Non-layered Structure Research Articles

Chemical Vapor Deposition Growth of 2D Nonlayered CuInSe2 for Vacancy-Assisted Broadband Photodetection.

The properties and device applications of 2D semiconductors are highly sensitive to intrinsic structural defects due to their ultrathin nature. CuInSe2 (CIS) materials own excellent optoelectronic properties and ordered copper vacancies, making them widely applicable in photovoltaic and photodetection fields. However, the synthesis of 2D CIS nanoflakes remains challenging due to the nonlayered structure, multielement composition, and the competitive growth of various by-products, which further hinders the exploration of vacancy-related optoelectronic devices. Here, 2D CIS nanoflakes are successfully synthesized using a molecular sieve-assisted chemical vapor deposition process. The anisotropic van der Waals growth with well-defined exposed facets is closely associated with the presence of the molecular sieve. Electron microscopy techniques reveal the ordered copper vacancies within the as-grown 2D crystals, extending the optical absorption to the near-infrared region. Consequently, 2D CIS nanoflake-based photodetectors exhibit broadband photodetection capabilities (470 to 1550nm) and exceptional performance, such as a high responsivity of 11 AW-1, an external quantum efficiency (EQE) of 2143%, and a fast response speed of ≈46.5ms under an incident wavelength of 637nm, highlighting their promising potential in next-generation optoelectronics.

Two-Dimensional-Like Phonons in Three-Dimensional-Structured Rhombohedral GeSe-Based Compounds with Excellent Thermoelectric Performance.

The coupling of charge and phonon transport in solids is a long-standing issue for thermoelectric performance enhancement. Herein, two new narrow-gap semiconductors with the same chemical formula of GeSe0.65Te0.35 (GST) are rationally designed and synthesized: one with a layered hexagonal structure (H-GST) and the other with a non-layered rhombohedral structure (R-GST). Thanks to the three-dimensional (3D) network structure, R-GST possesses a significantly larger weighted mobility than H-GST. Surprisingly, 3D-structured R-GST displays an extremely low lattice thermal conductivity of ∼0.5 W m-1 K-1 at 523 K, which is comparable to that of layered H-GST. The two-dimensional (2D)-like phonon transport in R-GST stems from the unique off-centering Ge atoms that induce ferroelectric instability, yielding soft polar phonons, as demonstrated by the Boson peak detected by the low-temperature specific heat and calculated phonon spectra. Furthermore, 1 mol % doping of Sb is utilized to successfully suppress the undesired phase transition of R-GST toward H-GST at elevated temperatures. Consequently, a peak ZT of 1.1 at 623 K is attained in the rhombohedral Ge0.99Sb0.01Se0.65Te0.35 sample, which is 1 order of magnitude larger than that of GeSe. This work demonstrates the feasibility of exploring high-performance thermoelectric materials with decoupled charge and phonon transport in off-centering compounds.

Low Temperature Synthesis of 2D p-Type α-In2Te3 with Fast and Broadband Photodetection.

2D compounds (A = Al, Ga, In, and B = S, Se, and Te) with intrinsic structural defects offer significant opportunities for high-performance and functional devices. However, obtaining 2D atomic-thin nanoplates with non-layered structure on SiO2/Si substrate at low temperatures is rare, which hinders the study of their properties and applications at atomic-thin thickness limits. In this study, the synthesis of ultrathin, non-layered α-In2Te3nanoplates is demonstrated using a BiOCl-assisted chemical vapor deposition method at a temperature below 350°C on SiO2/Si substrate. Comprehensive characterization results confirm the high-quality single crystal is the low-temperature cubic phase α-In2Te3 , possessing a noncentrosymmetric defected ZnS structure with good second harmonic generation. Moreover, α-In2Te3 is revealed to be a p-type semiconductor with a direct and narrow bandgap value of 0.76eV. The field effect transistor exhibits a high mobility of 18 cm2 V-1s-1,and the photodetector demonstrates stable photoswitching behavior within a broadband photoresponse from 405 to 1064nm, with a satisfactory response time of τrise = 1ms. Notably, the α-In2Te3 nanoplates exhibit good stability against ambient environments. Together, these findings establish α-In2Te3 nanoplates as promising candidates for next-generation high-performance photonics and electronics.

Review and New Perspectives on Non-Layered Manganese Compounds as Electrode Material for Sodium-Ion Batteries.

