The electronic and magnetic properties of Zn(V,Ni)O systems with 2.08 %, 4.16 %, 6.25 %, 8.3 %, and 12.5 % impurity concentrations were investigated based on ab initio simulations. The first-principles calculations were carried out using density functional theory and local spin density approximation by pseudopotential method. Analyzing the calculated density of states, the mechanism to stabilize the ferromagnetic phase in the 3d-metals doped ZnO systems is discussed. The analysis of the total density of states shows that the V-doped ZnO presents a metallic nature and Ni-doped ZnO exhibits a half-metallic character. First-principles calculations show that the stability of ferromagnetic or antiferromagnetic behaviors depends on impurity concentrations and impurity positions in related ZnO:V,Ni systems. Finally, we estimated and studied the Curie temperatures for V- and Ni-doped ZnO systems with different impurity concentrations. The Curie temperatures for VxZn1-xO and NixZn1-xO systems are higher than room temperature and these compounds are suitable ferromagnetic DMS materials for spintronic applications.
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