Using the first-principles calculation method, we have studied the electronic structure characteristics of monolayer, bilayer and trilayer NbxW1-xSe2 alloy structures with different concentrations of Nb at different supercell sizes. These alloy materials are formed by replacing one W atom with a Nb atom in supercells of layered two-dimensional (2D) WSe2 structure. Critical values of x in NbxW1-xSe2 were obtained to realize the transition from metal to semiconductor in monolayer, bilayer and trilayer alloy structures. Our results indicate that the transition metal dichalcogenides (TMDs), represented by WSe2, can retain semiconducting feature with increasing number of layers by means of concentration regulation under much lower doping of group-VB metal atoms represented by Nb. This doping approach opens up more possibilities for studying doping effects of layered materials with adjustable structure and properties.
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