Nanowire Sidewalls Research Articles

Diffusion-Induced Ordered Nanowire Growth: Mask Patterning Insights.

Innovative methods for substrate patterning provide intriguing possibilities for the development of devices based on ordered arrays of semiconductor nanowires. Control over the nanostructures' morphology in situ can be obtained via extensive theoretical studies of their formation. In this paper, we carry out an investigation of the ordered nanowires' formation kinetics depending on the growth mask geometry. Diffusion equations for the growth species on both substrate and nanowire sidewalls depending on the spacing arrangement of the nanostructures and deposition rate are considered. The value of the pitch corresponding to the maximum diffusion flux from the substrate is obtained. The latter is assumed to be the optimum in terms of the nanowire elongation rate. Further study of the adatom kinetics demonstrates that the temporal dependence of a nanowire's length is strongly affected by the ratio of the adatom's diffusion length on the substrate and sidewalls, providing insights into the proper choice of a growth wafer. The developed model allows for customization of the growth protocols and estimation of the important diffusion parameters of the growth species.

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices.

The growth kinetics of vertical III-V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidewalls to the top sustains a superlinear growth regime. In this work, we report on the growth of different GaAs nanostructures by selective area MOVPE on GaAs (111)B substrates. We show that the opening dimensions and geometry qualitatively alter the morphology and height evolution of the structures. We compare the time evolution of vertical GaAs NWs stemming from circular holes and horizontal GaAs nanomembranes (NMs) growing from one-dimensional (1D) rectangular slits on the same substrate. While NW heights grow exponentially with time, NMs surprisingly exhibit sublinear kinetics. The absence of visible atomic steps on the top facets of both NWs and NMs suggests layer-by-layer growth in the mononuclear mode. We interpret these observations within a self-consistent growth model, which links the diffusion flux of Ga adatoms to the position- and shape-dependent nucleation rate on top of NWs and NMs. Specifically, the island nucleation rate is lower on top of the NMs than that on the NWs, resulting in the total diffusion flux being directed from the top facet to the sidewalls. This gives a sublinear height evolution for the NMs. These results open innovative perspectives for shape engineering of III-V nanostructures and new avenues for the design of optoelectronics and photonic devices.

(Invited) Ultrathin Gap Nanoantenna: Crystal Phase Transitions and Luminescent Properties

We report Te-doped GaP nanowires (NWs) with positive tapering and radii measuring as low as 5 nm grown by the self-assisted vapor-liquid-solid mechanism using selective-area molecular beam epitaxy. The occurrence of the ultrathin nanoantenna showed a dependence on pattern pitch (separation between NWs) with a predominance at 600 nm pitch, and exhibited radius oscillations that correlate with polytypic zincblende/wurtzite segments. A growth model explains the positive tapering of the NW leading to an ultrathin tip from the suppression of surface diffusion of Ga adatoms on the NW sidewalls by Te dopant flux. The model also provides a relationship between the radius modulations and the oscillations of the droplet contact angle, predicting the quasi-periodic radius oscillations and corresponding crystal phase transitions. The GaP NWs showed strong low temperature micro-photoluminescence exciton-related emission, indicating a bandgap difference between the zincblende/wurtzite segments, with phonon replicas due to the transverse optical phonon mode. These results establish a link between dopants and the ability to control NW morphology, crystal phase and luminescent properties with possible applications in thermoelectrics, quantum emitters and photodetectors.

Strain-induced modulation of the band structure of GaAs/GaSb/GaAs core-dual-shell nanowires

The amalgamation of high-strained core/shell geometries in nanowire (NW) heterostructures with bandgap engineering enables the systems with novel transport and optical properties. Herein, the lattice-mismatch-high construction GaAs/GaSb/GaAs core-dual-shell (CDS) NWs were grown by molecular beam epitaxy (MBE), with a focus on exploring the impact of strain on their bandgap characteristics. Interestingly, the high stain between GaSb and GaAs leads to the surface roughening that favors Stranski-Krastanov (SK) mode growth, and coherent GaSb islands on GaAs NWs form plastically relaxed mounds at the edges of the NW sidewall facets. Strain properties of GaAs/GaSb/GaAs CDS NWs have been investigated systematically by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and Raman spectra. It is clearly revealed that the presence of different strains, with the strain diminished of GaSb shell layer in the large-scale NWs and amplified in the small-scale NWs. The optical properties of the GaAs/GaSb/GaAs CDS NWs were investigated by power- and temperature-dependent photoluminescence (PL) measurements, which reveal the emission properties with the exciton localization phenomenon. Our results on the unique optical properties of localized excitons in GaAs/GaSb/GaAs core-shell nanostructures open the way to the design of stable optoelectronic devices.

