NbN Films Research Articles

Magnetotransport of fluxoids in intermediate-phase type-II superconducting NbN thin films around Tc

The mixed state transport properties of type-II superconductors are strongly influenced by the dynamic behavior of quantized magnetic fluxoids around the critical temperature (Tc), where a combination of normal and superconducting properties is exhibited. To understand the mixed state transport properties of type-II superconducting NbN ultrathin films (2D) we measured sheet resistance (RxxM) and Hall resistance (RxyM) of a 5-nm-thick NbN film around Tc (10.75 K) at temperatures 10.40, 10.68, and 10.77 K. Hall resistance (HR) was measured in external out-of-plane and in-plane magnetic fields up to 6 T, using 100 µA and 1 mA driving current in Van der Pauw geometry. The electric field of applied bias and Lorentz force of applied external magnetic field causes a movement of the normal conducting electrons within each fluxoid. The moving fluxoids cause dissipation and generation of Hall voltage. We developed a macroscopic analysis of the Hall resistance arising from fluxoids, to advance the differentiation between dissipating current and superconducting currents in type-II superconductors at Tc. We have extracted the number of normal conducting carriers per fluxoid and areal density and mobility of the fluxoids in dependence on the external magnetic field. This differentiation provides valuable insights into the dissipation mechanisms observed during transport measurements, e.g., after localized heating due to single photon absorption in nanostructured type-II superconductors. Furthermore, the developed macroscopic analysis of Hall resistance of fluxoids shows promising potential for investigating the fundamental aspects of fluxoid-defect interactions in type-II superconductors. Published by the American Physical Society 2024

Signature of the Reduced Sound Velocity in Thin NbN Films

Signature of the Reduced Sound Velocity in Thin NbN Films

Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing

Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing

NbN thin films grown on silicon by molecular beam epitaxy for superconducting detectors

Superconducting nanowire single photon detectors (SNSPDs) made with thin NbN films can reach high performances. While sputtering has been the deposition method of choice, here, we show that ammonia-molecular beam epitaxy (NH3-MBE) can produce pertinent epitaxial cubic NbN thin films on silicon substrates using an AlN buffer. Despite granular morphology and a high density of grain boundaries as well as the presence of rotational twins, Tc = 12.7 K for a 5.6 nm thick film and saturation of internal detection efficiency up to 850 nm are achieved. Morphology and stoichiometry as well as strain have a strong impact on the detector properties, highlighting the importance of a precise control of the growth parameters. These results pave the way for high fabrication yield of SNSPDs on large-scale silicon wafers using epitaxial NbN thin films grown by MBE.

CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer

We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or Hc2 (34.06 T boost in Hc2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.

High-uniformity atomic layer deposition of superconducting niobium nitride thin films for quantum photonic integration

Atomic layer deposition (ALD) has been identified as a promising growth method for high-uniformity superconducting thin films for superconducting quantum photonic applications, offering superior uniformity, thickness control and conformality to techniques such as reactive sputtering. The potential scalability of ALD makes this method especially appealing for fabrication of superconducting nanowires and resonators across large areas. We report on the growth of highly uniform superconducting NbN thin films via plasma-enhanced atomic layer deposition (PEALD) with radio frequency substrate biasing, on a 200 mm (8 inch) Si wafer, specifically for superconducting nanowire single-photon detector applications. Niobium nitride films were grown using (tert-butylimido)-tris(diethylamido)-niobium(V) precursor and an H2/Ar plasma. The superconducting properties of a variable thickness series of films (5.9–29.8 nm) show critical temperature (T c) of 13.5 K approaching bulk thickness (28.8 nm) with low suppression down to the ultrathin regime (5.9 nm), with T c = 10.2 K. T c across the 200 mm wafer with 8 nm thick NbN, measured in 15 mm intervals, exhibits minimal variation (<7%). Microbridge structures fabricated on 8 nm thick NbN films also exhibit high critical current densities (J c), > 10 MA cm−2 at 2.6 K. PEALD could therefore be a pivotal technique in enabling large-scale fabrication of integrated quantum photonic devices across a variety of applications.

