Nonradiative Recombination Research Articles

Matched Electron-Transport Materials Enabling Efficient and Stable Perovskite Quantum-Dot-Based Light-Emitting Diodes.

Light-emitting diodes (LEDs) based on perovskite quantum dots (QDs), abbreviated as P-QLEDs have been regarded as significantly crucial emitters for lighting and displays. Efficient and stable P-QLEDs still lack ideal electron transport materials (ETM), which could efficiently block hole, transport electron, reduce interface non-radiative recombination and possess high thermal stability. Here, we report 2,4,6-Tris(3'-(pyridine-3-yl) biphenyl-3-yl)-1,3,5-triazine (TmPPPyTz, 3P) with strong electron-withdrawing moieties of pyridine and triazine to modulate the performance of P-QLEDs. Compared with commonly used 1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi), the pyridine in 3P have a strong interaction with perovskites, which can effectively suppress the interface non-radiative recombination caused by the Pb2+ defects on the surface of QDs. In addition, 3P have deep highest occupied molecular orbital (HOMO) (enhancing hole-blocking properties), matched lowest unoccupied molecular orbital (LUMO) and excellent electron mobility (enhancing electron transport properties), realizing the carrier balance and maximizing the exciton recombination. Furthermore, high thermal resistance of 3P obviously improves the stability of QDs under variable temperature, continuous UV illumination, and electric field excitation. Resultantly, the P-QLEDs using the 3P as ETM achieved an outstanding performance with a champion EQE of 30.2 % and an operational lifetime T50 of 3220 hours at an initial luminance of 100 cd m-2, which is 151 % and about 11-fold improvement compared to control devices (EQE=20 %, T50=297 hours), respectively. These results provide a new concept for constructing the efficient and stable P-QLEDs from the perspective of selective ETM.

Performance Enhancement of Hole Transport Layer-Free Carbon-Based CsPbIBr2 Solar Cells through the Application of Perovskite Quantum Dots.

CsPbIBr2, with its suitable bandgap, shows great potential as the top cell in tandem solar cells. Nonetheless, its further development is hindered by a high defect density, severe carrier recombination, and poor stability. In this study, CsPbI1.5Br1.5 quantum dots were utilized as an additive in the ethyl acetate anti-solvent, while a layer of CsPbBr3 QDs was introduced between the ETL and the CsPbIBr2 light-harvester film. The combined effect of these two QDs enhanced the nucleation, crystallization, and growth of CsPbIBr2 perovskite, yielding high-quality films characterized by an enlarged crystal size, reduced grain boundaries, and smooth surfaces. And a wider absorption range and better energy band alignment were achieved owing to the nano-size effect of QDs. These improvements led to a decreased defect density and the suppression of non-radiative recombination. Additionally, the presence of long-chain organic molecules in the QD solution promoted the formation of a hydrophobic surface, significantly enhancing the long-term stability of CsPbIBr2 PSCs. Consequently, the devices achieved a PCE of 9.20% and maintained an initial efficiency of 85% after 60 days of storage in air. Thus, this strategy proves to be an effective approach for the preparation of efficient and stable CsPbIBr2 PSCs.

Design and Simulation for Minimizing Non-Radiative Recombination Losses in CsGeI2Br Perovskite Solar Cells.

CsGeI2Br-based perovskites, with their favorable band gap and high absorption coefficient, are promising candidates for the development of efficient lead-free perovskite solar cells (PSCs). However, bulk and interfacial carrier non-radiative recombination losses hinder the further improvement of power conversion efficiency and stability in PSCs. To overcome this challenge, the photovoltaic potential of the device is unlocked by optimizing the optical and electronic parameters through rigorous numerical simulation, which include tuning perovskite thickness, bulk defect density, and series and shunt resistance. Additionally, to make the simulation data as realistic as possible, recombination processes, such as Auger recombination, must be considered. In this simulation, when the Auger capture coefficient is increased to 10-29 cm6 s-1, the efficiency drops from 31.62% (without taking Auger recombination into account) to 29.10%. Since Auger recombination is unavoidable in experiments, carrier losses due to Auger recombination should be included in the analysis of the efficiency limit to avoid significantly overestimating the simulated device performance. Therefore, this paper provides valuable insights for designing realistic and efficient lead-free PSCs.

Enhanced Electric Field Minimizing Quasi-Fermi Level Splitting Deficit for High-Performance Tin-Lead Perovskite Solar Cells.

