Nanopillars Research Articles

Marangoni flow-guided molecular accumulation for sensitive and rapid SERS detection of phthalates

Public attention has been emerging for the prevention and assessment of healthcare risks from phthalate esters (PAEs) in daily life. For the effective detection of small environmentally hazardous materials, we suggest two major points: i) the formation of high-density hotspots and ii) the delivery of molecules to the activated plasmonic regions. In this study, we developed a method for laser-induced Marangoni flow in cotton fabric (CF) nanopillars (NPs) deposited with Au (Au/CFNPs) for the detection of PAEs by surface-enhanced Raman spectroscopy (SERS). We optimized the performance of the Au/CFNP platforms by adjusting both the maskless plasma etching time and the Au deposition thickness. Narrow (∼8 nm) and populated hotspots were achieved at an Ar plasma treatment time of 30 s and a Au thickness of 150 nm. The molecular behaviors were observed via real-time monitoring of SERS signals. Under continuous laser illumination, Marangoni radial convection flow became predominant over the outward capillary force, resulting in molecular accumulation in the detection areas. For small probe dyes and PAEs, the maximum intensities were achieved within 80 s after the injection of analytes and their signal fluctuations were estimated to have a relative standard deviation of < 10 %, which indicated sensitive and reproducible sensing. The prediction of PAEs extracted from the actual samples was investigated on the basis of a model used to quantitatively fit reference samples and the results were compared with those obtained by high-performance liquid chromatography. The results demonstrated that the combination of densified hotspots on three-dimensional porous substrates and laser-induced Marangoni flow is highly desirable for on-site early screening assays for low-quantity harmful materials present in surrounding environments.

SERS-integrated centrifugal microfluidic platform for the detection and quantification of Chemical Warfare Agents in single-component solution and mixtures

Chemical Warfare Agents (CWAs) are toxic chemicals. Among CWAs, nerve agents are lethal compounds at low concentrations, and, thus, there is the need to detect and quantify the danger. The combination of Surface-Enhanced Raman Spectroscopy (SERS) with centrifugal microfluidic (CM) systems is a possibility for a safer handling and a fast analysis of nerve agents.In this work, the SERS signal from single-component solutions and mixtures of Tabun (GA) and VX were analyzed with Au-capped silicon nanopillar (NP) SERS substrates integrated on a CM platform and recorded with a custom-built Raman System (RS). Univariate and multivariate analysis methods were applied for the quantification. Both GA and VX were detected and quantified individually with Partial Least Squares regression (PLSR) models, with LoD and LoQ values of 7.39 ppm and 22.17 ppm respectively for GA, and 7.13 ppm and 21.39 ppm for VX. Detection and quantification of GA and VX in mixtures was achieved with Supported Vector Machine (SVM), obtaining R2 of the prediction 0.87 and 0.95, respectively.The results obtained show the potential of the SERS-integrated CM platform combined with machine learning analysis as a reliable method for CWAs on-site detection and quantification and for national security applications in real-case scenarios.

Cellular Nanointerface of Vertical Nanostructures: Impact of Size‐Modulated Nanopillar Arrays on Neuronal Morphology, Maturation, and Synapse Formation

Investigating the cellular mechanisms facilitated by highly ordered nanostructures in vitro neuronal networks is crucial for advancing biomedical research. However, the intricate effects of these nanostructures on cellular behavior remain unclear. Herein, we explore how variations in nanopillar (NP) array dimensions, defined by the spacing‐to‐diameter (S/D) ratio, influence cortical neuronal responses—including cellular morphology, mechanosensing, neuronal maturation, and synapse formation. NP arrays with a low S/D ratio accelerate neurite protrusion and enhance neuronal maturation. These topography‐driven changes are attributed to the degree of cell confinement on NPs, which can be visualized using focused ion beam scanning microscopy. Furthermore, the synaptic density in cortical neurons declines as the S/D ratio decreases, with neurons preferring to form synapses along the NPs. By utilizing correlative light and electron microscopy, the spatial organization of these synapses is mapped relative to the NP geometries, revealing specialized synaptic regions with remarkable clarity. This approach to designing high‐aspect‐ratio nanostructures with various S/D ratios holds broad applications in materials engineering, offering insights into nervous system engineering and neural‐interfacing bioelectronics.

Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering

GaN-on-diamond wafers are investigated to overcome the heat accumulation issues in GaN-based electronic devices. Until now, growing the high-quality GaN film on the diamond for device manufacture is still a great challenge. In this study, a new strategy of high-quality GaN on (111) diamond was proposed for the realization of high-performance GaN-on-diamond devices. The nano-patterned buffer engineering was utilized to greatly improved the GaN film on (111) diamond. The Al0.78Ga0.22N nano-patterned buffer reformed the morphology, ensuring that c orientation is the primary growth direction. The subsequent overgrowth of Al0.47Ga0.53N broadened the nano pillars and introduced stacking faults, improving the coalescence process and dislocations blockage. In addition, the coalescence process of the Al0.26Ga0.74N layer bent the treading dislocations, inducing the dislocations to annihilate. As a result, we could obtain remarkably high-quality GaN films on (111) diamond. The high-resolution X-ray diffraction rocking curve showed a full width at half maximum (FWHM) value of 770/986 arcsec at (002)/(102), which is the narrowest result reported. To the best of our knowledge, the RC FWHM at (102) of epitaxial GaN on diamond is reported firstly. Overall, this study provided a new strategy for obtaining high-quality GaN films on (111) diamonds for high-performance GaN-on-diamond devices.

Study of Finite Element Simulation on the Mechano-Bactericidal Mechanism of Hierarchical Nanostructure Arrays.

Biomimetic nanostructures with bactericidal performance have become the research focus in constructing sterilization surfaces, but the mechano-bactericidal mechanism is still not fully understood, especially for the hierarchical nanostructure arrays with different heights. Herein, the interaction between Escherichia coli cells and nanostructure arrays was simulated by finite element, and the initial rupture points, i.e., critical action sites, of bacterial cells and the effects of nanostructure geometries on the cell rupture speed were analyzed based on the mechano-response of Escherichia coli cells on flat (identical heights) and hierarchical nanostructure arrays. The critical action sites of bacterial cells on nanostructure arrays are all at the three-phase junction zone of cell-liquid-nanostructure, but they are slightly shifted by the height difference ΔH of nanostructures on hierarchical nanopillar (NP)/nanosheet (NS) arrays, where the NP is higher than the NS. When ΔH < 20 nm, the site nears the NS corners, and when ΔH ≥ 20 nm, the site is consistent with that of the NP/NP array, i.e., the site locates at the three-phase junction zone of cell-liquid-high NP. In addition, except for decreasing the NP diameter, the NS thickness/width, or properly increasing the nanostructure spacing, the cell rupture can be accelerated via increasing the ΔH of nanostructures. ΔH = 40 nm is distinguished as the boundary for the effect of nanostructure ΔH on the cell rupture speed. When ΔH < 40 nm, the cell rupture speed rapidly increases as the ΔH increases; when ΔH ≥ 40 nm, the cell rupture speed reaches the maximum value and remains stable. This study provides a new strategy on how to design high-efficiency bactericidal surfaces.

Plasmonic Nanopillars-A Brief Investigation of Fabrication Techniques and Biological Applications.

Nanopillars (NPs) are submicron-sized pillars composed of dielectrics, semiconductors, or metals. They have been employed to develop advanced optical components such as solar cells, light-emitting diodes, and biophotonic devices. To integrate localized surface plasmon resonance (LSPR) with NPs, plasmonic NPs consisting of dielectric nanoscale pillars with metal capping have been developed and used for plasmonic optical sensing and imaging applications. In this study, we studied plasmonic NPs in terms of their fabrication techniques and applications in biophotonics. We briefly described three methods for fabricating NPs, namely etching, nanoimprinting, and growing NPs on a substrate. Furthermore, we explored the role of metal capping in plasmonic enhancement. Then, we presented the biophotonic applications of high-sensitivity LSPR sensors, enhanced Raman spectroscopy, and high-resolution plasmonic optical imaging. After exploring plasmonic NPs, we determined that they had sufficient potential for advanced biophotonic instruments and biomedical applications.

