Nanostructured Thin Films Research Articles

Self-assembly plasmonic gold nanoribbons on few-layer PtSe2 under femtosecond laser irradiation

Functional two-dimensional (2D) materials have been extensively explored for a wide range of applications such as energy generation, low-power computing, and biosensing. In this work, we present an approach involving the integration of six-layer platinum diselenide (PtSe2) as an interlayer between the thin gold film and SiO2 substrate to induce spontaneous formation of plasmonic nanostructures (nanoribbons) on the upper gold film (∼8 nm) under 1030 nm femtosecond laser irradiation. The formation of periodic nanostructures is attributed to the periodic energy deposition that occurs in the PtSe2 layers under intense femtosecond laser pulses. Notably, the self-assembled gold nanostructures exhibit a distinctive polarization-dependent plasmonic response in the near-infrared spectral region and could be directly fabricated in a centimeter scale within several minutes. This straightforward method for self-assembling plasmonic nanostructures using layered materials may expand the utility of functional 2D materials and advance the cost-effective and large-area fabrication of plasmonic thin-film nanostructures in a simplified manner.

Superior photoelectrodes of nanostructured Mo-doped CuO thin film for green hydrogen generation from photoelectrochemical water-splitting

Green hydrogen has an audible echo in the clean energy field. In this piece of work, pure and Mo-doped CuO thin films were deposited at different substrate temperatures on the Indium Tin Oxide (ITO) by the DC/RF sputtering technique. The prepared samples were utilized to generate hydrogen gas within the photoelectrochemical water-splitting mechanism. Crystallographic planes (−111), and (200) were the preferred orientations for pure and Mo-doped CuO thin films. Moreover, the average crystallite size was doubled by Mo doping reaching 25.8 nm. FE-SEM microscopic image exhibits that the pure and Mo–CuO thin films have a regular distribution with a small size. The optical band gap has rosed by doping from 1.8 eV to 2.05 eV. Then, it increased to 2.3 eV and 2.4 eV at temperatures of 100 °C and 200 °C respectively. Pure and Mo–CuO thin films were applied as photocathodes for hydrogen generation with water water-splitting technique. The photoelectrochemical application revealed a photocurrent density of ∼2.25 mA/cm2 for Mo-doped CuO photoelectrode at room temperature. This optimum photoelectrode was studied for stability and electrochemical impedance. In addition, the incident photon to current efficiency (IPCE%) was 4.47 % at 500 nm. The applied bias photon to current conversion efficiency (ABPE%) was 4.25 % at −0.38V. As a result of the above, pure and Mo-doped CuO photoelectrodes are low-cost thin films and have a high-efficiency performance for green hydrogen generation industrially.

Effect of Deposition Working Power on Physical Properties of RF-Sputtered CdTe Thin Films for Photovoltaic Applications.

The main objective of this study was to determine the variation in the properties of cadmium telluride (CdTe) thin films deposited on a p-type Si substrate by the radio frequency magnetron sputtering technique at four different working powers (70 W, 80 W, 90 W, and 100 W). The substrate temperature, working pressure, and deposition time during the deposition process were kept constant at 220 °C, 0.46 Pa, and 30 min, respectively. To study the structural, morphological, and optical properties of the CdTe films grown under the mentioned experimental conditions, X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical spectroscopy were used. For a better analysis of the films' structural and optical properties, a group of films were deposited onto optical glass substrates under similar deposition conditions. The electrical characterisation of Ag/CdTe/Al "sandwich" structures was also performed using current-voltage characteristics in the dark at different temperatures. The electrical measurements allowed the identification of charge transport mechanisms through the structure. New relevant information released by the present study points towards 90 W RF power as the optimum for obtaining a high crystallinity of ~1 μm nanostructured thin films deposited onto p-Si and optical glass substrates with optical and electrical properties that are suitable for use as absorber layers. The obtained high-quality CdTe nanostructured thin films are perfectly suitable for use as absorbers in CdTe thin-film photovoltaic cells.

