Recently, the electronic topology of CoSi has been reported to be present at three nodal points (two at Γ (G1, G2) and one at R (R1)) in the band structure. Considering this, we present a study where various transport coefficients are investigated by using first-principle based DFT method for the temperature (T) range 40-300 K. For the chemical potential (μ) corresponding to energies of these nodal points and at the Fermi level (EF), 3D constant energy surfaces are constructed. They have shown that the number of states available at energies of these nodal points and the EF is largest for R1 point and least for G1 point at T = 0 K. Electrical conductivity per unit relaxation time(σ/τ) and electronic thermal conductivity per unit relaxation time(κ0) have also shown similar results at different μ with rise in T. For instance, at T = 100 K, σ/τ∼0.13×1020Ω−1m−1s−1 at G1 whereas its value reaches ∼0.18×1020Ω−1m−1s−1 at R1 nodal point. However, Seebeck coefficient (S) is largest for G2 and least for G1 nodal point at any given T. The values of S are obtained to be positive at the μ corresponding to the G2, R1 and EF (except G1) which is increasing with the rise in T. Also, the dominant charge carriers at G1 point are found to be electrons for T < 225 K whereas for T > 225 K, the charge carriers are obtained to be dominated by holes. Furthermore, the doping concentrations have also been calculated for G1 (electron doping ∼2.25×1022 cm−3), G2 and R1 points (hole doping ∼4.10×1020 cm−3 and 7.22 × 1022 cm−3, respectively).