Nanowire Section Research Articles

3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors.

Interconnected magnetic nanowire (NW) networks offer a promising platform for three-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire networks driven by magnetic field and current, manifested in distinct magnetoresistance (MR) features. In these networks, when only a few interconnected NWs were measured, multiple MR kinks and local minima were observed, including a significant minimum at a positive field during the descending field sweep. Micromagnetic simulations showed that this unusual feature was due to domain wall (DW) pinning at the NW intersections, which was confirmed by off-axis electron holography imaging. In a complex network with many intersections, sequential switching of nanowire sections separated by interconnects was observed, along with stochastic characteristics. The pinning/depinning of the DWs can be further controlled by the driving current density. These results illustrate the promise of such interconnected networks as integrated multistate memristors.

Top-down integration of suspended N+/P/N+ silicon-nanowire-based ion-sensitive field effect transistors for pH analysis at the submicronic scale

A technological process was proposed in order to integrate fully silicon-nanowire-based field-effect nanodevices on a silicon-on-insulator (SOI) substrate. Thanks to a double reactive ion etching process of the SOI silicon upper layer as well as to a "SiO2 thermal oxidation growth / Al2O3 atomic layer deposition" gate process, silicon-nanowire-based field-effect transistors (SiNW-FET) and silicon-nanowire-based ion-sensitive field-effect transistors (SiNW-ISFET) were fabricated. Focuses were brought on (i) the integration of a suspended N+/P/N+ double-junction structure (gate length: ∼ 0.75 μm and ∼ 3.75 μm), (ii) the fabrication of a SiO2/Al2O3 all-around surrounding gate structure, (iii) the achievement of low nanowire sections (width: ∼ 150 nm, height: ∼ 200 nm), and (iv) the final adaptation to the liquid phase analysis thanks to SU8-based wafer-level packaging. According to the proposed process, SiNW-FET and SiNW-ISFET devices showed excellent electrical characteristics in terms of leakage resistance ROFF, subthreshold current slope and ION/IOFF maximal ratio. SiNW-ISFET devices were finally studied for the pH analysis at the submicronic scale (analysed volumes: ∼ 10 pL), evidencing standard potentiometric detection sensitivity (∼ 56 mV/pH), as well as excellent amperometric detection sensitivity (∼ 0.4 current decade per pH) in subthreshold regime.

Structural analysis and stable length of Au induced nanowires on Ge(001)

The structure of self-organized Au induced nanowires on Ge (001) has been investigated by scanning tunneling microscopy (STM). Interruptions within the nanowires yield nanowire sections with preferred length of about 4, 10 and 16 times the length of the unit cell of 0.4 nm. Occupied state STM images of these sections reveal internal structures which exhibit the respective number of height maxima within the sections. The arrangement of the four maxima within the shortest section is “s” shaped or mirrored “s” shaped. The orientation correlates with the position of protrusions located at neighboring wires. The s-shaped arrangement of four maxima occurs also within the longer sections. The respective arrangements of the maxima within the nanowire sections appear in two chiral forms equally frequent.

Spatial magnetic imaging of non-axially symmetric vortex domains in cylindrical nanowire by transmission X-ray microscopy.

The spatial magnetization texture of a cylindrical nanowire has been determined by Transmission X-ray Microscopy (TXM) and X-ray magnetic circular dichroism (XMCD). For this purpose, nanowires with designed geometry, consisting of CoNi/Ni periodic segments, have been grown by designed electrodeposition into alumina templates. Experimental data allow one to conclude the presence of mono- and trivortex magnetic domains in CoNi segments but, unusually, these states are characterized by an asymmetric XMCD contrast across the nanowire's section. Micromagnetic modelling shows non-trivial three-dimensional structures with ellipsoidal vortex cores and non-axially symmetric magnetization along the nanowire direction. The modelled TXM contrast of micromagnetic structures allows to correlate the experimental asymmetric XMCD contrast to the easy axis direction of the uniaxial magnetocrystalline anisotropy.

Initial Design of a W-Band Superconducting Kinetic Inductance Qubit

Superconducting qubits are widely used in quantum computing research and industry. We describe a superconducting kinetic inductance qubit (and introduce the term Kineticon to describe it) operating at W-band frequencies with a nonlinear nanowire section that provides the anharmonicity required for two distinct quantum energy states. Operating the qubits at higher frequencies may relax the dilution refrigerator temperature requirements for these devices and paves the path for multiplexing a large number of qubits. Millimeter-wave operation requires superconductors with relatively high $T_c$, which implies high gap frequency, 2$\Delta/h$, beyond which photons break Cooper pairs. For example, NbTiN with $T_c =15\,\text{K}$ has a gap frequency near 1.4 THz, which is much higher than that of aluminum (90 GHz), allowing for operation throughout the millimeter-wave band. Here we describe a design and simulation of a W-band Kineticon qubit embedded in a 3-D cavity. We perform classical electromagnetic calculations of the resulting field distributions.

