Nonequilibrium Green Function Method Research Articles

Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism

We present a Python-based open-source library named Jiezi, which provides the means of simulating the electronic transport properties of nanoscaled devices on the atomistic level. The key feature of Jiezi lies in its core algorithm, i.e., self-consistent orchestration between the non-equilibrium Green's function (NEGF) method and a Poisson's equation solver. Beyond the construction of the tight-binding (TB) Hamiltonian with empirical parameters for conventional materials, the package offers a comprehensive framework for constructing the Wannier-based Hamiltonian matrix, enabling the investigation of novel materials and their heterostructures. To expedite the solution of NEGF systems, a methodology based on renormalization theory is proposed for reducing the dimension of the Hamiltonian matrix. Additionally, we adopt a non-linear Poisson equation solver with no analytical approximation in this software. The software facilitates seamless integration with external tools for geometry and mesh generation and post-processing. In this paper, we present the main capabilities and workflow by demonstrating with a simulation for the carbon nanotube field-effect transistor (CNTFET). Program summaryProgram Title: JieziCPC Library link to program files:https://doi.org/10.17632/nk79kbtww4.1Developer's repository link:https://github.com/Jiezi-negf/JieziLicensing provisions: GPLv3Programming language: PythonNature of problem: Simulates the quantum transport property of nano-scaled transistors based on the predefined device structure and the material composition.Solution method: Solves the coupled Schrödinger equation and Poisson equation by NEGF and finite element method.

Numerical investigation on the convergence of self-consistent Schrödinger-Poisson equations in semiconductor device transport simulation

Semiconductor devices at the nanoscale with low-dimensional materials as channels exhibit quantum transport characteristics, thereby their electrical simulation relies on the self-consistent solution of the Schrödinger-Poisson equations. While the non-equilibrium Green’s function (NEGF) method is widely used for solving this quantum many-body problem, its high computational cost and convergence challenges with the Poisson equation significantly limit its applicability. In this study, we investigate the stability of the NEGF method coupled with various forms of the Poisson equation, encompassing linear, analytical nonlinear, and numerical nonlinear forms Our focus lies on simulating carbon nanotube field-effect transistors (CNTFETs) under two distinct doping scenarios: electrostatic doping and ion implantation doping. The numerical experiments reveal that nonlinear formulas outperform linear counterpart. The numerical one demonstrates superior stability, particularly evident under high bias and ion implantation doping conditions. Additionally, we investigate different approaches for presolving potential, leveraging solutions from the Laplace equation and a piecewise guessing method tailored to each doping mode. These methods effectively reduce the number of iterations required for convergence.

Transition Metal (Co, V, W, Zr) Single-Atom Decorated Biphenylene for Enhancing the Sensing Performance of SF6 Decomposition Molecules.

The highly sensitive gas sensors used to monitor the decomposition of toxic gases in the dielectric materials of electrical equipment are vital in preventing safety problems arising from corrosion of the equipment. Recently, biphenylene (BPN) has been prepared through surface interpolymer hydrofluorination (HF zipper) reaction, whereas potential gas-sensitive devices based on the BPN monolayer have lacked in-depth investigation. The stable geometries, adsorption energies, interlayer distances, and charge transfers of small molecules of toxic gases (H2S, SO2, SOF2, SO2F2) produced by SF6 chalcogenide molecules of decomposition adsorbed on the original BPN monolayer are systematically researched by using nonequilibrium Green's function methods and density functional theory. The results indicated that all small molecules adsorbed on the BPN monolayer are physisorbed, while the type of adsorption turned from physisorption to chemisorption when BPN carried out adsorption with adsorbing a transition metal atom (TMA). In addition, the characteristics of current-voltage (I-V) curves of H2S and SO2 based on the TMA-BPN gas sensors revealed that the currents in BPN-based gas sensors displayed an obvious anisotropy, and the currents in the zigzag direction are larger than that in the armchair orientation regardless of the molecular adsorption cases. Moreover, the difference of currents for TMA-decorated BPN sensors changed more remarkably before and after the adsorption of H2S and SO2 in the zigzag direction. This work offers insights into the design of gas-sensitive devices through the adsorption of small molecules on the TMA-decorated BPN monolayer.

