Nanoscale Growth Research Articles

(Invited) Group IV Mid-Infrared Optoelectronics Leveraging Nanoscale Growth Substrates

Mid-infrared (MIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end, leveraging the ubiquitous silicon-based processing has emerged as a powerful strategy that can be accomplished through the use of group IV germanium-tin (GeSn) alloys. Indeed, due to their compatibility with silicon and their tunable bandgap energy covering the entire MWIR range, GeSn semiconductors are frontrunner platforms for compact and scalable MIR technologies. However, the GeSn large lattice parameter has been a major hurdle limiting the quality of GeSn epitaxy on silicon wafers. These limitations are further exacerbated as Ge1−xSnx layers and heterostructures with Sn contents at least one order of magnitude higher than the solubility are needed for device structures relevant to MWIR applications. In this regime, the as-grown layers are typically under a significant compressive strain, which impacts the bandgap directness and increases its energy at the Γ point, thus hindering the device performance and limiting the covered range of the MIR spectrum. This compressive strain build-up not only affects the band structure but also limits the incorporation of Sn atoms in the growing layer, making the control of Sn content a daunting task.In this presentation, we will show and discuss how sub-20 nm Ge nanowires provide effective compliant substrates to grow Ge1−xSnx alloys with a composition uniformity over several micrometers with a very limited build-up of the compressive strain. Ge/Ge1−xSnx structures with Sn content spanning the 6 to 18 at.% range are achieved. We will also demonstrate the integration of the obtained materials in optoelectronic device processing leading to tunable detectors and emitters [1,2]. For instance, photodetectors based on these materials were found to exhibit a high signal-to-noise ratio at room temperature and provide a tunable cutoff wavelength covering the 2.0 µm to 3.9 µm range. Additionally, the processed detectors were also integrated in uncooled imagers enabling the acquisition of high-quality images under both broadband and laser illuminations without the use of the lock-in amplifier technique. Finally, progress towards achieving nanoscale GeSn lasers will also be discussed [2].

Shape-Controlled Growth and In Situ Characterization of CdS Nanocrystals via Liquid Cell Transmission Electron Microscopy.

Controlling the growth, structure, and shape of CdS nanocrystals is crucial for harnessing their unique physicochemical properties across diverse applications. This control can be achieved by introducing chemical additives into the synthesis reaction mixture. However, precise manipulation of nanocrystal synthesis necessitates a thorough understanding of the formation mechanisms under various chemical conditions, a task that remains challenging. In this study, we employed in situ liquid cell transmission electron microscopy (TEM) to investigate the growth mechanisms of CdS nanocrystals in a reaction solution of cadmium chloride and thiourea, with sodium citrate serving as a structure-directing agent. We observed that CdS nanocrystals evolve through two distinct growth modes: (1) in the absence of sodium citrate, spherical nanocrystals isotropically transform into CdS nanocubes, and (2) in the presence of sodium citrate, cuboid nanocrystals preferentially extend along the {011} direction and anisotropically into CdS triangular nanoplates. Theoretical analysis has confirmed that the adsorption energy of sodium citrate on different crystal facets significantly influences the morphology of the CdS nanocrystals. Our findings not only provide a method for synthesizing CdS nanocrystals based on electron beam induction but also elucidate the intricate nanoscale growth mechanisms, offering insights that could inform the future rational design of nanocrystals with tailored morphologies.

Nanoscale Operando Imaging of Electrically Driven Charge-Density Wave Phase Transitions.

Structural transformations in strongly correlated materials promise efficient and fast control of materials' properties via electrical or optical stimulation. The desired functionality of devices operating based on phase transitions, however, will also be influenced by nanoscale heterogeneity. Experimentally characterizing the relationship between microstructure and phase switching remains challenging, as nanometer resolution and high sensitivity to subtle structural modifications are required. Here, we demonstrate nanoimaging of a current-induced phase transformation in the charge-density wave (CDW) material 1T-TaS2. Combining electrical characterizations with tailored contrast enhancement, we correlate macroscopic resistance changes with the nanoscale nucleation and growth of CDW phase domains. In particular, we locally determine the transformation barrier in the presence of dislocations and strain, underlining their non-negligible impact on future functional devices. Thereby, our results demonstrate the merit of tailored contrast enhancement and beam shaping for advanced operando microscopy of quantum materials and devices.

