Ni Doping Research Articles

Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces

Exsolution reactions enable the synthesis of oxide-supported metal nanoparticles, which are desirable as catalysts in green energy conversion technologies. It is crucial to precisely tailor the nanoparticle characteristics to optimize the catalysts’ functionality, and to maintain the catalytic performance under operation conditions. We use chemical (co)-doping to modify the defect chemistry of exsolution-active perovskite oxides and examine its influence on the mass transfer kinetics of Ni dopants towards the oxide surface and on the subsequent coalescence behavior of the exsolved nanoparticles during a continuous thermal reduction treatment. Nanoparticles that exsolve at the surface of the acceptor-type fast-oxygen-ion-conductor SrTi0.95Ni0.05O3−δ (STNi) show a high surface mobility leading to a very low thermal stability compared to nanoparticles that exsolve at the surface of donor-type SrTi0.9Nb0.05Ni0.05O3−δ (STNNi). Our analysis indicates that the low thermal stability of exsolved nanoparticles at the acceptor-doped perovskite surface is linked to a high oxygen vacancy concentration at the nanoparticle-oxide interface. For catalysts that require fast oxygen exchange kinetics, exsolution synthesis routes in dry hydrogen conditions may hence lead to accelerated degradation, while humid reaction conditions may mitigate this failure mechanism.

Elucidating the intrinsic relationship between redox properties of CeO2 and CH4 oxidation activity: A theoretical perspective.

Methane (CH4) oxidation is an important reaction to reduce the greenhouse effect caused by incomplete combustion of CH4. Here, we explored the mechanism of CH4 oxidation catalyzed by CeO2 and Ni-doped CeO2, focusing on the redox properties of these catalyst surfaces, using density functional theory (DFT). We found that the barriers for CH4* activation and H2O* formation are correlated with the surface redox capacity, which is enhanced by Ni doping. Furthermore, the complete reaction mechanism is explored by DFT calculations and microkinetic simulations on bare and Ni-doped CeO2 surfaces. Our calculations suggest that the doping of Ni leads to a much higher overall reactivity, due to a balance between the CH4* activation and H2O* formation steps. These results provide insights into the CH4 oxidation mechanism and the intrinsic relationship between redox properties and the activity of CeO2 surfaces.

Enhancing Low-Temperature Sensor Applications: Synergistic Effects of Ni Doping and SnO2 Interlayer on Spin-Coated ZnO Thin Films on Glass Substrate

This study investigates the effects of Nickel doping and a SnO2 interlayer on the structural, morphological, optical, and electrical properties of ZnO thin films. Undoped and Ni-doped ZnO films were fabricated on glass substrates, with and without an SnO2 interlayer, using the sol-gel spin coating method. The samples—denoted as ZG (undoped ZnO), NZG (Ni-doped ZnO), ZSG (undoped ZnO with SnO2 interlayer), and NZSG (Ni-doped ZnO with SnO2 interlayer)—underwent comprehensive characterization via XRD, AFM, PL, UV-Vis spectroscopy, Hall effect measurements, Hot probe, and Two-point method. XRD analysis confirmed successful Ni incorporation and enhanced ZnO crystallinity, particularly in the presence of the SnO2 interlayer. AFM analysis revealed improved grain distribution and size due to the synergistic effects of Ni doping and the SnO2 interlayer. UV-Vis results indicated significant impacts on transparency and the Urbach energy, with Ni doping alone broadening the bandgap. PL measurements showed that the synergistic effects quenched UV luminescence associated with the glass substrate, enhancing visible luminescence. Chromaticity analysis suggested that ZSG and NZSG samples are suitable for warm blue region applications. Electrical measurements revealed n-type conductivity across all films except NZG, with Ni doping increasing resistivity. Additionally, the ZSG (PTC) sensor exhibited a slightly higher sensitivity (0.3852 Ω/°C) compared to the NZSG sensor (0.3782 Ω/°C), with a similar trend observed in NTC sensors. These findings suggest that Ni-doped ZnO films with SnO2 interlayers could potentially serve as thermistors and RTDs, offering promising applications in temperature sensing and optoelectronics.