The quasi-Fermi level splitting (QFLS) deficit caused by the non-radiative recombination at the interface of perovskite/electron transport layer (ETL) can lead to severe open-circuit voltage (VOC) loss and thus decreases the efficiency of perovskite solar cells (PSCs), however, has received limited attention in inverted tin-lead PSCs. Herein, the strategy of constructing an extra-electric field is presented by introducing ferroelectric polymer dipoles (FPD)-β-poly(1,1-difluoroethylene)-to suppress the QFLS deficit. The directional polarization of FPD can enhance the built-in electric field (BEF) and thus promote the charge transfer at the perovskite/ETL interface, which effectively suppresses non-radiative recombination. Furthermore, the incorporation of FPD facilitates high-quality crystallization of perovskite and reduces the surface energetic disorder. Therefore, the QFLS deficit in the perovskite/ETL half-stacked device is reduced from 62 to 27 meV after incorporating FPD, and the optimized device achieves an efficiency of 23.44% with a high VOC of 0.88V. Additionally, the addition of FPD increases the activation energy for ion migration, which can reduce the effect of ion migration on the long-term stability of the device. Consequently, the FPD-incorporated device retains 88% of the initial efficiency after 1100h of continuous illumination at the maximum power point (MPP).

Uniform Phase Permutation of Efficient Ruddlesden-Popper Perovskite Solar Cells via Binary Spacers and Single Crystal Coordination.

2D Ruddlesden-Popper perovskites (RPPs) have attracted extensive attention in recent years due to their excellent environmental stability. However, the power conversion efficiency (PCE) of RPP solar cells is much lower than that of 3D perovskite solar cells (PSCs), mainly attributed to their poor carrier transport performance and excessive heterogeneous phases. Herein, the binary spacers (n-butylammonium, BA and benzamidine, PFA) are introduced to regulate the crystallization kinetics and n-value phase distribution to form uniform phase permutation of RPP films. The study then incorporates n = 5 BA2MA4Pb5I16 memory single crystal to achieve ultrafast stepped-type carrier transport from the low n-value phases to the high n-value phases in the high-quality (BA0.75PFA0.25)2MA4Pb5I16 films. These binary spacers and single-crystal-assisted crystallization strategies produce high-quality films, leading to fast carrier extraction and significant nonradiative recombination suppression. The resulting PSC presents a champion PCE of 21.15% with an impressive open circuit voltage (VOC) of 1.26V, which is the record high efficiency and VOC for low n-value RPP solar cells (n ≤ 5).

11.88% Efficient Flexible Ag-Free CZTSSe Solar Cell: Spontaneously Tailoring the Alkali Metal Level.

Alkali metal is the requirement for highly efficient Cu2ZnSn(S, Se)4 (CZTSSe) solar cells, thus it is crucial to additionally incorporate alkali metal into the absorber layer for flexible solar cells. However, the efficiency of flexible CZTSSe devices reported to date, based on the conventional alkali incorporation strategies, still lags behind those made on rigid substrates. One of the main issues is the inability to control the alkali content and distribution in the absorber layer. Here, a facile alkaline incorporation approach is proposed, effectively regulating the content and distribution of alkali metals in the film. Such a method can spontaneously tailor the alkali metal content to a proper level, thus leading to the suppression of non-radiative recombination and a better carrier transport through the enhanced film quality and the optimized band binding structure. Finally, a champion flexible CZTSSe solar cell with an efficiency of 11.88% is achieved, the highest reported efficiency for a CZTSSe solar cell without noble Ag doping. This study affords an innovative spontaneous alkali-doping design for the preparation of high-performance flexible CZTSSe solar cells and provides a deeper insight into the extent of alkali metal doping.

Dibenzothiophene S, S-Dioxide-Containing Dipolar Molecules As Efficient Hole-Transport Materials for p-i-n Perovskite Solar Cells.