After more than 30 years of delay compared to lithium-ion batteries, sodium analogs are now emerging in the market. This is a result of the concerns regarding sustainability and production costs of the former, as well as issues related to safety and toxicity. Electrode materials for the new sodium-ion batteries may contain available and sustainable elements such as sodium itself, as well as iron or manganese, while eliminating the common cobalt cathode compounds and copper anode current collectors for lithium-ion batteries. The multiple oxidation states, abundance, and availability of manganese favor its use, as it was shown early on for primary batteries. Regarding structural considerations, an extraordinarily successful group of cathode materials are layered oxides of sodium, and transition metals, with manganese being the major component. However, other technologies point towards Prussian blue analogs, NASICON-related phosphates, and fluorophosphates. The role of manganese in these structural families and other oxide or halide compounds has until now not been fully explored. In this direction, the present review paper deals with the different Mn-containing solids with a non-layered structure already evaluated. The study aims to systematize the current knowledge on this topic and highlight new possibilities for further study, such as the concept of entatic state applied to electrodes.

Petrogenesis of Andesite Rocks in Datae Area, Sidenreng Rappang Regency, South Sulawesi Province

The research area is in the Datae Area, Watangpulu District, Sidenreng Rappang Regency, South Sulawesi Province. This study aims to determine the distribution of volcanic rocks, determine the crystallization phase based on petrographic analysis, and determine the type, magma affinity and tectonic environment based on geochemical data. The method used in this study was field data collection and rock sampling for analysis through petrographic analysis and geochemical analysis using the X-Ray Fluorescence (XRF) method by analysing the main elements, trace elements and rare earth elements (REE). The results of the petrographic analysis show that the rocks found in the field are volcanic breccia and ignimbrite. Volcanic breccia showed coarse-grained texture composed of angular to rounded andesite fragments and pyroclastic material fused together in a matrix. Meanwhile, ignimbrite showed fine grained texture with lapilli to boulder-sized fragments, poor sorting, open-packed and non-layered structure. Based on the Total Alkali Silika (TAS) diagram, AFM diagram, and binary diagram, the results of the geochemical analysis showed that the rocks found in the study area were andesite and trachy-andesite, while the magma affinity area is high-K calc-alkaline and shoshonitic. High-K calc-alkaline magmas are associated with subduction zones and are characterized by elevated levels of potassium and aluminum, while shoshonitic magmas are typically found in intraplate or back-arc settings, characterized by their distinctive potassium, sodium, and barium-rich compositions. The results from ternary diagram and geochemical Spider plots proved that the magma tectonic environment is island arc—continental arc basalt, indicating that the rock was formed in a subduction area. This research supports previous research regarding the tectonics of the western arm of Sulawesi, which stated that this area was formed by subduction.

Phase Engineering of 2D Spinel-Type Manganese Oxides.

2D magnetic materials have been of interest due to their unique long-range magnetic ordering in the low-dimensional regime and potential applications in spintronics. Currently, most studies are focused on strippable van der Waals magnetic materials with layered structures, which typically suffer from a poor stability and scarce species. Spinel oxides have a good environmental stability and rich magnetic properties. However, the isotropic bonding and close-packed nonlayered crystal structure make their 2D growth challenging, let alone the phase engineering. Herein, a phase-controllable synthesis of 2D single-crystalline spinel-type oxides is reported. Using the van der Waals epitaxy strategy, the thicknesses of the obtained tetragonal and hexagonal manganese oxide (Mn3 O4 ) nanosheets can be tuned down to 7.1nm and one unit cell (0.7nm), respectively. The magnetic properties of these two phases are evaluated using vibrating-sample magnetometry and first-principle calculations. Both structures exhibit a Curie temperature of 48 K. Owing to its ultrathin geometry, the Mn3 O4 nanosheet exhibits a superior ultraviolet detection performance with an ultralow noise power density of 0.126 pA Hz-1/2 . This study broadens the range of 2D magnetic semiconductors and highlights their potential applications in future information devices.