Improving photocatalytic performance: Creation and assessment of nanostructured SnO2 thin films, pure and with nickel doping, using spray pyrolysis

This study investigates conductive, transparent films of undoped and Ni-doped SnO2 deposited through water solvent spray pyrolysis, aiming to combat environmental water pollution. Examining these films using X-ray diffraction (XRD), Fourier transform infrared absorption microscopy (FTIR), UV–Vis spectrophotometer, and Hall effect, the research focuses on photocatalytic degradation kinetics using rhodamine B (RhB) as a model pollutant from the textile industry.XRD results confirm tetragonal structures of SnO2 and Ni: SnO2 films with crystallite sizes ranging from 21.83 to 19.52 nm. The sprayed films exhibit resistivity variations (7.1 × 10−3 to 4.5 × 10−3) Ω.cm and figure of merit variations [(1.49 × 10−4 to 25.03 × 10−4); (2.69 × 10−4 to 9.1 × 10−4)] (Ω/sq)−1. Optical properties include ∼73% light transmission, ∼20% reflection, and ∼7% absorptance, with porosity (8.65–11.44)%, refractive index (2.88–1.57), extinction coefficient (0.0043–0.0013), dielectric constants (8.31–2.48 and 0.025–0.0041), optical density [(3.9 × 10+10–7.86 × 10+09) S−1], skin depth [(2.06 × 10−3–6.7 × 10−3) cm−1], and optical band gap with Urbach energy [(3.8–3.6) eV and (0.67–0.43) eV] obtained at 550 nm.The photocatalytic process, crucial for water pollution treatment, exhibits pH sensitivity (12.3–1.7) over varied times (0–90 min) and is influenced by the SnO2 thin film elaboration method. Notably, 0.5 M-concentration SnO2 films show the most efficient photocatalytic degradation rates. This research highlights the potential of SnO2 in environmentally friendly water pollution treatment, emphasizing its practical application in addressing crucial environmental challenges.

Preparation and Study of Structural and Optical Properties of PbS:Cu Nanostructured Thin Films

Thin films of lead sulfide (PbS) and various Cu mixing ratios (30%, 50%, and 70%) are used in this work. were made using the (PLD) method on glass substrates at a wavelength of 1064 nm and 600 mj of laser energy. X-ray diffraction experiments were used to determine the structural measurements for pure PbS, and other mixes present thin films demonstrated a face-centered-cubic structure. and discovered that the average grain size was 17.74 nm; this grew to 20.54 nm after combining with 30% Cd, 20.54 nm after mixing with 50% Cd, and 23.15 nm after mixing with 70% Cd. The optical characteristics of PbS thin films measured between 300 and 1100 nm in wavelength. For PbS thin films, the optical transmittance and transparency decrease as the o mixing ratio increases.The absorption coefficient rises as the mixing ratio does. When the mixing ratio is increased, the band gap for pure PbS thin film is 2.43, rises to 3.03, and thereafter falls to 2.01 and 1.5.

Nanostructure and Optical Property Tailoring of Zinc Tin Nitride Thin Films through Phenomenological Decoupling: A Pathway to Enhanced Control.

This work addresses the need for precise control of thin film sputtering processes to enable thin film material tailoring on the example of zinc tin nitride (ZTN) thin films deposited via microwave plasma-assisted high power reactive magnetron sputtering (MAR-HiPIMS). The applied in situ diagnostic techniques (Langmuir probe and energy-resolved time-of-flight mass spectrometry) supported monitoring changes in the deposition environment with respect to microwave (MW) power. During MAR-HiPIMS, the presence of nitride ions in the gas phase (ZnN+, ZnN2+, SnN+, SnN2+) was detected. This indicates that the MW plasma facilitated their production, as opposed to pure R-HiPIMS. Additionally, MW plasma caused post-ionisation of sputtered atoms and reduced the overall energy-per-charge range of incoming charged species. By varying the MW power and substrate biasing, films with comparable chemical compositions (approximately Zn0.92Sn1.08N2) but different structures, ranging from polycrystalline to preferentially textured, were successfully produced. The application of density functional theory (DFT) further enabled the relationship between the lattice parameters and the optical properties of ZTN to be explored, where the material's optical anisotropy nature was determined. It was found that despite considerable differences in crystallinity, the changes induced in the lattice parameters were subangstrom, causing only minor changes in the final optical properties of ZTN.