Organic-inorganic hybrid perovskite solar cells (OIH-PSCs) have developed rapidly in the past decade, and the commercialization of OIH-PSCs demands low-cost hole-transport materials (HTMs) with high performance and stability. The present study synthesized two organic HTMs containing dibenzothiophene S-dioxide as the acceptor unit and triphenylamine as the donor (denoted by TPAF-SO2 and TPA-SO2). In TPAF-SO2, the methoxy group and adjacent fluorine atom were introduced to decrease the highest occupied molecular orbital energy level. In TPA-SO2, the methyl sulfide group is the end group that can passivate the lead ion. TPAF-SO2 and TPA-SO2 exhibit hole-transport mobilities as high as 1.12 × 10-3 and 2.31 × 10-3 cm2 v-1 s-1, respectively, and strongly passivate Pb vacancies. Compared with TPAF-SO2, TPA-SO2 is more suitable for the growth of perovskite crystals. The perovskite grown on the latter has a lower trap density and higher carrier mobility; thus, both the nonradiative recombination and the charge-transport loss are decreased. The OIH-PSC based on TPA-SO2 as the HTM achieved a power conversion efficiency (PCE) as high as 22.08%, whereas the device based on TPAF-SO2 achieved a PCE of only 18.42%. In addition, the unencapsulated device based on TPA-SO2 can maintain 85% of the initial PCE after being stored in N2 for 1200 h, whereas the device based on TPAF-SO2 decayed rapidly to zero in 800 h under the same conditions.

Sputter-deposited TiOx thin film as a buried interface modification layer for efficient and stable perovskite solar cells

Despite perovskite solar cells (PSCs) based on a SnO2 hole-blocking layer (HBL) are achieving excellent performance, the non-perfect buried interface between the SnO2 HBL and the perovskite layer is still an obstacle in achieving further improvement in power conversion efficiency (PCE) and stability. The poor morphology with numerous defects and the energy level mismatch at the buried interface constrain the open circuit voltage and cause instability. Herein, a sputter-deposited TiOx thin film is used as a buried interface modification layer to address the aforementioned issues. Utilizing in situ grazing-incidence small-angle X-ray scattering (GISAXS) during the sputter deposition, we monitor and unveil the growth process of the TiOx thin film, identifying a 10 nm thickness optimum. The defects at the buried interface are passivated through tuning the growth, leading to a suppressed non-radiative recombination and improved PCE (from 22.19 % to 23.93 %). The evolution of the device performance and the degradation process of PSCs using operando grazing-incidence wide-angle X-ray scattering (GIWAXS) under the protocol ISOS-L-1I explains the enhanced stability introduced by the buried interface modification via a sputter-deposited TiOx thin layer. The perovskite decomposition process and the detrimental formation of PbI2 are both slowed down by the TiOx thin layer.

Enhancing Optoelectronic Performance of All-Inorganic Double Perovskites via Halogen Doping: Synergistic Screening Strategies and Multiscale Simulations.

Designing all-inorganic double perovskites through element mixing is a promising strategy to enhance their optoelectronic performance and structural stability. The complex interplay between multilevel structures and optoelectronic properties in element-mixed double perovskites necessitates further in-depth theoretical exploration. In this study, we employ screening strategies and multiscale simulations combining first-principles methods and device-scale continuum models to identify two novel element-mixed compounds, Rb2AgInCl3I3 and Cs2AgInCl3I3, as promising candidates for photovoltaic applications. These compounds exhibit favorable structural factors and suitable direct band gaps. Theoretical investigations using first-principles methods with the HSE06 functional reveal direct band gaps of 0.98 and 1.26 eV for Rb2AgInCl3I3 and Cs2AgInCl3I3, respectively, with corresponding optical absorption coefficients exceeding 105 cm-1 in the visible light range. Cs2AgInCl3I3 features high charge mobilities of approximately 20 cm2·V-1·s-1 and a notable single-junction spectroscopic limited maximum efficiency (SLME) of 25.54%. Further analysis using the device-scale continuum model simulated the nonradiative recombination effects on power conversion efficiency, integrating quantum-mechanically calculated optoelectronic properties. These theoretical investigations, which bridge composition engineering with multiscale simulations, provide valuable insights into screening novel, lead-free, halogen-mixed double metal perovskite optoelectronic devices, highlighting their potential for high-performance solar energy applications.

Suppressed Thermal Quenching via Tetrafluoroborate-Induced Surface Reconstruction of CsPbBr3 Nanocrystals for Efficient Perovskite Light-Emitting Diodes.

