Nonequilibrium Charge Research Articles

The Effect оf Laser Radiation оn Functional Properties of MOS Structures

The electrophysical properties of instrument MOSFET structures (capacitor, field-effect transistor with an isolated gate and an induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. Static and dynamic characteristics were measured. The theoretical study was carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristic of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of the structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, the photovoltaic effect in p—n junctions, the photo-Dember effect and tunneling of charge carriers through a gate dielectric. The results of the work are of interest from the point of view of creating high-speed transistors and integrated circuits of a new type.

Simulated Quantum Computation of Non-Equilibrium Charge Transport in a Cyclic Molecule

Simulated Quantum Computation of Non-Equilibrium Charge Transport in a Cyclic Molecule

Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects

Kinetics of degradation of the nonequilibrium charge carrier lifetime (τ) in Czochralski‐grown (Cz) n‐Si irradiated with 1 MeV electrons at different temperatures in the range from 20 to 285 °C are experimentally and theoretically investigated. It is established that changes in τ are qualitatively and quantitatively determined by the temperature of electron irradiation. Analysis of experimental data using the Shockley‐Read‐Hall (SRH) theory shows that the formation of recombinationally active divacancy‐oxygen (V2O) and vacancy‐oxygen (VO) complexes is the main mechanism of τ degradation in this experiment.

Effect of Gamma Irradiation on Electrophysical Parameters of Silicon Solar Cells Doped with Nickel

The results of the studies of changes in the electro-physical parameters (Voc – no-load voltage, Isc – short-circuit current density; τ – lifetime of nonequilibrium charge carriers) of photocells made on plates of monocrystalline silicon of the p-type conductivity with the specific resistance ρ 0.5 Ohm cm, doped with nickel, under irradiation with γ-quanta from 60Co source are presented. It is shown that the efficiency of the solar energy conversion in nickel-doped photovoltaic cells remains higher than in standard cells up to irradiation doses of 108 rad. It was established that with increasing diffusion temperature of nickel atoms radiation stability of electrophysical parameters of photovoltaic cells also increases. A decrease in the concentration of recombination-active radiation defects is due to the getterization by nickel atoms of technological (background) impurities and the action of nickel clusters as effluents for radiation-induced vacancies.

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In HJs, in contrast to Schottky diodes, the capacitance and AC conductance show a prominent frequency and temperature dependence, suggesting the presence of two temperature activation processes with activation energies of 0.17 and 0.1 eV. The deep trap spectra of the Schottky diodes and HJs differ by the absence in the HJ of deep electron traps E2* with level near Ec − 0.7 eV considered to be an important center of non-radiative recombination. This correlates with the observed increase in the diffusion length of non-equilibrium charge carriers in the HJs to 370 nm compared to 240 nm in the Schottky diodes. The diffusion length of charge carriers in p-NiO was found to be quite short, 30 nm. Possible reasons for the observed differences and possible origin of the minority-trap-like feature commonly reported to be present in the deep level spectra of HJs and also observed in our experiments are discussed.

CHANGES IN THE ELECTROPHYSICAL AND DETECTOR PROPERTIES OF THE PROMISING DETECTOR MATERIAL Cd1-xMnxTe DEPENDING ON THE CONCENTRATION OF IMPURITIES, DEFECTS AND MANGANESE CONTENT

A model study was carried out about the behavior of the resistivity ρ, the Fermi level F, and the charge collection efficiency η of detectors based on the promising semiconductor material Cd1-xMnxTe, depending on the donor impurity concentration ND for different values of the manganese molar fraction x: 0.035, 0.07, and 0.3 at room temperature. The values of concentrations Ni , activation energies Ei , and the capture cross sections σi of nonequilibrium charge carriers by i-th defects acted as input data for modeling. The regularities of changes in ρ, F, η depending on the content of impurities and cadmium vacancies have been established. Methods of achieving a highresistance state, proper for a material of detector-quality, are considered. A plan for further research issues using experimental published results is defined.