New growth mechanism of InAs-GaSb core-shell nanowires with polygonal triangular pyramids and quantum dots grown by MOCVD

In this paper, new growth mechanism of InAs/GaSb heterojunction nanowires grown by MOCVD has been investigated. A spear-shaped structure was firstly formed at the top of nanowires and GaAsSb quantum dots were firstly grown on the side walls of the nanowires by self-catalyzed mode. It is found that the length of InAs-GaSb nanowires in core-shell structure plays an important role in the formation of polygonal triangular pyramids and quantum dots structures. The shorter InAs nanowires become, the larger the polygonal triangular pyramid will be formed while the longer InAs nanowires become, the smaller the polygonal triangular pyramid will be formed, and quantum dots will appear on the side walls of nanowires. This new mechanism and growth technology will be conducive to the preparation of quantum dots attached to the surface of nanowires.

Deep-reactive ion etching of silicon nanowire arrays at cryogenic temperatures

The pursuit of sculpting materials at increasingly smaller and deeper scales remains a persistent subject in the field of micro- and nanofabrication. Anisotropic deep-reactive ion etching of silicon at cryogenic temperatures (cryo-DRIE) was investigated for fabricating arrays of vertically aligned Si nanowires (NWs) of a large range of dimensions from micrometers down to 30 nm in diameter, combined with commonly used wafer-scale lithography techniques based on optical, electron-beam, nanoimprint, and nanosphere/colloidal masking. Large selectivity of ∼100 to 120 and almost 700 was found with resists and chromium hard masks, respectively. This remarkable selectivity enables the successful transfer of patterned geometries while preserving spatial resolution to a significant extent. Depending on the requirements by applications, various shapes, profiles, and aspect ratios were achieved by varying process parameters synchronously or asynchronously. High aspect ratios of up to 100 comparable to the best result by metal-assisted wet-chemical etching and sub-μm trenches by DRIE were obtained with NW diameter of 200 nm, at an etch rate of ∼4 μm/min without being collapsed. At the same time, low surface roughness values were maintained on the NW top, sidewall, and bottom surface of ∼0.3, ∼13, and ∼2 nm, respectively, as well as high pattern fidelity and integrity, which were measured using angle-resolved Fourier microscopy, combined atomic force, and scanning electron microscopy on selected NWs. This work establishes the foundation in the controllable development of Si nanoarchitectures, especially at sub-100 nm structures, for energy-harvesting and storage, damage-free optoelectronics, quantum, photovoltaics, and biomedical devices.

Significance of the Different Exposed Surfaces of ZnO Single Crystals and Nanowires on the Photocatalytic Activity and Processes

The heterogeneous photocatalysis of organic dyes using ZnO nanowires (NWs) is of high interest to face the challenge of eco‐efficient water remediation. However, the effects of the wurtzite structure of ZnO and hence of the shape of nanostructures on the photocatalytic processes are still under debate. Herein, it is shown that the photocatalytic activity of ZnO single crystals with five different orientations follows a pseudo‐first‐order kinetics as: () < {} < {} < {} < (). The photocatalytic processes are independent of the nature of the crystallographic planes, apart from the semipolar {} orientation. Interestingly, ZnO NWs exhibit a photocatalytic activity that is relatively independent of their length, which is neither due to the penetration of organic dyes nor to the penetration of UV light. Instead, the sidewalls of ZnO NWs are much less efficient than the ZnO single crystal with the same nonpolar m‐plane orientation, indicating that the structural morphology and chemical composition of the surface, as well as their much higher doping level, govern the photocatalytic activity and processes. These findings indicate that the increase in the photocatalytic activity of ZnO NWs should be addressed by designing more active surfaces rather than simply increasing their total surface area.

Axially lattice-matched wurtzite/rock-salt GaAs/Pb1−xSnxTe nanowires

We investigate the full and half-shells of Pb1−xSnxTe topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV–VI shell with respect to the III–V core the lattice mismatch between both materials along the nanowire axis is less than 4%. The Pb1−xSnxTe solid solution is chosen due to the topological crystalline insulator properties above some critical concentrations of Sn (x ≥ 0.36). The IV–VI shells are grown with different compositions spanning from binary SnTe, through Pb1−xSnxTe with decreasing x value down to binary PbTe (x = 0). The samples are analysed by scanning transmission electron microscopy, which reveals the presence of (110) or (100) oriented binary PbTe and (100) Pb1−xSnxTe on the sidewalls of wurtzite GaAs NWs.

