Nonlinear Optical Signal Processing Research Articles

Parity-time symmetry enabled ultra-efficient nonlinear optical signal processing

Nonlinear optical signal processing (NOSP) has the potential to significantly improve the throughput, flexibility, and cost-efficiency of optical communication networks by exploiting the intrinsically ultrafast optical nonlinear wave mixing. It can support digital signal processing speeds of up to terabits per second, far exceeding the line rate of the electronic counterpart. In NOSP, high-intensity light fields are used to generate nonlinear optical responses, which can be used to process optical signals. Great efforts have been devoted to developing new materials and structures for NOSP. However, one of the challenges in implementing NOSP is the requirement of high-intensity light fields, which is difficult to generate and maintain. This has been a major roadblock to realize practical NOSP systems for high-speed, high-capacity optical communications. Here, we propose using a parity-time (PT) symmetric microresonator system to significantly enhance the light intensity and support high-speed operation by relieving the bandwidth-efficiency limit imposed on conventional single resonator systems. The design concept is the co-existence of a PT symmetry broken regime for a narrow-linewidth pump wave and near-exceptional point operation for broadband signal and idler waves. This enables us to achieve a new NOSP system with two orders of magnitude improvement in efficiency compared to a single resonator. With a highly nonlinear AlGaAs-on-Insulator platform, we demonstrate an NOSP at a data rate approaching 40 gigabits per second with a record low pump power of one milliwatt. These findings pave the way for the development of fully chip-scale NOSP devices with pump light sources integrated together, potentially leading to a wide range of applications in optical communication networks and classical or quantum computation. The combination of PT symmetry and NOSP may also open up opportunities for amplification, detection, and sensing, where response speed and efficiency are equally important.

Versatile photonic molecule switch in multimode microresonators

Harnessing optical supermode interaction to construct artificial photonic molecules has uncovered a series of fundamental optical phenomena analogous to atomic physics. Previously, the distinct energy levels and interactions in such two-level systems were provided by coupled microresonators. The reconfigurability is limited, as they often require delicate external field stimuli or mechanically altering the geometric factors. These highly specific approaches also limit potential applications. Here, we propose a versatile on-chip photonic molecule in a multimode microring, utilizing a flexible regulation methodology to dynamically control the existence and interaction strength of spatial modes. The transition between single/multi-mode states enables the “switched-off/on” functionality of the photonic molecule, supporting wider generalized applications scenarios. In particular, “switched-on” state shows flexible and multidimensional mode splitting control in aspects of both coupling strength and phase difference, equivalent to the a.c. and d.c. Stark effect. “Switched-off” state allows for perfect low-loss single-mode transition (Qi ~ 10 million) under an ultra-compact bend size (FSR ~ 115 GHz) in a foundry-based silicon microring. It breaks the stereotyped image of the FSR-Q factor trade-off, enabling ultra-wideband and high-resolution millimeter-wave photonic operations. Our demonstration provides a flexible and portable solution for the integrated photonic molecule system, extending its research scope from fundamental physics to real-world applications such as nonlinear optical signal processing and sixth-generation wireless communication.

Free‐Form Micro‐Optics Enabling Ultra‐Broadband Low‐Loss Off‐Chip Coupling

AbstractEfficient fiber‐to‐chip coupling has been a major hurdle to cost‐effective packaging and scalable interconnections of photonic integrated circuits. Conventional photonic packaging methods relying on edge or grating coupling are constrained by high insertion losses, limited bandwidth density, narrow band operation, and sensitivity to misalignment. This work presents a new fiber‐to‐chip coupling scheme based on free‐form reflective micro‐optics. A design approach which simplifies the high‐dimensional free‐form optimization problem to as few as two full‐wave simulations is implemented to empower computationally efficient design of high‐performance free‐form reflectors while capitalizing on the expanded geometric degrees of freedom. This work demonstrates fiber array coupling to waveguides taped out through a standard foundry shuttle run and backend integrated with 3‐D printed micro‐optics. A low coupling loss down to 0.5 dB is experimentally measured at 1550 nm wavelength with a record 1‐dB bandwidth of 300 nm spanning O to U bands. The coupling scheme further affords large alignment tolerance, high bandwidth density, and solder reflow compatibility, qualifying it as a promising optical packaging solution for applications such as wavelength division multiplexing communications, broadband spectroscopic sensing, and nonlinear optical signal processing.