Photoemission Enhancement of Plasmonic Hot Electrons by Au Antenna-Sensitizer Complexes.

The photoemission of surface plasmon decay-produced hot electrons is usually of very low efficiencies, hindering the practical utilization of such nonequilibrium charge carriers in harvesting photons with less energy than the semiconductor band gap for more efficient solar energy collection and photodetection. However, it has been demonstrated that the photoemission efficiency of small metal clusters increases as the particle size decreases. Recent studies have also shown that the photoemission efficiency of surface plasmon-yielded hot carriers can be intrinsically improved through proper material construction. In this paper, we report that the photoemission efficiency of hot electrons on the Au nanodisk-cluster complex/TiO2 interface can be dramatically enhanced under optical nanoantenna-sensitizer design. Such an enhancement is dominantly attributed to three factors. First, the large plasmonic nanodisk antennas provide a significantly enhanced optical near field, which largely increases light absorption in the small Au clusters that are acting as hot electron injection sensitizers. Second, the sub-3 nm size of the Au clusters facilitates the collection of delocalized spreading charges by the semiconductor. Third, the hybrid interface and molecule-like energy level of the Au cluster result in a much longer lifetime of excited electrons. Our results provide a promising approach for the effective harvesting of solar energy with plasmonic antenna-sensitizer complexes.

Event-by-event kinetic description of pre-equilibrium charge evolution in QCD plasma

We use QCD effective kinetic theory to calculate far-fromequilibrium dynamics on an event-by-event basis within the KøMPøST framework. We present non-equilibrium charge response functions and the dynamical evolution of the conserved charge current pertinent to the early-time dynamics of heavy-ion collisions at the highest energies. The KøMPøST framework with conserved baryon, strangeness, and electric charges can then be readily implemented into a multistage model allowing for the initialization of a nonequilibrium charge current in hydrodynamic simulations.

Entropy-ruled nonequilibrium charge transport in thiazolothiazole-based molecular crystals: a quantum chemical study.

The charge and energy fluctuations in molecular solids are crucial factors for a better understanding of charge transport (CT) in organic semiconductors. The energetic disorder-coupled molecular charge transport is still not well-established. Moreover, the conventional Einstein's diffusion (D)-mobility (μ) relation fails to explain the quantum features of organic semiconductors, including nonequilibrium and degenerate transport systems, where kB is the Boltzmann constant, T is the temperature and q is the electric charge. To overcome this issue, a unified version of the entropy-ruled D/μ relation was proposed by Navamani (J. Phys. Chem. Lett., 2024, 15, 2519-2528) for hopping and band transport systems as where d, η and heff are the dimension (d = 1, 2, 3), chemical potential and effective entropy, respectively. Within this context, we investigate the CT properties of 2,5-bis(4-methoxyphenyl)thiazolo[5,4-d]thiazole (MOP-TZTZ) and 2,5-bis(2,4,5 trifluorophenyl)-thiazolo[5,4-d]thiazole (TFP-TZTZ) molecular solids using electronic structure calculations and the entropy-ruled method. The CT key parameters such as charge transfer integral and site energy are computed by matrix elements of the Kohn-Sham Hamiltonian. Using Marcus theory, the charge transfer rate is numerically calculated for MOP-TZTZ and TFP-TZTZ molecular crystals under different site energy disorder (ΔEij(E⃑)) situations. Using our entropy-ruled method, the exact diffusion-mobility (D/μ) and other transport quantities such as thermodynamic density of states, conductivity, and current density are calculated for these derivatives at different applied electric field values via the site energy disorder. The theoretical results show that the molecule TFP-TZTZ has good hole mobility (∼0.012 cm2 V-1 s-1) at a site energy disorder value of 90 meV. The obtained ideality factor from the Navamani-Shockley diode current density equation categorizes the typical transport as either the Langevin-type or Shockley-Read-Hall mechanism in the studied molecular solids. Our analysis clearly shows that both the electron and hole transport in these MOP-TZTZ and TFP-TZTZ molecules follow the trap-free Langevin mechanism, which is indeed ideal for designing charge-transporting molecular devices.

