Nonadiabatic Research Articles

Phonon-Coupled High-Harmonic Generation for Exploring Nonadiabatic Electron-Phonon Interactions.

High harmonic generation (HHG) have received significant attention for the exploration of material properties and ultrafast dynamics. However, the lack of consideration for couplings between HHG and other quasiparticles, such as phonons, has been impeding the understanding of many-body interactions in HHG. Here, we reveal the many-body electron-phonon mechanism in the quasiparticle-coupled strong-field dynamics by investigating the nonadiabatic (NA) coherent-phonon-coupled HHG. Coherent phonons are revealed to effectively affect HHG via the adiabatic band modulation induced by phonon deformation effects and the NA and nonequilibrium distribution of photocarriers in multiple valleys. The adiabatic and NA mechanisms leave their fingerprint via influencing the phonon period and phase delay in the oscillation of HHG intensity, both of which are experimentally measurable. Investigation of these quantities enables the direct probing of the electron-phonon interaction in materials.

Decoherence ensures convergence of non-adiabatic molecular dynamics with number of states.

Non-adiabatic (NA) molecular dynamics (MD) is a powerful approach for studying far-from-equilibrium quantum dynamics in photophysical and photochemical systems. Most NA-MD methods are developed and tested with few-state models, and their validity with complex systems involving many states is not well studied. By modeling intraband equilibration and interband recombination of charge carriers in MoS2, we investigate the convergence of three popular NA-MD algorithms, fewest switches surface hopping (FSSH), global flux surface hopping (GFSH), and decoherence induced surface hopping (DISH) with the number of states. Only the standard DISH algorithm converges with the number of states and produces Boltzmann equilibrium. Unitary propagation of the wave function in FSSH and GFSH violates the Boltzmann distribution, leads to internal inconsistency between time-dependent Schrödinger equation state populations and trajectory counts, and produces non-convergent results. Introducing decoherence in FSSH and GFSH by collapsing the wave function fixes these problems. The simplified version of DISH that omits projecting out the occupied state and is applicable to few-state systems also causes problems when the number of states is increased. We discuss the algorithmic application of wave function collapse and Boltzmann detailed balance and provide detailed FSSH, GFSH, and DISH flow charts. The use of convergent NA-MD methods is highly important for modeling complicated quantum processes involving multiple states. Our findings provide the basis for investigating quantum dynamics in realistic complex systems.

A Multipronged Bioengineering, Spectroscopic and Theoretical Approach in Unravelling the Excited-State Dynamics of the Archetype Mycosporine Amino Acid.

Mycosporine glycine (MyG) was produced by the fermentation of a purposely engineered bacterial strain and isolated from this sustainable source. The ultrafast spectroscopy of MyG was then investigated in its native, zwitterionic form (MyGzwitter), via femtosecond transient electronic absorption spectroscopy. Complementary nonadiabatic (NAD) simulations suggest that, upon photoexcitation to the lowest excited singlet state (S1), MyGzwitter undergoes efficient nonradiative decay to repopulate the electronic ground state (S0). We propose an initial ultrafast ring-twisting mechanism toward an S1/S0 conical intersection, followed by internal conversion to S0 and subsequent vibrational cooling. This study illuminates the workings of the archetype mycosporine, providing photoprotection, in the UV-B range, to organisms such as corals, macroalgae, and cyanobacteria. This study also contributes to our growing understanding of the photoprotection mechanisms of life.

Energy-Conserving Surface Hopping for Auger Processes.

