Non-radiative Recombination Losses Research Articles

Restraint of Nonradiative Recombination via Modulation of n-Phase Distribution through Interfacial Lithium Salt Insertion for High-Performance Pure-Blue Perovskite LEDs.

Quasi-two-dimensional perovskite has been widely used in blue perovskite light-emitting diodes. However, the performance of these devices is still hampered by random phase distribution, nonradiative recombination, and imbalanced carrier transport. In this work, an effective strategy is proposed to mitigate these limitations by inserting lithium salts at the interfaces between the hole transport layer (HTL) and the perovskite layer. The perovskite film on the inserted Li2CO3 layer exhibits reasonable n-value redistribution, which leads to the repressive nonradiation recombination and enhanced carrier transport. Moreover, the inserted Li2CO3 layer also improves the electrical conductivity of PEDOT:PSS and hinders indium ion diffusion from the PEDOT:PSS layer to the perovskite film, which inhibits exciton quenching and nonradiative recombination loss at the HTL/perovskite interface. Taking advantage of these merits, we have successfully fabricated efficient pure-blue PeLEDs with an external quantum efficiency of 6.2% at 472 nm and a luminance of 726 cd cm-2. The restraint of nonradiative recombination at the interface offers a promising approach for efficient pure-blue PeLEDs.

Controlled phase distribution of quasi-2D perovskite enables improved electroluminescence

Quasi-two-dimensional (quasi-2D) perovskites are increasingly explored for integration into light-emitting diodes (LEDs) as light-emissive layers. However, the quasi-2D perovskite films likely exhibit non-uniform dimensional phase distribution and irregular internal crystal structures. These characteristics are known to contribute to undesirable effects, including non-radiative recombination losses and radiative recombination in perovskites of various dimensions, impeding the realization of efficient electroluminescence and high color purity in LEDs. In this study, we present an investigation on the correlation between the dimensional distribution of quasi-2D perovskites and charge carrier behavior by modulating anti-solvent dripping during the film fabrication processes. We provide a comprehensive analysis of the impact of controlled dimensional distribution on charge injection and recombination processes associated with the performance of quasi-2D perovskite LEDs. Our work emphasizes the crucial role played by controlled dimensionality in quasi-2D perovskites in realizing efficient and stable perovskite-based LEDs.

Solvent‐Assisted Surface Modification Using Metallocene‐Based Molecules for High‐Efficiency Perovskite/Silicon Tandem Solar Cells

AbstractThe presence of a high density of defects at the perovskite/electron transport layer (ETL) interface results in significant nonradiative recombination losses, thus impeding the efficiency enhancement of perovskite/silicon tandem solar cells (TSCs). In this investigation, a metallocene‐based molecule, cobalt (III) dichlorophene hexafluorophosphate (CcPF6), is employed for perovskite surface passivation. To maximize its efficacy, the molecule is dissolved in a mixed solvent of acetonitrile and chlorobenzene, leading to the reconstruction of the perovskite surface and effective passivation of surface defects. This modification strategy substantially enhances the overall efficiency of perovskite/silicon tandem solar cells by mitigating the issue of low fill factor resulting from non‐uniform coating of the top perovskite layer on the textured silicon bottom cell. Leveraging a double‐sided textured silicon heterojunction (HJT) bottom cell, a certified power conversion efficiency (PCE) of 30.43% for a monolithic perovskite/silicon TSC (1.00 cm2) is achieved, featuring an open‐circuit voltage (Voc) of 1.93 V and a fill factor (FF) of 78.43%. After storage in the drying cabinet (5% humidity at 20 °C) for 1000 h, the device retains 94.27% of its initial performance.

