Normal Metal Island Research Articles

Initial experimental results on a superconducting-qubit reset based on photon-assisted quasiparticle tunneling

We present here our recent results on qubit reset scheme based on a quantum-circuit refrigerator (QCR). In particular, we use the photon-assisted quasiparticle tunneling through a superconductor–insulator–normal-metal–insulator–superconductor junction to controllably decrease the energy relaxation time of the qubit during the QCR operation. In our experiment, we use a transmon qubit with dispersive readout. The QCR is capacitively coupled to the qubit through its normal-metal island. We employ rapid, square-shaped QCR control voltage pulses with durations in the range of 2–350 ns and a variety of amplitudes to optimize the reset time and fidelity. Consequently, we reach a qubit ground-state probability of roughly 97% with 80-ns pulses starting from the first excited state. The qubit state probability is extracted from averaged readout signal, where the calibration is based on Rabi oscillations, thus not distinguishing the residual thermal population of the qubit.

Heat rectification via a superconducting artificial atom

In developing technologies based on superconducting quantum circuits, the need to control and route heating is a significant challenge in the experimental realisation and operation of these devices. One of the more ubiquitous devices in the current quantum computing toolbox is the transmon-type superconducting quantum bit, embedded in a resonator-based architecture. In the study of heat transport in superconducting circuits, a versatile and sensitive thermometer is based on studying the tunnelling characteristics of superconducting probes weakly coupled to a normal-metal island. Here we show that by integrating superconducting quantum bit coupled to two superconducting resonators at different frequencies, each resonator terminated (and thermally populated) by such a mesoscopic thin film metal island, one can experimentally observe magnetic flux-tunable photonic heat rectification between 0 and 10%.

Cold-Electron Bolometer as a 1-cm-Wavelength Photon Counter

We investigate theoretically the possibility of using the cold-electron bolometer (CEB) as a counter for 1-cm-wavelength (30-GHz) photons. To reduce the flux of photons from the environment that interact with the detector, the bath temperature is assumed to be below 50 mK. At such temperatures, the time interval between two subsequent photons of 30 GHz that hit the detector is more than 100 h, on average, for a frequency window of 1 MHz. Such temperatures allow the observation of the physically significant photons produced in rare events, such as axion conversion (or Primakoff conversion) in a magnetic field. We present the general formalism for the detector's response and noise, together with numerical calculations for proper experimental setups. We observe that the current-biased regime is favorable due to lower noise and allows for photon counting at least below 50 mK. For the experimental setups investigated here, the voltage-biased CEBs may also work as photon counters but with less accuracy and, eventually, may require smaller volumes of the normal-metal island.

On-chip cooling by heating with superconducting tunnel junctions

Heat management and refrigeration are key concepts for nanoscale devices operating at cryogenic temperatures. The design of an on-chip mesoscopic refrigerator that works thanks to the input heat is presented, thus realizing a solid-state implementation of the concept of cooling by heating. The system consists of a circuit featuring a thermoelectric element based on a ferromagnetic insulator-superconductor tunnel junction (N-FI-S) and a series of two normal metal-superconductor tunnel junctions (SINIS). The N-FI-S element converts the incoming heat in a thermovoltage, which is applied to the SINIS, thereby yielding cooling. The cooler's performance is investigated as a function of the input heat current for different bath temperatures. We show that this system can efficiently employ the performance of SINIS refrigeration, with a substantial cooling of the normal metal island. Its scalability and simplicity in the design makes it a promising building block for low-temperature on-chip energy management applications.

Effect of quantum fluctuations on the critical supercurrent through a mesoscopic normal-metal island

We consider the transport properties of a single-electron transistor consisting of a diffusive normal-metal island and superconducting electrodes. We show that the interplay of a dissipative impedance of the gate electrode, a weak magnetic field, and a charging energy of the island causes a suppression of the critical supercurrent of the transistor. When the device is voltage biased, pumping of single electrons can be achieved by a periodic modulation of the gate voltage. We derive the analytic expressions for the error rates and show that they are suppressed by the applied magnetic field.