Auger-type processes are ubiquitous in nanoscale materials because quantum confinement enhances Coulomb interactions, and there exist large densities of states. Modeling Auger processes requires the modification of nonadiabatic (NA) molecular dynamics algorithms to include transitions caused by both NA and Coulomb couplings. The system is split into quantum and classical subsystems, e.g., electrons and vibrations, and as a result, energy conservation becomes nontrivial. In surface hopping, an electronic transition induced by NA coupling is accompanied by a classical velocity readjustment to ensure conservation of the total quantum-classical energy. A different treatment is needed for Auger transitions driven by Coulomb interactions. We develop a nonadiabatic molecular dynamics methodology that meticulously differentiates the energy redistribution accompanying hops induced by the NA coupling and the Coulomb interaction and correctly conserves the total energy at each transition. If the transition is driven by a Coulomb interaction, the hop energy is redistributed within the quantum electronic subsystem only. If the transition is NA, the energy is redistributed between the quantum and classical subsystems. Properly maintaining energy conservation for both types of transitions is crucial to generate a correct order of events, obtain accurate transition times, maintain a proper statistical distribution of state populations, and reach thermodynamic equilibrium. We test the method with biexciton annihilation and Auger-assisted hot electron relaxation in a CdSe quantum dot. The sequence of Auger and phonon-driven processes and the calculated time scales are in excellent agreement with the experimental results. The developed approach can be coupled with any surface-hopping method and provides a crucial practical advance to study charge-carrier dynamics in the nanoscale and condensed matter systems.

The effective prolongation of the excited-state carrier lifetime of CsPbI2Br with applying strain.

In recent years, all-inorganic perovskites CsPbX3 (X = Cl, Br, I) have emerged as excellent candidates for solar cells due to their remarkable thermal stability and suitable bandgaps. Among them, CsPbI2Br is a hotspot in perovskite material research currently. Non-radiative electron-hole recombination often leads to significant energy losses, impacting the efficiency of solar cells, so a thorough understanding of carrier recombination mechanisms is crucial. Our work investigated the carrier recombination dynamics in detail and proved that strains can effectively reduce nonradiative recombination. In this study, using first-principles calculations combined with nonadiabatic (NA) molecular dynamics (MD), we demonstrate that applying 2% tensile and 2% compressive strains to CsPbI2Br can modify the bandgap, induce moderate disorder, reduce the overlap of electron-hole wavefunctions, decrease NA coupling, and shorten decoherence time, thereby minimizing non-radiative recombination and extending the carrier lifetime. Especially the 2% tensile strain exhibits more effective control performance, significantly reducing non-radiative electron-hole recombination and extending the charge carrier lifetime to 14.59 ns, nearly five times that of the pristine CsPbI2Br system (3.12 ns). This study reveals the impact mechanism of strain on carrier behavior in perovskite solar cells, providing a new non-chemical strategy for modulating the lifetime of photo-generated carriers and enhancing the efficiency of all-inorganic perovskite solar cells.

Substrate Ferroelectric Proximity Effects Have a Strong Influence on Charge Carrier Lifetime in Black Phosphorus.

By stacking monolayer black phosphorus (MBP) with nonpolarized and ferroelectric polarized bilayer hexagonal boron nitride (h-BN), we demonstrate that ferroelectric proximity effects have a strong influence on the charge carrier lifetime of MBP using nonadiabatic (NA) molecular dynamics simulations. Through enhancing the motion of phosphorus atoms, ferroelectric polarization enhances the overlap of electron-hole wave functions that improves NA coupling and decreases the bandgap, resulting in a rapid electron-hole recombination completing within a quarter of nanoseconds, which is two times shorter than that in nonpolarized stackings. In addition to the dominant in-plane Ag2 mode in free-standing MBP, the out-of-plane high-frequency Ag1 and low-frequency interlayer breathing modes presented in the heterojunctions drive the recombination. Notably, the resonance between the breathing mode within bilayer h-BN and the B1u mode of MBP provides an additional nonradiative channel in ferroelectric stackings, further accelerating charge recombination. These findings are crucial for charge dynamics manipulation in two-dimensional materials via substrate ferroelectric proximity effects.

Zeno and Anti-Zeno Effects in Nonadiabatic Molecular Dynamics.