Harnessing the Synergistic Interplay between Atomic-Scale Vacancies and Ligand Effect to Optimize the Oxygen Reduction Activity and Tolerance Performance.

Defect engineering is an effective strategy for regulating the electrocatalysis of nanomaterials, yet it is seldom considered for modulating Pt-based electrocatalysts for the oxygen reduction reaction (ORR). In this study, we designed Ni-doped vacancy-rich Pt nanoparticles anchored on nitrogen-doped graphene (Vac-NiPt NPs/NG) with a low Pt loading of 3.5 wt . % and a Ni/Pt ratio of 0.038 : 1. Physical characterizations confirmed the presence of abundant atomic-scale vacancies in the Pt NPs induces long-range lattice distortions, and the Ni dopant generates a ligand effect resulting in electronic transfer from Ni to Pt. Experimental results and theoretical calculations indicated that atomic-scale vacancies mainly contributed the tolerance performances towards CO and CH3OH, the ligand effect derived from a tiny of Ni dopant accelerated the transformation from *O to *OH species, thereby improved the ORR activity without compromising the tolerance capabilities. Benefiting from the synergistic interplay between atomic-scale vacancies and ligand effect, as-prepared Vac-NiPt NPs/NG exhibited improved ORR activity, sufficient tolerance capabilities, and excellent durability. This study offers a new avenue for modulating the electrocatalytic activity of metal-based nanomaterials.

Harnessing the Synergistic Interplay between Atomic‐Scale Vacancies and Ligand Effect to Optimize the Oxygen Reduction Activity and Tolerance Performance

AbstractDefect engineering is an effective strategy for regulating the electrocatalysis of nanomaterials, yet it is seldom considered for modulating Pt‐based electrocatalysts for the oxygen reduction reaction (ORR). In this study, we designed Ni‐doped vacancy‐rich Pt nanoparticles anchored on nitrogen‐doped graphene (Vac‐NiPt NPs/NG) with a low Pt loading of 3.5 wt . % and a Ni/Pt ratio of 0.038 : 1. Physical characterizations confirmed the presence of abundant atomic‐scale vacancies in the Pt NPs induces long‐range lattice distortions, and the Ni dopant generates a ligand effect resulting in electronic transfer from Ni to Pt. Experimental results and theoretical calculations indicated that atomic‐scale vacancies mainly contributed the tolerance performances towards CO and CH3OH, the ligand effect derived from a tiny of Ni dopant accelerated the transformation from *O to *OH species, thereby improved the ORR activity without compromising the tolerance capabilities. Benefiting from the synergistic interplay between atomic‐scale vacancies and ligand effect, as‐prepared Vac‐NiPt NPs/NG exhibited improved ORR activity, sufficient tolerance capabilities, and excellent durability. This study offers a new avenue for modulating the electrocatalytic activity of metal‐based nanomaterials.

Toward High Corrosion Resistivity and High Efficiency in Seawater Oxygen Evolution: The Synergy of Fe and Ni Dopants in Co Layered Double Hydroxide Ultrathin Nanosheets

Toward High Corrosion Resistivity and High Efficiency in Seawater Oxygen Evolution: The Synergy of Fe and Ni Dopants in Co Layered Double Hydroxide Ultrathin Nanosheets

Exploring the Impact of Ni Doping in Tuning the Bandgap, Electronic, Optoelectronic and Photocatalytic Properties of ZnFe2O4