Enhanced optical nonlinearity in a silicon–organic hybrid slot waveguide for all-optical signal processing

Silicon photonic integrated devices used for nonlinear optical signal processing play a key role in ultrafast switching, computing, and modern optical communications. However, current devices suffer from limited operation speeds and low conversion efficiencies due to the intrinsically low nonlinear index of silicon. In this paper, we experimentally demonstrate enhanced optical nonlinearity in a silicon–organic hybrid slot waveguide consisting of an ultranarrow slot waveguide coated with a highly nonlinear organic material. The fabricated slot area is as narrow as 45 nm, which is, to the best of our knowledge, the narrowest slot width that has been experimentally reported in silicon slot waveguides. The nonlinear coefficient of the proposed device with a length of 3 mm is measured to be up to 1.43 × 10 6 W − 1 km − 1 . Based on the nanostructure design, the conversion efficiencies of degenerate four-wave mixing showed enhancements of more than 12 dB and 5 dB compared to those measured for an identical device without the organic material and a silicon strip waveguide, respectively. As a proof of concept, all-optical canonical logic units based on the prepared device with two inputs at 40 Gb/s are analyzed. The obtained logic results showed clear temporal waveforms and wide-open eye diagrams with error-free performance, illustrating that our device has great potential for use in high-speed all-optical signal processing and high-performance computing in the nodes and terminals of optical networks.

Investigation of Mid-Infrared Broadband Second-Harmonic Generation in Non-Oxide Nonlinear Optic Crystals

The mid-infrared (mid-IR) continuum generation based on broadband second harmonic generation (SHG) (or difference frequency generation) is of great interest in a wide range of applications such as free space communications, environmental monitoring, thermal imaging, high-sensitivity metrology, gas sensing, and molecular fingerprint spectroscopy. The second-order nonlinear optic (NLO) crystals have been spotlighted as a material platform for converting the wavelengths of existing lasers into the mid-IR spectral region or for realizing tunable lasers. In particular, the spectral coverage could be extended to ~19 µm with non-oxide NLO crystals. In this paper, we theoretically and numerically investigated the broadband SHG properties of non-oxide mid-IR crystals in three categories: chalcopyrite semiconductors, defect chalcopyrite, and orthorhombic ternary chalcogenides. The technique is based on group velocity matching between interacting waves in addition to birefringent phase matching. We will describe broadband SHG characteristics in terms of beam propagation directions, spectral positions of resonance, effective nonlinearities, spatial walk-offs between interacting beams, and spectral bandwidths. The results will show that the spectral bandwidths of the fundamental wave allowed for broadband SHG to reach several hundreds of nm. The corresponding SH spectral range spans from 1758.58 to 4737.18 nm in the non-oxide crystals considered in this study. Such broadband SHG using short pulse trains can potentially be applied to frequency up-conversion imaging in the mid-IR region, in information transmission, and in nonlinear optical signal processing.

Dispersion Optimization of Silicon Nitride Waveguides for Efficient Four-Wave Mixing

Silicon nitride waveguides have emerged as an excellent platform for photonic applications, including nonlinear optical signal processing, owing to their relatively high Kerr nonlinearity, negligible two photon absorption, and wide transparent bandwidth. In this paper, we propose an effective approach using 3D finite element method to optimize the dispersion characteristics of silicon nitride waveguides for four-wave mixing (FWM) applications. Numerical studies show that a flat and low dispersion profile can be achieved in a silicon nitride waveguide with the optimized dimensions. Near-zero dispersion of 1.16 ps/km/nm and 0.97 ps/km/nm at a wavelength of 1550 nm are obtained for plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) silicon nitride waveguides, respectively. The fabricated micro-ring resonator with the optimized dimensions exhibits near-zero dispersion of −0.04 to −0.1 ps/m/nm over a wavelength range of 130 nm which agrees with the numerical simulation results. FWM results show that near-zero phase mismatch and high conversion efficiencies larger than −12 dB using a low pump power of 0.5 W in a 13-cm long silicon nitride waveguide are achieved.