Hydrophobic Si nanopillar array coated with few-layer MoS2 films for surface-enhanced Raman scattering

In this study, we covered Si nanopillar (NP) array with few-layer MoS2 films to convert their wettability characteristics from hydrophilic to hydrophobic for applications as a surface-enhanced Raman scattering (SERS) substrate. The Si NP array was fabricated using a semiconductor process. We then sulfurized and transferred MoO3 films coated onto the Si NP array to MoS2 films. The surface morphology and cross-sectional profile of the MoS2-coated Si NP array structure was examined using scanning electron microscopy and transmission electron microscopy. The SERS results indicate that the substrate exhibits a favorable enhancement factor of 1.76 × 103 and a detection limit of approximately 10−5M for Rhodamine 6G (R6G) utilized as the test molecule, attributed to the charge transfer (CT) mechanism at the interface between MoS2 and R6G. Contact angle measurements showed that the MoS2-coated Si NP array possesses a hydrophobic surface. Our results suggest that an MoS2-coated Si NP array with CT and hydrophobicity characteristics is extremely promising SERS substrates for SERS applications.

CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications

This study addresses the complementary metal-oxide-semiconductor-compatible fabrication of vertically stacked Si/SiO2/Si nanopillars (NPs) with embedded Si nanodots (NDs) as key functional elements of a quantum-dot-based, gate-all-around single-electron transistor (SET) operating at room temperature. The main geometrical parameters of the NPs and NDs were deduced from SET device simulations using the nextnano++ program package. The basic concept for single silicon ND formation within a confined oxide volume was deduced from Monte-Carlo simulations of ion-beam mixing and SiO x phase separation. A process flow was developed and experimentally implemented by combining bottom-up (Si ND self-assembly) and top-down (ion-beam mixing, electron-beam lithography, reactive ion etching) technologies, fully satisfying process requirements of future 3D device architectures. The theoretically predicted self-assembly of a single Si ND via phase separation within a confined SiO x disc of <500 nm3 volume was experimentally validated. This work describes in detail the optimization of conditions required for NP/ND formation, such as the oxide thickness, energy and fluence of ion-beam mixing, thermal budget for phase separation and parameters of reactive ion beam etching. Low-temperature plasma oxidation was used to further reduce NP diameter and for gate oxide fabrication whilst preserving the pre-existing NDs. The influence of critical dimension variability on the SET functionality and options to reduce such deviations are discussed. We finally demonstrate the reliable formation of Si quantum dots with diameters of less than 3 nm in the oxide layer of a stacked Si/SiO2/Si NP of 10 nm diameter, with tunnelling distances of about 1 nm between the Si ND and the neighboured Si regions forming drain and source of the SET.

Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

Thermal management has become more critical as semiconductor devices are miniaturized. In metal–oxide–semiconductor field-effect transistors, the problem is the reduction in electron mobility in the channel layer owing to the temperature rise caused by heat generation near the channel-drain region. Focusing on the mean free paths of phonons and electrons in Si, nanostructures of a few 10 nm may only hinder heat propagation without affecting electron transportation. Therefore, inserting nanostructures into the channel layer may prevent a temperature rise and maintain a higher electron mobility. To discuss the relationship between the spacing between the nanopillars (NPs) and the heat generation and carrier behavior of the Si-NP/SiGe composite film, samples with NP spacings of 13, 27, or 47 nm were prepared. We previously confirmed that the thermal conductivity of the Si-NP/SiGe composite film decreased as NP spacing narrowed. The NPs scattered phonon propagation and suppressed heat propagation. However, carrier transport properties such as electrical conductivity, carrier mobility, and carrier lifetime have never been discussed. The laser heterodyne photothermal displacement method was used to examine the effect of nanostructures on carrier mobility and carrier lifetime of Si-NP/SiGe composite films. We observed that the carrier lifetime became longer when the NP spacing was comparable to the electron mean-free path of approximately 27 nm.

A versatile nanoelectrode platform for electrical recording of diverse cell types.