On-Substrate Fabrication of CsPbBr3 Single-Crystal Microstructures via Nanoparticle Self-Assembly-Assisted Low-Temperature Sintering.

The growth of all-inorganic perovskite single-crystal microstructures on substrates is a promising approach for constructing photonic and electronic microdevices. However, current preparation methods typically involve direct control of ions or atoms, which often depends on specific lattice-matched substrates for epitaxial growth and other stringent conditions that limit the mild preparation and flexibility of device integration. Herein, we present the on-substrate fabrication of CsPbBr3 single-crystal microstructures obtained via a nanoparticle self-assembly assisted low-temperature sintering (NSALS) method. Sintering guided by self-assembled atomically oriented superlattice embryos facilitated the formation of single-crystal microstructures under mild conditions without substrate dependence. The as-prepared on-substrate microstructures exhibited a consistent out-of-plane orientation with a carrier lifetime of up to 82.7 ns. Photodetectors fabricated by using these microstructures exhibited an excellent photoresponse of 9.15 A/W, and the dynamic optical response had a relative standard deviation as low as 0.1831%. The discrete photosensor microarray chip with 174000 pixels in a 100 mm2 area showed a response difference of less than 6%. This method of nanoscale particle-controlled single crystal growth on a substrate offers a perspective for mild-condition preparation and in situ repair of crystals of various types. This advancement can propel the flexible integration and widespread application of perovskite devices.

Plasmonic Nano‐Rotamers with Programmable Polarization‐Resolved Coloration

Abstract3D‐shaped artificial Mg nano‐rotamers with a programmable dihedral angle between two plasmonic arms, designed to exhibit both programmable linear and circular polarization properties, are presented. The nanoscale physical shadow growth technique offers precise control over the angular alignment in these nanostructures with 1° angular precision, thus controlling their symmetry from achiral C2v and C2h to chiral C2. As a result, they give rise to a wide range of polarization‐resolved coloration, spanning from invisible to visible colors with 46% transmission contrast for linear polarization while exhibiting 0.08 g‐factor in visible for circular polarization. These nano‐rotamers hold great potential for various applications in adaptive photonic filters, memory, and anticounterfeiting devices, benefiting from their tunable plasmonic properties.

Self-Oscillated Growth Formation of Standing Ultrathin Nanosheets out of Uniform Ge/Si Superlattice Nanowires

Self-oscillation is an intriguing and omnipresent phenomenon that governs a broad range of growth dynamics and formation of nanoscale periodic and delicate heterostructures. A self-oscillating growth phenomenon of catalyst droplets, consuming surface-coating a-Si/a-Ge bilayer, is exploited to accomplish a high-frequency alternating growth of ultrathin crystalline Si and Ge (c-Si/c-Ge) nano-slates, with Ge-rich layer thickness of 14–19 nm, embedded within a superlattice nanowire structure, with pre-known position and uniform channel diameter. A subsequent selective etching of the Ge-rich segments leaves a chain of ultrafine standing c-Si nanosheets down to ∼ 6 nm thick, without the use of any expensive high-resolution lithography and growth modulation control. A ternary-phase-competition model has been established to explain the underlying formation mechanism of this nanoscale self-oscillating growth dynamics. It is also suggested that these ultrathin nanosheets could help to produce ultrathin fin-channels for advanced electronics, or provide size-specified trapping sites to capture and position hetero nanoparticle for high-precision labelling or light emission.

Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology

The AlN nucleation layers of different thicknesses were grown on a 100 mm 4H-SiC substrate in a low-pressure MOCVD. By using in-situ high-temperature etching of the substrate steps, the AlN nucleation layer could achieve layered growth as soon as possible, and finally achieve 11.6 nm. The complete AlN film was prepared, and the surface morphology and interface quality of AlN were analyzed with atomic force microscope and transmission electron microscope. A 1.8 μm thick GaN HEMT epitaxial material was prepared based on the ultra-thin AlN nucleation layer. The (002) and (102) plane rocking curves of GaN had a FWHM of 138arcsec and 231arcsec, and the electrons mobility of the heterojunction two-dimensional electron gas reached 2200 cm2/V·s. The AlN interface thermal resistance measured by the high-precision 3ω method was reduced to 5.53 × 10−9 m2K/W.