Effects of 3-Bromo-N-methylbenzylamine modification on CsPbI2Br perovskite films and perovskite solar cells

In this work, 3-Bromo-N-methylbenzylamine (3-B-N-MB) was designed to modify CsPbI2Br/hole transport layer interface to reduce the interfacial non-radiative recombination loss of all-inorganic CsPbI2Br perovskite solar cells (PSCs). The effects of 3-B-N-MB modification on the morphology, structure, optical absorption, defect concentration, carrier lifetime, energy level, hydrophobicity of CsPbI2Br perovskite film and device performance, and carrier dynamics, as well as their mechanisms were systematically studied. The results show that the lone pair electrons in the N atom of N-H group in strongly alkaline 3-B-N-MB is more conducive to coordinate with uncoordinated Pb2+/Cs+ in CsPbI2Br, meanwhile the H atom of N-H group in 3-B-N-MB can react with I−/Br− in CsPbI2Br through hydrogen bonding, passivating interface defects to increase grain size and enhance the crystallinity and density of CsPbI2Br films, optimizing interface energy level matching to promote carrier transport, thus suppressing interfacial non-radiative recombination to improve device performance. As a result, the PCE of the 3-B-N-MB modified PSCs significantly enhanced ∼32.5 % as compared to that of the pristine one and the air stability of the device has also improved. The 3-B-N-MB modification provides a new strategy to enhance the efficiency and stability of all-inorganic perovskite solar cells.

Optimizing the power conversion processes in diluted donor/acceptor heterojunctions towards 19.4% efficiency all-polymer solar cells

All polymer solar cells (all-PSCs) promise mechanically-flexible and morphologically-stable organic photovoltaics and have aroused increased interests very recently. However, due to their disorderly conformation structures within the photoactive film, inefficient charge generation and carrier transport are observed which lead to inferior photovoltaic performance compared to smaller molecular acceptor-based photovoltaics. Here, by diluting PM6 with a cutting-edge polymeric acceptor PY-IT and diluting PY-IT with PM6 or D18, donor-dominating or acceptor-dominating heterojunctions were prepared. Synchrotron X-ray and multiple spectrometer techniques reveal that the diluted heterojunctions receive increased structural order, translating to enhanced carrier mobility, improved exciton diffusion length, and suppressed non-radiative recombination loss during the power conversion. As the results, the corresponding PM6+1%PY-IT/PY-IT+1%D18 and PM6+1%PY-IT/PY-IT+1%PM6 devices fabricated by layer-by-layer deposition received superior power conversion efficiency (PCE) of 19.4% and 18.8% respectively, along with enhanced operational lifetimes in air, outperforming the PCE of 17.5% in the PM6/PY-IT reference device.

Heterojunction interface engineering of C60 electron transport layer insertion enables efficient Cd-free Sb2Se3 solar cells

Antimony selenide (Sb2Se3) emerges as a promising semiconductor for solar energy conversion, attributed to its high light absorption and excellent photoelectric properties, coupled with notable stability and consistent stoichiometry. Yet, its application in thin-film solar cells is limited by non-radiative recombination losses at suboptimal heterojunction interfaces. Addressing this, we propose a strategy employing a C60 electron transport layer (ETL), thermally evaporated between the Sb2Se3 absorber and SnOx buffer layer. This approach not only increases the carrier density in SnOx but also passivates harmful defects like VO and OH−, thus reducing interfacial recombination. Incorporating C60 ETL improves the fill factor (FF) and open-circuit voltage (VOC) of the Sb2Se3 device, achieving a maximum power conversion efficiency (PCE) of 6.65 %. This finding highlights the significance of ETL-dependent interfacial engineering in enhancing Sb2Se3 solar cell performance, offering a novel and accessible solution to the primary challenge in developing Cd-free Sb2Se3 solar cells.

SnSe2 Quantum Dots and Chlorhexidine Acetate Suppress Synergistically Non-radiative Recombination Loss for High Efficiency and Stability Perovskite Solar Cells.