Electrical signaling governs muscle contraction, brain function, and insulin secretion. While clinical EEG/ECG techniques signify aberrant electrical activity during disease prognosis, it is unclear how single cell action potentials ≪APs≫ are affected by diseases or novel drugs. Patch clamp and microelectrode arrays preclude researchers from collecting APs from many cells for prolonged periods of time. Here, we present a higher throughput and tunable platform for obtaining electrophysiological signals from single adherent cells with millisecond resolution. Our platform contains arrays of nanopillar (NP) electrodes made using maskless photolithography and a two-step dry and wet etching technique. We optimized various surface functionalization techniques to improve adhesion of diverse cell types on our platforms. We demonstrate electrical recording from electrogenic 2D cardiac monolayers, 3D printed cardiomyocytes, neuron-like PC12 adherent cells, and bacterial biofilms. Intracellular action potentials were observed for several days in 2D monolayers and 3D-printed cardiomyocytes with altered waveform shapes, indicating differences in cytoarchitecture for drug screening. 3D cultures grown on paired-electrode platforms showed simultaneous APs and extracellular spiking within a 10-µm distance, suggesting the possibility of extrapolating APs from in vivo extracellular signals. In differentiated PC12 cells, intracellular APs were recorded over several days for the first time, and morphologies of neurites atop nanopillars were characterized using fluorescence microscopy and electron microscopy. Our platform was redesigned to house bacterial biofilms, which show membrane potential oscillations in response to high potassium flow. Biofilm electrophysiology directly influences antibiotic resistance and gut microbiome heterogeneity. The versatility of our nanopillar electrode arrays to record electrical signals from cells with a range of sizes from 2 to 30 µm in diameter offers a powerful tool for understanding how single cell electrical activity affects function and disease.

Tunable Plasmonic Perfect Absorber for Hot Electron Photodetection in Gold-Coated Silicon Nanopillars

Infrared detection technology has important applications in laser ranging, imaging, night vision, and other fields. Furthermore, recent studies have proven that hot carriers which are generated by surface plasmon decay can be exploited for photodetection to get beyond semiconductors’ bandgap restriction. In this study, silicon nanopillars (NPs) and gold film at the top and bottom of silicon nanopillars were designed to generate surface plasmon resonance and Fabry–Perot resonance to achieve perfect absorption. The absorption was calculated using the Finite Difference Time Domain (FDTD) method, and factors’ effects on resonance wavelength and absorption were examined. Here we demonstrate how this perfect absorber can be used to achieve near-unity optical absorption using ultrathin plasmonic nanostructures with thicknesses of 15 nm, smaller than the hot electron diffusion length. Further study revealed that the resonance wavelength can be redshifted to the mid-infrared band (e.g., 3.75 μm) by increasing the value of the structure parameters. These results demonstrate a success in the study of polarization insensitivity, detection band adjustable, and efficient perfect absorption infrared photodetectors.

Broadband omnidirectional infrared nanophotonic spectral controller for GaInAsSb thermophotovoltaic cell

Spectral controllers (SC) based on the square array of AlAs0.06Sb0.94 nanopillars (NP) and the aluminum back surface reflectors (BSR) are designed for the Ga0.84In0.16As0.14Sb0.86 TPV cells. The multiple optical resonance characteristics of the NP-BSR nanophotonic resonators are analyzed, which show the excellent light management performances. For the emitter temperature of 1000 °C, the angle-of-incidence and polarization-of-light weighted spectral efficiency of 90% is obtained by the optimized NP-BSR SC. Photovoltaic performances of the TPV cells are analyzed based on the coupled optical and electrical simulations. The results show the NP-BSRs perform substantially better than the normal quarter-wavelength anti-reflection coatings. In particular, the NP-BSRs show the strong light concentration ability and can be used to enhance the output power density of the ultra-thin film structured TPV cells. For the active layer of 0.6 μm, the output power density of over 1W.cm−2 and the conversion efficiency of nearly 30% are obtained by the NP-BSR TPV cell under the emitter temperature of 1000 °C.

CMOS compatible manufacturing of a hybrid SET-FET circuit

This study analyzes feasibility of complementary metal–oxide–semiconductor (CMOS)-compatible manufacturing of a hybrid single electron transistor–field effect transistor (SET-FET) circuit. The fundamental element towards an operating SET at room temperature is a vertical nanopillar (NP) with embedded Si nanodot generated by ion-beam irradiation. The integration process from NPs to contacted SETs is validated by structural characterization. Then, the monolithic fabrication of planar FETs integrated with vertical SETs is presented, and its compatibility with standard CMOS technology is demonstrated. The work includes process optimization, pillar integrity validation, electrical characterization and simulations taking into account parasitic effects. The FET fabrication process is adapted to meet the requirements of the pre-fabricated NPs. Overall, this work establishes the groundwork for the realization of a hybrid SET-FET circuit operating at room temperature.