Although metal-halide perovskite nanocrystals (NCs) have garnered significant attention for optoelectronic applications, the presence of electrically insulating organic ligands in CsPbBr3 NCs hinders efficient charge injection and transportation in light-emitting diodes (LEDs). A common approach to address this issue involves ligand exchange with shorter ligands and precise control of the surface ligand density through additional purification steps. Nevertheless, the practical application of these methods has been hindered by their poor structural integrity and high surface-defect density, which remain a challenge. Our investigation reveals that NOBF4 treatment effectively replaces native ligands with BF4- anions, in which BF4- anions are readily coordinated with the positively charged CsPbBr3 surface metal centers, thereby improving the photoluminescence quantum yield (PLQY) and thermal stability. In particular, the presence of BF4- anions coordinated at CsPbBr3 surfaces efficiently suppresses the pathway of excitons toward thermally activated nonradiative recombination, leading to minimal thermal quenching and superior device performance in green-emitting PeLEDs. Notably, PeLEDs based on CsPbBr3 NCs with the reconstructed surface via NOBF4 treatment exhibit an improved current efficiency of 31.12 cd/A and an external quantum efficiency of 11.24%, increased by 2.8 times compared to that of the pristine sample, indicating the enhanced hole-electron injection and transport into the CsPbBr3 NCs. Therefore, our results highlight the potential of NOBF4 as a versatile reagent for the ligand exchange and surface passivation of CsPbBr3 NCs, thereby offering promising prospects for the development of stable, high-performance PeLEDs.

Buried interface management for FAPbI3-based perovskite solar cells via multifunctional benzothiadiazole derivatives

Attaining high efficiency in perovskite solar cells (PSCs) often necessitates effective interfacial passivation, which poses challenges, especially concerning the buried interface due to the dissolution of passivation agents during perovskite deposition. In this work, we report a multifunctional modification strategy by introducing the variations of benzothiadiazole (BTD) derivatives to function as interface-modified layers in PSCs. This buried interface modification mitigates oxygen vacancies on the SnO2 surface and fine-tunes the energy level of the electron transport layer, resulting in an improved alignment with the FAPbI3 layer. Furthermore, the introduced BTD derivatives led to the improved crystallinity of FAPbI3 films as well as suppressed the non-radiative recombination losses through passivating the interfacial defects. Consequently, a device with modified SnO2 exhibited an enhanced power conversion efficiency (PCE) of 25.04% along with an improved long-term device stability.

Two-dimensional Ruddlesden-Popper perovskite solar cells with an efficiency exceeding 19 % by inserting a self-assembled monolayer

Two-dimensional Ruddlesden-Popper (2DRP) phase perovskites have excellent long-term environmental and structure stability. However, the efficiency of 2DRP perovskite solar cells (PSCs) still lags seriously behind 3D counterparts due to the large exciton binding energy between the large-volume organic spacer and the inorganic plate compared to their 3D analogs. Here, a thin layer of self-assembled monolayer material (2-(3,6-dibromo-9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz-Br) is employed between poly (3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) and β-guanidinopropanoic acid (β-GUA)-based perovskite film (β-GUA)2(FA)4Pb5I16 for efficient and stable 2DRP-based PSCs. The 2PACz-Br-based 2DRP perovskite films show superior crystallinity and quality compared with the control perovskite films. The defect density in 2PACz-Br-based perovskite films is reduced, and the non-radiative recombination is further suppressed. The experimental results show that introducing 2PACz-Br can effectively promote the matched energy levels between the perovskite thin film and the charge-carrier transport layer. Benefiting from the conducive collection and transmission of charge carriers, (β-GUA)2(FA)4Pb5I16 (n = 5)-based PSCs can realize an outstanding power conversion efficiency of 19.13 %, much higher than that of devices without 2PACz-Br modification (17.70 %). Moreover, 2PACz-Br-based 2DRP PSCs show better stability than the control devices. Our work paves the way to efficient and stable 2DRP-based PSCs by inserting a multifunctional self-assembled monolayer.

A Novel Upside-Down Thermal Annealing Method Toward High-Quality Active Layers Enables Organic Solar Cells with Efficiency Approaching 20.

The emerging non-fullerene acceptors with low voltage losses have pushed the power conversion efficiency of organic solar cells (OSCs) to ≈20% with auxiliary morphology optimization. Thermal annealing (TA), as the most widely adopted post-treatment method, has been playing an essential role in realizing the potential of various material systems. However, the procedure of TA, i.e., the way that TA is performed, is almost identical among thousands of OSC papers since ≈30 years ago other than changes in temperature and annealing time. Herein, a reverse thermal annealing (RTA) technique is developed, which can enhance the dielectric constant of active layer film, thereby producing a smaller Coulomb capture radius (14.93 nm), meanwhile, forming a moderate nano-scale phase aggregation and a more favorable face-on molecular stacking orientation. Thus, this method can reduce the decline in open circuit voltage of the conventional TA method by achieving decreased radiative (0.334 eV) and non-radiative (0.215 eV) recombination loss. The power conversion efficiency of the RTA PM6:L8-BO-X device increases to 19.91% (certified 19.42%) compared to the TA device (18.98%). It is shown that this method exhibits a superb universality in 4 other material systems, revealing its dramatic potential to be employed in a wide range of OSCs.