Customizing dumbbell-shaped heterostructured artificial photosystems steering versatile photoredox catalysis.

Benefiting from their excellent light-capturing ability, suitable energy band structure and abundant active sites, transition metal chalcogenides (TMCs) have been attracting widespread attention in heterogeneous photocatalysis. Nonetheless, TMCs still suffer from sluggish charge transfer kinetics, a rapid charge recombination rate and poor stability, rendering the construction of high-performance artificial photosystems challenging. Here, a ternary dumbbell-shaped CdS/MoS2/CuS heterostructure with spatially separated catalytically active sites has been elaborately designed. In such a heterostructured nanoarchitecture, MoS2 clusters, selectively grown on both ends of the CdS nanowires (NWs), act as terminal electron collectors, while CuS nanolayers, coated on the sidewalls of CdS NWs through ion exchange, form a P-N heterojunction with the CdS NW framework, which accelerates the migration of holes from CdS to CuS, effectively suppressing the oxidation of sulfide ions and improving the stability of CdS NWs. The well-defined dumbbell-shaped CdS/MoS2/CuS ternary heterostructure provides a structural basis for spatially precise regulation of the charge migration pathway, where photogenerated electrons and holes directionally migrate to the MoS2 and CuS catalytic sites, respectively, ultimately achieving efficient carrier separation and significantly enhancing photoactivity for both photocatalytic hydrogen generation and selective organic transformation under visible light. Moreover, we have also ascertained that such ion exchange and interface configuration engineering strategies are universal. Our work features a simple yet efficient strategy for smartly designing multi-component heterostructures to precisely modulate spatially vectorial charge separation at the nanoscale for solar-to-hydrogen conversion.

Simultaneous H2 fuel evolution and value-added organic transformation from a one-dimensional noble-metal-free photocatalyst with spatially separated catalytic sites

Replacing the sluggish O2-producing half-reaction with value-added organic oxidations in water photolysis systems is deemed more practical to generate H2 fuels. While loading of dual cocatalysts for both half-reactions onto nanoscale photocatalysts is highly beneficial for photocatalysis, developing such nanomaterials that are low-cost, stable and easy-to-synthesize remains challenging. Here, noble-metal-free CdS-Co3O4-NiSx nanodumbbells with spatially separated half-reaction sites are designed to simultaneously generate H2 and oxidize benzylamine without any sacrificial agent. In this nanoarchitecture, electron-collecting NiSx and hole-collecting Co3O4 are anchored at the tips and sidewall of CdS nanowires, respectively, to lower the proton reduction and benzylamine oxidation energy barriers, respectively, thus establishing a dual-functional photocatalytic redox system. With significantly promoted charge separation and half-reaction kinetics, the nanodumbbells can produce H2 (47 mmol∙g−1∙h−1) ca. 70 times faster than pure CdS, along with simultaneous benzylamine oxidation. Our findings provide a viable one-dimensional photocatalyst design strategy for various coupled half-reactions.

Efficiency enhancement of GaAs nanowire array-based solar cell by plasmonic Al nanoparticles

Gallium arsenide (GaAs) nanowire (NW) solar cells (SCs) have piqued the interest of researchers because they exhibit superior light-harvesting and anti-reflection properties along with reduced material consumption compared to their planar counterparts. However, the high surface-to-volume ratio associated with these NWs degrades their performance in practical applications. Light trapping is considered one of the most crucial parameters for producing low-cost high-efficiency NW-SCs. Thus, numerous light-trapping strategies have been explored, among which surface plasmon resonance (SPR) based optical absorption enhancement using metal nanoparticles (NPs) has emerged as a potential method. The role of plasmonic aluminum (Al) NPs in the efficiency enhancement of GaAs NW SC has not yet been explored. Therefore, in this study, a vertically aligned GaAs NW SC structure incorporated with Al NPs has been investigated using the finite-difference time-domain (FDTD) method. The sidewalls of GaAs NWs are embellished with uniformly arranged Al NPs with diameters ranging from 30 to 60 nm. The excitation of localized surface plasmon resonance in metal NPs results in significant light absorption enhancement at the GaAs near-band of the proposed structure. The results demonstrate that even with a low aspect ratio (D/P) of 0.3, optimizing the geometrical parameters of the NPs results in a 41.96 % increase in power conversion efficiency (PCE) and a 45 % increase in absorption efficiency at 800 nm for the proposed structure when compared to the bare structure. Hence, our suggested structure which utilizes the light-trapping mechanism of Al NPs proves to be a cost-effective and promising material combination for high-efficiency nanoscale SCs.

