The results of thermoelectric power and the electrical resistivity measurements connected with the intermediate valence (IV) of Ce are presented for the compounds CeM 2Si 2 (M = Fe, Co, Ni) in the temperature range of 4–800 K. It is shown that CeM 2Si 2 are Kondo-lattices with the coherence scale T coh ∼ 60–80 K and the so-called single-site Kondo temperature T K ∼ 10 3 K. On the example of CeNi 2Si 2 we have studied the changes in the structure of density of f states (f-DOS) near the Fermi energy caused by atomic substitutions. The results of structural, transport, magnetic, and Ce L III X-ray absorption spectra measurements in the series Ce 1− x La x Ni 2Si 2 (0 ≤ x ≤ 0.6), Ce(Ni 1− y Cu y ) 2Si 2 (0 ≤ y ≤ 0.6) and CeNi 2(Si 1− z Ge z ) 2 (0 ≤ z ≤ 0.5) are presented. We found that the IV state of Ce in the CeM 2Si 2 is an evidence of possible opening a wide pseudogap Δ ∼ kT K within the f-DOS structure slightly above the Fermi energy.