Biaxila strain modulated high anisotropic gas-sensing performance of C5N-based two-dimensional devices: A first-principles study

Two-dimensional carbon nitride materials have been widely used in many applications such as device fabrication, gas adsorption and separation due to their abundant element resources, high physicochemical stability and excellent electronic properties. In this paper, density functional theory and non-equilibrium Green's function method are used to study the electronic structure, transport characteristics and gas sensitivity of C5N-based structures. The results show that the electron transport exhibits obvious anisotropy, in which the electron transport in the armchair direction is more conductive than that in the zigzag direction. It is worth noting that the negative differential resistance effect exists in both directions. Furthermore, the transport and sensing characteristics of inorganic molecules (NO, CO, NO2, SO2, and NH3) adsorbed on the C5N monolayer are studied. The results show that CO, SO2 and NH3 exist on the surface of C5N in the form of physical adsorption, while NO and NO2 adhere to the surface of C5N in the form of chemical adsorption. The designed C5N gas sensor exhibits high sensitivity to NO and NO2 molecules, reaching 81 % sensitivity to NO2 at a 0.1 V bias voltage. Finally, the effect of strain on the adsorption properties of gas sensing devices is studied. Studies have shown that the application of -4 % strain in the armchair direction significantly increases the current of NO and NO2, significantly improving the performance of the gas sensor. Whether strain is applied to the device or gas adsorption, C5N materials always maintain significant anisotropy. This study shows that C5N is a highly anisotropic and sensitive two-dimensional material, which has broad application potential in the field of electronic properties and gas sensing.

Topological Phonons and Thermoelectric Conversion in Crystalline Materials

AbstractTopological phononics, a fascinating frontier in condensed matter physics, holds great promise for advancing energy‐related applications. Topologically nontrivial phonons typically possess gapless edge or surface states. These exotic states of lattice vibrations, characterized by their nontrivial topology, offer unique opportunities for manipulating and harnessing energy transport. The exploration of topological phonons opens new avenues in understanding and controlling thermal transport properties, with potential applications in fields such as thermoelectric materials, phononic devices, and waste heat recovery. Here, an overview of concepts such as Berry curvature and topological invariants, along with the applications of phonon tight‐binding method and nonequilibrium Green's function method in the field of topological phononics is provided. This review encompasses the latest research progress of various topological phonon states within crystalline materials, including topological optical phonons, topological acoustical phonons, and higher‐order topological phonons. Furthermore, the study delves into the prospective applications of topological phonons in the realm of thermoelectric conversion, focusing on aspects like size effects and symmetry engineering.

The spin transport properties of Ni(111)/SnSe/Ni(111) lateral tunnel junction

Spin-resolved transport properties of the armchair-edged SnSe lateral contact with two magnetic Ni(111) leads are investigated by density functional theory combined with nonequilibrium Green's function method. The spin-polarized currents, magnetoresistances and k-resolved transmission spectrums are simulated in spin parallel and antiparallel configurations. It is found that the heterostructure exhibits a stable spin injection efficiency which can reach up to 80% at low bias range in spin parallel configuration, suggesting the large spin-diffusion length of SnSe. The magnetoresistance can be maintained stably at about 40% at a wide bias range. These results make SnSe material possible to be used in spintronic devices.

Combined resonant tunneling and rate equation modeling of terahertz quantum cascade lasers

Terahertz (THz) quantum cascade lasers (QCLs) are technologically important laser sources for the THz range but are complex to model. An efficient extended rate equation model is developed here by incorporating the resonant tunneling mechanism from the density matrix formalism, which permits to simulate THz QCLs with thick carrier injection barriers within the semi-classical formalism. A self-consistent solution is obtained by iteratively solving the Schrödinger–Poisson equation with this transport model. Carrier–light coupling is also included to simulate the current behavior arising from stimulated emission. As a quasi-ab initio model, intermediate parameters, such as pure dephasing time and optical linewidth, are dynamically calculated in the convergence process, and the only fitting parameters are the interface roughness correlation length and height. Good agreement has been achieved by comparing the simulation results of various designs with experiments, and other models such as density matrix Monte Carlo and non-equilibrium Green's function method that, unlike here, require important computational resources. The accuracy, compatibility, and computational efficiency of our model enable many application scenarios, such as design optimization and quantitative insights into THz QCLs. Finally, the source code of the model is also provided in the supplementary material of this article for readers to repeat the results presented here, investigate, and optimize new designs.