Ultra-high mechanical damping during superelastic bending of micro pillars and micro beams in Cu-Al-Ni shape memory alloys

Mechanical spectroscopy techniques and internal friction measurements have historically offered a key contribution to the understanding of fundamental mechanisms of defects mobility and phase transformations in many kinds of materials. Nowadays, at the beginning of the millennium, the apparition of the new paradigm of nanotechnology reveals new unforeseen properties of the materials at the nano-scale. Nevertheless, instrumented nanoindentation appears as a new mechanical spectroscopy technique to approach the measure of internal friction at the nano-scale through the direct evaluation of the loss factor η. Indeed, nano compression tests on micro and nano pillars recently measured ultra-high mechanical damping in several Cu-based shape memory alloys (SMA). A step forward is given in the present work, approaching the design of potential micro dampers of SMA working in bending and torsion modes. Several micro devices were milled by focused ion beam (FIB) technique, on [001] oriented single crystals of a Cu-Al-Ni SMA. Ultra-high mechanical damping is demonstrated during superelastic bending of square section micro pillars by in-situ testing inside the scanning electron microscope, using a flat apex 60º-conical indenter in off-axis mode. Then, a series of micro beams and micro cantilevers were designed and milled by FIB, and tested using instrumented nanoindentation equipment by applying the load in bending mode as well as in a mixed bending-torsion mode during off-axis tests. In all cases, the internal friction, or mechanical damping per cycle and per unit of volume, was calculated from the measured load-displacement curve. Superelastic cycling during bending of micro pillars, micro beams and micro cantilevers, exhibits stable and reproducible ultra-high mechanical damping with a loss factor η > 0.1. These results paved the road for designing micro-dampers of Cu-based SMA, able to work in different mechanical modes of compression, bending and torsion, opening the way for many applications of mechanical damping at the nano-scale.

Efficient Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars with Growth Controlled Emission Energy.

Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening, which make them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as a highly efficient solid-state single-photon source operating at cryogenic temperatures. We show that single photons are generated due to the radiative recombination of excitons bound to neutral Cl atoms in ZnSe QW and the energy of the emitted photon can be tuned from about 2.85 down to 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following the developed advanced technology, we fabricate NPs with a diameter of about 250 nm using a combination of dry and wet-chemical etching of epitaxially grown ZnSe/ZnMgSe QW structures. The remaining resist mask serves as a spherical- or cylindrical-shaped solid immersion lens on top of NPs and leads to the emission intensity enhancement by up to an order of magnitude in comparison to the pillars without any lenses. NPs with spherical-shaped lenses show the highest emission intensity values. The clear photon-antibunching effect is confirmed by the measured value of the second-order correlation function at a zero time delay of 0.14. The developed single-photon sources are suitable for integration into scalable photonic circuits.

Incorporation of nano-features into surface photoactive arrays for broadband absorption of the solar radiation

Surface arrays of photoactive materials with subwavelength dimensions are important for energy harvesting applications due to their capacity for broadband and omnidirectional absorption of the solar radiation. It was recently proposed and demonstrated that the absorption performance of such arrays can be further amplified with the introduction of additional nano-features. In the current work we consider the incorporation of nano-features into nanopillar (NP) arrays. The considered nano-features are: quasi-nanolenses, sidewall nano-decorations, and decreasing the NP bottom diameter to transform it into a light funnel (LF). The underlying various light trapping mechanisms are examined using near-field microscopy. Near-field microscopy is used to obtained both high-resolution far-field imaging, as well as mapping of the near-field photon distributions of the arrays. Firstly, it is shown that the main contribution to far-field reflected photons is from the ambient surrounding the silicon structures. Secondly, the incorporation of the various nano-features induces a decrease in the reflected far-field photons which originate from this ambient region. Also, it is shown how the incorporation of quasi-nanolenses concludes a decrease in far-field photons reflected in the oblique directions with high polar angles, whereas the incorporation of sidewall nano-decorations leads to a decrease in far-field photons reflected in directions of small polar angles. Also, the incorporation of both qNL and sidewall nano-decorations is examined, and light trapping with the LF geometry is discussed and demonstrated. Finally, understanding the underlying light trapping mechanisms will support the deterministic design of subwavelength arrays incorporated with nano-features for efficient harvesting of the solar radiation.