AbstractThe exploration of semiconductor nanostructures utilizing mixed metal materials is an emerging area of study across fields including field‐effect transistors, chemical sensors, photodetectors, photocatalysts, and many more. In this study, Schottky diodes based on ZnFe2O4 (ZFO) were constructed with an aim to tune their electronic and optoelectronic characteristics. Here, Ni doping facilitated the tuning of electronic properties, leading to a significant increase in the rectification ratio from 238 to 1172, along with a reduction in the potential barrier height from 0.67 V to 0.65 V. This is attributed to Ni's role as a charge carrier in ZFO, enhancing carrier concentration, confirmed by Mott‐Schottky analysis. The 5 mol % Ni‐doped ZFO also exhibited remarkable light sensitivity, with its rectification ratio surging to 1795 under illumination, four times that of the undoped version. Additionally, its photo‐sensitivity soared to 42.46 %, nearly quadrupling the undoped device's performance, and its power gain impressively climbed to 38.4 %, which is over twelvefold the undoped sample's output. Furthermore, the diode responds strongly to optical illumination, making this structure suitable for use as a photodiode or photosensor. Apart from that by employing a doping strategy, we achieved 64.61 % degradation of methylene blue dye under visible light in 120 minutes, compared to 36.85 % for the undoped sample. These indicate that hydrothermally synthesized Ni‐doped ZFO is promising for visible light‐driven multifunctional applications.

Tuning the Electronic And Transport Properties of CaMoO4 Nanofibers with High-Spin Ni for Efficient and Stable Supercapacitors.

Calcium molybdate (CaMoO4) has recently garnered considerable attention for supercapacitors due to its stable crystal structure and cost-effective preparation. However, CaMoO4 prepared by traditional processes still suffered from insufficient electrochemical active sites and poor electrical conductivity so far, thus leading to the performance of CaMoO4-based supercapacitors being inferior to the state-of-the-art ones. CaMoO4 nanofibers with a high specific surface area exhibit great potential for supercapacitors due to their ability to offer increased charge storage. Herein, mesoporous CaMoO4 nanofibers anchored with Ni nanoparticles were fabricated via electrospinning combined with subsequent thermal treatment. Density functional theory calculation and UV-vis spectrophotometer results show that high-spin state Ni nanoparticles can tune the electronic structure of CaMoO4 nanofibers, decreasing the band gap by about 0.67 eV. Electron paramagnetic resonance (EPR) studies imply that Ni doping influences the electronic structure by reducing the oxygen vacancy concentration and introducing hyperfine structures associated with Ni spins. These can result in higher power and energy density in supercapacitors. As a result, a specific capacitance of 1253.7 F·g-1 at a current density of 0.5 A·g-1 and an 86% retention rate after 2000 cycles at a higher current density of 5 A·g-1 have been achieved for Ni0.25Ca0.75MoO4-based supercapacitor. Furthermore, an asymmetric supercapacitor (ASC) device with the optimized CaMoO4/Ni//AC structure has been demonstrated with the energy density of 49.43 Wh·kg-1 and power density of 2700 W·kg-1, thus enabling lightening a red light-emitting diode. The current strategy might pave the way for CaMoO4 for practical applications for high-power supercapacitors.

Ionic Liquid-Assisted Synthesis of Higher Loaded Ni/Fe Dual-Atom Catalysts in N, F, B Codoped Carbon Matrix for Accelerated Sulfur Reduction Reaction.

In response to mitigating the severe shuttle effect within lithium-sulfur batteries, single-atom catalysts have emerged as one of the most effective solutions. Here, N, F, B codoped porous hollow carbon nanocages (NFB-NiFe@NC) with high Ni and Fe doping are rationally designed and synthesized using ionic liquids (ILs) as dopants. The introduction of ILs inhibits the growth of zeolitic imidazolate framework-8 (ZIF8), resulting in NFB-ZIF8 precursors with smaller particle sizes, enabling higher loading dual-atom catalysts. Meanwhile, the abundant heteroatoms increase the reactive sites and alter the carbon matrix's nonpolar intrinsic properties, thus enhancing the chemisorption of polysulfides. The synergistic interaction of the heteroatoms with Ni and Fe dual-atoms ultimately promotes the catalytic conversion kinetics of polysulfides. As a result of these beneficial properties, the cells prepared using the NFB-NiFe@NC modified separator exhibit significantly improved performance, including a high initial capacity of 1448 mAh g-1 at 0.2 C. Even at a high S-loading of 7.6 mg cm-2, the ideal area capacity of 8.38 mAh cm-2 can still be maintained at 0.1 C. New insights are provided here for designing highly loaded dual-atom catalysts for application in lithium-sulfur batteries.