Non-radiative recombination losses limit the property of perovskite solar cells (PSCs). Here, a synergistic strategy of SnSe2QDs doping into SnO2 and chlorhexidine acetate (CA) coating on the surface of perovskite is proposed. The introduction of 2D SnSe2QDs reduces the oxygen vacancy defects and increases the carrier mobility of SnO2. The optimized SnO2 as a buried interface obviously improves the crystallization quality of perovskite. The CA containing abundant active sites of ─NH2/─NH─, ─C═N, CO, ─Cl groups passivate the defects on the surface and grain boundary of perovskite. The alkyl chain of CA also improves the hydrophobicity of perovskite. Moreover, the synergism of SnSe2QDs and CA releases the residual stress and regulates the energy level arrangement at the top and bottom interface of perovskite. Benefiting from these advantages, the bulk and interface non-radiative recombination loss is greatly suppressed and thereby increases the carrier transport and extraction in devices. As a result, the best power conversion efficiency (PCE) of 23.41% for rigid PSCs and the best PCE of 21.84% for flexible PSCs are reached. The rigid PSC maintains 89% of initial efficiency after storing nitrogen for 3100 h. The flexible PSCs retain 87% of the initial PCE after 5000 bending cycles at a bending radius of 5 mm.

Alkyl Chains Tune Molecular Orientations to Enable Dual Passivation in Inverted Perovskite Solar Cells.

Nonradiative recombination losses occurring at the interface pose a significant obstacle to achieve high-efficiency perovskite solar cells (PSCs), particularly in inverted PSCs. Passivating surface defects using molecules with different functional groups represents one of the key strategies for enhancing PSCs efficiency. However, a lack of insight into the passivation orientation of molecules on the surface is a challenge for rational molecular design. In this study, aminothiol hydrochlorides with different alkyl chains but identical electron-donating (-SH) and electron-withdrawing (-NH3 +) groups were employed to investigate the interplay between molecular structure, orientation, and interaction on perovskite surface. The 2-Aminoethane-1-thiol hydrochloride with shorter alkyl chains exhibited a preference of parallel orientations, which facilitating stronger interactions with the surface defects through strong coordination and hydrogen bonding. The resultant perovskite films following defect passivation demonstrate reduced ion migration, inhibition of nonradiative recombination, and more n-type characteristics for efficient electron transfer. Consequently, an impressive power conversion efficiency of 25 % was achieved, maintaining 95 % of its initial efficiency after 500 hours of continuous maximum power point tracking.

Multi‐Selenophene Strategy Enables Dimeric Acceptors‐Based Organic Solar Cells with over 18.5% Efficiency

AbstractDimeric acceptor (DMA) becomes a promising alternative to small‐molecular and polymeric acceptor‐based organic solar cells (OSCs) due to its well‐defined chemical structure, high batch‐to‐batch reproducibility, and low molecular diffusion properties. However, DMAs usually exhibit blueshifted absorptions, limiting their photon utilization abilities. Herein, multi‐selenophene strategies are adopted to develop redshifted DMAs. From monomer (YSe) to dimers (DYSe‐1 and DYSe‐2), reduced electron reorganization energies and exciton binding energies enable the efficient charge dynamics in the DMAs‐based OSCs. Together with their effective absorption extending to ≈920 nm, DYSe‐1‐ and DYSe‐2‐ based OSCs exhibit outstanding short‐circuit current densities (JSCs) over 27 mA cm−2, which are the best among DMAs. Besides, compared with the YSe‐based device, both DMA‐based devices have higher electroluminescence quantum efficiencies and thus reduce nonradiative recombination loss (ΔE3), contributing to their reduced energy losses. The resultant open‐circuit voltages (VOCs) of DYSe‐1‐ and DYSe‐2‐ based OSCs are ≈0.88 V, which, combining their super JSC values, lead to the promising power conversion efficiencies of 18.56% and 18.22%, respectively. These results are among the best in DMAs‐based OSCs and highlight the great potential of the multi‐selenophene strategy for the development of redshifted DMAs with high performance.

Enhanced Efficiency and Stability of Inverted Perovskite Solar Cells via Primary Amine Molecular Reaction.