Radical and quantum interference-enhanced thermoelectric performance of the junctions based on porphyrin dimer molecules

Manipulating the π-electron magnetism of single-molecule junctions is an effective means to improve the electronic and spin-polarized thermoelectric transport properties. Here, using the density functional theory combined with the nonequilibrium Green's function method, we demonstrate that the electronic conductance (σ) of molecular junctions (MJs) can be significantly enhanced by organic radicals due to the shifting of resonant states. Moreover, we find that the spin-dependent quantum interference (SDQI) effects can be largely influenced by organic radicals. The SDQI effects result in nearly 100% spin filtering efficiency in open-shell molecules and greatly enhance the Seebeck coefficients. As a result, the thermoelectric performances of open-shell MJs at room temperature are greatly improved through the combined effects of radicals and SDQI. In particular, the maximum ZTsp in the four radical junctions reaches up to 36.5. Our results show great potential for improving thermoelectric performance through the utilization of quantum interference and organic radical.

Influence of varying carbon oxides concentrations on the selectivity of an electrical sensor utilizing graphene nanoribbons

We have considered a graphene nano ribbon-based two probe-device working on the principle of alteration of current-voltage (I–V) characteristic, upon interactions of its channel material with the adsorbed gas molecules. The analysis of sensing parameters alongside the electron transport mechanism was carried out by using density functional theory (DFT) formulated on the Hohenberg-Kohen paradigm in conjunction with the non-equilibrium green functions (NEGF) method. Electronic transport through similar work reported earlier reveals that the combination of these two techniques coordinates extremely well and yields convincing electronic results. The nanoribbon-based sensing device was employed to evaluate its capability to detect Carbon dioxide (CO2) and Carbon monoxide (CO) molecules. Analysis of the computed result reveals significant modifications in the electronic property of the device upon adsorption of carbon dioxide and carbon monoxide entities on the channel surface. One such significant and dramatic change in the characteristic that we observed is the nature of the channel that transforms from metallic to semi-metallic. Another observed change is the signal amplification capability relative to the pristine device. The signal gets amplified on increasing number of molecular entities from one to six.The transformation in sensor performance is additionally supported by examining variations in multiple parameters, including adsorption energy, charge transfer, differential resistance, and the figure of merit, also known as the peak-to-valley ratio (PVR). The investigation unveiled that the currently designed zigzag graphene nanoribbon (ZGNR) model exhibits high sensitivity to both CO2 and CO gases. This phenomenon is substantiated by the elevated adsorption energy, increased charge transfer, elevated peak-to-valley ratio (PVR), and heightened sensor response. The substantial sensor response, registering at a magnitude of 8.3, underscores the efficacy of the current system in detecting both low and high concentrations of CO and CO2 molecules. The current study emphasizes the notion that understanding the electronic and transport behaviour of zigzag graphene nanoribbons (ZGNR) and analogous materials could offer valuable insights for addressing the threat of environmental pollution.

Temperature-dependent electronic, optical, and solar cell device properties of AlAs and AlSb semiconductors and their p-n homojunctions

AlSb and AlAs have attracted renewed interest in recent years as promising photovoltaic (PV) materials due to significant light absorption, eco-friendliness, and low cost. Here, density functional theory (DFT) in combination with the non-equilibrium Green's function method (NEGF) has been used to compute the temperature-dependent PV parameters of nanoscale AlSb and AlAs p-n junction solar cell devices. In particular, the influence of electron-phonon coupling (EPC) and spin-orbit coupling (SOC) on the PV properties of these devices is investigated. Our results highlight the importance of inclusion of EPC in evaluating the ab initio PV properties of p-n junctions at finite temperatures. At non-zero temperatures, the PV parameters can differ significantly compared to those at zero temperature due to phonon-assisted tunnelling of charge carriers across the p-n junction. In particular, the mobility of low-effective-mass carriers at the p-n junction is found to be enhanced by phonon scattering, which in turn results in improved PV transport properties. The short-circuit current (Jsc) at 300 K proved to be 21.7% (16.2%) higher for AlSb (AlAs) than that at 0 K. On the other hand, the open-circuit voltage (Voc) at 300 K proved to be 19.1% (16.7%) lower for AlSb (AlAs) than that at 0 K. Jsc is higher in AlSb than in AlAs due to higher phonon-influenced mobility of low-effective-mass carriers. Overall, our study strongly suggests the importance of inclusion of EPC and hence phonon scattering in the first-principles quantitative determination of PV parameters of solar cells. The estimates obtained in this study may be utilized as input ab initio parameters in continuum-model-based multi-scale simulations of AlSb and AlAs p-n homo-junction solar cells.