Transient Leakage Electroluminescence of Quantum-Dot Light-Emitting Diodes.

Parasitic emission or leakage emission caused by electron leakage to a hole transport layer in quantum-dot light-emitting diodes (QLEDs) critically impacts device efficiency and operational stability. The buildup dynamics of such emission channels, however, was insufficiently researched. Herein, we investigate transient electroluminescence dynamics of leakage emission in red/green/blue (R/G/B) QLEDs and reveal notable contrast for R and G. In RQLEDs, leakage emission exhibits delayed turning-on than primary emission, which is attributed to much slower filling up from lower-energy electron states and the initial quenching by nonradiative recombination with trapped holes. For GQLEDs, leakage emission turns on much more concurrently, and emission preferably starts from higher energy states. For R/G QLEDs, under varied offset voltage modulation, the current efficiency of primary emission is invert-correlated to leakage emission, reconfirming leakage emission as a loss indicator.

Surface Regulation via Carboxylate Polymer for Efficient and Stable CsPbI2Br Perovskite Solar Cells.

CsPbI2Br perovskite solar cell (PSC) is a promising candidate for high-efficiency single-junction and tandem solar cells. However, due to the numerous surface defects of the CsPbI2Br film and the mismatch of energy levels at the CsPbI2Br/charge transport layer interface, the power conversion efficiency (PCE) of CsPbI2Br PSC is still significantly lower than the theoretical limits. To alleviate those issues, in this work, a carboxylate-based p-type polymer, TTC-Cl, is employed to modify the surface of CsPbI2Br layer. TTC-Cl can interact with uncoordinated Pb2+, thereby mitigating surficial defects of CsPbI2Br film and reducing non-radiative recombination losses. Furthermore, TTC-Cl also improves the band properties of the CsPbI2Br thin film surface, rendering it more p-type, which facilitates hole transport. Consequently, the CsPbI2Br PSCs with TTC-Cl modification achieve a remarkable PCE of 17.81%, which is notably higher than that of counterpart without TTC-Cl (15.87%). Moreover, CsPbI2Br PSCs with TTC-Cl modification also exhibit better stability. This work highlights the importance of surface regulation via carboxylate polymer for further enhancing the performance of CsPbI2Br PSCs.

Lattice Dynamics of Cu2ZnSn(S x ,Se1-x )4 Kesterite Thin-Film Solar Cells Studied by Nuclear Inelastic Scattering.

Phonons play a crucial role in thermalization and non-radiative recombination losses in semiconductors, impacting the power conversion efficiency of solar cells. To shed light on the lattice dynamics in Cu2ZnSn(S x ,Se1-x )4 (CZTSSe) thin-film solar cells and validate the extensive number of theoretical studies, we determine the 119Sn-partial phonon density of states (Sn-PDOS) by nuclear inelastic X-ray scattering. CZTSSe-based devices, one with near-stoichiometric and two with off-stoichiometric compositions, are investigated, and the results are correlated with the corresponding power conversion efficiencies (PCEs) of 3.2, 7.6, and 10.6%, respectively. Compared to the near-stoichiometric cell, the main Sn-PDOS peak of the off-stoichiometric cells broadens and slightly shifts to higher energy; this effect is correlated with the type and concentration of the characteristic defects in the studied samples. Furthermore, the Sn-PDOS of the 10.6% device is also obtained under operando (maximum power point) and open-circuit conditions. A comparison of the Sn-PDOS before and after the operando measurements suggests structural changes, likely due to the formation of metastable defects. In agreement with the theoretical studies, the Sn-PDOS of the CZTSSe absorber shows additional peaks compared to CZTSe attributed to coupling of Sn to the vibrations of Se and S atoms. This work paves the way for a further understanding of the lattice dynamics and subsequent enhancement of the PCEs of thin-film solar cells as well as other applied materials and devices containing elements that are Mössbauer-active and hence suitable for nuclear inelastic scattering.