Phase-driven charge manipulation in Hybrid Single-Electron Transistor

Phase-tunable hybrid devices, built upon nanostructures combining normal metal and superconductors, have been the subject of intense studies due to their numerous combinations of different charge and heat transport configurations. They exhibit solid applications in quantum metrology and coherent caloritronics. Here we propose and realize a new kind of hybrid device with potential application in single charge manipulation and quantized current generation. We show that by tuning superconductivity on two proximized nanowires, coupled via a Coulombic normal-metal island, we are able to control its charge state configuration. This device supports a one-control-parameter cycle being actuated by the sole magnetic flux. In a voltage biased regime, the phase-tunable superconducting gaps can act as energy barriers for charge quanta leading to an additional degree of freedom in single electronics. The resulting configuration is fully electrostatic and the current across the device is governed by the quasiparticle populations in the source and drain leads. Notably, the proposed device can be realized using standard nanotechniques opening the possibility to a straightforward coupling with the nowadays well developed superconducting electronics.

Superconducting Quantum Interference Single-Electron Transistor

We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the density of states of a nanosized metallic wire can be exploited as an efficient tunable energy barrier which enables charge pumping configurations with enhanced functionalities. This control parameter strongly affects the charging landscape of a normal metal island with non-negligible Coulombic energy. Under a suitable evolution of a time-dependent magnetic flux the structure behaves likewise a turnstile for single electrons in a fully electrostatic regime.

Effect of photon-assisted Andreev reflection in the accuracy of a SINIS turnstile

We consider a hybrid single-electron transistor constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (SINIS), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.

Temperature dependence of single-electron pumping using a SINIS turnstile

A quantum electric current standard is the last missing piece of the quantum metrology triangle. A suitable candidate for realizing this quantum current standard is a single-electron pumping device based on a superconductor/insulator/normal metal/insulator/superconductor (SINIS) turnstile. Here, we show the temperature dependence of the single-electron pumped current of a SINIS turnstile. As the operating temperatures are increased, the current plateaus of the single-electron pumping tilt because of increased back tunneling, which originates from the thermal broadening of energy levels in the normal metal island of the SINIS turnstile. Hence, we find that to use a SINIS turnstile for the current standard at more than 300mK, it is necessary to increase the superconducting energy gaps of the lead material and the charging energy of the island.

Tunneling Rates of Electron Pumping in the R-SINIS Transistor

We consider the influence of the electromagnetic fluctuations on the transport properties of a hybrid single electron transistor, consisting of superconducting electrodes and a normal-metal island, when operated as a turnstile. We derive the analytic expressions for the rates near the thresholds of single electron tunneling, Andreev reflection, and Cooper-pair–electron cotunneling processes. These results show that the dissipative on-chip impedance suppresses the rates of the undesirable higher-order tunneling processes much stronger than the single electron tunneling which can therefore be utilized to increase the accuracy of such a device in quantum metrological applications.

Impact of non-idealities on the conductance characteristics of superconductor-insulator-normal metal-insulator-superconductor tunnel junctions

We have investigated the effect of asymmetry in tunnelling resistance of individual normal metal-insulator-superconductor (NIS) tunnel junctions that constitute a SINIS pair, both experimentally and theoretically. Ours results clearly demonstrate that any finite asymmetry in the tunnelling resistance gives rise to an excess current, as compared to its symmetric counterpart, both below and around the gap edge. The signature of this excess current is visible almost up to the critical temperature. We find that this apparent broadening of the density of states is purely electrical in origin. Our calculations also show that any finite resistance that is in series with the tunnelling resistance, such as the resistance of normal metal island or the line resistance in case of two probe measurements, leads to a suppression of the conductance maxima at the gap edge. This is a manifestation of the finite voltage drop across the series resistor. Our experimental results validate our theoretical prediction.

Theory of temperature fluctuation statistics in superconductor-normal metal tunnel structures

We describe the statistics of temperature fluctuations in a SINIS structure, where a normal metal island (N) is coupled by tunnel junctions (I) to two superconducting leads (S). We specify conditions under which this structure exhibits manifestly non-Gaussian fluctuations of temperature. We consider both the Gaussian and non-Gaussian regimes of these fluctuations, and the current fluctuations that are caused by the fluctuating temperature. We also describe a measurement setup that could be used to observe the temperature fluctuations.