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga2O3 Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Herein, we demonstrated the controllable synthesis of a centimeter-scale two-dimensional (2D) ZnO-doped Ga2O3 nanostructure layer by a liquid Ga–Zn alloy printing strategy at near room temperature. Different from the liquid Ga–In and Ga–In–Sn alloys, the surface oxidation behavior of a liquid Ga–Zn alloy follows an obvious competition and cooxidation characteristics instead of the dominant oxidation characteristic of Ga, which could be effectively used to precisely tailor the Zn content of 2D Ga2O3 films. With an increase of the nominal Zn content in the Ga–Zn alloy from 0 to 8 atom %, the real Zn content of 2D ZnO-doped Ga2O3 films gradually increases and finally reaches a maximum saturated value of 16–18 atom % at the eutectic component of 3.87 atom %. Correspondingly, the transmittance and band gap of 2D ZnO-doped Ga2O3 films could also be tuned by changes of the Zn content and crystallinity. The method proposed in this work provides a general route toward the doping synthesis of a diverse nonlayered 2D structure, which will shed light on the applications of various displays and deep-ultraviolet optoelectronic devices.

Synthesis of Ultrathin Topological Insulator β-Ag2 Te and Ag2 Te/WSe2 -Based High-Performance Photodetector.

β-Ag2 Te has attracted considerable attention in the application of electronics and optoelectronics due to its narrow bandgap, high mobility, and topological insulator properties. However, it remains a significant challenge to synthesize 2D Ag2 Te because of the non-layered structure of Ag2 Te. Herein, the synthesis of large-size, ultrathin single crystal topological insulator 2D Ag2 Te via the van der Waals epitaxial method for the first time is reported. The 2D Ag2 Te crystal exhibits p-type conduction behavior with high carrier mobility of 3336 cm2 V-1 s-1 at room temperature. Taking advantage of the high mobility and perfect electron structure of Ag2 Te, the Ag2 Te/WSe2 heterojunctions are fabricated via mechanical stacking and show an ultrahigh rectification ratio of 2×105 . Ag2 Te/WSe2 photodetector also exhibits self-driven properties with a fast response speed (40 µs/60 µs) in the near-infrared region. High responsivity (219mA W-1 ) and light ON/OFF ratio of 6×105 are obtained under the photovoltaic mode. The overall performance of the Ag2 Te/WSe2 photodetector is significantly competitive among all reported 2D photodetectors. These results indicate that 2D Ag2 Te is a promising candidate for future electronic and optoelectronic applications.

Facile one-pot synthesis of polyethyleneimine functionalized α-FeOOH nanoraft consisted of single-layer parallel-aligned ultrathin nanowires for efficient removal of Cr (VI): Synergy of reduction and adsorption

Two-dimensional (2D) iron oxide-hydroxide (FeOOH) nanomaterials as low-cost and environmental-friendly composites are promising materials for application in heavy metal elimination. However, developing 2D FeOOH adsorbents with high adsorption capacity and excellent durability toward Cr (VI) removal is still a challenge due to the intrinsically non-layered structure. Here, a novel polyethyleneimine (PEI) functionalized 2D single-layer nano-raft-like α-FeOOH (α-FeOOH NF) consisted of parallel-aligned ultrathin nanowires was obtained via a facile one-pot hydrothermal approach. It was found that the 2D α-FeOOH NF nanostructure was formed by an in-plane iterative self-assembly mechanism, where α-FeOOH nanoparticles acted as intermediates and iterative seeds with anisotropic growth. The as-prepared 2D α-FeOOH NF possessed porous structure and high surface area, which provided a strong ability to capture the Cr (VI) ions in water. Benefiting from the unique structure and PEI modification, it exhibited fast adsorption kinetic rate, high reusability, and high adsorption capacity toward Cr(VI) removal. The removal mechanism involved adsorption and reduction process. Besides, the molecular dynamic simulations disclosed a facet-dependent Cr(VI) adsorption behavior of α-FeOOH. The maximum adsorption capacity was 67.1 mg/g and the removal efficiency still maintained 83.9 % in the fifth cycle. This work demonstrated that 2D α-FeOOH NF could be a promising adsorbent for Cr(VI) removal.

Epitaxial Growth of 2D Ultrathin Metastable γ-Bi2 O3 Flakes for High Performance Ultraviolet Photodetection.