Time, temperature and concentration resolved Yb3+ luminescence study in co-sputtered Cu2-xGaxS2 (0.1 < x < 1.6) thin films with a Cu–Ga composition gradient

The broad class of Cu(Al,Ga,In) (S,Se,Te)2 solar absorber materials when doped with Yb3+ are interesting for thin film based luminescent solar concentrator (LSC's) application. In this work the strong and broad absorption properties of co-sputtered CuGaS2 (CGS) thin films combined with the luminescent properties of Yb are reported. Energy-dispersive x-ray spectroscopy (EDS), x-ray diffraction, transmission, excitation, and temperature dependent emission as well as radiative lifetime measurements are performed on thin films with varying Cu:Ga ratios and Yb3+ concentrations. It is found that Yb3+ emission can be broadly sensitized by the host in the range of 200–600 nm. A lower Cu:Ga ratio, crystallinity and post annealing in air provides a positive impact on the sensitization of Yb3+ emission. The temperature dependent time integrated decay curves show a clear thermal energy barrier of about 0.2 eV. Because the exponential tail, with a lifetime of 110 μs, is constant with temperature, we conclude that the barrier is connected to the thermal release of electrons trapped at the Yb2+ ground state. The low energy transfer efficiency from the host to the Yb dopant is attributed to efficient non-radiative electron-hole pair recombination. The prospects and design criteria of Cu(Al,Ga,In) (S,Se,Te)2 solar absorber materials for LSC applications is the further subject of the discussion.

Enhanced charge carrier transport and defects mitigation of passivation layer for efficient perovskite solar cells

Surface passivation has been developed as an effective strategy to reduce trap-state density and suppress non-radiation recombination process in perovskite solar cells. However, passivation agents usually own poor conductivity and hold negative impact on the charge carrier transport in device. Here, we report a binary and synergistical post-treatment method by blending 4-tert-butyl-benzylammonium iodide with phenylpropylammonium iodide and spin-coating on perovskite surface to form passivation layer. The binary and synergistical post-treated films show enhanced crystallinity and improved molecular packing as well as better energy band alignment, benefiting for the hole extraction and transfer. Moreover, the surface defects are further passivated compared with unary passivation. Based on the strategy, a record-certified quasi-steady power conversion efficiency of 26.0% perovskite solar cells is achieved. The devices could maintain 81% of initial efficiency after 450 h maximum power point tracking.

Hierarchical Nanostructures CuBi2O4 Integrated with Polyaniline Nanofibrous for Boosting Hole Extraction in Carbon-Based Perovskite Solar Cells.

Toward commercialization of carbon-based perovskite solar cells (C-PSCs), it is crucial to innovatively design inorganic hole transport layer materials that excel in extracting and transporting charge carriers to promote their photoelectric conversion efficiency (PCE). In this work, a novel and high-connectivity CuBi2O4-polyaniline nanofibrous (CuBi2O4-PN) reticular structure is created by integrating CuBi2O4 hierarchical microspheres (CuBi2O4 MS) with polyaniline nanofibrous. The introduction of CuBi2O4-PN as a hole transport layer (HTL) notably enhances the contact quality of the devices and substantially reduces the surface defects of C-PSCs. In a comparative analysis under identical experimental conditions, MAPbI3 devices incorporating CuBi2O4-PN HTL demonstrated a PCE of 14.79%, achieving a 44.3% increase over the reference device (10.25%). CuBi2O4-treated C-PSCs retained 89.9% of their original PCE after 45 days in storage, and they demonstrated improved stability over a longer time frame. This remarkable improvement in device performance can be attributed to the effective suppression of nonradiative recombination and the enhancement of the carrier transfer process in the device. Additionally, the unique interconnected reticular structure of CuBi2O4-PN provides efficient pathways for hole transfer, significantly contributing to the enhanced efficiency of the device.

Additive engineering for Sb2S3 indoor photovoltaics with efficiency exceeding 17%

Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb2S3 is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb2S3 solar cells is limited by nonradiative recombination, which is dependent on the quality of the absorber films. Additive engineering is an effective strategy to fine tune the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb2S3 films to be controlled, enabling the deposition of high-quality Sb2S3 absorbers with reduced grain boundary density, optimized band positions, and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb2S3 films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb2S3 absorber films, the MEA-modulated Sb2S3 solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5 G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb2S3 IPVs. Furthermore, we construct high performance large-area Sb2S3 IPV minimodules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb2S3 photovoltaics for indoor energy harvesting.