Influence of temperature on bandgap shifts, optical properties and photovoltaic parameters of GaAs/AlAs and GaAs/AlSb p–n heterojunctions: insights from ab-initio DFT + NEGF studies

The III–V group semiconductors are highly promising absorbers for heterojunctions based solar cell devices due to their high conversion efficiency. In this work, we explore the solar cell properties and the role of electron–phonon coupling (EPC) on the solar cell parameters of GaAs/AlSb and GaAs/AlAs p–n heterojunctions using non-equilibrium Green function method (NEGF) in combination of ab-initio density functional theory (DFT). In addition, the band offsets at the heterointerfaces, optical absorption and bandgap shifts (BGSs) due to temperature are estimated using DFT + NEGF approach. The interface band gaps in heterostructures are found to be lower than bulk band gaps leading to a shift in optical absorption coefficient towards lower energy side that results in stronger photocurrent. The temperature dependent electronic BGS is significantly influenced by the phonon density and phonon energy via EPC. The phonon influenced BGS is found to change the optical absorption, photocurrent density and open-circuit voltage. In case of GaAs/AlSb junction, the interface phonons are found to have significantly higher energies as compared to the bulk phonons and thereby may have important implications for photovoltaic (PV) properties. Overall, the present study reveals the influence of EPC on the optical absorption and PV properties of GaAs/AlSb and GaAs/AlSb p–n heterojunctions. Furthermore, the study shows that the DFT + NEGF method can be successfully used to obtain the reasonable quantitative estimates of temperature dependent BGSs, optical absorption and PV properties of p–n heterojunctions.

Proposal for All-Electrical Skyrmion Detection in van der Waals Tunnel Junctions.

A major challenge for magnetic skyrmions in atomically thin van der Waals (vdW) materials is reliable skyrmion detection. Here, based on rigorous first-principles calculations, we show that all-electrical skyrmion detection is feasible in two-dimensional vdW magnets via scanning tunneling microscopy (STM) and in planar tunnel junctions. We use the nonequilibrium Green's function method for quantum transport in planar junctions, including self-energy due to electrodes and working conditions, going beyond the standard Tersoff-Hamann approximation. We obtain a very large tunneling anisotropic magnetoresistance (TAMR) around the Fermi energy for a graphite/Fe3GeTe2/germanene/graphite vdW tunnel junction. For atomic-scale skyrmions, the noncollinear magnetoresistance (NCMR) reaches giant values. We trace the origin of the NCMR to spin mixing between spin-up and -down states of pz and dz2 character at the surface atoms. Both TAMR and NCMR are drastically enhanced in tunnel junctions with respect to STM geometry due to orbital symmetry matching at the interface.

Armchair zinc chalcogenide nanoribbons for high-performance photodetectors: A computational study

In this study, we employ density functional theory and non-equilibrium Green's function methods to investigate the electronic and photoelectric response properties of one-dimensional hexagonal ZnX (X = S, Se) nanoribbons (NRs). Remarkably, armchair (ARM) NRs demonstrate superior photoelectric response in the visible and near-ultraviolet regions. It is worth noting that for all considered photon energies, the photocurrent exhibits a cosine dependence on the polarization angle, which is consistent with the photogalvanic effect. when the width of NR is eight atoms, the zinc blende ZnSe/ARM NR-based device achieves a maximum extinction ratio of 63.9 at the photon energy of 3.0 eV. The significant photocurrent and high polarization sensitivity suggest the potential of ZnX NRs for applications in optoelectronic devices, particularly in visible and near-ultraviolet light detection.