Ultra-broadband emission from Mg7Ga2GeO12:Ni2+,Cr3+ phosphor spanning the NIR I–III regions for spectroscopy applications

Ultra-broadband near-infrared (NIR) lighting sources covering NIR Ⅰ to III regions are pivotal components for NIR spectroscopy devices. However, achieving ultra-broadband and efficient emission covering the entire NIR Ⅰ to III regions remains a significant challenge. To address this, we selected Mg7Ga2GeO12 as host material to realize ultra-broadband NIR emission. Density functional theory calculations on formation energies confirmed the feasibility of doping both Ni2+ and Cr3+ within Mg7Ga2GeO12. Band structure calculations reveal a significantly reduced band gap upon the doping of Ni2+. Following that, we synthesized Mg7Ga2GeO12:Ni2+ through conventional solid-state-reaction method. This phosphor exhibits broadband NIR emission with a full-width-at-half-maximum of 377 nm in the range of NIR II ∼ III (1100–2100 nm). To further enhance the emission efficiency, we co-doped Mg7Ga2GeO12:Ni2+ phosphor with Cr3+. This co-doping strategy not only dramatically enhances the Ni2+ emission intensity, but also extends the lower limit of emission band to 600 nm. However, a spectral gap around 1150 nm remains between Cr3+ and Ni2+ emission centers. To bridge this spectral gap, we employed LiScSiO4:Cr3+ phosphor alongside Mg7Ga2GeO12:Ni2+,Cr3+ phosphor to fabricate a phosphor converted LED (pc-LED) with ultra-broadband NIR emission covering entire NIR Ⅰ to III regions. By utilizing this pc-LED as the lighting source for NIR spectral detection, multiple organic functional group signals can be identified simultaneously in NIR II and III bands from 1000 to 2100 nm. The performance of such an NIR pc-LED not only confirms the application potential of Mg7Ga2GeO12:Ni2+,Cr3+ phosphor in non-destructive spectral analysis but also underscores the feasibility of combining two phosphors to achieve ultra-broadband NIR pc-LEDs, rendering them suitable to be lighting sources for portable spectrometers.

Adsorption and Sensing Properties of Ni-Modified InSe Monolayer Towards Toxic Gases: A DFT Study

The emission of toxic gases from industrial production has intensified issues related to atmospheric pollution and human health. Consequently, the effective real-time monitoring and removal of these harmful gases have emerged as significant challenges. In this work, the density functional theory (DFT) method was utilized to examine the adsorption behaviors and electronic properties of the Ni-decorated InSe (Ni-InSe) monolayer when interacting with twelve gases (CO, NO, NO2, NH3, SO2, H2S, H2O, CO2, CH4, H2, O2, and N2). A comparative assessment of adsorption strength and sensing properties was performed through analyses of the electronic structure, work function, and recovery time. The results show that Ni doping enhances the electrical conductivity of the InSe monolayer and improves the adsorption capabilities for six toxic gases (CO, NO, NO2, NH3, SO2, and H2S). Furthermore, the adsorption of these gases on the Ni-InSe surface is characterized as chemisorption, as indicated by the analysis of the adsorption energy, density of states, and charge density difference. Additionally, the adsorption of CO, NO, NO2, and SO2 results in significant alterations to the bandgap of Ni-InSe, with changes of 18.65%, 11.37%, 10.62%, and −31.77%, respectively, underscoring its exceptional sensitivity. Moreover, the Ni-InSe monolayer exhibits a moderate recovery time of 3.24 s at 298 K for the SO2. Consequently, the Ni-InSe is regarded as a promising gas sensor for detecting SO2 at room temperature. This research establishes a foundation for the development of an Ni-InSe-based gas sensor for detecting and mitigating harmful gas emissions.