Enhancing the performance of superconducting nanowire-based detectors with high-filling factor by using variable thickness

Current crowding at bends of superconducting nanowire single-photon detector (SNSPD) is one of the main factors limiting the performance of meander-style detectors with large filling factors. In this paper, we propose a new concept to reduce the influence of the current crowding effect, a so-called variable thickness SNSPD, which is composed of two regions with different thicknesses. A larger thickness of bends in comparison to the thickness of straight nanowire sections locally reduces the current density and reduces the suppression of the critical current caused by current crowding. This allows variable thickness SNSPD to have a higher critical current, an improved detection efficiency, and decreased dark count rate in comparison with a standard uniform thickness SNSPD with an identical geometry and film quality.

Nanowire-assisted microcavity in a photonic crystal waveguide and the enabled high-efficiency optical frequency conversions

We report an indium phosphide nanowire (NW)-induced cavity in a silicon planar photonic crystal (PPC) waveguide to improve the light–NW coupling. The integration of NW shifts the transmission band of the PPC waveguide into the mode gap of the bare waveguide, which gives rise to a microcavity located on the NW section. Resonant modes with Q factors exceeding 10 3 are obtained. Leveraging on the high density of the electric field in the microcavity, the light–NW interaction is enhanced strongly for efficient nonlinear frequency conversion. Second-harmonic generation and sum-frequency generation in the NW are realized with a continuous-wave pump laser in a power level of tens of microwatts, showing a cavity-enhancement factor of 112. The hybrid integration structure of NW-PPC waveguide and the self-formed microcavity not only opens a simple strategy to effectively enhance light–NW interactions, but also provides a compact platform to construct NW-based on-chip active devices.

Interaction induced hybridization of Majorana zero modes in a coupled quantum-dot–superconducting-nanowire hybrid system

We study the low-energy transport properties of a hybrid device composed by a native quantum dot coupled to both ends of a topological superconducting nanowire section hosting Majorana zero-modes. The account of the coupling between the dot and the farthest Majorana zero-mode allows to introduce the topological quality factor, characterizing the level of topological protection in the system. We demonstrate that Coulomb interaction between the dot and the topological superconducting section leads to the onset of the additional overlap of the wavefunctions describing the Majorana zero-modes, leading to the formation of trivial Andreev bound states even for spatially well-separated Majoranas. This leads to the spoiling of the quality factor and introduces a constraint for the braiding process required to perform topological quantum computing operations.

All-Optical Mapping of the Position of Quantum Dots Embedded in a Nanowire Antenna.

Nanowire antennas embedding single quantum dots (QDs) have recently emerged as a versatile solid-state platform for quantum optics. Within the nanowire section, the emitter position simultaneously determines the strength of the light-matter interaction, as well as the coupling to potential decoherence channels. Therefore, to quantitatively understand device performance and guide future optimization, it is highly desirable to map the emitter position with an accuracy much smaller than the waveguide diameter, on the order of a few hundreds of nanometers. We introduce here a nondestructive, all-optical mapping technique that exploits the QD emission into two guided modes with different transverse profiles. These two modes are fed by the same emitter and thus interfere. The resulting intensity pattern, which is highly sensitive to the emitter position, is resolved in the far-field using Fourier microscopy. We demonstrate this technique on a standard microphotoluminescence setup and map the position of individual QDs in a nanowire antenna with a spatial resolution of ±10 nm. This work opens important perspectives for the future development of light-matter interfaces based on nanowire antennas. Beyond single-QD devices, it will also provide a valuable tool for the investigation of collective effects that imply several emitters coupled to an optical waveguide.

Buckling of nanowires: a continuum model with a transition parameter

In this work, a continuum model with a transition parameter for the buckling of nanowires is presented. The present model is developed by means of the principle of virtual displacement within the framework of continuum mechanics. A transition parameter characterizing the directions of the axial loads on the cross sections of buckled nanowires is introduced. The critical buckling loads (CBLs) of the nanowires with simply supported, clamped-clamped and clamped-free end conditions are derived from the present model. The present model is validated via comparisons with the results available in the literature. Numerical results reveal that the transition parameter plays an important role in the determination of CBLs, which is related to the end conditions and cross-sectional shapes of nanowires. The differences in the magnitudes of CBLs corresponding to two extreme values of the transition parameter may reach up to 13.8% for clamped-clamped nanowires. The comparison between the CBLs from the present model and molecular dynamics simulation shows that the present model may predict more reliable CBLs than the existing continuum models do. The present solutions could therefore serve as the benchmarks with the lower and upper bounds. The modeling methodology in this work holds a promise for the theoretical study on the buckling of nanotubes and nanoplates.

