Abstract Silicon carbide (SiC)-based diodes are widely used due to their high temperature resistance. In this paper, breakdown voltage of 4H-SiC JBS diodes and capacitance-voltage of 4H-SiC MOS capacitors with identical interfacial structure were both measured at high temperature to study their interfacial properties. By analyzing the variation of interfacial properties, the correlation between thermal stress and failure mode of 4H-SiC JBS diodes was further established to reveal their degradation mechanism. During initial high temperature storage, interfacial negative effective charge density of 4H-SiC JBS diodes may increase, leading to the decrease of breakdown voltage. As storage time increases, interfacial charge density began reducing, resulting in the increase of breakdown voltage. Avalanche luminescence verifies that the variation of interfacial charge density under thermal stress led to the degradation of 4H-SiC JBS diodes and further affected their breakdown voltage. Finally, degradation mechanism of SiC-JBS, SiC-SBD and SiC-PIN diodes under irradiation stress was investigated. After irradiation, forward current of some SiC diodes increased at a small forward voltage. However, the reverse characteristics deteriorated obviously and even failed.