Giant enhancement of optical nonlinearity in two-dimensional materials by multiphoton-excitation resonance energy transfer from quantum dots

Colloidal quantum dots are promising photoactive materials that enable plentiful photonic and optoelectronic applications ranging from lasers, displays and photodetectors to solar cells1,2,3,4,5,6,7,8,9. However, these applications mainly utilize the linear optical properties of quantum dots, and their great potential in the broad nonlinear optical regime is still waiting for full exploration10,11,12. Here, we demonstrate that a simple coating of a sub-200-nm-thick quantum dot film on two-dimensional materials can significantly enhance their nonlinear optical responses (second, third and fourth harmonic generation) by more than three orders of magnitude. Systematic experimental results indicate that this enhancement is driven by a non-trivial mechanism of multiphoton-excitation resonance energy transfer, where the quantum dots directly deliver their strongly absorbed multiphoton energy to the adjacent two-dimensional materials by a remote dipole–dipole coupling. Our findings could expand the applications of quantum dots in many exciting areas beyond linear optics, such as nonlinear optical signal processing, multiphoton imaging and ultracompact nonlinear optical elements.

On-Chip Programmable Nonlinear Optical Signal Processor and Its Applications

We introduce an integrated device based on microring resonator (MRR) assisted Mach-Zehnder interferometer (MZI) preceded by a tunable MZ coupler for nonlinear optical signal processing. The novel structure of this device provides both high programmability and switching contrast. These desirable features suggest its potential use as a multi-purpose optical processor providing different high-performance functionalities. We experimentally demonstrate two functionalities using the same device fabricated on a silicon-on-insulator substrate. One functionality is an all-optical thresholder enabling 40× signal contrast improvement, and the other functionality is clock-less pulse carving technique that converts long-pulse signals to short-pulse signals. With these functionalities, we discuss system-level applications of our device in optical interconnects and photonic neural networks.

Sub-bandgap pulsed laser patterning of planar chalcogenide microphotonics

Chalcogenide based micro-devices, including integrated photonic waveguides and metasurfaces, have broad applications from mid-infrared nonlinear optical signal processing to reconfigurable photonic metasurfaces. Laser machining is a flexible and cost-effective method for lithography-free patterning and postprocessing of large scale microphotonics. In the past, patterning of chalcogenide thin film materials has been focused on dosage studies with single-point laser exposure, or laser inscription of waveguides. Little effort has been made to find how to reduce feature size or improve the optical qualities of the pattern. In this work, we use a nanosecond laser to create linear features with high refractive index contrast in chalcogenide glass thin film and compare the feature size and surface roughness to other dielectric and metal thin films. By tuning laser power and burst pulse numbers, a minimal feature size of 6 µm and edge roughness of 3 nm can be achieved in chalcogenide phase change material thin film. Non-volatile tunabilities are demonstrated in those laser-patterned microphotonic gratings.

On-chip high-efficiency wavelength multicasting of PAM3/PAM4 signals using low-loss AlGaAs-on-insulator nanowaveguides.

Nonlinear optics-based optical signal processing (OSP) could potentially increase network flexibility because of its transparency, tunability, and large bandwidth. A low-loss, high nonlinearity, and compact integrated material platform is always the pursuit of OSP. In this Letter, a high-efficiency, one-to-six wavelength multicasting of 10 Gbaud pulse-amplitude modulation (PAM3/PAM4) signals using a 6 cm long Al0.2Ga0.8As-on-insulator nanowaveguide is experimentally demonstrated for the first time, to the best of our knowledge. The low-loss, combined with the high nonlinear coefficient of the AlGaAsOI platform, enables us to achieve -11.2dB average conversion efficiency clear eye diagrams and <2.1dB power penalty at KP4-forward error correction threshold (2.4×10-4) for all the output PAM3/PAM4 multicasting channels. This result points to a new generation of nonlinear OSP photonic integrated circuits.