Decoherence plays an important role in nonadiabatic (NA) molecular dynamics (MD) simulations because it provides a physical mechanism for trajectory hopping and can alter transition rates by orders of magnitude. Generally, decoherence effects slow quantum transitions, as exemplified by the quantum Zeno effect: in the limit of infinitely fast decoherence, the transitions stop. If the measurements are not sufficiently frequent, an opposite quantum anti-Zeno effect occurs, in which the transitions are accelerated with faster decoherence. Using two common NA-MD approaches, fewest switches surface hopping and decoherence-induced surface hopping, combined with analytic examination, we demonstrate that including decoherence into NA-MD slows down NA transitions; however, many realistic systems operate in the anti-Zeno regime. Therefore, it is important that NA-MD methods describe both Zeno and anti-Zeno effects. Numerical simulations of charge trapping and relaxation in graphitic carbon nitride suggest that time-dependent NA Hamiltonians encountered in realistic systems produce robust results with respect to errors in the decoherence time, a favorable feature for NA-MD simulations.

Great Influence of Pressure and Isotope Effects on Nonradiative Charge Loss in Hybrid Organic-Inorganic Perovskites.

The intrinsic softness of hybrid organic-inorganic perovskites (HOIPs) allows their lattice and optoelectronic performance to be tunable to external pressure. Using nonadiabatic (NA) molecular dynamics, we demonstrate that a mild pressure accelerates hot electron relaxation and suppresses nonradiative electron-hole recombination in CH3NH3PbI3. Both processes are governed by NA coupling, which is enhanced between the electronic states of the quasi-continuous bands while is decreased between the band-edge states by reducing the electron-hole wave function overlap. Hydrogen/deuterium isotope exchange alleviates the pressure-induced NA coupling by increasing lattice rigidity and decreasing wave function overlap, slowing down both the hot electron relaxation and electron-hole recombination processes. The simulated time scales of sub-3 ps for hot electron relaxation and half nanoseconds for recombination agree well with the experiments. The study suggests that the isotope exchange can mitigate the pressure-caused fast losses of hot electrons and further prolong the charge carrier lifetime in HOIPs.

Interpolating Nonadiabatic Molecular Dynamics Hamiltonian with Bidirectional Long Short-Term Memory Networks.

Essential for understanding far-from-equilibrium processes, nonadiabatic (NA) molecular dynamics (MD) requires expensive calculations of the excitation energies and NA couplings. Machine learning (ML) can simplify computation; however, the NA Hamiltonian requires complex ML models due to its intricate relationship to atomic geometry. Working directly in the time domain, we employ bidirectional long short-term memory networks (Bi-LSTM) to interpolate the Hamiltonian. Applying this multiscale approach to three metal-halide perovskite systems, we achieve two orders of magnitude computational savings compared to direct ab initio calculation. Reasonable charge trapping and recombination times are obtained with NA Hamiltonian sampling every half a picosecond. The Bi-LSTM-NAMD method outperforms earlier models and captures both slow and fast time scales. In combination with ML force fields, the methodology extends NAMD simulation times from picoseconds to nanoseconds, comparable to charge carrier lifetimes in many materials. Nanosecond sampling is particularly important in systems containing defects, boundaries, interfaces, etc. that can undergo slow rearrangements.

Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis.

Insightful understanding of defect properties and prevention of defect damage are among the biggest issues in the development of photoelectronic devices based on wide-gap III-nitride semiconductors. Here, we have investigated the vacancy-induced carrier nonradiative dynamics in wide-gap III-nitrides (GaN, AlN, and AlxGa1-xN) by ab initio molecular dynamics and nonadiabatic (NA) quantum dynamics simulations since the considerable defect density in epitaxy samples. E-h recombination is hardly affected by Vcation, which created shallow states near the VBM. Our findings demonstrate that VN in AlN creates defect-assisted nonradiative recombination centers and shortens the recombination time (τ) as in the Shockley-Read-Hall (SRH) model. In GaN, VN improves the NA coupling between the CBM and the VBM. Additionally, increasing x in the AlxGa1-xN alloys accelerates nonradiative recombination, which may be an important issue in further improving the IQE of high Al-content AlxGa1-xN alloys. These findings have significant implications for the improvement of wide-gap III-nitrides-based photoelectronic devices.