Nickel-doped and surface fluorinated tungsten trioxide photoanode with enhanced photoelectrochemical water oxidation

To improve the slow charge transfer and high electron-hole recombination rate of tungsten trioxide (WO3), a nickel-doped and surface fluorinated WO3 photoanode is proposed. Compared with the unmodified and one-step modified WO3 photoanodes, the co-modified F/Ni-WO3 with two steps exhibits superior photoelectrochemical (PEC) performance with a significantly high photocurrent density of 1.03 mA/cm2 compared to 0.51 mA/cm2 of bare WO3 at 1.23 V vs. RHE. Ni doping can accelerate the kinetics of water oxidation and extend the light absorption range of the WO3 photoanode, while surface fluorination can enhance the surface electronegativity and hydrophilicity of the WO3 photoanode. The synergistic influence of the Ni doping and surface fluorination results in a lower carrier transport impedance, higher charge separation efficiency and larger electrochemically active surface of the WO3 photoanode which eventually contribute to the enhanced PEC performance for water oxidation.

Structural and Optical Properties of Nickel-Doped Zinc Sulfide.

In this study, undoped and Ni-doped ZnS nanoparticles were fabricated using a hydrothermal method to explore their structural, optical, and surface properties. X-ray diffraction (XRD) analysis confirmed the cubic crystal structure of ZnS, with the successful incorporation of Ni ions at various doping levels (2%, 4%, 6%, and 8%) without disrupting the overall lattice configuration. The average particle size for undoped ZnS was found to be 5.27 nm, while the Ni-doped samples exhibited sizes ranging from 5.45 nm to 5.83 nm, with the largest size observed at 6% Ni doping before a reduction at higher concentrations. Fourier-transform infrared (FTIR) spectroscopy identified characteristic Zn-S vibrational bands, with shifts indicating successful Ni incorporation into the ZnS lattice. UV-visible spectroscopy revealed a decrease in the optical band gap from 3.72 eV for undoped ZnS to 3.54 eV for 6% Ni-doped ZnS, demonstrating tunable optical properties due to Ni doping, which could enhance photocatalytic performance under visible light. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) analyses confirmed the uniform distribution of Ni within the ZnS matrix, while X-ray photoelectron spectroscopy (XPS) provided further confirmation of the chemical states of the elements. Ni doping of ZnS nanoparticles alters the surface area and pore structure, optimizing the material's textural properties for enhanced performance. These findings suggest that Ni-doped ZnS nanoparticles offer promising potential for applications in photocatalysis, optoelectronics, and other fields requiring specific band gap tuning and particle size control.

Low-temperature/room-temperature gas sensing application for NO2 gas by SnO2 and Ni doped SnO2 nanostructures synthesized by sol-gel method

Gas sensors are the attentive parts for the day-to-day applications in advanced manufacturing, chemical industries and advanced applications need the better performing materials. SnO2 (wide band gap-3.27eV, n-type semiconductor) and Ni-doped SnO2 are the suitable materials for gas sensing in the fields of forward-looking technology. Pure and Ni-doped SnO2 particles were synthesized by sol-gel method and started with 0.2 mol of SnCl2, added with 2 ml of acetic acid, and pH controlled by the addition of 8 mol NaOH, till pH reaches desired value and Ni is doped. Finally washed, dried, and calcined at 400° C. The prepared pure and Ni(0.02 and 0.04 mol)-doped SnO2 nanostructures were characterized by XRD, EDAX, DSC, and SEM techniques. Average crystallite size is calculated by XRD and varied from 8 to 5 nm. Morphology shows difference, while the Ni concentrations changed. Particle size is estimated by transmission electron microscope (TEM), found to be 8–12 nm and well correlated with XRD analysis. The Energy gap is calculated with the UV–Vis spectrometer, and values are 3.21, 3.60, and 3.56 eV. Finally, the application part was carried out for NO2 gas sensing at a low level of 7–19 parts per million (PPM) at 40 °C, response and recovery times are 6 and 9 min respectively for all PPMs. Sensitivity of the samples of pure and Ni doped samples have 99 to 99.9 and 80 %. Pure and 0.02 mol Ni doped samples have the good achievement for sensitivity and 0.04 mol Ni doping has increase in conductance.