Lateral ambipolar drift of the excess charge carriers in the GaAs-based heterostructures with quantum wells and impurity δ-layers in the adjacent barriers

The low-temperature ambipolar photoconduction in the InGaAs/GaAs and GaAs/AlGaAs heterostructures containing the compositional quantum well (QW) tunnel-coupled with the impurity δ-well have been studied under a wide electric field range. The “stretched” bipolar drift length in the InGaAs/GaAs structure is shown to achieve a few mm at the fields of ∼70 V/cm and exceed that in the GaAs/AlGaAs structure at the comparable field strength by half an order of magnitude. The photoconductivity decay is up to several tens μs long and its behavior is fitted by the single- and “stretched-" exponent functions. The obtained results are shown to be caused by spatial separation of the non-equilibrium charge carriers in the potential profile engineered by such QW configuration and the dispersion law of holes in them.

Trap States and Carrier Diffusion in Czochralski (100) Single Crystal β-Ga2O3

Deep trap spectra and carrier diffusion lengths were measured for unintentionally doped β-Ga2O3 bulk crystals with (100) orientation. The 20-mm diameter, 15-mm length boule was pulled by the Czochralski method from gallium oxide in (010) direction. It is found that the net density of shallow donors in (100) plates cleaved from the crystal was 2.6 × 1017 cm−3, with ionization energies of 0.05 eV measured from admittance spectra. Three deep electron traps with respective ionization energies of 0.6 eV (concentration 1.1 × 1014 cm−3), 0.8 eV (concentration 3.9 × 1016 cm−3) and 1.1 eV (concentration 8.9 × 1015 cm−3) were detected by Deep Level Transient Spectroscopy. The dominant 0.8 eV trap is associated with the E2 centers due to Fe acceptors, the two other traps are the well documented E1 and E3 centers. The major deep acceptors in the lower half of the bandgap have optical ionization threshold of 2.3 eV and concentration of 4 × 1015 cm−3 and are believed to be due to the split Ga vacancies acceptors. The diffusion length of non-equilibrium charge carriers was 90 nm. The electrical properties of these (100) oriented crystals grown by Czochralski are quite similar to those synthesized by the undoped Edge-defined Film-Fed Growth technique.

Spectral (in)dependence of nonequilibrium charge carriers lifetime and density of states distribution in the vicinity of the band gap edge in F8BT polymer

Photoelectric properties of the F8BT polymer are investigated by the Constant photocurrent method (CPM) based on the photocurrent spectra Δjph(hν) and absorption spectra αCPM(hν). The negligibly weak dependence of charge carriers lifetime on the photon energy is found for hν = 2.2–2.7 eV. The peculiarities of the absorption spectra and the photoconductivity spectra are revealed to be determined mainly by the Gaussian distribution of the density of states (DOS). The density of trap states in the F8BT polymer thin films in the exponential DOS is estimated to be 103 times higher than in the Gaussian DOS.

OPTICALLY PUMPED BIPOLAR TRANSISTOR

The properties of a bipolar npn transistor were studied when exposed to unmodulated incoherent radiation created by a “white” LED. The static and dynamic characteristics of the transistor were measured at various exposure intensities. It is shown that the change in the characteristics of the transistor under optical influence is due to an increase in the lifetime of nonequilibrium charge carriers and the photovoltaic effect in p-n junctions. For these reasons, the gain increases, the switching threshold decreases, and the transistor speed increases. The results obtained are applicable both to the creation of high-speed transistors and integrated circuits of a fundamentally new type.