Design and fabrication process flow for high-efficiency and flexible InGaN solar cells

We present the design of high-efficiency and flexible InGaN solar cells based on nano-pyramid absorbers, which allows for high indium incorporation and reduced polarization effects while maintaining high crystalline quality. The process uses nanoscale selective area growth and van der Waals epitaxy on two-dimensional (2D) hexagonal boron nitride on sapphire substrates. The 2D layer enables mechanical release of solar cells via self-lift-off and its transfer to a flexible substrate. Through coupled optical and electrical simulations, we compare different designs of the p- and n-regions and propose two device architectures that combine mechanical flexibility and high power conversion efficiency (up to 16.4%). This approach can provide a solution for the fabrication of high-efficiency, low-cost and flexible InGaN-based solar cells.

Quasi/non-equilibrium state in nanobubble growth trajectory revealed by in-situ transmission electron microscopy

Nanobubbles have attracted significant attention in recent years for their potential applications in various fields, including engineering, environmental, biological, and medical. Furthermore, different types of nanobubbles are used for different fields due to their distinct properties. Yet, the challenge remains to understand the growth kinetics of both interfacial and bulk nanobubbles at the nanoscale to meet the requirements of different applications. Using liquid cell transmission electron microscopy, we revealed a quasi-equilibrium state in the growth trajectory of nanobubbles induced by the electron beam in the aqueous solution in real-time. Specifically, we successfully distinguished between interfacial and bulk nanobubbles by combining the analysis of growth kinetics and the Fresnel fringe method. Furthermore, the non-equilibrium growth of some nanobubbles from solution to the interface was revealed by the above method. These insights on the nanoscale growth kinetics of nanobubbles can help better engineer tailored nanobubbles with specific kinetic behaviors for different applications.

Deposition, diffusion, and nucleation on an interval

Motivated by nanoscale growth of ultra-thin films, we study a model of deposition, on an interval substrate, of particles that perform Brownian motions until any two meet, when they nucleate to form a static island, which acts as an absorbing barrier to subsequent particles. This is a continuum version of a lattice model studied in the applied literature. We show that the associated interval-splitting process converges in the sparse deposition limit to a Markovian process (in the vein of Brennan and Durrett) governed by a splitting density with a compact Fourier series expansion but, apparently, no simple closed form. We show that the same splitting density governs the fixed deposition rate, large time asymptotics of the normalized gap distribution, so these asymptotics are independent of deposition rate. The splitting density is derived by solving an exit problem for planar Brownian motion from a right-angled triangle, extending work of Smith and Watson.

Nanoscale crystal growth processes triggered by captured solid impurity particles

Atomic force microscopy (AFM) was used to study the influence of solid neutral particles on dynamics and kinetics of surface growth on nanoscale. The experiment involved real-time observations of the hydroxymethylquinoxalinedioxide (C10H10N2O4) surface capturing micrometer tourmaline particles of no particular shape and with low adhesiveness to the material of the host crystal. It was made possible to visualize in detail a hillock formation on a screw dislocation triggered by a captured particle, as well as dislocation propagation through the overgrowing macrostep.Out of the multitude of similar size particles, only one of them generated a long-term screw dislocation – that was the particle in whose area a Frank-Read dislocation had been triggered even before the particle cavities were sealed. A detailed scanning showed that the wellknown phenomenon of a dislocation propagating through the overgrowing layers manifests itself as creation of a new screw hillock with monomolecular steps exactly above the lower hillock axis.The author’s method of statistical processing of AFM data was used to compile an array of average tangential and average normal growth rates and their fluctuations. In spite of the matter in the solution not being refilled, the normal and tangential rates showed constant and significant increase.The results were compared with the data from several earlier experiments with and without special impact during the growth process. It was established that the growth rate in the experiment with incorporation of impurities has small and almost stable fluctuations just like in the experiments without any impact.

Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A

A process sequence enabling the large-area fabrication of nanopillar-patterned semiconductor templates for selective-area heteroepitaxy is developed. Herein, the nanopillar tops surrounded by a SiNx mask film serve as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such patterned GaAs(111)A templates is investigated by means of electron microscopy. It is found that defect-free nanoscale InAs islands grow selectively on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular dark-field scanning transmission electron microscopy imaging reveals that for a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite phase arms extending along the lateral ⟨112¯⟩ directions from the central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed vapor–liquid–solid growth on {111¯} B facets, which leads to a kinetically induced preference for the nucleation of the wurtzite phase driven by the local, instantaneous V/III ratio, and to a concomitant reduction of surface energy of the nanoscale diameter arms.

Lifting the cloak of invisibility: Gold in pyrite from the Olympic Dam Cu-U-Au-Ag deposit, South Australia

Abstract “Invisible gold” refers to gold (Au) occurring either within the lattice of a host sulfide or as discrete nanoparticles (NPs, <100 nm diameter) within a host that are only observable when imaged at very high magnifications. Previous research has regarded the physical form of invisible gold to be partially controlled by the concentration of arsenic (As) in the host sulfide, with stability fields for lattice-bound vs. Au-NPs defined by an empirical Au-As solubility curve. We undertook micrometer- and nanoscale analysis of a representative sample of As-Co-Ni-(Au)-bearing pyrite from Cu-mineralized breccias in the deeper part of the Olympic Dam Cu-U-Au-Ag deposit (South Australia) to define the location and physical form of Au and accompanying elements. Trace element geochemistry and statistical analysis show that >50% of pyrites contain measurable Au and As, and plot below the Au-As solubility curve. Au and As are geochemically associated with Te, Bi, Pb, Ag, and Sn. Primary oscillatory zoning patterns in pyrite defined by As-Co-Ni are reshaped by processes of dissolution-reprecipitation, including new nanoscale growth and rhythmical misorientation structures. Low-angle slip dislocations, twist-wall boundaries and deformation-dipole nanostructures are associated with Te-Bi-Pb-enrichment and host Au-Ag-telluride nanoparticles (NPs). Electrum NPs occur associated with pores coated by Bi-Ag-tellurides or within chalcopyrite particles. Bi-Pb-sulfotellurides, petzite, and sylvanite were identified by atomic-scale scanning transmission electron microscopy. The data support trace element (re)mobilization during pyrite deformation at the brittle to ductile transition (0.5–1 kbar, 300–400 °C) during brecciation. Au-NP formation is decoupled from initial As incorporation in pyrite and instead fingerprints formation of strain-induced, chalcogen-enriched nanoscale structures. Pore-attached NPs suggest scavenging of Au by Bi-bearing melts with higher rates of fluid percolation. Similar scenarios are predictable for pyrite-hosted “invisible Au” in pyrite from other deposits that experienced multiple overprints. Unveiling the cloak of invisibility using contemporary micro- to nano-analytical techniques reveals new layers of complexity with respect to the trace/minor element incorporation in mineral matrices and their subsequent release during overprinting.

Monitoring the rapid nanocrystal transformation via trapped intermediates of silica encapsulation

In transmission electron microscopy (TEM), encapsulation is an important tool to preserve the nanoparticles from aggregation, weathering, and destructive high-energy electron beam. Traditionally, encapsulation can only be used to trap end products. This study pushes the limit of in situ encapsulation so that intermediates of short time scale can be trapped. Nanocrystals of water-soluble salts were generated from a solute-induced phase separation (SIPS) process. By performing a modified Stöber encapsulation on different time points of the process, a series of intermediates can be trapped by silica shells. By arranging and comparing the intermediates, it is possible to reconstruct the growing process of those water-soluble salt nanocrystals. Moreover, an example of the transition from nanocrystal to liquid droplet was discovered, unveiling a potentially alternative route of the SIPS process. The reported technique could capture more snapshots for TEM imaging, providing crucial information on the study of nanoscale growth mechanism.

High-Performance Thermoelectrics Based on Solution-Grown SnSe Nanostructures.

