place high demands on the fabrication of the microcavities and typically require complex manipulations. In this work we have implemented the full set of logical gate functionalities (that is, temporal AND, OR and NOT gates) in localized exciton polaritons at room temperature, on the basis of precisely controlling the interplay between polariton condensate and exciton reservoir dynamics, using a two-pulse excitation scheme. The dynamics intrinsically covers the cascadability required by the logical operations, enabling efficient information processing without the need for spatial flow. The temporal polariton logic gates demonstrate advantages in ultrafast switching, universality and simplified compatibility with other dimensional controls, showing great potential for building polariton logic networks in strongly coupled light–matter systems.

A Multienzyme Logic H+ and Na+ Biotransducer.

Sodium ions and protons regulate various fundamental processes at the cell and tissue levels across all biological kingdoms. It is therefore pivotal for bioelectronic devices, such as biosensors and biotransducers, to control the transport of these ions through biological membranes. Our study explores the regulation of proton and sodium concentrations by integrating an Na+-type ATP synthase, a glucose dehydrogenase (GDH), and a urease into a multienzyme logic system. This system is designed to operate using various chemical control input signals, while the output current corresponds to the local change in proton or sodium concentrations. Therein, a H+ and Na+ biotransducer was integrated to fulfill the roles of signal transducers for the monitoring and simultaneous control of Na+ and H+ levels, respectively. To increase the proton concentration at the output, we utilized GDH driven by the inputs of glucose and nicotinamide adenine dinucleotide (NAD+), while recorded the signal change from the biotransducer, together acting as an AND enzyme logic gate. On the contrary, we introduced urease enzyme which hydrolyzed urea to control the decrease in proton concentration, serving as a NOT gate and reset. By integrating these two enzyme logic gates we formed a simple multienzyme logic system for the control of proton concentrations. Furthermore, we also demonstrate a more complex, Na+-type ATP synthase-urease multienzyme logic system, controlled by the two different inputs of ADP and urea. By monitoring the voltage of the peak current as the output signal, this logic system acts as an AND enzyme logic gate. This study explores how multienzyme logic systems can modulate biologically important ion concentrations, opening the door toward advanced biological on-demand control of a variety of bioelectronic enzyme-based devices, such as biosensors and biotransducers.

Room temperature, cascadable, all-optical polariton universal gates

Today, almost all information processing is performed using electronic logic circuits operating at several gigahertz frequency. All-optical logic holds the promise to allow for up to three orders of magnitude higher speed. Whereas essential all-optical transistor functionalities were demonstrated across a range of platforms, utilising them to implement a complete Boolean logic gate set and in particular negation, i.e. switching off an optical signal with another, weaker, optical signal, poses a major challenge. Here, we realize a cascadable NOT gate by introducing the concept of non-ground-state polariton amplification in organic semiconductor microcavities under non-resonant optical excitation. We unravel the importance of vibron-mediated stimulated scattering in room temperature operation of the inverter. Moreover, we extend the concept to a multi-input universal NOR logic gate, where in the presence of any of the input signals non-ground-state amplification supersedes spontaneous ground-state condensation, resulting in a NOR gate with ~1 ps switching time. The realisation of an ultrafast universal logic gate constitutes an essential step for more complex optical circuitry that could boost information processing applications.

Inverse design of ultra-compact optical logic gates by genetic algorithm

Optical logic gates play a crucial role in all-optical signal processing systems. Traditional methods of designing logic gates require manual adjustment of structural parameters. In this paper, we utilize a genetic algorithm for inverse design, and the optical AND, OR, and NOT logic gates are achieved on a silicon platform at the working wavelength of 1.55 μm. The total area of the logic gates is fixed at 2.2 μm × 2.2 μm, convenient to be integrated with other functional devices, the optimized structural parameters are acquired for different logic gates and the contrast ratios of the OR, AND, and NOT gates are 8.55, 5.32, and 4.14 dB, respectively. The design is characterized by a compact structure, high contrast, and a high degree of freedom, offering a valuable reference for photonic integrated circuits.