Lattice softness regulates recombination and lifetime of carrier in Germanium doped CsPbI2Br perovskite: First principles DFT and NAMD simulations

Perovskite materials are characterized by high concentration of intrinsic defects. These defects lead to non-radiative recombination of electron and hole pairs, which is one of the major factors leading to the poor performance of the optoelectronic devices fabricated from these materials. Using the first-principles method, we have demonstrated that energy loss due to non-radiative recombination is suppressed in defective CsPbI2Br (D-CsPbI2Br) with the doping of Germanium (Ge) in CsGexPb1-xI2Br (x ​= ​0.15). Bromine vacancy (VBr) in CsPbI2Br introduces localized states as seen in the PDOS, however, doping of Ge eliminates these states. Using nonadiabatic molecular dynamics (NA-MD) and time-domain density functional theory, we show that the lifetime of the charge carriers is extended in Ge-doped CsPbI2Br (D-GeCsPbI2Br) by a factor of 3 and the dephasing time shortens to 6.2 ns. The electron localization function (ELF) plots of bulk CsPbI2Br (B–CsPbI2Br) show that charge localization increases around the Ge atom and it decreases the interaction between Pb atoms. In D-CsPbI2Br, phonons from a wide range of frequencies participate in scattering, and weak non-adiabatic (NA) coupling between electron and phonon in association with phonon modes in the low-frequency spectrum is responsible for extending the lifetime of charge carriers. Strong dynamic disorder in molecular dynamics (MD) simulations points to softening of lattice in D-GeCsPbI2Br. The increase in lattice softness of the Ge-doped is confirmed by the reduced value of bulk modulus (13.2 ​GPa) in D-GeCsPbI2Br as compared to the value in D-CsPbI2Br (13.6 ​GPa). Computing inverse participation ratio (IPR) gives the degree of localization of charge in the valence-band maximum (VBM) and conduction-band minimum (CBM). We have investigated the behavior of IPR and carrier lifetime with temperature, and based on these results, we found that lattice softness and a lifetime of charge carriers increase in D-GeCsPbI2Br.

Rapid Interlayer Charge Separation and Extended Carrier Lifetimes due to Spontaneous Symmetry Breaking in Organic and Mixed Organic-Inorganic Dion-Jacobson Perovskites.

Promising alternatives to three-dimensional perovskites, two-dimensional (2D) layered metal halide perovskites have proven their potential in optoelectronic applications due to improved photo- and chemical stability. Nevertheless, photovoltaic devices based on 2D perovskites suffer from poor efficiency owing to unfavorable charge carrier dynamics and energy losses. Focusing on the 2D Dion-Jacobson perovskite phase that is rapidly rising in popularity, we demonstrate that doping of complementary cations into the 3-(aminomethyl)piperidinium perovskite accelerates spontaneous charge separation and slows down charge recombination, both factors improving the photovoltaic performance. Employing ab initio nonadiabatic (NA) molecular dynamics combined with time-dependent density functional theory, we demonstrate that cesium doping broadens the bandgap by 0.4 eV and breaks structural symmetry. Assisted by thermal fluctuations, the symmetry breaking helps to localize electrons and holes in different layers and activates additional vibrational modes. As a result, the charge separation is accelerated. Simultaneously, the charge carrier lifetime grows due to shortened coherence time between the ground and excited states. The established relationships between perovskite composition and charge carrier dynamics provide guidelines toward future material discovery and design of perovskite solar cells.

Improved Defect Tolerance and Charge Carrier Lifetime in Tin-Lead Mixed Perovskites: Ab Initio Quantum Dynamics.