Enhancing the solar hydrogen generation performance of nickel-oxide nanostructured thin films doped with molybdenum

Using technology to store solar energy as hydrogen fuel (H2) on a scale corresponding to global energy use is a viable way to alleviate the energy crisis and environmental deterioration. This research deals with the manufacture of thin films prepared from nickel oxide (NiO) and their use in the photoelectrochemical (PEC) water-splitting process to produce green H2 as a clean energy fuel. Herein, pure and Mo-doped NiO thin films were successfully prepared using a straightforward sputtering method at different radio frequency (RF) power for the Mo target from 0 to 50 watt. x-ray diffraction (XRD), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), energy dispersive x-ray spectroscopy (EDX), and UV–vis spectroscopy techniques were used to analyze the structural, morphological, chemical composition, and optical characterization of the prepared films. The PEC behaviours for green H2 production and the impedance spectroscopy measurements were also investigated for all samples. In PEC measurements, the 50 W sample showed the highest PEC performance. At −0.4V versus RHE, the 50 W sample verified the highest value for the photocurrent density of about 1.7 mA cm−2 which was approximately four times more than the pure NiO sample. The applied biased photon-to-current conversion efficiency and incident photon-to-current conversion efficiency were also estimated. This research provided a fresh viewpoint on the design of highly active NiO-based photo-catalysts for the production of green H2 powered by solar light.

Effect of annealing temperature on the physical of nanostructured TiO2 films prepared by sol-gel method

This study uses glass substrates to create nanostructured TiO2 thin films employing SolGel method. Afterwards, TiO2 films are annealed in air for two hours at (400, 450, and 500) °C. The XRD tests demonstrate that all films are tetragonal polycrystalline and have orientations equal to those described in the literature. These findings suggest that when the annealing temperature rises, grain size increases. As the annealing temperature is raised, the Full Width at Half Maximum (FWHM) reduces from 0.57° to 0.0.51°, and the dislocation density drops from 45.22 to 39.22.18 nm, respectively. AFM has examined the thin films' surface morphology. The films formed using this method have good crystalline and homogenous surfaces, according to AFM tests. With an increase in annealing temperature, thin films' average particle size, average roughness, and Root Mean Square (RMS) value all drop. The films' optical characteristics. The transmission was over 97% decreased with increasing annealing temperatures. It is found that the band gap decreases from 3.42 to 3.3 eV with increasing annealing temperature. Between 300 and 900 nm, the films' refractive indices range from 2.89 to 2.2.76. With higher annealing temperatures, the films' extinction coefficients fall.

Fast response fabricated MoS2-photodiode based thin film

In this study, we present the fabrication and characterization of a thin film based on 1 T-MoS2 pn photodiode for the purpose of quick response photodetection application. The photodiode was fabricated using RF-sputtering process. The scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FTIR) techniques were employed to investigate the surface topology and structural characteristics of the nanostructured MoS2 thin film. The electrical properties of the photodiode that was produced were examined by conducting measurements of its current–voltage (I-V) characteristics across a range of bias voltages spanning from − 2 to + 2 V. The external quantum efficiency (EQE) of the pn photodiode that was produced was determined to be as high as 9.8%. Additionally, the internal quantum efficiency (IQE) was found to be as high as 10.5%. Furthermore, a time response of 1.748 ms was observed. The findings of this study illustrate the capability of MoS2 photodiodes in facilitating rapid response photodetection applications.

Synergistically enhanced NH3 gas sensing of graphene oxide-decorated Nano-ZnO thin films

This study focuses on enhancing nanostructured ZnO thin films ammonia (NH3) sensing capabilities at room temperature by integrating graphene-oxide (GO) via the drop-casting technique, thereby exploring the possibilities of tailoring NH3 sensing measurements. Structural investigations indicated the hexagonal-wurtzite structure of the sputtered ZnO and GO-decorated thin films. The Raman spectroscopy results validate the electrochemically exfoliated GO, and the X-ray photoelectron spectroscopy characterization revealed the Zn2+ state and oxygen vacancies. The NH3 gas sensing measurements for GO/ZnO revealed a remarkable increase in sensitivity, with a limit of detection (LOD) of 0.1 ppm. This exhibited a response 50 times superior to bare ZnO for 5 ppm of NH3 at room temperature (RT). As a result of decorating GO increased active sites and surface area. This significant enhancement in sensor response underscores the synergistic effect of GO-decoration, and ZnO leading to substantially improved gas-detecting capabilities.

