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Abstract
Silicon photonic devices used in the photonics industry over the past three decades have helped in realizing large-scale photonic integrated circuits. Silicon nitride (Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) is another CMOS-compatible platform that provides several advantages such as low loss, high optical power tolerance, and broad spectral operation band from visible to infrared wavelengths. Recently, the combination of Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> waveguide technology with silicon photonics and III-V materials has opened up new areas in on-chip applications. Researchers in the field are primarily focusing on its applications such as on-chip gas sensing, nonlinear optical signal processing, and label-free biosensors based on photonic integrated circuits. In this review paper, we discuss Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> material-based platforms for a variety of applications with devices ranging from passive to active and hybrid photonic devices.
Highlights
Recently, high performance communication systems have been in a huge demand that can only be dealt by large-scale photonic solutions and super-channel transmissions
Due to the high optical intensity required for the nonlinear frequency conversion, nonlinear losses can arise from the material, e.g., two-photon absorption (TPA), when pumped in the nearinfrared[2,3]
One way to incorporate active devices with Si3N4 is by devising the hybrid Si3N4/SOI platform where the Si layer mainly serves as an active layer for modulators because it is helpful in cost-efficient small form factor coherent modulators which influence scalable silicon photonic architectures, giving higher levels of integration than Indium phosphide (InP) or LiNbO3 for high baud rate datacenter interconnect demands
Summary
High performance communication systems have been in a huge demand that can only be dealt by large-scale photonic solutions and super-channel transmissions. One way to incorporate active devices with Si3N4 is by devising the hybrid Si3N4/SOI platform where the Si layer mainly serves as an active layer for modulators because it is helpful in cost-efficient small form factor coherent modulators which influence scalable silicon photonic architectures, giving higher levels of integration than InP or LiNbO3 for high baud rate datacenter interconnect demands. A bottom reflector based high efficiency apodized grating coupler with Si3N4 photonic integrated circuits is presented in [82] Their single etch CMOS compatible design gives the measured peak coupling efficiency of -1.75dB and a 3dB wavelength bandwidth of 76.34 nm with a 20-layers of reflector. A vertical symmetric waveguide formed with Si3N4and Si layer for the adiabatic transformation of fundamental TM mode to first order TE mode was proposed in [70], which is based on the angled multimode interferometer structure and used for the fluorescence sensing application in the visible light
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