Dual-Mode GVD Tailoring in a Convex Waveguide

Mode division multiplexing (MDM) silicon photonic integrated circuits (PICs) have been widely developed for achieving high-speed optical interconnects and communications. As an excellent nonlinear optical platform, silicon PICs also receive great attention in applications of optical parametric devices and nonlinear optical signal processing. However, it is still challenging to develop MDM optical parametric devices due to the strong mode dependence of the group velocity dispersion (GVD) in a silicon waveguide. Here, we theoretically design a convex waveguide exhibiting almost the same GVD profiles for quasi-TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> and quasi-TE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> modes based on the standard fabrication flow of silicon photonic foundries. Specifically, flat GVD curves varying from -1500 ps/nm/km to -1000 ps/nm/km are obtained for the two modes in a convex waveguide within a spectral region of 1.37 μm to 1.75 μm covering from E-band to U-band. The study is expected to open an avenue for exploring unprecedented MDM nonlinear applications.

Kerr nonlinearity induced four-wave mixing of CMOS-compatible PECVD deposited ultra-Si-rich-nitride

Benefitting from low propagation loss and complementary metal–oxide–semiconductor compatibility, Si3N4 is heavily explored for the applications of nonlinear optical signal processing. However, the Si3N4 waveguide is limited by its low optical Kerr nonlinearity. In this work, we introduce highly nonlinear ultra-Si-rich-nitride (USRN) deposited by the plasma enhanced chemical vapor deposition system. The measured linear refractive index of USRN is 3.09 at a wavelength of 1550 nm, while the Kerr nonlinearity of the USRN waveguide is experimentally extracted with a value of 2.25×10−17 m2/W. Moreover, a broadband wavelength conversion ranging from S-band to L-band by a four-wave-mixing experiment is realized via designed USRN waveguide with a relatively short length of 3 mm. The measured bandwidth is 190 nm with a continuous-wave pump laser located at 1530 nm. The conversion efficiency is measured approximately −48 dB under a relatively low pump power of 7 dBm.

Stimulated Brillouin scattering in a tapered dual-core As2Se3-PMMA fiber for simultaneous temperature and strain sensing.

Chalcogenide fibers are currently being used widely in nonlinear optical signal processing, as they exhibit ultrahigh nonlinearity. Here, we propose a sensor based on stimulated Brillouin scattering for simultaneous temperature and strain measurement in a dual-core tapered As2Se3-polymethyl methacrylate fiber using a Brillouin optical time-domain analysis system. Different Brillouin frequency responses under temperature and strain variations and the separation of Brillouin frequency shifts (BFSs) in two principal polarization axes are demonstrated experimentally over a 50-cm-long tapered dual-core hybrid microfiber. The temperature coefficients are -3.8272MHz/∘C and -3.3302MHz/∘C, and the strain coefficients are -0.06143MHz/µε and -0.03463MHz/µε. Due to the different temperature and strain dependences of Brillouin frequency peaks in two polarizations, temperature and strain resolutions of 1°C and 33µε are realized, respectively. Numerical simulations are also reported to account for the BFS difference in two polarization axes.

Bandwidth adjustment and spectral defragmentation for optical networking unit using four wave mixing spectral compression.

Nonlinear optical signal processing is expected to be one of promising approaches in optical networking units (ONUs) and it requires mutual conversion between data signals and optical pulse signals for the bandwidth matching between them. We investigate four-wave mixing (FWM) based bandwidth management for ONUs and experimentally demonstrate variable bandwidth adjustment and defragmentation. Experimental results show variability in bandwidth adjustment and spectral defragmentation. Bit-error-rate (BER) measurements show an error-free operation (BER<10-9) with a power penalty of 3.75 dB after FWM-based bandwidth management in simulation.

Review of Recent Progress on Silicon Nitride-Based Photonic Integrated Circuits

Silicon photonic devices used in the photonics industry over the past three decades have helped in realizing large-scale photonic integrated circuits. Silicon nitride (Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) is another CMOS-compatible platform that provides several advantages such as low loss, high optical power tolerance, and broad spectral operation band from visible to infrared wavelengths. Recently, the combination of Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> waveguide technology with silicon photonics and III-V materials has opened up new areas in on-chip applications. Researchers in the field are primarily focusing on its applications such as on-chip gas sensing, nonlinear optical signal processing, and label-free biosensors based on photonic integrated circuits. In this review paper, we discuss Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> material-based platforms for a variety of applications with devices ranging from passive to active and hybrid photonic devices.