Enhanced tunneling electroresistance through polarization-controlled band alignments in α-In2Se3-based ferroelectric tunnel junctions

The manipulation of tunneling resistance is of paramount importance in the realm of ferroelectric tunnel junction (FTJ) devices. In this work, we propose a novel mechanism that enables the manipulation of tunneling resistance through polarization-controlled band alignments in α-In2Se3-based FTJs. This mechanism exploits the transition between metallic and insulating states, induced by polarization-controlled band alignments, thus resulting in the emergence of a significant tunneling electroresistance (TER) effect. To investigate this intriguing possibility, we have designed two-dimensional (2D) FTJs based on a PtTe2/α-In2Se3 van der Waals heterostructures. By employing first-principles calculations, we demonstrate that the manipulation of band alignments between insulating and metallic states can be achieved via ferroelectric polarization. Leveraging nonequilibrium Green's function methods, we have successfully achieved a remarkably large TER effect with a ratio reaching up to 2.40 × 104. This work unveils substantial potential for the development of nano-field high-density memories and ferroelectric field-effect transistors utilizing 2D layered ferroelectric/semiconductor heterostructures.

Ultra-thin van der Waals magnetic tunnel junction based on monoatomic boron vacancy of hexagonal boron nitride.

We present a novel strategy to create a van der Waals-based magnetic tunnel junction (MTJ) comprising a three-atom layer of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) layers by introducing a monoatomic boron vacancy in each hBN layer. The magnetic properties and electronic structure of the system were investigated using density functional theory (DFT) and the transmission probability of the MTJ was investigated using the Landauer-Büttiker formalism within the non-equilibrium Green function method. The Stoner gap was created between the spin-majority channel and the spin-minority channel on the local density of states of the hBN monoatomic boron-vacancy (VB) near the Fermi energy, creating a possible control of the spin valve by considering two magnetic alignment of hBN(VB) layers, anti-parallel configuration (APC) and parallel configuration (PC). The transmission probability calculation results showed a high electron transmission in the PC of the hBN(VB) layers and a low transmission when the APC was considered. A high tunneling magnetoresistance (TMR) ratio of approximately 400% was observed when comparing the APC and PC of the hBN(VB) layers in hBN(VB)/Gr/hBN(VB), giving the highest TMR ratio for the thinnest MTJ system.

Designing van der Waals magnetic tunnel junctions with high tunnel magnetoresistance via Brillouin zone filtering.

Magnetic tunnel junctions (MTJs) consisting of two-dimensional (2D) van der Waals heterostructures have no inter-layer chemical bonds; therefore, their spin tunneling is determined solely by the Brillouin zone (BZ) filtering effect. To obtain high tunnel magnetoresistance (TMR), they should possess transversal momentum-resolved conduction channels for the electrodes and transmission channels for the barriers. Here, we investigate 2D magnets as electrodes whose Curie temperatures approach room temperature and also hexagonal 2D insulators as the barrier. Iron-based compounds such as FexGeTe2 (x = 3 and 4) are calculated to have high transmission coefficients over the entire in-plane BZ for the majority spin channel, while this should only happen around Γ for the minority spin channel. Correspondingly, various 2H-type transition metal dichalcogenides (TMDs) are found to function effectively as spin barriers, where electrons are only allowed to tunnel through them around the K and M points. BZ spin filtering is confirmed to be the major mechanism of the TMR effect by the MTJ transport calculation using the non-equilibrium Green function method. Furthermore, the TMR is calculated to be nearly independent of the barrier layer thickness as the BZ filtering is an interfacial effect. This work sheds light on material selection procedures and designing ultra-thin and robust van der Waals MTJs.

Decoupling of Majorana bound states in T-shaped double-quantum-dot structure with ferromagnetic leads

The significant potential applications of Majorana bound state (MBS) in topological quantum computing manifest the importance and necessity of relevant in-depth research. To understand the physical properties of MBS, the most practical approach is to integrate it to a mesoscopic circuit and then investigate its quantum transport behaviors. In this work, we investigate the transport properties in the systems with MBS, and provide theoretical support for its further understanding and detection, by utilizing the nonequilibrium Green’s function method and scattering matrix theory. Specifically, we investigate theoretically the transport properties in a T-shaped double-quantum dot structure, by considering MBS to be coupled to the dot in the main channel, which shows that in the linear transmission region, when the level of side-coupled dot is tuned to the Fermi energy level, the contribution of MBS to the conductance is eliminated under weak and strong Coulomb interaction. The side-coupled dot is far away from the Fermi energy level, leading to different results. When Majorana zero mode is added, the linear conductance is independent of the level of the side-coupled quantum dot, and the conductance plateau appears. However, with coupling between the MBSs, the linear conductance is the same as that without coupling between the MBSs. The decoupling phenomenon of the MBS remains strong. Therefore, the signature of the MBS can be eliminated by adjusting the level of the side-coupled quantum dot or the inter-MBS coupling. When ferromagnetic leads are introduced, the appearance or disappearance of the conductance plateau is clearly dependent on the difference between the magnetic field direction and the lead polarization direction in the system, whereas the decoupling behavior of the MBS is still existent. This work contributes to further explaining the decoupling phenomenon of MBSs in a T-shaped double-quantum-dot system, and presents a theoretical approach to more in-depth understanding and detection of the MBS.