Design insights into a junctionless nanosheet FET (JL-NSFET) for switching and Analog/RF applications: Device to circuit level assessment

- The advent in semiconductor technology paved the way for electronic industry to place in front row. The nanosheet (NS) device is a type gate all around (GAA) architecture provides an excellent gate electrostatic to suppress the short channel effects (SCEs) and scale it further below sub-7nm technology node. This paper provides a complete design insight from device to circuit of a two sheet NSFET with geometrical variations. All digital and analog/RF parameters are extracted and analyzed based on gate length (LG), sheet thickness (TNS), sheet width (WNS), and spacer material variations. As LG is varied from 8 nm to 12 nm, ION/IOFF is enhanced from 0.249 × 108 to 2.86 × 108 due to improved gate control over the channel region which is also reflected in DIBL to 40.82 % whereas, at lower LG analog/RF metrics are better. The TNS play a vital role in device characteristics, as TNS decreases the chance of interaction of electric field from source to drain decreases owing to full volume conduction and thereby ameliorated performance of JL NSFET. As TNS is varied from 7 nm to 5 nm, all electrical characteristics are improved and analog/RF parameters gm, Av, fT, TFP and GTFP are improved to 10.3 %, 18.4 %, 12.1 % 18.5 % and 54.04 %, respectively. Increase in WNS from 10 nm to 20 nm results into increased effective width of a device, it leads to higher ION current which further impacts on electrical and analog/RF parameters. The DIBL, gm, fT, GFP, TFP and GTFP are enhanced to 63.7 %, 37.9 %, 34.9 %, 9.7 %, 33.5 %, 9.1 %, respectively. The spacer materials are varying from Al2O3 (k = 18), HfO2 (k = 22), ZrO2 (k = 25) to TiO2 (k = 44), the electrical characteristics are better at higher-k whereas analog/RF performances are superior at lower-k. Further, digital circuit elements NOT, NAND and NOR gates are designed, simulated and the delays are examined as 4.25ps, 6.45ps and 5.12ps, respectively. The NML and NMH of NOT gate are noticed as 295 mV and 280 mV at 0.7 V of supply voltage. Furthermore, a common source (CS) amplifier is also simulated and gain of 3.3 is noticed. The aforementioned analysis revels the JL NSFET is best suitable candidate for future nanoscale applications.

High fidelity Not gate on superconduting phase qubit

NOT gate is one of the basic units in quantum computing. While it suffers from the noise during the complex operation. In this paper, we simulate the NOT gate on the superconducting phase qubit and solve the noise problem by maximizing the impact of noise cancellation. We first extract the noise term from the Hamiltonian and reset it to zero. Then we give two kinds of pulses based on the non-noise term for the quantum gate. By using these pulses, the fidelity would be improved and benefit quantum computing.

Functional predictability of universal gene circuits in diverse microbial hosts

AbstractAlthough the principles of synthetic biology were initially established in model bacteria, microbial producers, extremophiles and gut microbes have now emerged as valuable prokaryotic chassis for biological engineering. Extending the host range in which designed circuits can function reliably and predictably presents a major challenge for the concept of synthetic biology to materialize. In this work, we systematically characterized the cross‐species universality of two transcriptional regulatory modules—the T7 RNA polymerase activator module and the repressors module—in three non‐model microbes. We found striking linear relationships in circuit activities among different organisms for both modules. Parametrized model fitting revealed host non‐specific parameters defining the universality of both modules. Lastly, a genetic NOT gate and a band‐pass filter circuit were constructed from these modules and tested in non‐model organisms. Combined models employing host non‐specific parameters were successful in quantitatively predicting circuit behaviors, underscoring the potential of universal biological parts and predictive modeling in synthetic bioengineering.