Manifestly Non-Gaussian Fluctuations in Superconductor-Normal Metal Tunnel Nanostructures

We propose a mesoscopic setup which exhibits strong and manifestly non-Gaussian fluctuations of energy and temperature when suitably driven out of equilibrium. The setup consists of a normal metal island (N) coupled by tunnel junctions (I) to two superconducting leads (S), forming a SINIS structure, and is biased near the threshold voltage for quasiparticle tunneling, eV≈2Δ. The fluctuations can be measured by monitoring the time-dependent electric current through the system. This makes the setup suitable for the realization of feedback schemes which can be used to stabilize the temperature to the desired value.

Single-Electronic Radio-Frequency Refrigerator

We demonstrate experimentally that a hybrid single-electron transistor with superconducting leads and a normal-metal island can be refrigerated by an alternating voltage applied to the gate electrode. The simultaneous measurement of the dc current induced by the rf gate through the device at a small bias voltage serves as an in situ thermometer.

Quantized current of a hybrid single-electron transistor with superconducting leads and a normal-metal island

We discuss the operation of the superconductor–insulator–normal-metal–insulator–superconductor (SINIS) turnstile. This voltage-biased hybrid single-electron transistor (SET) provides current quantization even with only one radio-frequency (rf) control parameter, namely the gate voltage of the single island. We give an overview of the main error mechanisms of the turnstile and consider its feasibility as a quantum current standard. We also present experimental results of pumping with the SINIS structure which show decreased leakage current compared to earlier measurements with the opposite NISIN structure.

Heat Transistor: Demonstration of Gate-Controlled Electronic Refrigeration

We present experiments on a superconductor-normal-metal electron refrigerator in a regime where single-electron charging effects are significant. The system functions as a heat transistor; i.e., the heat flux out from the normal-metal island can be controlled with a gate voltage. A theoretical model developed within the framework of single-electron tunneling provides a full quantitative agreement with the experiment. This work serves as the first experimental observation of Coulombic control of heat transfer and, in particular, of refrigeration in a mesoscopic system.

Exchange effects on electron transport through single-electron spin-valve transistors

We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox model for Coulomb blockade and we allow for noncollinear lead magnetization directions. Two distinct exchange mechanisms that have been discussed in the literature are shown to be of comparable strength and are taken into account on equal footing. We present results for the linear conductance as a function of gate voltage and magnetic configuration, and discuss the response of the system to applied magnetic fields.

Dynamics of thin-film spin-flip transistors with perpendicular source-drain magnetizations

A ``spin-flip transistor'' is a lateral spin valve consisting of ferromagnetic source-drain contacts to a thin-film normal-metal island with an electrically floating ferromagnetic base contact on top. We analyze the dc-current-driven magnetization dynamics of spin-flip transistors in which the source-drain contacts are magnetized perpendicularly to the device plane by magnetoelectronic circuit theory and the macrospin Landau-Lifshitz-Gilbert equation. Spin-flip scattering and spin pumping effects are taken into account. We find a steady-state rotation of the base magnetization at GHz frequencies that is tunable by the source-drain bias. We discuss the advantages of the lateral structure for high-frequency generation and actuation of nanomechanical systems over recently proposed nanopillar structures.

Response time of a thermometer based on normal metal–insulator–superconductor (NIS) tunnel junctions

We have measured the thermal response of a superconductor–normal metal–superconductor (SINIS) tunnel junction structure at substrate temperature ∼60 mK by directly heating the electron system in the normal metal island. In our structure, we find the response time is determined by the electron–phonon coupling in the electron temperature range 300– 600 mK . By using AC heating, the cut-off frequency caused by this response time has been measured, showing that SINIS structures operate as a thermometer up to a few MHz in this temperature range.

Spin–flip transistor

The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be controlled by the magnetization of the base reservoirs up to distances of the order of the spin–flip diffusion length.