A stable ZnMn2O4 cathode for aqueous Zn-ion batteries via Ni doping to suppress Mn dissolution

ZnMn2O4 (ZMO) emerges as a promising cathode for aqueous Zn-ion batteries due to its high theoretical capacity of 224 mAh g−1 and operating voltage of ∼1.9 V (vs. Zn2+/Zn). However, it suffers from capacity degradation over cycling, attributed to the dissolution of redox-active Mn through Mn3+ disproportionation. In this study, we propose a strategy to stabilize ZMO cathodes by transforming Mn3+ into Mn4+ via Ni doping, aiming for charge balance. The ZnMn2−xNixO4 (x = 0, 0.5, 1.0, and 1.5) with different Ni amounts was prepared by straightforward precipitation and calcination. The mitigation of redox-active Mn dissolution enhanced the specific capacity of all Ni-doped ZMO compared to 201 mAh g−1 of ZMO. ZnMn1.5Ni0.5O4 and ZnMnNiO4 exhibit 277 and 278 mAh g−1, respectively, surpassing ZMO’s theoretical capacity (224 mAh g−1) of ZMO. This additional capacity was attributed to MnOx deposition on the cathode and the charge storage reaction with Zn-ion within the MnOx deposit. Furthermore, Ni doping induces a structural transition of the tetragonal into a cubic spinel, expanding the unit cell volume. This structural modification combined with suppressed Mn dissolution contributes to improved cycling stability. ZnMnNiO4 exhibits 80 % retention of initial capacity after 1000 cycles, outperforming ZMO (57 % retention). The expanded unit cell reduces repulsion between inserted Zn ions, enabling a higher rate performance than pure ZMO. The change in Mn valence states induced by Ni doping enhanced the lifespan and rate capability of ZMO cathodes, underscoring their potential as cathodes for Zn-ion batteries.

Different enhancement of Ni doping on La0.3Sr0.7Fe0.9Ti0.1O3-δ electrodes in symmetrical solid oxide cell

Poor catalytic activity is a significant challenge that needs to be addressed to enable the effective use of perovskite electrodes in symmetrical solid oxide cell (SOC). In this study, high-activity Ni ions were doped into the La0.3Sr0.7Fe0.9Ti0.1O3-δ (LSFTi91) perovskite lattice, which endowed the materials with different facilitation effects in different atmospheres. In an oxidizing atmosphere, the introduction of Ni ions enables La0.3Sr0.7Fe0.8Ti0.1Ni0.1O3-δ (LSFTNi811) to exhibit higher conductivity and oxygen vacancy content, which enhances the adsorption and dissociation of gases. When used as symmetrical electrodes in a solid oxide electrolysis cell, the LSFTNi811 symmetric cell presents higher electrolysis performance than LSFTi91 (1.78 A cm−2 vs. 1.57 A cm−2) at 1.5 V and 800 °C. This is the highest level reported for a single-phase perovskite electrode, underlining its excellent catalytic activity. In a reducing atmosphere, although Ni doping weakens the structural stability of the material, a large number of NiFe nanoparticles precipitate the H2 reaction after material decomposition. In this situation, LSFTNi811 achieves better performance than LSFTi91 as a symmetrical electrode for the solid oxide fuel cell both before and after decomposition. Therefore, LSFTNi811 is a promising symmetrical electrode material for SOCs.

Multi-cation doped CuCrO[formula omitted] crystallite matrix: Exploring bandgap tunability through Ni-Zn and Ni-Zn-Mg doping for optoelectronic application

Bandgap tuning is a key approach to optimizing materials for advanced technologies, enabling the development of more efficient and specialized devices. In this study, we demonstrate the tunability of the bandgap of CuCrO2 from 2.38 to 4.37 eV via single cation-doping with Ni and Zn, and multi-cation doping with Ni-Zn and Ni-Zn-Mg. XRD analysis reveals structural changes due to lattice distortions by cationic substitution, while FESEM shows the impact of doping on particle size, surface morphology, and crystallinity. The lamellar structure observed with multi-cation doping in FESEM investigations indicates increased structural disorder and defects, causing tailing above the valence band and below the conduction band, significantly reducing the bandgap. The effect of Zn-Ni doping on the lattice is reversed with Mg2+ insertion due to p-p orbital interactions between Mg2+-O, replacing the d-p interaction in the Cr3＋-O bond, as confirmed by optical studies. UV–Vis and photoluminescence analyses reveal significant shifts in bandgaps and emission spectra, with Ni doping yielding a bandgap of 3.97 eV, Zn doping 3.16 eV, Zn-Ni doping expanding it to 4.37 eV, and Zn-Ni-Mg doping reducing it to 2.38 eV. The dopants also affect emission characteristics, including band edge and deep-level emissions. This study provides valuable insights into the relationship between cationic doping and material properties, guiding the design of CuCrO2-based materials with tailored functionalities.