Design of a new ZnO photocatalytic Fenton-like system for enhancing the removal of methylene blue at neutral pH

Although doping, nanostructuration, metallization, and binary/ternary oxide systems are widely used to improve the degradation kinetics in photocatalytic processes, rapid electron _ hole recombination remains one of its major limitations. On the other hand, homogeneous photo-Fenton-like processes suffer from the slow regeneration of Fe3+/Fe2+ catalysts and the formation of iron sludge at pH > 3. In this work, a new catalytic system is designed based on the coupling of nanostructured ZnO thin films photocatalysts with Fe3+/H2O2 (Fenton-Like) for the degradation of methylene blue (MB) molecules under UVA irradiation, at near-neutral pH (7.5). This coupled process promotes the formation of additional reactive oxygen species and reduces the formation of sludge by accelerating the regeneration of the iron catalysts in the medium. Furthermore, it exhibits a single kinetic regime of degradation with a rate constant of 0.0049 min−1 exceeding the sum of both individual processes and allowing therefore the removal of 94 % of MB after 480 min.

Sol–Gel Synthesis of Nanostructured Mesoporous Silica Powder and Thin Films

Mesoporous materials are special nanoporous materials containing well-defined mesochannels with a pore diameter between 2 and 50 nm. The high surface area, ordered structure, tunable pore size, and easiness of functionalization have made mesoporous silica powder and thin films interesting materials for a wide range of applications including drug delivery, absorption, separation, catalysis, energy conversion, and storage. The sol–gel process has emerged as a promising technique for the synthesis of nanostructured mesoporous silica materials as it provides the advantages of low-temperature processing and easy control of the synthesis parameters. Although it offers several advantages over other synthesis techniques, it also has the drawbacks of high sensitivity to processing conditions. Hence, this review paper aims to give critical insights into the sol–gel process, the chemistry of sol–gel silica, the formation mechanism of mesoporosity, and the effects of the reaction parameters. A good understanding of these phenomena is essential to better control and optimize the properties of the final material for specific needs and applications. Additionally, this review paper discusses the different methods applied to the synthesis of nanostructured ordered mesoporous thin film silica, including the Electrochemically Assisted Self-Assembly method of synthesis. The EASA method is a novel and promising technique for the synthesis of well-ordered and vertically aligned pore channels of mesoporous thin films as it is required for mass transport applications. Moreover, the effects of sol composition, pH, applied potential, and deposition time on the final thickness of the thin film are elaborated on in detail. Furthermore, this comprehensive review highlights the potential and opportunities for future research and development in the area to further advance and use its full potential advantages.

Structural, optical, morphological, and supercapacitive studies of electrophoretically deposited nanostructured Mn3O4 thin films

Herein, the trimanganese tetraoxide (Mn3O4) thin films were deposited by the simple electrophoretic deposition technique using MnSO4 precursor of different molarities (0.05, 0.075, 0.1, and 0.125 M). The effect of different molar concentrations of MnSO4 precursor on structure, morphology, optical properties, and supercapacitive performance has been examined. The deposited thin films were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, and Brunauer-Emmett-Teller studies. The Mn3O4 thin films have nanocrystalline tetragonal Hausmannite structure and porous morphology (grass/nanowire and nanoflower) with preferred orientation in the (220) plane. The supercapacitive performance of the Mn3O4 thin film electrodes was evaluated by cyclic voltammetry and galvanostatic charge-discharge techniques. The maximum specific capacitance value 237 F g−1 was obtained for the thin film deposited at 0.05 M MnSO4 concentration and also exhibited 70 % capacitance retention after 2000 cycles. The pseudocapacitive nature of Mn3O4 thin films was confirmed by cyclic voltammetry and electrochemical impedance spectroscopy studies. This study revealed the nanostructured Mn3O4 thin films have the potential to be used as electrode material for supercapacitor applications.