Selective Area Heteroepitaxy of p-i-n Junction GaP Nanopillar Arrays on Si (111) by MOCVD

Gallium phosphide (GaP) is an important optical material due to its visible wavelength band gap and high refractive index. However, the bandgap of the thermodynamically stable zinc blende GaP is indirect, but wurtzite (WZ) structure GaP is direct bandgap. In this work, we demonstrate high-quality and dense GaP vertical nanopillar (NP) array directly on Si (111) substrates through selective area epitaxy (SAE) by MOCVD for the first time, through systemic studies of the effect of TMGa flow rate, growth temperature, and V/III ratio. Uniform GaP NPs are grown over a patterned <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$400\,\,\mu \text{m}\,\,\times 400\,\,\mu \text{m}$ </tex-math></inline-formula> area with 97.5% yield. Arrays of GaP vertical p-i-n NP diodes are demonstrated with a ideality factor and rectification ratio of 3.7 and 103, respectively. With the high yield of hexagonal structure and electrically proven device quality of GaP NPs through this growth method, this work represents a significant step in achieving GaP NP based optoelectronic devices, such as micro-LEDs emitting in the green wavelength range.

Simulation and fabrication of tungsten oxide thin films for electrochromic applications

Electrochromics is the emerging technology that is used in sunlight control window glazing for buildings, automobiles and it can also control indoor climate through smart windows. Electrochromism is the mutable change in optical properties of an electrochromic material caused by redox reactions due to the application of voltage. Easy intercalating the H + ions on a dense electrochromic material (WO3) is the most important parameter as far as the reaction kinetics is concerned. The goal of our work is to improve the electrochemical response of electrochromic material by constructing nano-pillars rather than using dense electrochromic materials. Electrochemical performance of both the dense (planar) and porus (nano pillars) structures were simulated and experimentally proved with a systematic discussion in the present work. It is proven and shown here the increase in the electrochemical kinetics through easy diffusion of ions into the nanostructured electrochromic material.

Highly Efficient Large-Area Flexible Perovskite Solar Cells Containing Tin Oxide Vertical Nanopillars without Oxygen Vacancies

Fabrication of high-quality electron transporting layers (ETLs) on large-area flexible electrodes is necessarily required, but challenging, to improve photovoltaic performance of flexible perovskite solar cells (PSCs) that are demanded for wearable electronic devices. This work shows one-step, oxygen-assisted glancing angle deposition to facilely deposit polycrystalline SnO2 nanopillars (NPs) that are free of oxygen deficiencies and vertically protrude on large-area transparent electrodes. Functioning as ETLs, SnO2 NPs comprehensively lead to an enhancement of light harvesting in perovskites, exciton separation, electron extraction and collection, and hole blocking, as well as the prevention of perovskite decomposition and the formation of perovskite defects. Large-area (1 cm2) flexible PSCs containing the SnO2 NPs show the champion power conversion efficiency (PCE) of 14.9%, which undergoes only 10% degradation for approximately 800 h storage and 20% degradation by manual bending for around 400 times. These photovoltaic performances are remarkably superior to large-area flexible PSCs having the conventionally used spin-coated SnO2 thin films that contain oxygen vacancies. These results pave the way toward scale-up fabrication of flexible PSCs that simultaneously satisfy the commercial requirements of high photovoltaic efficiency, shelf stability, and mechanical stability.

Sputter deposited tungsten oxide thin films and nanopillars: Electrochromic perspective

Tungsten oxide (WO3) thin films and nano pillars were grown on FTO and corning substrates by using DC magnetron sputtering. Structural properties, surface morphology, optical properties, and electrochromic properties were systematically characterized by using SEM, XRD, UV–Vis Spectrometer, and Electrochemical Analyser respectively. Increased oxygen partial pressure resulted a rise in the optical transmittance from 72% to 89% at a wavelength of 600 nm. Moreover, coloration efficiency was also found to vary with partial pressures for both planar and glad from 30.48 cm2C-1 to 78.36 cm2C-1. We observe that glad deposited nano pillars showing higher coloration efficiency as compared to the planar thin film. The coloration efficiency found for the planar thin film and nano pillars at optimized partial pressure are 37.04 cm2C-1 and 78.36 cm2C-1 respectively. A strong influence of oxygen partial pressure and surface to volume ratio has been observed on the coloration efficiency, which can play a major role in the electrochromic application.