Ultraviolet detection is of great significance due to its wide applications in the missile tracking, flame detecting, pollution monitoring, and so on. The nonlayered semiconductor γ-Bi2 O3 is a promising candidate toward high-performance UV detection due to the wide bandgap, excellent light sensitivity, environmental stability, nontoxic and elemental abundance properties. However, controllable preparation of ultrathin 2D γ-Bi2 O3 flakes remains a challenge, owing to its nonlayered structure, metastable nature, and other competing phases. Moreover, the UV photodetectors based on 2D γ-Bi2 O3 flake have not been implemented yet. Here, ultrathin (down to 4.8nm) 2D γ-Bi2 O3 flakes with high crystal quality are obtained via a van der Waals epitaxy method. The as-synthesized single-crystalline γ-Bi2 O3 flakes show a body-centered cubic structure and grown along (111) lattice plane as revealed by experimental observations. More importantly, photodetectors based on the as-synthesized 2D γ-Bi2 O3 flakes exhibit promising UV detection ability, including a responsivity of 64.5 A W-1 , a detectivity of 1.3 × 1013 Jones, and an ultrafast response speed (τrise ≈ 290 µs and τdecay ≈ 870 µs) at 365nm, suggesting its great potential for various optoelectronic applications.

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector.

Two-dimensional (2D) materials have expansive application prospects in electronics and optoelectronics devices due to their unique physical and chemical properties. 2D layered materials are easy to prepare due to the layered crystal structure and the interlayer van der Waals combination. However, the 2D nonlayered materials are difficult to prepare due to the nonlayered crystal structure and the combination of interlayer isotropic chemical bonds, resulting in limited research on 2D nonlayered materials with broad characteristics. Here, a 2D nonlayered NiSe material has been synthesized by a chemical vapor deposition method. The atomic force microscopy study shows that the grown NiSe with a thin thickness. Energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy results demonstrate the uniformity and high quality of NiSe flakes. The NiSe based photodetector realizes the laser response to 830 nm and 10.6 μm and the maximum responsivity is ~6.96 A/W at room temperature. This work lays the foundation for the preparation of 2D nonlayered materials and expands the application of 2D nonlayered materials in optoelectronics fields.

General synthesis of 2D rare-earth oxide single crystals with tailorable facets.

Two-dimensional (2D) rare-earth oxides (REOs) are a large family of materials with various intriguing applications and precise facet control is essential for investigating new properties in the 2D limit. However, a bottleneck remains with regard to obtaining their 2D single crystals with specific facets because of the intrinsic non-layered structure and disparate thermodynamic stability of different facets. Herein, for the first time, we achieve the synthesis of a wide variety of high-quality 2D REO single crystals with tailorable facets via designing a hard-soft-acid-base couple for controlling the 2D nucleation of the predetermined facets and adjusting the growth mode and direction of crystals. Also, the facet-related magnetic properties of 2D REO single crystals were revealed. Our approach provides a foundation for further exploring other facet-dependent properties and various applications of 2D REO, as well as inspiration for the precise growth of other non-layered 2D materials.

Ni(OH)2 Templated Synthesis of Ultrathin Ni3 S2 Nanosheets as Bifunctional Electrocatalyst for Overall Water Splitting.

Ultrathin nickel (Ni)-based sulfide nanosheets have been reported as excellent electrocatalysts for overall water splitting; however, the uncontrollability over thickness due to the nonlayered structure still hampers its practical application. Herein, a simple topochemical conversion strategy is employed to synthesize cobalt-doped Ni3 S2 (Co-Ni3 S2 ) ultrathin nanosheets on Ni foam. The Co-Ni3 S2 nanosheets are controlled synthesized by using Co-Ni(OH)2 ultrathin nanosheets as templates with anneal and sulfurization treatment, showing exceptional electrocatalytic activity. This template-assisted method can also be applied to obtain Ni, NiO, and NiPx nanosheets, providing a universal strategy to synthesize ultrathin nanosheets of nonlayered materials. The overall water splitting of this Co-Ni3 S2 ultrathin nanosheets achieves a low voltage of 1.54V at a current density of 10mA cm-2 and high durability in 1 m KOH, comparable to the best performance of electrochemical water splitting ever reported. The detailed structural transformation of Ni-based sulfides in the catalytic process and its mechanism are further explored both experimentally and theoretically.

Nonlayered Tin Thiohypodiphosphate Nanosheets: Controllable Growth and Solar-Light-Driven Water Splitting

As a promising candidate in various fields, including energy conversion and electronics, layered van der Waals metal phosphorus trichalcogenides (MPX3) have been widely explored. In addition to the layered structures, MPX3 comprising post-transition metals (i.e., Sn and Pb) are known to form a unique 3D framework with nonlayered structure. However, the nonlayered two-dimensional (2D) crystals of this family have remained unexplored until now. Herein, we successfully synthesized 2D nonlayered tin thiohypodiphosphate (Sn2P2S6) nanosheets, having an indirect bandgap of 2.25 eV and a thickness down to ∼10 nm. The as-obtained nanosheets demonstrate promising photocatalytic water splitting activity to generate H2 in pure water under simulated solar light (AM 1.5G). Moreover, the ultrathin Sn2P2S6 catalyst shows auspicious performance and stability with a continuous operation of 40 h. This work is not only an expansion of the MPX3 family, but it is also a major milestone in the search for new materials for future energy conversion.