Simulations by nonadiabatic (NA) molecular dynamics demonstrate that mixing tin with lead in CH3NH3PbI3 can passivate the midgap state created by an interstitial iodine (Ii) via the imposed compressive strain and upshifted valence band maximum, reduce NA coupling by decreasing electron-hole wave functions overlap, and shortens pure-dephasing time by introducing high-frequency phonon modes. Thus, the charge carrier lifetime extends to 3.6 ns due to the significantly reduced nonradiative electron-hole recombination, which is an order of magnitude longer than the Ii-containing CH3NH3PbI3, over 2.5 times longer than the pristine CH3NH3PbI3 (1.4 ns), and even 1.7 times longer than the tin-lead mixed perovskite without the Ii defects (2.1 ns). Tin-lead alloying simultaneously increases the Ii defect formation energy to 0.402 eV from 0.179 eV in CH3NH3PbI3, which effectively enhances defect tolerance by reducing the defect concentration. The study reveals the factors controlling the enhanced performance of tin-lead mixed perovskite solar cells.

Enhancing the photoelectrochemical activity of monoclinic BiVO4 by discretizing oxygen vacancies: insights from DFT calculations.

Monoclinic bismuth vanadate (BiVO4) has emerged as an excellent optically active photoanode material due to its unique physical and chemical properties. Experiments reported that the low concentration of oxygen vacancies enhances the photoelectrochemical (PEC) activity of BiVO4, but the high concentration of oxygen vacancies decreases the charge carrier lifetime. Using time-domain density functional theory and molecular dynamics, we have demonstrated that the distribution of oxygen vacancies has strong effects on the static electronic structure and nonadiabatic (NA) coupling of the BiVO4 photoanode. The localized oxygen vacancies create charge recombination centers within the band gap and enhance the NA coupling between the VBM and the CBM, resulting in fast charge and energy losses. By contrast, the discrete oxygen vacancies can eliminate the charge recombination centers and decrease the NA coupling between the VBM and the CBM, enhancing the PEC activity of monoclinic BiVO4. Our study suggests that the PEC performance of a photoanode can be improved by changing the distribution of oxygen vacancies.

Anion Doping Delays Nonradiative Electron-Hole Recombination in Cs-Based All-Inorganic Perovskites: Time Domain ab Initio Analysis.

Using time-domain density functional theory combined with nonadiabatic (NA) molecular dynamics, we demonstrate that composition engineering of the X-site anions has a strong influence on the nonradiative electron-hole recombination and thermodynamic stability of cesium-based all-inorganic perovskites. Partial substitution of iodine(I) with bromine (Br) and acetate (Ac) anions reduces the NA electron-vibrational coupling by minimizing the overlap between the electron and hole wave functions and suppressing atomic fluctuations. The doping also widens the energy gap to further reduce the NA coupling and to enhance the open-circuit voltage of perovskite solar cells. These factors increase the charge carrier lifetime by an order of magnitude and improve structural stability in the series CsPbI1.88BrAc0.12 > CsPbI2Br > CsPbI3. The fundamental atomistic insights into the influence of anion doping on the photophysical properties of the all-inorganic lead halide perovskites guide the design of efficient optoelectronic materials.

Tuning the Nonradiative Electron-Hole Recombination with Defects in Monolayer Black Phosphorus.

We use nonadiabatic (NA) molecular dynamics to demonstrate that the nonradiative electron-hole recombination is delayed and accelerated by the Stone-Wales (SWs) and phosphorus divacancy (DV-(5|7)) defects in monolayer black phosphorus (BP). Both types of defects increase the bandgap by 0.1 eV without creating midgap states. Driven by P-P stretching vibrations, the recombination proceeds within 1 ns in the SW and within 100 ps in the DV-(5|7), respectively, which occurs within 332 ps in BP. The SW defect slows down recombination because the notably reduced NA coupling combined with a large bandgap competes to the long-lived coherence. In contrast, the DV defect accelerates recombination since long-lived coherence is superior to the slightly decreased NA coupling correlated with a tiny increased bandgap. The diverse time scales rationalize the broad range of charge carrier lifetimes reported experimentally. The study provides a strategy to engineer excited-state dynamics for improving the BP-based optoelectronics.