Two-dimensional layered tin selenide (SnSe) has attracted immense interest in thermoelectrics due to its ultralow lattice thermal conductivity and high thermoelectric performance. To date, the majority of thermoelectric studies of SnSe have been based on single crystals. However, because synthesizing SnSe single crystals is an expensive, time-consuming process that requires high temperatures and because SnSe single crystals have relatively weaker mechanical stability, they are not favorable for scaling up synthesis, commercialization, or practical applications. As a result, research on nanocrystalline SnSe that can be produced in large quantities by simple and low-temperature solution-phase synthesis is needed. In this Perspective, we discuss the progress in thermoelectric properties of SnSe with a particular emphasis on nanocrystalline SnSe, which is grown in solution. We first describe the state-of-the-art high-performance single crystal and polycrystals of SnSe and their importance and drawbacks and discuss how nanocrystalline SnSe can solve some of these challenges. We illustrate different solution-phase synthesis procedures to produce various SnSe nanostructures and discuss their thermoelectric properties. We also highlight a unique solution-phase synthesis technique to prepare CdSe-coated SnSe nanocomposites and its unprecedented thermoelectric figure of merit (ZT) of 2.2 at 786 K, as reported in this issue of ACS Nano. In general, solution synthesis showed excellent control over nanoscale grain growth, and nanocrystalline SnSe shows ultralow thermal conductivity due to strong phonon scattering by the nanoscale grain boundaries. Finally, we offer insight into the opportunities and challenges associated with nanocrystalline SnSe synthesized by the solution route and its future in thermoelectric energy conversion.

Simulation of nanoscale domain growth for ferroelectric recording

The growth process of nm-scale polarization domains is of great interest from a physical point of view and is also important in the design of ferroelectric recording, which is expected to be a high-density information recording method. To clarify the growth of nanoscale domains in probe-based ferroelectric recording, a simulation method based on the time-dependent Ginzburg–Landau equation has been developed. In this method, wall pinning is included in the phenomenological free energy by using a coercive field. The simulation results agreed with the experimental results for nanoscale domain writing using a probe. The developed method was used to determine the relationship between the smallest writable domain size and the material properties: smaller wall energy density and larger saturation polarization and coercive field enable writing smaller domains. The developed method is thus effective in designing ferroelectric recording systems for high-density information storage.

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide.

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitigation is of great interest in photovoltaics as it opens up more material combinations for use in devices. Herein, an overview of the vapor–liquid–solid and selective area epitaxy growth approaches applied to zinc phosphide (Zn3P2), an earth-abundant absorber material, is presented. First, we show how different morphologies, including nanowires, nanopyramids, and thin films, can be achieved by tuning the growth conditions and growth mechanisms. The growth conditions are also shown to greatly impact the defect structure and composition of the grown material, which can vary considerably from the ideal stoichiometry (Zn3P2). Finally, the functional properties are characterized. The direct band gap could accurately be determined at 1.50 ± 0.1 eV, and through complementary density functional theory calculations, we can identify a range of higher-order band gap transitions observed through valence electron energy loss spectroscopy and cathodoluminescence. Furthermore, we outline the formation of rotated domains inside of the material, which are a potential origin of defect transitions that have been long observed in zinc phosphide but not yet explained. The basic understanding provided reinvigorates the potential use of earth-abundant II–V semiconductors in photovoltaic technology. Moreover, the transferrable nanoscale growth approaches have the potential to be applied to other material systems, as they mitigate the constraints of substrate–material combinations causing interface defects.

Investigation of Electrical and Optical Properties of Low Resistivity Indium Oxide Thin Films

