Abstract GaSb-based nanopillar arrays photocathodes have great potential in fields such as thermal photovoltaic systems, solar cells, and low light night vision due to their high long-wave sensitivity, good stability, and low cost. However, the characteristic that the electrons emitted from its side are easily to be captured by the adjacent units results in a generally low net quantum efficiency. We design a GaInAsSb NPAs photocathode with nanopillars and wafers made of the same material. By adjusting the height of the pillar, we can achieve changes in the cathode emitter, which can be directed to achieve high-efficiency photocathodes according to application scenarios. Using FDTD method, the influence of NPA surface density on the performance of different emitter cathodes was simulated. In addition, we investigated the effects of incident angle and external electric field on the emission performance of the cathode. The results indicate that there is an optimal incident angle that allows the wafer to achieve an EQE close to 18%, while the external electric field enhances the EQE of the nanopillar. The work improves the net efficiency of GaSb-based photocathodes, which has guiding significance for the research and development of high-efficiency infrared photocathodes.
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