Structural phase transition and superconductivity hierarchy in 1T-TaS2 under pressure up to 100\u2009GPa

The adoption of high pressure not only reinforces the comprehension of the structure and exotic electronic states of transition metal dichalcogenides (TMDs) but also promotes the discovery of intriguing phenomena. Here, 1T-TaS2 was investigated up to 100 GPa, and re-enhanced superconductivity was found with structural phase transitions. The discovered I4/mmm TaS2 presents strong electron–phonon coupling, revealing a good superconductivity of the nonlayered structure. The P–T phase diagram shows a dome shape centered at ~20 GPa, which is attributed to the distortion of the 1T structure. Accompanied by the transition to nonlayered structure above 44.5 GPa, the superconducting critical temperature shows an increasing trend and reaches ~7 K at the highest studied pressure, presenting superior superconductivity compared to the original layered structure. It is unexpected that the pressure-induced re-enhanced superconductivity was observed in TMDs, and the transition from a superconductor with complicated electron-pairing mechanism to a phonon-mediated superconductor would expand the field of pressure-modified superconductivity.

Free-standing ultra-thin Janus indium oxysulfide for ultrasensitive visible-light-driven optoelectronic chemical sensing

Atomically-thin Janus heterojunctions exhibit extraordinary electronic and optoelectronic properties, mainly due to their intrinsic built-in electric field. However, current investigations are limited within layered metal chalcogenides. Here, a free-standing ultra-thin Janus metal oxychalcogenide is realized from non-layered In 2 S 3 . In the presence of strong mechanical agitation in the liquid medium, the original tetragonal crystal is cleaved. Ambient oxygen atoms are subsequently diffused and incorporated into limited part of the crystal structure, forming the oxysulfide phase with the gradual transition into a hexagonal structure. While the integrity of the covalent bonding system is maintained, a tensile strain is generated as a result of the crystal coordination mismatching between the pure sulfide and oxysulfide phases, leading to a more than two orders enhancement on visible-light-driven exciton lifetime compared to that of pure In 2 S 3 . Such an impressive excitonic interaction provides the fundamentals to establish an ultra-sensitive and power-saving optoelectronic chemical sensing platform. As an example, dipoles generated by the surface adsorbed NO 2 molecules cause significant re-distribution of photoinduced charges in the anisotropic non-layered Janus structure under visible light low-power excitation, resulting in a superior sub-ppb detection limit of NO 2 gas at room temperature. • Free-standing Janus indium oxysulfide is formed from In 2 S 3 with oxygen incorporation. • Surface crystal transfer is due to the replacement of sulfur by diffused oxygen. • Deteriorated exciton binding energy and recombination rate; prolonged PL lifetime. • Visible-light-driven gas sensor is ultrasensitive to NO 2 gas at room temperature. • The limit of detection (LOD) is in parts-per-trillion (ppt) range.

A predicted non-layered phase of In2Se3 by first principles

In2Se3 is an important compound having a complex phase diagram. In this work, we found a non-layered phase of In2Se3 with the help of the particle swarm optimization method. Studies indicate that this phase is dynamically stable. It is an indirect band gap semiconductor with a gap of 2.36 eV. Calculated elastic constants imply that it is mechanically stable with elastic anisotropy. It has a low bulk modulus and Debye temperature despite of its non-layered structure. There are five strong peaks in the simulated infrared absorption spectrum and the corresponding vibrational modes are presented. Born effective charges and dielectric constants are obtained and discussed. The computed birefringence indicates that it might be a potential nonlinear optical crystal.