Indium Oxide (In2O3) is a wide bandgap (~3.6eV) n-type transparent conducting oxide (TCO) semiconductor with high conductivity and good transparency in the visible region [1]. In2O3 finds several applications such as photovoltaic devices, transparent windows in liquid crystal displays and heterojunction solar cells [2]. The electrical and optical properties of In2O3 films vary depending on the partial pressure of the reactive gas used for the specific deposition technique, target to substrate distance, temperature at which the substrate is exposed during heat treatment following deposition, and the ambience in which it is treated [3]. In2O3 films has been deposited using vacuum evaporation, sputtering [4], chemical vapor deposition [5], spray pyrolysis [6], ion assisted deposition [7], spin coating [8] and atomic layer epitaxial growth [9].In this work, In2O3 films are deposited on glass substrates by reactive sputtering of In2O3 target in presence of oxygen gas. The deposition was carried out under different flow rates of oxygen. The influence of oxygen gas flow on electrical and optical characteristics of the films are studied. Influence of oxygen gas flow on electrical resistivity of In2O3 thin films is investigated. Transmission characteristics of the deposited films are studied using UV-visible spectrophotometer. Absorption coefficient is calculated from the transmission values and optical bandgap is extracted from Tauc-plot. Min-Suk Lee, Won Chel Choi, Eun Kyu Kim, Chun Keun Kim, Suk-Ki Min, Characterization of the oxidized indium thin films with thermal oxidation, Thin Solid Films, Volume 279, Issues 1–2, 1996, Pages 1-3, ISSN 0040-6090.Abbas bagheri khatibani, Seyed Mohammad Rozati, Z. Bargbidi (2012). Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films. Acta Physica Polonica Series a. 122. 220. 10.12693/APhysPolA.122.220.Radhouane Bel Hadj Tahar, Takayuki Ban, Yutaka Ohya, and Yasutaka Takahashi, Tin doped indium oxide thin films: Electrical properties, Journal of Applied Physics 83:5, 2631-2645.Sundaram, K.B. and Bhagavat, G.K. (1981), Preparation and properties of indium oxide films. phys. stat. sol. (a), 63: K15-K18.Cheng, G., Stern, E., Guthrie, S. et al. Indium oxide nanostructures. Appl. Phys. A 85, 233–240 (2006).Memarian, N., Rozati, S.M., Elamurugu, E. and Fortunato, E. (2010), Characterization of SnO2:F thin films deposited by an economic spray pyrolysis technique. Phys. Status Solidi (c), 7: 2277-2281.S. Cho, K. H. Yoon, S. K. Koh, J. Appl. Phys. 89, 3223 (2001).Gurto, M. Ivanovskaya, A. Pfau, U. Weimer, W. Gopel, Thin Solid Films 307, 288 (1997)Aikainen, M. Ritala, W. M. Li, R. Lappalainen, M. Leskele, Appl. Surf. Sci. 112, 231 (1997).

Nanoscale friction and growth of surface oxides on a metallic glass under electrochemical polarization

Metallic glasses are excellent materials for micromechanical systems, where miniature components involving mechanical contact require control of friction at the microscopic scale. We report on an in-situ study of the structure of oxide films formed upon electrochemical polarization and their role in nanoscale friction on a metallic glass in aqueous environment using atomic force microscopy. The oxide film has a bilayer structure, as revealed by repeated scanning with the tip of an atomic force microscope. The dependence of friction on electrochemical potential reveals the growth mechanism and highlights the role of the oxide films for the frictional response of metallic glasses. The chemical sensitivity of nanotribology studies under electrochemical control contributes to the understanding of corrosion mechanisms on metallic glasses.

Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy.

Here, SiGeSn nanostructures were grown via molecular beam epitaxy on a Si (111) substrate with the assistance of Sn droplets. Owing to the thermal effect and the compressive strain induced by a lattice mismatch, Si and Sn atoms were successfully incorporated into the Ge matrix during the Sn-guided Ge deposition process. A low growth temperature of 350 °C produced a variety of SiGeSn nanostructures of different sizes, attributed to the variation of the initial Sn droplet size. Using energy-dispersive X-ray spectroscopy, the Sn, Si and Ge contents of a defect-free SiGeSn nanoisland were approximately determined to be 0.05, 0.09 and 0.86, respectively. Furthermore, as the growth temperature increased past 600 °C, the growth direction of the nanostructure was changed thermally from out-of-plane to in-plane. Meanwhile, the stacked SiGeSn nanowires grown along the 〈112〉 direction remained defect-free, though some threading dislocations were observed in the smooth SiGeSn nanowires along the 〈110〉 direction. These results offer a novel method to grow Si-based SiGeSn nanostructures while possessing important implications for fabricating further optoelectronic devices.