Restriction of vortex motion in superconducting NbN film via ion irradiation

Restriction of vortex motion in superconducting NbN film via ion irradiation

Competing length scales and 2D versus 3D dimensionality in relatively thick superconducting NbN films

Magneto-transport characteristics of 2D and 3D superconducting layers, in particular, temperature and angular dependences of the upper critical field Hc2, are usually considered to be fundamentally different. In the work, using non-local resistance measurements at temperatures near the normal-to-superconducting transition, we probed an effective dimensionality of nm-thick NbN films. It was found that in relatively thick NbN layers, the thicknesses of which varied from 50 to 100 nm, the temperature effect on Hc2 certainly pointed to the three-dimensionality of the samples, while the angular dependence of Hc2 revealed behavior typical for 2D samples. The seeming contradiction is explained by an intriguing interplay of three length scales in the dimensionally confined superconducting films: the thickness, the Ginzburg–Landau coherence length, and the magnetic-field penetration depth. Our results provide new insights into the physics of superconducting films with an extremely large ratio of the London penetration depth to the Ginzburg–Landau coherence length exhibiting simultaneously 3D isotropic superconducting properties and the 2D transport regime.

Sharpness of the Berezinskii-Kosterlitz-Thouless Transition in Disordered NbN Films.

We present a comprehensive investigation of the Berezinskii-Kosterlitz-Thouless transition in ultrathin strongly disordered NbN films. Measurements of resistance, current-voltage characteristics, and kinetic inductance on the very same device reveal a consistent picture of a sharp unbinding transition of vortex-antivortex pairs that fit standard renormalization group theory without extra assumptions in terms of inhomogeneity. Our experiments demonstrate that the previously observed broadening of the transition is not an intrinsic feature of strongly disordered superconductors and provide a clean starting point for the study of dynamical effects at the Berezinskii-Kosterlitz-Thouless transition.

NbN films with high kinetic inductance for high-quality compact superconducting resonators

NbN films with high kinetic inductance for high-quality compact superconducting resonators

Compact superconducting transmon qubit circuits made of ultrathin NbN

We design and fabricate a compact superconducting qubit circuit made of nano-thick NbN film on a high-resistivity silicon substrate, carrying seven transmon qubits. By comparing with the conventional superconducting qubit circuits made of superconducting films with hundred-nanometer thickness, our superconducting qubit circuit has much smaller size in the readout circuit, whose resonator length is only about 1/20 of that in a conventional superconducting circuit. Transmons are measured and characterized in the frequency and time domains with different flux bias. The transition frequency f01 can be adjusted in the range of several GHz. The qubit circuits made of such nano-thick material with high kinetic inductance are promising in the integration of quantum circuits.

Saturating quantum efficiency of SNSPDs with disorder manipulation of NbN films

Quantum efficiency is one of the most important performance metrics for superconducting nanowire single-photon detectors (SNSPDs). Specifically, near-infrared NbN-SNSPDs with high quantum efficiency are extremely desirable in quantum communications. However, due to the high energy gap of NbN, it is difficult to achieve a saturated quantum efficiency. In this paper, we systematically investigated the primary determinants of fabricating highly saturated NbN-SNSPD by changing the stoichiometric ratio during the growth of NbN thin films. Through electron beam lithography and reactive ion etching processes, NbN-SNSPDs with a saturated quantum efficiency were fabricated. It is worth noting that the saturated quantum efficiency is observed to be closely related to the stoichiometric ratio of NbN films. Artificially increasing the disorder in NbN films can enhance the probability of superconducting phase transition during photon detection. Our work provides a consistently simple and effective method for the fabrication of highly efficient quantum devices, which is crucial for achieving higher precision in future quantum communications.

Chemical Interaction of Hydrogen Radicals (H*) with Transition Metal Nitrides.