Unambiguous coupling between acoustic and electromagnetic emissions in plastically deformed crystals

An evident coupling between acoustic (AE) and electromagnetic (EME) emissions has been proved experimentally during plastic deformation of LiF ionic monocrystals under uniaxial compression with simultaneous recording of both AE and EME. The strong correlation between AE and EME demonstrate clearly that the observed EME is caused by dynamical dislocations and charged vacancies in the ionic lattice during work hardening. The theoretical interpretation proposed to explain the observable EME is based on the well-known Stepanov effect that means sweeping-up the charged vacancies of a preferable sign by gliding edge dislocations and formation of charged Cottrell clouds. During work hardening dislocation pile-ups are formed, and a certain nonequilibrium charge density is accumulated at their heads, resulting to the dynamic electric polarization of the deformed crystal. As the external loading increases, a locked dislocation pile-up bursts through the stoppers and quickly loses its bound charge. The relaxation of this charge produces intrinsic polarization currents generating electric pulses strongly correlated with dynamic dislocation process during plastic deformation. To build the theoretical model, it is assumed that the relaxation current can be described as an athermic viscous motion of vacancies under the kinetic friction force ∼Bυ (B is the friction coefficient and υ is the vacancy velocity) in a self-consistent electric field determined by the distribution of the total charge density. The electrical signal generated by an acting slip system has been calculated. By comparing the calculated and experimentally measured electric signal patterns, the friction coefficient for the linear chain of vacancies (the analogue of an edge dislocation extra-plane) in LiF has been estimated to be B≃ 0.9⋅10–5 g cm–1⋅s–1. This value is in accordance with the corresponding coefficient for dislocations in ionic lattices.

Terahertz photoconductive antennas based on silicon-doped GaAs (111)A

In this study we investigate a relatively new material for terahertz (THz) photoconductive antennas (PCAs): GaAs epitaxial films grown on (111)A-oriented semi-insulated GaAs substrates and doped with Si. GaAs:Si (111)A films with the required high resistance without postgrowth annealing have been grown by molecular-beam epitaxy. The Si doping of (111)A-oriented GaAs was expected to lead to the formation of acceptors that facilitate the activation of As[Formula: see text] traps. The relaxation times of nonequilibrium charge carriers in the films were measured in pump-probe experiment, and, finally, the electron mobility was estimated from the carrier lifetime and current–voltage characteristics measured under pulsed pumping by Ti:sapphire femtosecond laser. Dipole and bow-tie PCAs were fabricated, and the THz emission spectra and the total THz emission power were measured with varying applied voltage and optical excitation power. The properties of GaAs:Si (111)A films and the PCAs based on them are compared with LTG-GaAs (100) and (111)A-oriented films.

The effect of micro-deformations created by illumination on the temperature dependence of the mobility of nonequilibrium non-thermalized charge carriers in media without a center of symmetry

It is shown that the energy of nonequilibrium nonthermalized holes in ZnS crystals with a cubic unit cell does not depend on temperature. The nature of the temperature dependence of the nonequilibrium nonthermalized holes mobility in ZnS crystals depends on the average relaxation time upon scattering by ions and neutral impurity atoms, dislocations, and microstrains.

Contact electrification polarity of polyethylene particles: A morphology‐derived anomalous size dependence

AbstractThe size dependence of contact electrification (CE) for the same material particles is a common but poorly understood phenomenon. Generally, smaller particles acquire negative charges and larger particles positive charges. However, we discover that polyethylene particles can exhibit the opposite polarity under certain conditions. We demonstrate that the particle morphology, such as sphericity and surface roughness, plays a crucial role in determining the polarity, with more spherical and smoother particles being positively charged. This morphology effect can even alter the relative positions of materials in the triboelectric series. We propose a model that incorporates both the morphology and size effects to explain CE of the same material particles. The model successfully reproduces all our experimental results and predicts a nontrivial cyclic triboelectric sequence that we further confirm experimentally. This article reveals new insights into the nonequilibrium charge transfer mechanisms in CE.