Strong Influence of the Anion Radius on the Passivation of Selenium Vacancy in Monolayer InSe: Insights from Time-Domain Ab Initio Analysis

Using nonadiabatic molecular dynamics combined with the time-domain density functional theory, we have explored the influence of selenide vacancy and passivation of anions with different radii on the nonradiative charge trapping and recombination in monolayer InSe. Our results reveal that electron–hole recombination for pristine InSe occurs within several nanoseconds due to the weak nonadiabatic (NA) coupling. Selenide vacancy generates three trap states within the band gap, enhances the NA coupling, and provides new channels for charge carrier relaxation, resulting in the significantly decreased charge carrier recombination time. Passivating the selenide vacancy with anions (O2–, S2–, and Te2–) can eliminate the trap states within the band gap and extend the charge carrier lifetimes because of the decreased NA coupling. Meanwhile, the passivation effect of anions is dramatically dependent on the type of anions, and S2– is more suitable for repairing selenide vacancy than O2– and Te2– because S2– and Se2– have much closer radii. This study provides an atomistic mechanism of the effects of selenide vacancy and anion passivation on the performance of InSe thin-film solar cells and suggests that the choice of anions with a suitable radius is valuable for prolonging the excited-state lifetime.

Nonadiabatic electron-phonon coupling and its effects on superconductivity

As one of the most striking phenomena in many-body systems, the breakdown of the adiabatic Born-Oppenheimer (ABO) approximation is essential for understanding and predicting the dynamics of quantum materials. Here, we demonstrate that strong nonadiabatic (NA) effects can emerge in electron-phonon coupling (EPC) and resultant superconductivity, yielding a surprisingly large contribution (up to 20%) to the total EPC strength \ensuremath{\lambda} of doped graphene/graphane and modulating the superconductivity transition temperature ${T}_{c}$ by \ensuremath{\sim}20%. The NA EPC, with a detectable isotopic effect, results from the renormalized EPC matrix elements (up to 40%) combined with the Fermi surface modulation, due to electron distributions deviating from the equilibrium. Our results imply that nonadiabaticity plays a wider and more important role than previously conceived, offering new understandings and strategies for dynamic engineering of quantum materials.

Unveiling the Valence State of Interstitial Bromine on Charge Carrier Lifetime in CH3NH3PbBr3 by Quantum Dynamics Simulation.

Interstitial halogens are detrimental to the optoelectronic properties of metal halide perovskites. Using nonadiabatic (NA) molecular dynamics, we demonstrate that the valence state of interstitial bromine strongly changes the carrier lifetimes of MAPbBr3 (MA = CH3NH3+). Both neutral and negatively charged interstitial bromine create no midgap states, and they decrease the bandgap, weaken the NA coupling, and accelerate decoherence in a different extent with respect to pristine MAPbBr3, making free charge recombination either slow down about a 3-fold or remain largely unchanged. In contrast, a positively charged interstitial bromine forms a Br trimer and introduces a deep electron trap state, causing a 1.4-fold increase of charge recombination followed by a rapid electron trapping or across the bandgap because of an enhanced NA coupling. The simulations uncover the influence of different charged interstitial bromine defects on MAPbBr3 carrier lifetimes and provide rational guidelines for optimizing perovskite solar cells.

Dimensionality reduction in machine learning for nonadiabatic molecular dynamics: Effectiveness of elemental sublattices in lead halide perovskites.

Supervised machine learning (ML) and unsupervised ML have been performed on descriptors generated from nonadiabatic (NA) molecular dynamics (MD) trajectories representing non-radiative charge recombination in CsPbI3, a promising solar cell and optoelectronic material. Descriptors generated from every third atom of the iodine sublattice alone are sufficient for a satisfactory prediction of the bandgap and NA coupling for the use in the NA-MD simulation of nonradiative charge recombination, which has a strong influence on material performance. Surprisingly, descriptors based on the cesium sublattice perform better than those of the lead sublattice, even though Cs does not contribute to the relevant wavefunctions, while Pb forms the conduction band and contributes to the valence band. Simplification of the ML models of the NA-MD Hamiltonian achieved by the present analysis helps to overcome the high computational cost of NA-MD through ML and increase the applicability of NA-MD simulations.