Growth of branched nanowires via solution-based Au seed particle deposition

Nanowires offer unprecedented flexibility as nanoscale building blocks for future optoelectronic devices, especially with respect to nanowire solar cells and light-emitting diodes. A relatively new concept is that of charge carrier diffusion-induced light-emitting diodes, for which nanowires offer an interesting architecture by use of particle-assisted core-branch growth. The branches should be homogenously distributed along the cores. However, most deposition techniques, such as aerosol particle deposition, mainly yield particles at the nanowire tips for dense nanowire arrays. In this study, we demonstrate a liquid-based approach for homogeneously distributed formation of catalytic Au particles on the core nanowire sidewalls which is cost and time-efficient. Subsequently, we demonstrate the synthesis of dispersed nanowire branches. We show that by changing the deposition parameters, we can tune the number of branches, their dimensions, and their growth direction.

Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arrays

Abstract To light emitting diodes (LEDs), solving the common non-uniform current injection and efficiency degradation issues in (0001) plane micro-LED is essential. Herein, we investigated the light emission characteristics of various mesa sizes and different p-electrode areas toward the realization of coaxial GaInN/GaN multi-quantum-shell (MQS) nanowires (NWs)-based micro-LEDs. As the mesa area was reduced, the current leakage decreases, and further reduction of the area showed a possibility of realizing micro-LED with less current leakage. The large leakage path is mainly associated with the defective MQS structure on the (0001) plane area of each NW. Therefore, more NWs involved in an LED chip will induce higher reverse leakage. The current density-light output density characteristics showed considerably increased electroluminescence (EL) intensity as the mesa area decreased, owing to the promoted current injection into the efficient NW sidewalls under high current density. The samples with a mesa area of 50 × 50 µm2 showed 1.68 times higher light output density than an area of 100 × 100 µm2 under a current density of 1000 A/cm2. In particular, the emission from (1-101) and (10-10) planes did not exhibit an apparent peak shift caused by the quantum-confined Stark effect. Furthermore, by enlarging the p-electrode area, current can be uniformly injected into the entire chip with a trade-off of effective injection to the sidewall of each NW. High performance of the MQS NW-based micro-LED can be expected because of the mitigated efficiency degradation with a reducing mesa area and an optimal dimension of p-electrode.

Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets

Hydrogen exposure and annealing at 400 °C leads to a layer-by-layer etching of the n-doped GaAs(110) cleavage surface removing islands and forming preferentially step edge sections with [001] normal vector. In addition, a large density of negatively charged point defects is formed, leading to a Fermi level pinning in the lower part of the bandgap. Their charge transfer level is in line with that of Ga vacancies only, suggesting that adatoms desorb preferentially due to hydrogen bonding and subsequent Ga–H desorption. The results obtained on cleavage surfaces imply that the morphology of nanowire sidewall facets obtained by hydrogen cleaning is that of an etched surface, but not of the initial growth surface. Likewise, the hydrogen-cleaned etched surface does not reveal the intrinsic electronic properties of the initially grown nanowires.

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

We report on the selective area growth (SAG) of GaAs nanowires (NWs) by the catalyst-free vapor-solid mechanism. Well-ordered GaAs NWs were grown on GaAs(111)B substrates patterned with a dielectric mask using hydride vapor phase epitaxy (HVPE). GaAs NWs were grown along the ⟨111⟩B direction with perfect hexagonal shape when the hole’s opening diameter in SiNx or SiOx mask was varied from 80 to 340 nm. The impact of growth conditions and the hole size on the NW lengths and growth rates was investigated. A saturation of the NW lengths was observed at high partial pressures of As4, explained by the presence of As trimers on the (111)B surface at the NW top surface. By decreasing As4 partial pressure and decreasing the hole size, high aspect ratio NWs were obtained. The longest and thinnest NWs grew faster than a two-dimensional layer under the same conditions, which strongly suggests that surface diffusion of Ga adatoms from the NW sidewalls to their top contributes to the resulting axial growth rate. These findings were supported by a dedicated model. The study highlights the capability of the HVPE process to grow high aspect ratio GaAs NW arrays with high selectivity.

Lattice‐Asymmetry‐Driven Selective Area Sublimation: A Promising Strategy for III‐Nitride Nanostructure Tailoring

Lattice‐asymmetry‐driven selective area sublimation (SAS) process of GaN is systemically investigated by exploring the in situ dynamic evolution of the decomposition pathway under ultra‐high vacuum. The rationale of the SAS is confirmed as a strong anisotropic decomposition driven by lattice‐asymmetry of wurtzite crystal: the sublimation preferably starts along the ‐c axis due to the relatively lower decomposition energy barrier. Finally, the fabrication of site‐ and size‐controlled GaN nanowires has been achieved by utilizing the SAS process, exhibiting good controllability on the sidewall of nanowires. These findings shed light on the thermodynamic mechanism of the lattice‐asymmetry‐driven sublimation process in III‐nitrides, providing an efficient alternative approach for the tailoring of semiconductor micro/nanostructures.