SЕNSORS BASED ON POLYCRYSTALLINE 3C-SiC: IMPACT OF BORON DOPING

As a chemically inert wide bandgap semiconductor material with high hardness and thermal conductivity, stable electrical characteristics, silicon carbide SiC is attractive for harsh environment electronics and sensors applications. The concept of harsh environment includes extremes of temperature, pressure, shock loads, radiation and chemical attacks those arise in aircraft and automotive engines, industrial gas turbines, during oil and gas exploration, etc.
 Lower growing temperatures of polycrystalline cubic silicon carbide, pc-3C-SiC, compared to monocrystalline allow to significantly reduce its cost and expand the possibilities of application. It follows from previous works that the thermal sensitivity of pc -3C-SiC can be significantly increased by doping with an acceptor impurity of boron during the growth of the material. The purpose of this work is to determine the properties of pc-3C-SiC doped with boron for the creation of photosensors and thermosensors, as well as thermal anemometers for extreme operating conditions.
 It is shown that pс-3C-SiC doping with a boron impurity in the growth process causes the formation of acceptor-type centers in the band gap and the appearance of features in the photosensitivity spectrum, which may be of practical interest for photovoltaics. For temperatures T > 150K, the conductivity of the doped sample increases almost exponentially with an activation energy of 0.28 eV, which is close to the activation energy of the photoconductivity of the same sample. This indicates that the ionization process of equilibrium and non-equilibrium charge carriers occurs from the same impurity centers. Boron doping causes the appearance of a broad photoconductivity band with a maximum at 1.7 eV in the impurity absorption region of pc-3C-SiC, similar to the situation in single crystal 3C-SiC.
 It was determined that the temperature coefficient of resistance for boron-doped pc-3C-SiC is 3.0´10-2 K-1 at T=300K and 1.1´10-2 K-1 at T=700K, which is almost an order of magnitude higher than for thermocouples, as well as for metals from which anemometer threads are made. The discussion of the obtained results allows to associate the value of the activation energy E=0.28 eV with the level of shallow boron in pc-3C-SiC and to assume this center is a point defect containing a boron atom that replaces a silicon atom in the 3C-SiC lattice, i.e. BSi.
 Photosensors that can be used as solar cells in the near-IR range of 0.6 - 1.8 μm, and as photocells in the visible range of 0.4 - 0.6 μm are proposed. The ability of pc-3C-SiC to work in extreme operating conditions, as well as the low cost of device manufacturing technology based on it, compared to other SiC polytypes, allow it to be considered a suitable material for creating temperature sensors, thermo-anemometers and photosensors, as well as detectors for monitoring nuclear facilities.

Relaxation features of own photoconductivity in p-GaSe single crystals

The effects of the electric field, temperature, and initial value of the dark resistivity on the relaxation processes of intrinsic photoconductivity in single crystals of gallium monoselenide (p-GaSe) are studied. It is shown that although in all the samples under study, in the processes of establishment and disappearance of photoconductivity, the process of attachment of nonequilibrium charge carriers by attracting and repulsive centers in weak and stronger electric fields is, accordingly, inevitable, however, in samples of high-resistivity crystals, it is also necessary to take into account the significant influence of random macroscopic defects caused by layering.

Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

Changes induced by irradiation with 1.1 MeV protons in the transport properties and deep trap spectra of thick (>80 μm) undoped κ-Ga2O3 layers grown on sapphire are reported. Prior to irradiation, the films had a donor concentration of ∼1015 cm−3, with the two dominant donors having ionization energies of 0.25 and 0.15 eV, respectively. The main electron traps were located at Ec−0.7 eV. Deep acceptor spectra measured by capacitance-voltage profiling under illumination showed optical ionization thresholds near 2, 2.8, and 3.4 eV. The diffusion length of nonequilibrium charge carriers for ɛ-Ga2O3 was 70 ± 5 nm prior to irradiation. After irradiation with 1.1 MeV protons to a fluence of 1014 cm−2, there was total depletion of mobile charge carriers in the top 4.5 μm of the film, close to the estimated proton range. The carrier removal rate was 10–20 cm−1, a factor of 5–10 lower than in β-Ga2O3, while the concentration of deep acceptors in the lower half of the bandgap and the diffusion length showed no significant change.