We have investigated the effect of electron and hole doping upon the structural and transport properties of RNiO 3 compounds undergoing a metal-insulator transition. Two different mechanisms modifying T MI have been isolated: carrier injection and size effects. Carrier injection leads to a contraction (or expansion) of the Ni-O bondlength, and the supression of the transition with a different rate depending on the sign of extra-carriers. Transport measurements are consistent with a two-band picture in the hole doped compounds.