Enhanced light extraction from a GaN-based power chip (PC) of greenlight-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprintlithography is presented. At a driving current of 350 mA and with a chip size of1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PCLEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the samedevice without a rough p-GaN surface. In addition, by examining the radiationpatterns, the green PC LED with nano-rough p-GaN surface shows stronger lightextraction with a wider view angle. These results offer promising potential toenhance the light output powers of commercial light-emitting devices by usingthe technique of nanoimprint lithography under suitable nanopattern design.