Nanostructured thin films of TiO2 tailored by anodization

Although nanostructured TiO2 layers have been widely prepared by anodization, thin films with thicknesses under 1 μm, over substrate other than Ti foils, with structures beyond the nanopores, had remained a challenge. In this work, such nanostructured TiO2 thin films were synthesized by anodization of Ti films deposited by sputtering on FTO/glass substrates. Anodization was performed in an electrolyte based on 0.6 wt% of NH4F, a graphite cathode and the application of 30 V during lapses ranging from 3 to 14 min. The amorphous TiO2 structures acquired the crystal anatase phase after a post-annealing treatment at 450 °C/4 h. Porous morphologies were observed for anodizing times of 3 and 4 min, sponges were formed with 5 and 6 min and vertical tubular structures were achieved by using 7 up to 9 min; dissolution was observed for longer times. Pore diameters of the structures were in the range of 27 to 47 nm, lengths were within the 330 and 1000 nm interval, transmittance was in the visible range of 70 ± 10%, the energy gap was 3.37 ± 0.02 eV and the wet contact angle was between 20 to 27°. One major contribution of the findings herein developed, is that they can be extended to TiO2 thin films, with a specific nanostructure, grown on a wide gamma of substrates, relevant for particular applications.

Spectroscopic ellipsometry modelling of thin AuSn films and nanostructures as plasmonics materials

A considerable interest in nanostructured thin films from intermetallic compounds of noble metals (Ag and Au) and post-transition metals is raised due to their unique plasmonic properties, which makes them potential materials for application in photonics, catalysis and biosensing systems. In this work the possibility for deposition of polycrystalline AuSn thin films was investigated, as thin films with the same composition and different thicknesses (10-100 nm) were obtained by co-depositing of Au and Sn metals. The chemical composition was determined by X-ray microanalysis. The X-ray diffraction patterns indicated formation of the intermetallic compound AuSn in the thin films. The complex permittivity ε = ε′ - i.ε″ of the thin AuSn films as function of the thickness was investigated by spectroscopic ellipsometry. The possibility for application of nanostructures from the AuSn intermetallic compound as suitable substrates for the needs of surface-enhanced Raman and fluorescence spectroscopy in the spectral interval 2.8 - 4.7 eV was analysed.

GdFe-based nanostructured thin films with large perpendicular magnetic anisotropy for spintronic applications

In this study, we investigated the impact of geometric factors on the magnetic anisotropy of Gd-Fe alloy thin films deposited on nanoporous alumina membranes. By synthesizing Gd-Fe alloy nanostructure thin films with different hole diameters (ranging from 45 to 90 nm) and keeping the layer thickness and lattice parameters fixed at 45 nm and 105 nm, respectively, we observed a significant perpendicular magnetic anisotropy (PMA) in samples with hole diameter above 65 nm. The transition from in-plane to out-of-plane magnetization in Gd-Fe alloy nanostructure thin films occurred at a critical antidot hole diameter of 75 nm. The observed variations in coercivity and remanence with the nanohole diameter are attributed to substantial changes in the magnetization mechanisms induced by the nanoholes. This novel induction of PMA in Gd-Fe alloy nanostructure thin films through the manipulation of geometric parameters in the antidot arrays opens new possibilities for tailoring the magnetic behavior of ferromagnetic metals with pronounced PMA.

Enhanced optical third-harmonic generation in phase-engineered nanostructured Zn1−x Cd x S thin films for optoelectronic device applications

A polycrystalline nanostructured thin film of zinc cadmium sulfide was meticulously fabricated on a glass substrate using the thermal evaporation method physical vapor deposition within a vacuum chamber. Different doping concentrations were introduced by varying the cadmium (Cd) content, resulting in Zn1-x Cd x S films with Cd concentrations ranging from x = 0.00–0.20 wt %. The impact of Cd doping on the third-order nonlinear optical (TONLO) properties of these films was thoroughly studied using the Z-scan method, employing a diode-pumped solid-state continuous-wave laser. To gain insight into the structural characteristics, the Zn1-x Cd x S thin films underwent analysis through x-ray diffraction. Optical studies confirmed the tunability of the optical band gap (Eg) in the Zn1-x Cd x S films, ranging from 3.88 eV for undoped ZnS to 2.80 eV for the film fabricated with 20 wt. % of Cd-content. This significant reduction in ‘Eg’ renders the films highly suitable for use as absorbing layers in applications such as solar cells and optoelectronics. Surface morphology analysis, performed via field emission scanning electron microscopy, revealed noticeable alterations with increased Cd doping. Significantly, the doped films exhibited a substantial redshift in the band edge and an increase in transmittance within the visible and near-infrared regions. The investigation of TONLO properties, including the nonlinear absorption coefficient (β), nonlinear refractive index (n 2) and susceptibility χ(3), yielded values ranging from 3.15 × 10−3 to 8.16 × 10−3 (cm W−1), 1.65 × 10−8 to 7.45 x 10–8 (cm2 W−1), and 3.12 × 10−5 to 7.86 × 10−5 (esu), respectively. These results indicate the presence of self-defocusing nonlinearity in the films. Overall, the outcomes underscore the potential of Cd-doped ZnS nanostructures in modifying surface morphology and enhancing NLO characteristics. Zn1-x Cd x S thin films exhibit promise for applications in nonlinear optical devices, as evidenced by these encouraging findings.