Influence of increase in dislocation density due to Ni doping on the blue-photoluminescence of Mn-ferrite nanocrystals

Influence of increase in dislocation density due to Ni doping on the blue-photoluminescence of Mn-ferrite nanocrystals

Electron field emission property of NiO-decorated ZnO nanorods grown on diamond films

ZnO/micron diamond (MCD) composite structure combines two wide-band gap semiconductor materials, providing stable performance suitable for high-performance electron field emission (EFE) devices operating in various complex environments. Nonetheless, the optical and electrochemical limitations of ZnO constrain its effectiveness. Typically, NiO can compensate these inherent defects in ZnO, thereby enhancing the performance of field-emitting devices. In this research, NiO-decorated ZnO thin films were fabricated on diamond surfaces using hydrothermal/sol-gel two-step method. The impact of varying Ni doping concentrations caused by nickel acetate solutions on the field emission properties was thoroughly investigated. Furthermore, this study involved the fabrication of NiO-decorated ZnO/micron diamond heterojunction composite structures, exploring the impact of the structure on the optoelectronic performance of the devices. The Ni doping concentration increases in the NiO films formed between the ZnO nanorods, the doped Ni exists in the ZnO/MCD composite structure as both Ni2+ and Ni3+, which are important materials for semiconductor electronic devices. The NiO decoration process induced the creation of defect levels within the bandgap of the nanorod array structure, consequently enhancing the photoluminescence performance of ZnO. Furthermore, the interaction between NiO and ZnO facilitated the formation of a p-n junction at the interface, generating an internal electric field. This electric field significantly improved the current conduction field and maximum current density of ZnO, thereby enhancing its electric field emission performance. The optical and electrical properties of ZnO nanorods doped at 0.1M exhibited the most favorable characteristics among all tested samples. At a doping concentration of 0.1 M, the turn-on electric field reaches a minimum value of 0.96 V/μm and the maximum current density J reaches a maximum value of 2.54 mA/cm2. These results offer novel insights for advancing the development of integrated broadband optical devices.

Synthesis and Electrochemical Performance Enhancement of Li2MnSiO4 Cathode Material for Lithium‐Ion Batteries via Mn‐Site Ni Doping

AbstractIn exploring the potential of Li2MnSiO4 as a cathode material for lithium‐ion batteries (LIBs), the key challenges often involve enhancing electronic conductivity and lithium‐ion diffusion rates. To address these issues, this paper proposes the combination of solid‐state doping and a two‐step calcination process to successfully prepare the Li2Mn1−xNixSiO4 series of cathode materials, where Ni substitutes Mn at different doping amounts (x = 0, 0.02, 0.04, 0.06, 0.08). The use of chemically equivalent Ni2+ ions to replace Mn2+ ions is an effective method. Since the ionic radius of Ni2+ is smaller than that of Mn2+, this substitution can create more voids in the lattice structure. These increased voids provide smoother channels for the transport of electrons and lithium ions, thereby improving the material's electrical conductivity. At a Ni doping amount of 0.06, the material exhibits optimal electrochemical performance, achieving a discharge capacity of 155 mAh g−1 at 0.1 C, significantly superior to undoped lithium manganese silicate. The doping of Mn sites with Ni significantly improves the conductivity and lithium‐ion diffusion capabilities of Li2MnSiO4, revealing the tremendous potential of doping strategies in optimizing the performance of LIBs cathode materials.