The inverted perovskite solar cells have drawn considerable attention owing to their low cost, good compatibility, and easy production processes. However, the device performance is still limited by some important factors, such as surface imperfections and interfacial nonradiative recombination losses. Here, N-acetylethylenediamine (N-AE) is introduced to bind to the surface of the perovskite film via an ammonia condensation reaction. This process creates a stable interfacial layer with n-type doping to enhance the open-circuit voltage (VOC). Moreover, during post-treatment, N-AE dissolves a portion of the perovskite on the surface, leading to perovskite recrystallization. This process enhances the surface quality of the perovskite film and reduces nonradiative recombination. As a result, the inverted perovskite solar cell exhibits a power conversion efficiency approaching 20%, with a rise in VOC from 0.96 to 1.05 V. More impressively, the unencapsulated devices display excellent stability at 85 °C annealing and retained 88% of the initial PCE for 816 h.

Alkyl Chains Tune Molecular Orientations to Enable Dual Passivation in Inverted Perovskite Solar Cells

Nonradiative recombination losses occurring at the interface pose a significant obstacle to achieve high‐efficiency perovskite solar cells (PSCs), particularly in inverted PSCs. Passivating surface defects using molecules with different functional groups represents one of the key strategies for enhancing PSCs efficiency. However, a lack of insight into the passivation orientation of molecules on the surface is a challenge for rational molecular design. In this study, aminothiol hydrochlorides with different alkyl chains but identical electron‐donating (‐SH) and electron‐withdrawing (‐NH3+) groups were employed to investigate the interplay between molecular structure, orientation, and interaction on perovskite surface. The 2‐Aminoethane‐1‐thiol hydrochloride with shorter alkyl chains exhibited a preference of parallel orientations, which facilitating stronger interactions with the surface defects through strong coordination and hydrogen bonding. The resultant perovskite films following defect passivation demonstrate reduced ion migration, inhibition of nonradiative recombination, and more n‐type characteristics for efficient electron transfer. Consequently, an impressive power conversion efficiency of 25% was achieved, maintaining 95% of its initial efficiency after 500 hours of continuous maximum power point tracking.

Modulation on electrostatic potential to build a firm bridge at NiOx/perovskite interface for efficient and stable perovskite solar cells

The NiOx/perovskite interface in NiOx-based inverted perovskite solar cells (PSCs) is one of the main issues that restrict device performance and long-term stability, as the unwanted interfacial defects and undesirable redox reactions cause severe interfacial non-radiative recombination and open-circuit voltage (Voc) loss. Herein, a series of self-assembled molecules (SAMs) are employed to bind, bridge, and stabilize the NiOx/perovskite interface by regulating the electrostatic potential. Based on systematically theoretical and experimental studies, 4-pyrazolecarboxylic acid (4-PCA) is proven as an efficient molecule to simultaneously passivate the NiOx and perovskite surface traps, release the interfacial tensile stress as well as quench the detrimental interface redox reactions, thus effectively suppressing the interfacial non-radiative recombination and enhancing the quality of perovskite crystals. Consequently, the PSCs with 4-PCA treatment exhibited an eminently increased Voc, leading to a significant increase in power conversion efficiency from 21.28% to 23.77%. Furthermore, the unencapsulated devices maintain 92.6% and 81.3% of their initial PCEs after storing in air with a relative humidity of 20%–30% for 1000 h and heating at 65 °C for 500 h in a N2-filled glovebox, respectively.

Optimization of the performance of CsPbI2Br perovskite solar cells in air by adding polyethylene-graft-maleic anhydride and its mechanism

In this study, by adding Polyethylene-graft-maleic anhydride (PGMA) to the inorganic CsPbI2Br perovskite film, the coordination bonds and hydrogen bonds between PGMA and CsPbI2Br cooperate to passivate defects, regulate energy level and stabilize the perovskite structure and eventually improve the device performance. We systematically study the effects of PGMA addition on the morphology, structure, light absorption, defect concentration and carrier lifetime, hydrophobicity, and optical stability and room temperature black phase stability of CsPbI2Br films, and the photoelectric performance and air stability of PSCs, as well as their mechanism. The experimental results show that the addition of 3 wt% of PGMA greatly improves the photoelectric conversion efficiency (PCE) of CsPbI2Br PSCs by 40.19 % because of the synergistic passivation effects and energy level tuning. The hydrogen bonds between –CH2 in PGMA and I−/Br− in CsPbI2Br, along with the coordination of carbonyl groups with Cs+/Pb2+, improve carrier transport and collection by inactivating flaw and managing the level, reducing the non-radiative recombination losses. In addition, the PSCs with 3 wt% of PGMA maintain 80 % of their initial efficiency even after 600 h in high humidity air environment due to the synergistic effect of coordination bonds and hydrogen bonds. Our study provides valuable insights into the use of PGMA to improve the performance of all-inorganic CsPbI2Br PSCs and the practicality of perovskite solar cells.