Nanostructured Black Silicon as a Stable and Surface-Sensitive Platform for Time-Resolved In Situ Electrochemical Infrared Absorption Spectroscopy.

Attenuated total reflection surface-enhanced infrared absorption spectroscopy (ATR-SEIRAS) is a powerful method for probing interfacial chemical processes. However, SEIRAS-active nanostructured metallic thin films for the in situ analysis of electrochemical phenomena are often unstable under biased aqueous conditions. In this work, we present a surface-enhancing structure based on etched black Si internal reflection elements with Au-coatings for in situ electrochemical ATR-SEIRAS. Using electrochemical potential-dependent adsorption and desorption of 4-methoxypyridine on Au, we demonstrate that black Si-based substrates offer advantages over commonly used structures, such as electroless-deposited Au on Si and electrodeposited Au on ITO-coated Si, due to the combination of high stability, sensitivity, and conductivity. These characteristics are especially valuable for time-resolved measurements where stable substrates are required over extended times. Furthermore, the low sheet resistance of Au layers on black Si reduces the RC time constant of the electrochemical cell, enabling a significantly higher time resolution compared to that of traditional substrates. Thus, we employ black Si-based substrates in conjunction with rapid- and step-scan Fourier transform infrared (FTIR) spectroscopy to investigate the adsorption and desorption kinetics of 4-methoxypyridine during in situ electrochemical potential steps. Adsorption is shown to be diffusion-limited, which allows for the determination of the mean molecular area in a fully established monolayer. Moreover, no significant changes in the peak ratios of vibrational modes with different orientations relative to the molecular axis are observed, suggesting a single adsorption mode and no alteration of the average molecular orientation during the adsorption process. Overall, this study highlights the enhanced performance of black Si-based substrates for both steady-state and time-resolved in situ electrochemical ATR-SEIRAS, providing a powerful platform for kinetic and mechanistic investigations of electrochemical interfaces.

Investigation of structural, phonon modes and electronic environment of GaP:Si nanostructure thin films

In the present work, silicon-doped gallium phosphide (GaP:Si) nanostructure thin films were deposited using atmospheric pressure chemical vapor deposition (APCVD) with Si doping wt.% varied from 0.5 to 2.5 wt%. AFM revealed the roughness varied from 5.612 to 7.337 nm and the wire-like shape was changed to agglomerated shape with the increase in Si doping from 0.5 to 2.5 wt% in GaP:Si thin films. Fractal dimension varied from 1.931 to 2.519 with an increase in Si doping wt.%. The d-spacing, lattice constant (a), crystallinity fraction and crystallite size (D) increased with an increase in Si wt.% in the GaP:Si films. The dislocation density and microstrain of GaP:Si varied from 0.020 to 0.001 ( × 1014 1/m2) and −0.0052 to 0.0072 respectively due to thermal stress and defect distribution. The TO and LO phonon lifetime varied from 0.41 to 0.33 ps and 0.45 to 0.27 ps respectively for GaP:Si thin films.

Low-temperature one-pot synthesis of tin(II) sulfide nanocrystalline thin films

Photosensitive thin films of tin (II) sulfide with p-type conductivity and a band gap of 1.03 ± 0.09 eV have been obtained within the framework of the principles of «green chemistry» using the one-pot approach. In order to expand the range of sulfidizers used in the technology of deposition of thin nanostructured SnS films by chemical deposition, the efficiency of using sodium thiosulfate solutions is shown. It has been found that thin SnS films with good adhesion to a dielectric substrate and a size of coherent scattering regions of about 30 nm can be obtained as a result of a chemical reaction of the hydrolytic decomposition of thiosulfate ions. The conditions for obtaining SnS are substantiated by the thermodynamic analysis of ionic equilibria. Quantum-chemical calculations show that the p-type conductivity of the synthesized SnS films is most likely due to tin vacancies.