Transition metal nitrides (TMNs) are reported as protective coatings in reactive hydrogen environments. Although the permeation of H2 through TMN coatings is well reported, their reducibility in H* environments is less investigated. In this work, we categorize the interaction of H* with ambient exposed TiN, ZrN, HfN, VN, NbN, and TaN thin films at 700 °C into three classes. We find that in TiN and VN samples, H*-induced reduction was limited to the surface (≈ top 2 nm). Significant denitridation was observed in ZrN and HfN samples beneath the surface, along with an increase in the transition metal oxide (TMOx) fraction. Denitridation was observed in NbN and TaN samples as well, but the increase in the TMOx content was less than for ZrN and HfN. We propose a model in three steps: hydrogenation, formation of volatile species, and diffusion of subsurface atoms to the surface. We show that the interaction of H* with TiN, ZrN, HfN, VN, NbN, and TaN with partially oxidized surfaces can be explained using the preferred hydrogenation pathway (based on the work functions) and the thermodynamic driver for forming volatile species (NH3 and H2O; based on the change in Gibbs free energy).

Epitaxial growth of NbN thin films for electrodes using atomic layer deposition

The epitaxial growth of NbN thin film was accomplished via atomic layer deposition (ALD) for the first time using NbCl5 and NH3 as the Nb precursor and nitrogen source at a deposition temperature of 450 ℃. The cubic NbN thin film was grown epitaxially on a cubic MgO crystal through the coherent lattice matching between NbN and MgO with a small lattice mismatch (∼2.8%). A high concentration of Cl impurity of 4–5% remained in NbN thin films grown on a SiO2 substrate using ALD. However, the Cl impurity concentration decreased to ∼ 2% in the epitaxially grown NbN thin films, which facilitated the epitaxial growth of NbN thin films on the MgO substrate. The origin was attributed to a residual strain at the NbN/MgO interface, which induced a bond length change in Nb-N-Cl. The bond length change may promote Cl desorption during NbN ALD because an in-plane compressive strain in the NbN film and an in-plane tensile strain in the MgO surface were observed. Finally, the epitaxially grown NbN thin film exhibited a 50% lower resistivity than that grown with a polycrystalline phase based on the enhanced carrier mobility owing to the improved crystallinity of epitaxial NbN thin films.

Spin-polarisation measurement using NbN-insulator-ferromagnet tunnel junction with oxidized barrier

We report a two-step process for the fabrication of superconductor-insulator-normal metal tunnel junctions using NbN as the superconducting electrode and its surface oxide as the insulating tunnel barrier, and investigate its efficacy in measuring spin-polarisation of ferromagnets using the Meservey-Tedrow technique. We observe that for NbN film thickness below 10 nm, under the application of parallel magnetic field, the superconducting density of states show clear “Zeeman” splitting into spin-up and spin-down sub-bands. Tunnelling measurements on devices where ferromagnetic Co is used as the normal electrode shows that these devices can be used to measure spin polarisation of a ferromagnet at temperatures up to 1.6 K. The simplicity of our fabrication process makes NbN a very attractive candidate for spin polarisation measurements. Some limitations of this process are also discussed.

Study of morphological, physical and mechanical properties of thin NbN films synthesized via DC magnetron sputtering system

PurposeNiobium Nitride (NbN) was interesting material for its applications in the medicinal tools or tools field (corresponding to saline serum media) as well as in mechanical properties. The aim of this work was depositing NbN thin films on two types of substrates (stainless steel (SS304) and silicon (100)) using plasma technique at varied powers (100–150 W).Design/methodology/approachDC magnetron sputtering technique at different powers were used to synthesis NbN films. Film structure was studied using X-ray diffraction (XRD) pattern. Rutherford elastic backscattering and energy dispersive X-ray were used to examine the deposited film composition. The films morphology was studied via atomic force microscopy and scanning electron microscopy images. Corrosion resistance of the three NbN/SS304 films was studied in 0.9% NaCl environment (physiological standard saline).FindingsAll properties could be controlled by the modification of DC power, where the crystallinity of samples was changed and consequently the corrosion and microhardness were modified, which correlated with the power. NbN film deposited at higher power (150 W) has shown better corrosion resistance (0.9% NaCl), which had smaller grain size (smoother) and was thicker.Originality/valueThe NbN films have a preferred orientation (111) matching to cubic structure phase. Corrosion resistance was enhanced for the NbN films compared to SS304 substrates (noncoating). Therefore, NbN films deposited on SS304 substrate could be applied as medicinal tools as well as in mechanical fields.