Boron-doped graphene topological defects: unveiling high sensitivity to NO molecule for gas sensing applications.

Global air quality has deteriorated significantly in recent years due to large emissions from the transformation industry and combustion vehicles. This issue requires the development of portable, highly sensitive, and selective gas sensors. Nanostructured materials, including defective graphene, have emerged as promising candidates for such applications. In this work, we investigated the B-doped topological line defect in graphene as a sensing material for various gas molecules (CO, CO2, NO, and NH3) based on a combination of density functional theory and the non-equilibrium Green's function method. The electronic transport calculations reveal that the electric current can be confined to the line defect region by gate voltage control, revealing highly reactive sites. The B-doped topological line defect is metallic, favoring the adsorption of NO and NH3 over CO and CO2 molecules. We notice changes in the conductance after gas molecule adsorption, producing a sensitivity of 50% (16%) for NO (NH3). In addition, the recovery time for nitride gases was calculated for different temperatures and radiation frequencies. At 300 K the ultraviolet (UV) has a fast recovery time compared to the visible (VIS) one by about two orders of magnitude. This study gives an understanding of how engineering transport properties at the microscopic level (by topological line defect and chemical B-doping) leads to promising nanosensors for detecting nitride gas.

First-principles studies on the electronic and contact properties of monolayer Ga2STe-metal contacts.

Monolayer (ML) Janus III-VI compounds have attracted the use of multiple competitive platforms for future-generation functional electronics, including non-volatile memories, field effect transistors, and sensors. In this work, the electronic and interfacial properties of ML Ga2STe-metal (Au, Ag, Cu, and Al) contacts are systematically investigated using first-principles calculations combined with the non-equilibrium Green's function method. The ML Ga2STe-Au/Ag/Al contacts exhibit weak electronic orbital hybridization at the interface, while the ML Ga2STe-Cu contact exhibits strong electronic orbital hybridization. The Te surface is more conducive to electron injection than the S surface in ML Ga2STe-metal contact. Quantum transport calculations revealed that when the Te side of the ML Ga2STe is in contact with Au, Ag and Cu electrodes, p-type Schottky contacts are formed. When in contact with the Al electrode, an n-type Schottky contact is formed with an electron SBH of 0.079 eV. When the S side of ML Ga2STe is in contact with Au and Al electrodes, p-type Schottky contacts are formed, and when it is in contact with Ag and Cu electrodes, n-type Schottky contacts are formed. Our study will guide the selection of appropriate metal electrodes for constructing ML Ga2STe devices.

Tunable multiple nonvolatile resistance states in a MnSe-based van der Waals multiferroic tunnel junction.

Two-dimensional (2D) van der Waals (vdW) multiferroic tunnel junctions (MFTJs) composed of a ferromagnetic metal and a ferroelectric barrier have controllable thickness and clean interface and can realize the coexistence of tunneling magnetoresistance (TMR) and tunneling electroresistance (TER). Therefore, they have enormous potential application in nonvolatile multistate memories. Here, using first principles combined with non-equilibrium Green's function method, we have systematically investigated the spin-dependent transport properties of Fe3GeTe2/MnSe/Fe3GeTe2 vdW MFTJs with various numbers of barrier layers. By controlling the polarization orientation of the ferroelectric barrier MnSe and the magnetization alignment of the ferromagnetic electrodes Fe3GeTe2, the MnSe-based MFTJs exhibit four nonvolatile resistance states, with the TMR (TER) becoming higher and reaching a maximum of 1.4 × 106% (4114%) as the MnSe layers increase from a bilayer to a tetralayer. Using asymmetric Cu and Fe3GeTe2 as the electrodes, the TER can be further improved from 349% to 618%. Moreover, there is a perfect spin filtering effect in these MFTJs. This work demonstrates the potential applications of MnSe-based devices in multistate nonvolatile memories and spin filters, which will stimulate experimental studies on layer-controllable spintronic devices.