A Hardware-Based Orientation Detection System Using Dendritic Computation

Studying how objects are positioned is vital for improving technologies like robots, cameras, and virtual reality. In our earlier papers, we introduced a bio-inspired artificial visual system for orientation detection, demonstrating its superiority over traditional systems with higher recognition rates, greater biological resemblance, and increased resistance to noise. In this paper, we propose a hardware-based orientation detection system (ODS). The ODS is implemented by a multiple dendritic neuron model (DNM), and a neuronal pruning scheme for the DNM is proposed. After performing the neuronal pruning, only the synapses in the direct and inverse connections states are retained. The former can be realized by a comparator, and the latter can be replaced by a combination of a comparator and a logic NOT gate. For the dendritic function, the connection of synapses on dendrites can be realized with logic AND gates. Then, the output of the neuron is equivalent to a logic OR gate. Compared with other machine learning methods, this logic circuit circumvents floating-point arithmetic and therefore requires very little computing resources to perform complex classification. Furthermore, the ODS can be designed based on experience, so no learning process is required. The superiority of ODS is verified by experiments on binary, grayscale, and color image datasets. The ability to process data rapidly owing to advantages such as parallel computation and simple hardware implementation allows the ODS to be desirable in the era of big data. It is worth mentioning that the experimental results are corroborated with anatomical, physiological, and neuroscientific studies, which may provide us with a new insight for understanding the complex functions in the human brain.

Singleton {NOT} and Doubleton {YES; NOT} Gates Act as Functionally Complete Sets in DNA-Integrated Computational Circuits.

A functionally complete Boolean operator is sufficient for computational circuits of arbitrary complexity. We connected YES (buffer) with NOT (inverter) and two NOT four-way junction (4J) DNA gates to obtain IMPLY and NAND Boolean functions, respectively, each of which represents a functionally complete gate. The results show a technological path towards creating a DNA computational circuit of arbitrary complexity based on singleton NOT or a combination of NOT and YES gates, which is not possible in electronic computers. We, therefore, concluded that DNA-based circuits and molecular computation may offer opportunities unforeseen in electronics.

Flexible High-Temperature MoS2 Field-Effect Transistors and Logic Gates.

High-temperature-resistant integrated circuits with excellent flexibility, a high integration level (nanoscale transistors), and low power consumption are highly desired in many fields, including aerospace. Compared with conventional SiC high-temperature transistors, transistors based on two-dimensional (2D) MoS2 have advantages of superb flexibility, atomic scale, and ultralow power consumption. However, MoS2 cannot survive at high temperature and drastically degrades above 200 °C. Here, we report MoS2 field-effect transistors (FETs) with top/bottom hexagonal boron nitride (h-BN) encapsulation and graphene electrodes. With the protection of the h-BN/h-BN structure, the devices can survive at much higher temperature (≥500 °C in air) than those of the MoS2 devices ever reported, which provides us an opportunity to explore the electrical properties and working mechanism of MoS2 devices at high temperature. Unlike the relatively low-temperature situation, the on/off ratio and subthreshold swing of MoS2 FETs show drastic variation at elevated temperature due to the injection of thermal emission carriers. Compared with metal electrode, devices with a graphene electrode demonstrate superior performance at high temperature (∼1-order-larger current on/off ratio, 3-7 times smaller subthreshold swing, and 5-9 times smaller threshold voltage shift). We further realize that the flexible CMOS NOT gate based on the above technique, and demonstrate logic computing at 550 °C. This work may stimulate the fundamental research of properties of 2D materials at high temperature, and also creates conditions for next-generation flexible harsh-environment-resistant integrated circuits.

Bioinspired carbon nanotube-based nanofluidic ionic transistor with ultrahigh switching capabilities for logic circuits.

The voltage-gated ion channels, also known as ionic transistors, play substantial roles in biological systems and ion-ion selective separation. However, implementing the ultrafast switchable capabilities and polarity switching of ionic transistors remains a challenge. Here, we report a nanofluidic ionic transistor based on carbon nanotubes, which exhibits an on/off ratio of 104 at operational gate voltage as low as 1 V. By controlling the morphology of carbon nanotubes, both unipolar and ambipolar ionic transistors are realized, and their on/off ratio can be further improved by introducing an Al2O3 dielectric layer. Meanwhile, this ionic transistor enables the polarity switching between p-type and n-type by controlled surface properties of carbon nanotubes. The implementation of constructing ionic circuits based on ionic transistors is demonstrated, which enables the creation of NOT, NAND, and NOR logic gates. The ionic transistors are expected to have profound implications for low-energy consumption computing devices and brain-machine interfacing.