On-Chip Time-Domain Terahertz Spectroscopy of Superconducting Films below the Diffraction Limit.

Free-space time domain THz spectroscopy accesses electrodynamic responses in a frequency regime ideally matched to interacting condensed matter systems. However, THz spectroscopy is challenging when samples are physically smaller than the diffraction limit of ∼0.5 mm, as is typical, for example, in van der Waals materials and heterostructures. Here, we present an on-chip, time-domain THz spectrometer based on semiconducting photoconductive switches with a bandwidth of 200 to 750 GHz. We measure the optical conductivity of a 7.5-μm wide NbN film across the superconducting transition, demonstrating spectroscopic signatures of the superconducting gap in a sample smaller than 2% of the Rayleigh diffraction limit. Our spectrometer features an interchangeable sample architecture, making it ideal for probing superconductivity, magnetism, and charge order in strongly correlated van der Waals materials.

Alternative surface reaction route in the atomic layer deposition of NbN thin films for reduced resistivity

Transition metal nitride thin films such as TiN are necessary as conducting electrodes in memory and transistor devices. Due to their high work function (> 4.7 eV), NbN thin films have recently attracted attention to replace TiN thin films as capacitor electrodes using atomic layer deposition (ALD) process in dynamic random access memories (DRAMs) to reduce leakage currents in the capacitors. Unfortunately, the NbN ALD process using NbCl5 and NH3 as the Nb precursor and nitrogen source resulted in a high resistivity (> 500 μΩ·cm) despite its low bulk resistivity (∼10 μΩ·cm at 300 K) because of the residual Cl impurity (> 5%) within the NbN film. In this study, an alternative ALD surface reaction pathway is proposed by introducing H2S gas pulses between the NbCl5 and NH3 pulse steps to lower the Cl impurity concentration. Using the alternative ALD reaction, the residual Cl concentration was reduced below 1.5% (decrease by > 50%) at the specific ALD deposition temperature of 673 K. Finally, this reaction produced a greater decrease in the resistivity (> 30%) of NbN thin films than the conventional NbN ALD at 673 K.

Evidence of the disorder-independent electron-phonon scattering time in thin NbN films

We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Regel parameter from 6.3 to 1.6 is accompanied by a decrease in the critical temperature $T_c$ from 11.5 K to 3.4 K. By measuring magnetoconductance in the range from $T_c$ to $\sim3T_c$, we extract the inelastic scattering rates of electrons, including electron-phonon (e-ph) scattering rates $\tau_{e-ph}^{-1}$. We observe that $\tau_{e-ph}^{-1}$ and their temperature dependencies are insensitive to disorder that is not described by the existing models of the e-ph scattering in disordered metals and can be due to the presence of weakly disordered metal grains. As the temperature decreases the temperature dependence $\tau_{e-ph}^{-1}$ changes from $T^3$ to $T^2$, which can be result of a decrease in the dimension of the phonons involved in the e-ph scattering. The obtained values of material parameters of ultrathin NbN films can be useful for optimization of performance of NbN-based electronic devices.

Investigation of the Pauli paramagnetic effect in systematically tuned NbN thin films

Superconductivity and the normal-state properties of NbN films can be tuned in a wide range, supplying a suitable platform to investigate the systematical evolution of the superconducting performances. Herein, we report the upper critical field of NbN films in both the vertical (B⊥ film) and parallel (B∥ film) orientations over a wide temperature range. Eight samples with the superconducting critical temperature Tc ranging from 2.5 K to 9.8 K are studied. It is found that the magnitudes of the upper critical field in the parallel direction (Bc2∥) exceeds the paramagnetic limiting field Bp in the zero-temperature limit, while the perpendicular one (Bc2⊥) is closely approaching Bp. The temperature dependent Bc2⊥ can be described by the extended Werthamer–Helfand–Hohenberg (WHH) model considering the Pauli spin paramagnetism. Meanwhile, the Bc2∥−T data shows the feature of two-dimensional superconductivity in the temperature range near Tc. Our results show that the Pauli paramagnetic effect is greatly enhanced with the decrease of Tc. The evolution of the obtained Maki parameter with other parameters are discussed to reveal the characteristics of the Pauli paramagnetic effect in this system.