Universality of thermal transport in amorphous nanowires at low temperatures

Thermal transport properties of amorphous materials at low temperatures are governed by the interaction between phonons and localized excitations referred to as tunneling two level systems (TLS). The temperature variation of the thermal conductivity of these amorphous materials is considered as universal and is characterized by a quadratic power law. This is well described by the phenomenological TLS model even though its microscopic explanation is still elusive. Here, by scaling down to the nanometer scale amorphous systems much below the bulk phonon-TLS mean free path, we probed the robustness of that model in restricted geometry systems. Using very sensitive thermal conductance measurements, we demonstrate that the temperature dependence of the thermal conductance of silicon nitride nanostructures remains mostly quadratic independently of the nanowire section. It is not following the cubic power law in temperature as expected in a Casimir-Ziman regime of boundary limited thermal transport. This shows a thermal transport counter intuitively dominated by phonon-TLS interactions and not by phonon-boundary scattering in the nanowires. This could be ascribed to an unexpected high density of TLS on the surfaces which still dominates the phonon diffusion processes at low temperatures and explains why the universal quadratic temperature dependence of thermal conductance still holds for amorphous nanowires.

Single-Crystalline Gold Nanowires Synthesized from Light-Driven Oriented Attachment and Plasmon-Mediated Self-Assembly of Gold Nanorods or Nanoparticles

Through the light-driven geometrically oriented attachment (OA) and self-assembly of Au nanorods (NRs) or nanoparticles (NPs), single-crystalline Au nanowires (NWs) were synthesized by the irradiation of a linearly-polarized (LP) laser. The process was conducted in a droplet of Au colloid on a glass irradiated by LP near-infrared (e.g. 1064 nm and 785 nm) laser beam of low power at room temperature and atmospheric pressure, without any additive. The FE-SEM images show that the cross sections of NWs are various: tetragonal, pentagonal or hexagonal. The EDS spectrum verifies the composition is Au, and the pattern of X-ray diffraction identifies the crystallinity of NWs with the facets of {111}, {200}, {220} and {311}. We proposed a hypothesis for the mechanism that the primary building units are aligned and coalesced by the plasmon-mediated optical torque and force to form the secondary building units. Subsequently, the secondary building units undergo the next self-assembly, and so forth the tertiary ones. The LP light guides the translational and rotational motions of these building units to perform geometrically OA in the side-by-side, end-to-end and T-shaped manners. Consequently, micron-sized ordered mesocrystals are produced. Additionally, the concomitant plasmonic heating causes the annealing for recrystallizing the mesocrystals in water.

Phase purification of GaAs nanowires by prolonging the growth duration in MBE

Single-phase nanowire sections are observed by prolonging the growth duration of GaAs nanowires.

Coupled, Simultaneous Displacement and Dealloying Reactions into Fe-Ni-Co Nanowires for Thinning Nanowire Segments.

A new methodology is reported to shape template-assisted electrodeposition of Fe-rich, Fe-Ni-Co nanowires to have a thin nanowire segment using a coupled displacement reaction with a more noble elemental ion, Cu(II), and at the same time dealloying predominantly Fe from Fe-Ni-Co by the reduction of protons (H+), followed by a subsequent etching step. The displacement/dealloyed layer was sandwiched between two trilayers of Fe-Ni-Co to facilitate the characterization of the reaction front, or penetration length. The penetration length region was found to be a function of the ratio of proton and Cu(II) concentration, and a ratio of 0.5 was found to provide the largest penetration rate, and hence the larger thinned length of the nanowire. Altering the etching time affected the diameter of the thinned region. This methodology presents a new way to thin nanowire segments connected to larger nanowire sections and also introduces a way to study the propagation of a reaction front into a nanowire.

Developing high coercivity in large diameter cobalt nanowire arrays

Regardless of the synthetic method, developing high magnetic coercivity in ferromagnetic nanowires (NWs) with large diameters has been a challenge over the past two decades. Here, we report on the synthesis of highly coercive cobalt NW arrays with diameters of 65 and 80 nm, which are embedded in porous anodic alumina templates with high-aspect-ratio pores. Using a modified electrochemical deposition method enabled us to reach room temperature coercivity and remanent ratio up to 3000 Oe and 0.70, respectively, for highly crystalline as-synthesized hcp cobalt NW arrays with a length of 8 μm. The first-order reversal curve (FORC) analysis showed the presence of both soft and hard magnetic phases along the length of the resulting NWs. To develop higher coercive fields, the length of the NWs was then gradually reduced in order from bottom to top, thereby reaching NW sections governed by the hard phase. Consequently, this resulted in record high coercivities of 4200 and 3850 Oe at NW diameters of 65 and 80 nm, respectively. In this case, the FORC diagrams confirmed a significant reduction in interactions between the magnetic phases of the remaining sections of NWs. At this stage, x-ray diffraction (XRD) and dark-field transmission electron microscopy analyses indicated the formation of highly crystalline bamboo-like sections along the [0 0 2] direction during a progressive pulse-controlled electrochemical growth of NW arrays under optimized parameters. Our results both provide new insights into the growth process, crystalline characteristics and magnetic phases along the length of large diameter NW arrays and, furthermore, develop the performance of pure 3d transition magnetic NWs.

Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires.

We report on the structural and optical properties of AlxGa(1-x)N nanowire sections grown by plasma-assisted molecular beam epitaxy on GaN nanowire bases used as a template. Based on a combination of scanning electron microscopy, microphotoluminescence, time-resolved microphotoluminescence, and photon correlation experiments, it is shown that compositional fluctuations in AlxGa(1-x)N sections associated with carrier localization optically behave as quantum dots. Moreover, most of the micro-optical properties of such fluctuations are demonstrated to be very little dependent on kinetic growth parameters such as AlxGa(1-x)N growth temperature and AlN molar fraction in the alloy, which govern the macrostructural properties of AlxGa(1-x)N sections.

Exploiting Rayleigh Instability in Creating Parallel Au Nanowires with Exotic Arrangements.

New types of nanowire arrangements are explored via active surface growth, where the use of Au seeds at room temperature means that the seed shape has major impacts on the subsequent nanowire growth. When Au nanorods are used as seeds, the original stripe-shape contact line with the substrate (the active surface) splits into a series of circular dots as the result of Rayleigh instability, giving coplanar nanowire bundles. The influence of a solid system by Rayleigh instability is exceptional, permitted by the dynamic active surface. The splitting is driven by the tendency to minimize the surface of the newly emerged nanowire section, whereas Rayleigh instability is responsible for overcoming the kinetic barriers. As a result, the average distance between the nanowires is only a few nanometers, much smaller than conventional lithographic methods. Conical and tubular bundles of nanowires are formed at low seed density, where the excessive growth material available for each seed leads to expansion and splitting of the active surface under the influence of both the diffusion limited growth and Rayleigh instability. Further designs of nanowire-based Au architectures demonstrate the feasibility of combining the multiple control of the system for new synthetic advances.

Chlorine based focused electron beam induced etching: A novel way to pattern germanium

Focused electron beam induced etching (FEBIE) with chlorine as etching agent has been used to geometrically shape and to electrically modify semiconductor nanodevices. Selected sections of monocrystalline nanowires were modified directly without the requirement for a photomask or a resist layer. FEBIE as a subtractive nanofabrication technology allows to locally etch active semiconductor devices made of Si or Ge. In this work, chlorine is used as the etchant gas to thin germanium channel structures fabricated by standard photolithography. For effective material removal a sufficiently high electron influence is essential to avoid the pitfalls of this method. Topography and conductivity of FEBIE-modified structures prior and after the etching process was studied by AFM and by electrical I–V characteristics. The presented work demonstrates the potential of Cl-based FEBIE for device prototyping and electrical trimming of future Ge-based nanodevices.

Tailoring the nucleation of domain walls along multi-segmented cylindrical nanoelements

The magnetization reversal of three-segment cylindrical nanoelements comprising alternating nanowire and nanotube sections is investigated by means of Monte Carlo simulations. Such nanoelements may feature a three-state behaviour with an intermediate plateau in the hysteresis curve due to a metastable pinning of the domain walls (DWs) at the wire-tube interfaces. It turns out that vortex as well as transverse DWs contribute to the magnetization reversal. By varying the geometric parameters, the sequence, or the material of the elements the nucleation location of DWs, as well as their nucleation field, can be tailored. Especially interesting is the novel possibility to drive DWs coherently in the same or in opposite directions by changing the geometry of the hybrid nanoelement. This important feature provides additional flexibility to the construction of logical devices based on DW movement. Another prominent outcome is that DWs can be nucleated near the centre of the element and then traverse to the outer tips of the cylindrical structure when the applied field is increased, which also opens the possibility to use these three-segment nanoelements for the field-induced delivery of DWs as substitutes for large nucleation pads.

Chirality-Based Vortex Domain-Wall Logic Gates

In planar ferromagnetic nanowires, domain walls take the form of circulating vortices of magnetism. The authors use micromagnetic simulations to show that if binary data are encoded using the two states of vortex circulation (clockwise or counterclockwise), short nanowire sections and junctions can be made to perform a full range of logic operations. This offers a novel platform for spintronic devices.