A new CMOS-memristor based D-latch with fewer components

In order to study the function of memristor in new devices, a new D-latch is proposed in this paper, which is composed of threshold-type memristor, transistor, resistor and NOT gate. The proposed D-latch uses fewer components than previous. The transistor controls the on-off of the signal, and NOT gate changes the resistance state of memristor. The voltage divider circuit composed of memristor and resistor realizes the latching function. To verify the D-latch, a modified threshold-type memristor emulator circuit (MEC) is proposed. The proposed MEC is composed of operational amplifier, multiplier and second-generation current conveyor. The MEC is a voltage-controlled memristor that can realize floating input. The equivalent resistance of MEC has two kinds of high resistance and low resistance, which change with the polarity of the voltage. The MEC has the characteristic of non-volatility, that is, the resistance state of the circuit remains when the input signal is withdrawn. Through simulation analysis and experimental verification, both circuits have good performance.

Ultraflexible, High-Performance Transistors and Logic Circuits on Biocompatible Polylactic Acid (PLA) Substrate.

Wearable and implantable devices have gained significant popularity, playing a crucial role in smart healthcare and human-machine interfaces, which necessitates the development of more complex electronic devices and circuits on biocompatible flexible materials. Polylactic acid (PLA) stands out due to its biodegradability, cost-effectiveness, and low immunogenicity. In this study, we utilize a solution-based spin-coating method to produce high-quality PLA thin films, serving as substrates for the fabrication of thin-film transistors (TFTs) in which the dielectric layer material is silicon dioxide, the channel layer material is IGZO, and the gate, drain, and source material is ITO at low temperatures (<40 °C) through a shadow masking technique. The resulting PLA-TFT devices exhibited remarkable flexibility, biocompatibility, and impressive electrical characteristics, including a charge carrier mobility of 27.81 cm2/(V s), a subthreshold swing of 162.8 mV/decade, and an ON/OFF current ratio of up to 1 × 106, and maintained performance under various deformations. We successfully constructed fundamental logic gate circuits using PLA-TFTs, including AND, OR, and NOT gates, which effectively performed logical functions and demonstrated stability under diverse bending conditions. These research findings provide valuable support for future endeavors in fabricating intricate logic circuits and realizing advanced functionalities on biocompatible flexible materials.

Monolithically integrated high-density vertical organic electrochemical transistor arrays and complementary circuits.

Organic electrochemical transistors (OECTs) can be used to create biosensors, wearable devices and neuromorphic systems. However, restrictions in the micro- and nanopatterning of organic semiconductors, as well as topological irregularities, often limit their use in monolithically integrated circuits. Here we show that the micropatterning of organic semiconductors by electron-beam exposure can be used to create high-density (up to around 7.2 million OECTs per cm2) and mechanically flexible vertical OECT arrays and circuits. The energetic electrons convert the semiconductor exposed area to an electronic insulator while retaining ionic conductivity and topological continuity with the redox-active unexposed areas essential for monolithic integration. The resulting p- and n-type vertical OECT active-matrix arrays exhibit transconductances of 0.08-1.7 S, transient times of less than 100 μs and stable switching properties of more than 100,000 cycles. We also fabricate vertically stacked complementary logic circuits, including NOT, NAND and NOR gates.

Polarization-based all-optical logic gates using diffractive neural networks

Optical logic operations are an essential part of optical computing. The inherent stability and low susceptibility of polarization to the external environment make it a suitable choice for acting as the logical state in computational tasks. Traditional polarization-based optical logic devices often rely on complex cascading structures to implement multiple logic gates. In this work, by leveraging the framework of deep diffractive neural networks (D2NN), we proposed a uniform approach to designing polarization-encoded all-optical logic devices with simpler and more flexible structures. We have implemented AND, OR, NOT, NAND, and NOR gates, as well as High-order Selector and Low-order Selector. These polarization-based all-optical logic devices using D2NN offer passive nature, stability, and high extinction ratio features, paving the way for a broader exploration of optical logic computing in the future.