Interfacial Heterojunction Enables High Efficient PbS Quantum Dot Solar Cells.

Colloidal quantum dots (CQDs) are promising optoelectronic materials for solution-processed thin film optoelectronic devices. However, the large surface area with abundant surface defects of CQDs and trap-assisted non-radiative recombination losses at the interface between CQDs and charge-transport layer limit their optoelectronic performance. To address this issue, an interface heterojunction strategy is proposed to protect the CQDs interface by incorporating a thin layer of polyethyleneimine (PEIE) to suppress trap-assisted non-radiative recombination losses. This thin layer not only acts as a protective barrier but also modulates carrier recombination and extraction dynamics by forming heterojunctions at the buried interface between CQDs and charge-transport layer, thereby enhancing the interface charge extraction efficiency. This enhancement is demonstrated by the shortened lifetime of carrier extraction from 0.72 to 0.46ps. As a result, the resultant PbS CQD solar cells achieve a power-conversion-efficiency (PCE) of 13.4% compared to 12.2% without the heterojunction.

Buried interface modification and light outcoupling strategy for efficient blue perovskite light-emitting diodes

Perovskite light-emitting diodes (PeLEDs) exhibit remarkable potential in the field of displays and solid-state lighting. However, blue PeLEDs, a key element for practical applications, still lag behind their green and red counterparts, due to a combination of strong nonradiative recombination losses and unoptimized device structures. In this report, we propose a buried interface modification strategy to address these challenges by focusing on the bottom-hole transport layer (HTL) of the PeLEDs. On the one hand, a multifunctional molecule, aminoacetic acid hydrochloride (AACl), is introduced to modify the HTL/perovskite interface to regulate the perovskite crystallization. Experimental investigations and theoretical calculations demonstrate that AACl can effectively reduce the nonradiative recombination losses in bulk perovskites by suppressing the growth of low-n perovskite phases and also the losses at the bottom interface by passivating interfacial defects. On the other hand, a self-assembly nanomesh structure is ingeniously developed within the HTLs. This nanomesh structure is meticulously crafted through the blending of poly-(9,9-dioctyl-fluorene-co-N-(4-butyl phenyl) diphenylamine) and poly (n-vinyl carbazole), significantly enhancing the light outcoupling efficiency in PeLEDs. As a result, our blue PeLEDs achieve remarkable external quantum efficiencies, 20.4% at 487 nm and 12.5% at 470 nm, which are among the highest reported values. Our results offer valuable insights and effective methods for achieving high-performance blue PeLEDs.

Highly Efficient and Scalable p-i-n Perovskite Solar Cells Enabled by Poly-metallocene Interfaces.

Inverted p-i-n perovskite solar cells (PSCs) are easy to process but need improved interface characteristics with reduced energy loss to prevent efficiency drops when increasing the active photovoltaic area. Here, we report a series of poly ferrocenyl molecules that can modulate the perovskite surface enabling the construction of small- and large-area PSCs. We found that the perovskite-ferrocenyl interaction forms a hybrid complex with enhanced surface coordination strength and activated electronic states, leading to lower interfacial nonradiative recombination and charge transport resistance losses. The resulting PSCs achieve an enhanced efficiency of up to 26.08% for small-area devices and 24.51% for large-area devices (1.0208 cm2). Moreover, the large-area PSCs maintain >92% of the initial efficiency after 2000 h of continuous operation at the maximum power point under 1-sun illumination and 65 °C.