Machine learning approach for computing optical properties of a photonic crystal fiber

Photonic crystal fibers (PCFs) are the specialized optical waveguides that led to many interesting applications ranging from nonlinear optical signal processing to high-power fiber amplifiers. In this paper, machine learning techniques are used to compute various optical properties including effective index, effective mode area, dispersion and confinement loss for a solid-core PCF. These machine learning algorithms based on artificial neural networks are able to make accurate predictions of above-mentioned optical properties for usual parameter space of wavelength ranging from 0.5-1.8 µm, pitch from 0.8-2.0 µm, diameter by pitch from 0.6-0.9 and number of rings as 4 or 5 in a silica solid-core PCF. We demonstrate the use of simple and fast-training feed-forward artificial neural networks that predicts the output for unknown device parameters faster than conventional numerical simulation techniques. Computation runtimes required with neural networks (for training and testing) and Lumerical MODE solutions are also compared.

Integration of Brillouin and passive circuits for enhanced radio-frequency photonic filtering

Signal processing using on-chip nonlinear or linear optical effects has shown tremendous potential for RF photonic applications. Combining nonlinear and linear elements on the same photonic chip can further enable advanced functionality and enhanced system performance in a robust and compact form. However, the integration of nonlinear and linear optical signal processing units remains challenging due to the competing and demanding waveguide requirements, specifically the combination of high optical nonlinearity in single-pass waveguides, which is desirable for broadband signal processing with low linear loss and negligible nonlinear distortions required for linear signal processing. Here, we report the first demonstration of integrating Brillouin-active waveguides and passive ring resonators on the same integrated photonic chip, enabling an integrated microwave photonic notch filter with ultradeep stopband suppressions of &amp;gt;40 dB, a low filter passband loss of &amp;lt;−10 dB, flexible center frequency tuning over 15 GHz, and reconfigurable filter shape. This demonstration paves the way for implementing high-performance integrated photonic processing systems that merge complementary linear and nonlinear properties, for advanced functionality, enhanced performance, and compactness.

Enhanced optical Kerr nonlinearity of graphene/Si hybrid waveguide

In this work, we experimentally study the optical Kerr nonlinearities of graphene/Si hybrid waveguides with enhanced self-phase modulation. In the case of CMOS compatible materials for nonlinear optical signal processing, Si and silicon nitride waveguides have been extensively investigated over the past decade. However, Si waveguides exhibit strong two-photon absorption (TPA) at telecommunication wavelengths, which leads to a significant reduction of the nonlinear figure-of-merit (FOM). In contrast, a silicon nitride based material system usually suppresses the TPA but simultaneously leads to the reduction of Kerr nonlinearity by one order of magnitude. Here, we introduce a graphene/Si hybrid waveguide, which maintains the optical properties and CMOS compatibility of Si waveguides, while enhancing the Kerr nonlinearity, by transferring over to the top of the waveguides. The graphene/Si waveguides are measured to have an enhanced nonlinear parameter of 510 W−1 m−1, compared with that of the Si waveguide of 150 W−1 m−1. An enhanced nonlinear FOM of 2.48 ± 0.25 has been achieved, which is four times larger than that of the Si waveguide of 0.6 ± 0.1. This work reveals the potential application of graphene/Si hybrid waveguides with high Kerr nonlinearity and FOM for nonlinear all-optical signal processing.

Enhanced Second Harmonic Generation in Double‐Resonance Colloidal Metasurfaces

AbstractA key challenge for optical circuits is the ability to integrate nonlinear optical signal processing components such as optical modulators and frequency mixers at the chip scale. Optical antennas that focus light into nanoscale volumes can be utilized to shrink the footprint and increase the efficiency of these components. Multiresonant antennas that enhance both optical absorption and emission process are recently demonstrated to enable efficient nonlinear frequency conversion at the nanoscale and are promising as structures for second harmonic generation (SHG) and upconversion. Here, the ability of colloidal metasurfaces fabricated by self‐assembly as on‐chip platforms for enhanced SHG is demonstrated. These metasurfaces exhibit high spatial overlap of multiple surface plasmon modes whose frequencies can be independently tuned through appropriate design of colloidal and metasurface geometries. It is demonstrated that these bottom‐up structures rival lithographic nonlinear optical antennas in SHG efficiency, suggesting the potential for these colloidal metasurfaces in integrated on‐chip architectures.

Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work, we provide the first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 ± 0.45 [W × m]−1, and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4 ± 1e-18 [m2/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.