Lattice‐Asymmetry‐Driven Selective Area Sublimation: A Promising Strategy for III‐Nitride Nanostructure Tailoring

Abstract

Lattice‐asymmetry‐driven selective area sublimation (SAS) process of GaN is systemically investigated by exploring the in situ dynamic evolution of the decomposition pathway under ultra‐high vacuum. The rationale of the SAS is confirmed as a strong anisotropic decomposition driven by lattice‐asymmetry of wurtzite crystal: the sublimation preferably starts along the ‐c axis due to the relatively lower decomposition energy barrier. Finally, the fabrication of site‐ and size‐controlled GaN nanowires has been achieved by utilizing the SAS process, exhibiting good controllability on the sidewall of nanowires. These findings shed light on the thermodynamic mechanism of the lattice‐asymmetry‐driven sublimation process in III‐nitrides, providing an efficient alternative approach for the tailoring of semiconductor micro/nanostructures.