Approaching transform-limited photons from nanowire quantum dots using excitation above the band gap

We demonstrate that, even when employing above band gap excitation, photons emitted from semiconductor quantum dots can have linewidths that approach their transform-limited values. This is accomplished by using quantum dots embedded within bottom-up photonic nanowires, an approach which mitigates several potential mechanisms that can result in linewidth broadening: (i) Only a single quantum dot is present in each device, (ii) dot nucleation proceeds without the formation of a wetting layer, and (iii) the sidewalls of the photonic nanowire are comprised not of etched facets, but of epitaxially grown crystal planes. Using these structures we achieve linewidths of $2\ifmmode\times\else\texttimes\fi{}$ the transform limit for above band gap excitation. We also demonstrate a highly nonlinear dependence of the linewidth on both excitation power and temperature which can be described by an independent boson model that considers both deformation and piezoelectric exciton-phonon coupling. We find that for sufficiently low excitation powers and temperatures, the observed excess broadening is not dominated by phonon dephasing, a surprising result considering the high phonon occupation that occurs with above band gap excitation.

Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches

Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of NW ensembles requires advanced growth modeling, which is much less developed for catalyst-free NWs compared to vapor-liquid-solid (VLS) NWs of the same materials. Herein, we present an empirical approach for modeling simultaneous axial and radial growths of untapered catalyst-free III-V NWs and compare it to the rigorous approach based on the stationary diffusion equations for different populations of group III adatoms. We study in detail the step flow occurring simultaneously on the NW sidewalls and top and derive the general laws governing the evolution of NW length and radius versus the growth parameters. The rigorous approach is reduced to the empirical equations in particular cases. A good correlation of the model with the data on the growth kinetics of SAG GaAs NWs and self-induced GaN NWs obtained by different epitaxy techniques is demonstrated. Overall, the developed theory provides a basis for the growth modeling of catalyst-free NWs and can be further extended to more complex NW morphologies.

Core-shell GaN/AlGaN nanowires grown by selective area epitaxy.

GaN/AlGaN core-shell nanowires with various Al compositions have been grown on GaN nanowire array using selective area metal organic chemical vapor deposition technique. Growth of the AlGaN shell using pure N2 carrier gas resulted in a smooth surface for the nonpolar m-plane sidewalls with superior optical properties, whereas, growth using a mixed N2/H2 carrier gas resulted in a striated surface similar to the commonly observed morphology in the growth of nonpolar III-nitrides. The Al compositions in the AlGaN shells are found to be less than the gas phase input ratio. The systematic reduction in efficiency of Al incorporation in the AlGaN shells with increasing the Al molar flow in the gas phase is attributed to geometric loss, strain-limited Al incorporation, and increased gas phase parasitic reactions. Defect-related luminescence has been observed for AlGaN shells with Al content ≥ 30% and the origin of the defect luminescence has been determined as the (VIII-2ON)1- complex. Microstructural analysis of the AlGaN shells revealed that the dominant defects are partial dislocations. Growth of the nonpolar m-plane AlxGa1-xN/AlyGa1-yN quantum wells on the sidewalls of the GaN nanowires produced arrays with excellent morphology and optical emission, which demonstrated the viability of such a growth scheme for large area efficient ultraviolet LEDs as well as for next generation ultraviolet micro-LEDs.

Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy

GaN nanostructures are promising for a broad range of applications due to their 3D structure, thereby exposing non-polar crystal surfaces. The nature of the exposed crystal facets, i.e., whether they are a-, m-plane, or of mixed orientation, impacts the stability and performance of GaN nanostructure-based devices. In this context, it is of great interest to control the formation of well-defined side facets. Here, we show that we can control the crystal facet formation at the nanowire sidewalls by tuning the III–V ratio during selective area growth by molecular beam epitaxy. Especially, the N flux serves as a tool for controlling the growth kinetics. In addition, we demonstrate the growth of GaN nanofins with either a- or m-plane side facets. Based on our observations, we present the underlying nanostructure growth mechanisms. Low temperature photoluminescence measurements show a correlation of the formation of structural defects like stacking faults with the growth kinetics. This article demonstrates the controlled selective epitaxy of GaN nanostructures with defined crystal side facets on large-scale available AlN substrates.