Negative Resistance Theory Research Articles

Design of the Dielectric Resonator Oscillator with Buffer Amplifier

A new structure of microwave field effect transistor Dielectric Resonator Oscillator (DRO) working at 8.5GHz is presented with negative resistance theory and harmonic balance theory. In order to magnify the output power and enhance the load pulling, a Buffer Amplifier (BA) is designed after the DRO. The nonlinearity and linearity of this structure are analyzed and optimized with commercial software ADS. Then the properties of this structure are simulated with commercial software HFSS. Simulation results show that DRO co-integrated with BA a high output power of 13.426dBm, at an oscillation frequency of 8.5GHz.

Theory of negative resistance of junction field-effect transistors

A general theory of the voltage-controlled negative resistance in a field-effect transistor is presented. The prerequisite to the negative resistance is mathematically determined as a relation among the source-gate voltage, the source-drain voltage, and the pinchoff voltage. It is suggested that there will be a variety of circuit configurations with the positive feedback function applied to the gate of the field-effect transistor. Three basic examples of the practical application of the theory are also given.

Extensions of the small-signal theory of negative resistance in gallium arsenide

The small-signal model for the Gunn effect proposed by Englemann and Quate is revised to include the effects of average mobility of the two-valley system in the expressions for carrier velocity as a function of electric field. The dispersion relation is then rederived, and computed results consistent with experimental observations are shown.

Negative Resistance in GaS Single Crystals

AbstractThe I‐U characteristic of GaS single crystals has four distinct zones: a low‐voltage zone which is ohmic, a zone in which the current depends on the voltage by a relationship of the I ∝ U2 type, a third zone in which the slope of the characteristic is very sharp and current pulses are present and a fourth in which the characteristic is negative. Experimental findings have led us to suppose that this behaviour of GaS can be explained by Lampert's theory of negative resistance in insulators.