Effects of pressure on the structure and properties of layered ferromagnetic Cr2Ge2Te6

Cr2Ge2Te6 is a rare layered ferromagnetic semiconductor that represents a promising material for novel thermoelectric and spintronic devices. High pressure is an effective way to change the electronic structure, and profoundly affects the physical and chemical properties of two-dimensional (2D) layered materials. Here we combined experimental results and theoretical calculations to investigate the structural evolution and properties of Cr2Ge2Te6under high pressure. It is found that Cr2Ge2Te6 undergoes an isostructural phase transition from layered to non-layered structure at ~14 GPa, accompanied with a semiconductor to metal transition, which is distinct from the previous reports. The pressure-induced metallization is verified by the overlap of the valence and conduction bands, and the layered-to-non-layered isostructural transition is attributed to the enhanced interlayer Te–Te interaction by First-principles calculations. Our results provide a potential pathway to control the structure and property of layered materials and possibility for conceptually new devices via pressure engineering.

Van der Waals epitaxy of ultrathin crystalline PbTe nanosheets with high near-infrared photoelectric response

Lead telluride (PbTe) is one of the reliable candidates for infrared (IR) optoelectronics with optimum band-gap as well as excellent photoelectric properties. Great interests had been paid on the growth and device applications with PbTe for the development of high-performance IR photodetectors especially those working in the near-infrared regime. Although a great deal of effort had been made to prepare PbTe nanostructures for miniaturized detectors, it is difficult to synthesize high-quality two-dimensional (2D) PbTe crystals due to its rock-salt non-layered structure. Herein, a facile strategy for controllable synthesis of ultrathin crystalline PbTe nanosheets by van der Waals epitaxy is reported. With an optimized growth temperature, which determines the morphology transit from triangular pyramid islands to regular square 2D planars, PbTe nanosheets in lateral size of tens of microns with thickness down to ~ 7 nm are achieved. Meanwhile, ultrasensitive near-infrared detectors (NIRDs) based on the as-grown 2D PbTe nanosheets have been demonstrated with an ultrahigh responsivity exceeding 3,847 A/W at the wavelength of 1,550 nm under room temperature. Our approach demonstrates that 2D PbTe nanosheets have great latent capacity of developing high-performance miniaturized IR optoelectronic devices.

Zero-concentration quenching: a novel Eu3+ based red phosphor with non-layered crystal structure for white LEDs and NaSrY(MoO4)3:Sm3+ based deep-red LEDs for plant growth.

Oxide based highly efficient narrow band red emitting phosphors are still a bottleneck in white LED applications. Trivalent europium ion based phosphors could be a better choice, however their weak oscillator strength restricts their use in white light emitting diodes (LEDs). Herein, we report a novel red emitting NaSrEu(MoO4)3 (NSEuM) phosphor with zero concentration quenching (non-layered crystal structure). The phosphors (NaSrY1-xEux(MoO4)3, x = 0.1-1, in increments of 0.1) were synthesized through a traditional solid-state reaction and their phase formations were analyzed by powder X-ray diffraction (PXRD) followed by Rietveld refinement. Under 395 nm excitation, all the phosphors showed sharp emission at 616 nm (full width at half maximum, FWHM ∼4-5 nm) owing to the 5D0→7F2 electric dipole transition of the Eu3+ ion. A concentration dependent photoluminescence (PL) study revealed that there is no concentration quenching of the systems, leading to them having superior emission characteristics over those of commercial red phosphors as well as a reported Eu3+ phosphor with a layered structure. The color purity of the synthesized phosphor was observed to be 96.32% and it shows excellent thermal stability at 423 K, retaining 64.6% of the emission intensity of its initial room temperature. The NSEuM phosphor shows a high absolute quantum yield of 79.7%. Besides this, a red LED (near UV (NUV) LED chip with the NaSrEu(MoO4)3 phosphor) as well as a hybrid white LED (NUV LED chip with an organic yellow dye + red NSEuM phosphor) were fabricated and their optical properties were studied. After the inclusion of the red phosphor in the hybrid white LED, the color rendering index (CRI)/correlated color temperature (CCT) were improved significantly (60/9333 K vs. 79/6004 K, respectively). In addition, to show the potential use of the system in plant growth application, we systematically investigated the Sm3+ activation in NaSrY(MoO4)3 and found that the phosphor shows orange red emission with an intense deep red emission (645 nm (4G5/2→6H9/2)). We fabricated a hybrid red/deep red LED by integrating a NUV LED with a mixed Sm3+ and Eu3+ phosphor and the spectral lines were well matched with the phytochrome (Pr) absorption spectrum. The presently investigated phosphor showed potential in a white LED as well as a deep red/orange-red LED for plant growth.