Dual Defect Passivation at the Buried Interface for Printable Mesoscopic Perovskite Solar Cells with Reduced Open-Circuit Voltage Loss.

Numerous defects exist at the buried interface between the perovskite and adjacent electron transport layers in perovskite solar cells, resulting in severe non-radiative recombination and excessive open-circuit voltage (VOC) loss. Herein, a dual defect passivation strategy utilizing guanidine sulfate (GUA2SO4) as an interface modifier is first reported. On the one hand, the SO4 2- preferentially interacts with Pb-related defects, generating water-insoluble lead oxysalts complexes. Additionally, GUA+ diffuses into the perovskite and induces the formation of low-dimensional perovskite. These reactions effectively suppress trap states at the buried interface and perovskite boundaries in printable mesoscopic perovskite solar cells (p-MPSCs), thus increasing the carrier lifetime. Meanwhile, GUA2SO4 optimizes the interface energy band alignment, thus accelerating the charge extraction and transfer at the buried interface. This synergistic effect of trap passivation and interface energy band alignment modulation is strongly demonstrated by an increase in average VOC of 70mV and the power conversion efficiency improvement from 17.51% to 18.70%. This work provides a novel approach to efficiently improve the performance of p-MPSCs through dual-targeted defect passivation at the buried interface.

Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells

Charge-Transfer States at the Fullerene Interface Cause Nonradiative Recombination Losses in Sn-Based Perovskite Solar Cells

Custom-tailored hole transport layer using oxalic acid for high-quality tin-lead perovskites and efficient all-perovskite tandems.

All-perovskite tandem solar cells (TSCs) have exhibited higher efficiencies than single-junction perovskite solar cells (PSCs) but still suffer from the unsatisfactory performance of low-bandgap (LBG) tin-lead (Sn-Pb) subcells. The inherent properties of PEDOT:PSS are crucial to high-performance Sn-Pb perovskite films and devices; however, the underlying mechanism has not been fully explored and revealed. Here, we report a facile oxalic acid treatment of PEDOT:PSS (OA-PEDOT:PSS) to precisely regulate its work function and surface morphology. OA-PEDOT:PSS shows a larger work function and an ordered reorientation and fiber-shaped film morphology with efficient hole transport pathways, leading to the formation of more ideal hole-selective contact with Sn-Pb perovskite for suppressing interfacial nonradiative recombination losses. Moreover, OA-PEDOT:PSS induces (100) preferred orientation growth of perovskite for higher-quality Sn-Pb films. Last, the OA-PEDOT:PSS-tailored LBG PSC yields an impressive efficiency of up to 22.56% (certified 21.88%), enabling 27.81% efficient all-perovskite TSC with enhanced operational stability.

Regulating the perovskite/C60 interface via a bifunctional interlayer for efficient inverted perovskite solar cells

Inverted perovskite solar cells are promising candidates in photovoltaic fields due to their low-temperature processing, simplified fabrication, and enhanced stability when compared with the conventional configuration. However, the significant non-radiative recombination losses and energy alignment mismatch at the perovskite/C60 interface limit the device's performance and long-term stability. To overcome this drawback, we introduced trifluoromethoxy-functionalized phenethylammonium iodide salts with high polarity between the perovskite and C60 electron transporting layer. This bifunctional interlayer not only effectively passivates the perovskite surface and interface but also reduces the minority carriers through the band rearrangement at this interface, thus significantly suppressing the deteriorating interfacial non-radiative recombination. The modified interlayer also facilitates electron extraction by reducing the offset between the perovskite and C60, contributing to an improved photocurrent and fill factor. The resultant inverted perovskite solar cell based on a Cs0.05FA0.85MA0.10Pb(I0.95Br0.05)3 composition reveals a power conversion efficiency of 24.7 % at the reverse scan and shows negligible efficiency loss after 600 h of maximum power point tracking under one-sun illumination. Overall, this feasible deposition of ammonium-based interlayer establishes a successful demonstration of efficient and stable inverted devices to accelerate the commercialization of perovskite photovoltaics.